전 자 회 로 1 실 험 보 고 서 (Preliminary report)

experiment
Major Student ID Grade Group Name date Due date
융합전자공학부 2016024666 8 하피주딘 14/5/2018 14/5/2018

Title Bipolar Junction Transistor(BJT)

1. Theor y

BJT is a type of transistor. It is a three-terminal device constructed of doped semiconductor material and may be used

in amplifying or switching applications. Bipolar transistors are so named because their operation involves both

electrons and holes, as opposed to unipolar transistors, such as field-effect transistors, in which only one carrier type

is involved in charge flow.

A junction transistor consists of a silicon crystal in which n type of semiconductor is sandwiched between two p type

semiconductor, is called p-n-p transistor. Alternatively, transistor in which p type semiconductor is sandwiched in

between n type semiconductor is called n-p-n type bipolar junction transistor. Three portions of transistors are known

as emitter(E), collector(C) and base(B).

Small changes in the voltage applied across the base–emitter terminals cause the current that flows between the

emitter and the collector to change significantly. This effect can be used to amplify the input voltage or current. BJTs

can be thought of as voltage-controlled current sources

Operation in Active Mode

• Two important points:

o Current flow from emitter can be showed as current tied to two terminals

o Current is controlled by the voltage different between base and emitter, VBE

• Early Assumption

o When VBE < VCE , the base-emitter is forward biased and the base-collector junction is reverse biased.

o With above condition is true, we say that device is in the “forward active region”

• Current Flow

o D1 has current flow but D2 doesn’t, hence this implies that device can’t operate as a voltage-controlled

current source

o
• Improvising the early assumption

o By keeping in mind that the base region is very thin

o In the forward-biased BE junction, the electron flows from the base to the emitter and holes is injected

from the base to the emitter. Current in emitter is larger than base, hence doping concentration in emitter

is higher than base

• Electron enter base region

o Base region is thin, most of the electron reach the BC depletion region and experience the built-in electric

field

o The electrons are swept into the collector region and absorbed by the power source positive terminal

o Reverse-biased CB junction carries a current because minority carrier are “injected” into its depletion

region

• Collector current

o High concentration of electron at x1, and zero concentration of

electron at x2

o △n(x1):

o Flow of electrons into collector, JN:

o IC:

• Base and Emitter Current

o Base current supply holes for both reverse injection into emitter and recombination with the electron

traveling toward the collector

o IB can be viewed as a constant fraction of IC

 o Emitter current can be obtained by KCL

o Summarize everything

2. Experiment

1. Set up the circuit like the figure shown in the above picture.

2. In Fig. 4-1, fix V CC at 12V and change V sig from 0 to 12V with 1V steps. Measure V BE , I C and I B and record

them in Table 4-1. To determine the operating region, record V CE , V CB as well.

3. Plot the IC – VBE graph.

4. Base on Table 4-1, determine the current gain α and β in the forward active region and the saturation region,

and record them in Table 4-2. Compare with the device datasheet

5. Fix V sig at 6V and change V CC from 0 to 12V with 1V steps. Measure V CE , I C and I B , and record them in

Table 4-3. To determine the operating region, record V BE , V CB as well.

6. Plot the Voltage – Time graph.

Multisim Simulation
3. Prediction of result

(1)

Table 10-1

VSIG VBE IB IC VCB VCE Operation Region

0V 0V 0A 0A 12V 12V Saturation Region

0.5V 0.5V 141.16nA 6.91uA 11.50V 11.993V Saturation Region

1V 1V 32.68uA 5.65mA 10.76V 11.43V Saturation Region

1.5V 1.5V 79.81uA 16.1mA 9.69V 10.39V Saturation Region

2V 2V 128.23uA 27.2mA 8.56V 9.28V Saturation Region

2.5V 2.5V 177.17uA 38.26mA 7.45V 8.17V Saturation Region

3V 3V 226.33uA 48.99mA 6.36V 7.10V Saturation Region

3.5V 3.5V 275.65uA 59.31mA 5.32V 6.06V Saturation Region

4V 4V 325.25uA 69.22mA 4.33V 5.08V Saturation Region

4.5V 4.5V 374.69uA 78.67mA 3.38V 4.13V Forward-Active Region

5V 5V 424.21uA 87.72mA 2.47V 3.30V Forward-Active Region

5.5V 5.5V 473.78uA 96.40mA 1.60V 2.36V Forward-Active Region

6V 6V 523.41uA 104.72mA 0.762V 1.53V Forward-Active Region

(2)
 (3)

Operation Region IB IC IE B a

Forward-Active 374.58uA 78.65mA 79.025mA 209.97 995.26m

Forward-Active 411.75uA 85.48mA 85.89mA 207.60 995.21m

Forward-Active 448.935uA 92.094mA 92.54mA 205.14 995.15m

Forward-Active 486.15uA 98.50mA 98.99mA 202.62 995.09m

Forward-Active 523.38uA 104.71uA 105.24uA 200.07 995.03m

(4)

VSIG VBE IB IC VCB VCE Operation Region

0V 6V 536.63uA -141.53uA -619.56mV -619.56mV Forward-Active Region

1V 6V 530.32uA 9.15mA -611.90mV 0.388V Forward-Active Region

2V 6V 528.47uA 18.90mA -604.24mV 1.396V Forward-Active Region

3V 6V 527.33uA 28.70mA -596.31mV 2.404V Forward-Active Region

4V 6V 526.48uA 38.53mA -587.97mV 3.412V Forward-Active Region

5V 6V 525.80uA 48.37mA -579.05mV 4.421V Forward-Active Region

6V 6V 525.24uA 58.22mA -569.30mV 5.431V Forward-Active Region

7V 6V 524.75uA 68.06mA -558.30mV 6.442V Forward-Active Region

8V 6V 524.32uA 77.88mA -545.22mV 7.455V Forward-Active Region

9V 6V 523.93uA 87.67mA -529.03mV 8.471V Forward-Active Region

10V 6V 523.58uA 97.34mA -498.53mV 9.501V Forward-Active Region

11V 6V 523.38uA 103.69mA -134.97mV 10.865V Forward-Active Region

12v 6V 523.38uA 104.71mA 762.31mV 12.762V Saturation Region