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AO3400

30V N-Channel MOSFET

General Description Product Summary

The AO3400 combines advanced trench MOSFET VDS 30V


technology with a low resistance package to provide ID (at VGS=10V) 5.8A
extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) < 28mΩ
load switch or in PWM applications.
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ

SOT23
Top View Bottom View D

D
D

G G
S
S
G S

Absolute Maximum Ratings TA=25°C unless otherwise noted


Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 5.8
ID
Current TA=70°C 4.9 A
C
Pulsed Drain Current IDM 30
TA=25°C 1.4
PD W
Power Dissipation B TA=70°C 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 100 125 °C/W
Maximum Junction-to-Lead Steady-State RθJL 63 80 °C/W

Rev 8: Dec 2011 www.aosmd.com Page 1 of 5


AO3400

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units


STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.65 1.05 1.45 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 30 A
VGS=10V, ID=5.8A 18 28
mΩ
TJ=125°C 28 39
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=5A 19 33 mΩ
VGS=2.5V, ID=4A 24 52 mΩ
gFS Forward Transconductance VDS=5V, ID=5.8A 33 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 630 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 75 pF
Crss Reverse Transfer Capacitance 50 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.5 3 4.5 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 6 7 nC
Qgs Gate Source Charge VGS=4.5V, VDS=15V, ID=5.8A 1.3 nC
Qgd Gate Drain Charge 1.8 nC
tD(on) Turn-On DelayTime 3 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.6Ω, 2.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 25 ns
tf Turn-Off Fall Time 4 ns
trr Body Diode Reverse Recovery Time IF=5.8A, dI/dt=100A/µs 8.5 ns
Qrr Body Diode Reverse Recovery Charge IF=5.8A, dI/dt=100A/µs 2.6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 8: Dec 2011 www.aosmd.com Page 2 of 5


AO3400

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 15
10V 3V
35 VDS=5V
4.5V 12
30

25 2.5V 9
ID (A)

ID(A)
20

15 6

125°C 25°C
10
VGS=2V 3
5

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

30 1.8
VGS=4.5V
Normalized On-Resistance
Id=5A
1.6
25
VGS=4.5V
Ω)
RDS(ON) (mΩ

1.4
17
20
VGS=10V5
1.2 Id=5.8A2

15
10
VGS=10V
1

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

50 1.0E+01
ID=5.8A
1.0E+00
40 40
1.0E-01
Ω)
RDS(ON) (mΩ

125°C
IS (A)

125°C
30 1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C

10 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 8: Dec 2011 www.aosmd.com Page 3 of 5


AO3400

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1000
VDS=15V
ID=5.8A
4 800
Ciss

Capacitance (pF)
VGS (Volts)

3 600

2 400
Coss

1 200

Crss
0 0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 1000
TA=25°C

10.0 10µs
RDS(ON) 100
Power (W)

limited 100µs
ID (Amps)

1.0 1ms

10ms 10

0.1 TJ(Max)=150°C
TA=25°C 10s
DC
1
0.0
0.00001 0.001 0.1 10 1000
0.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse


Thermal Resistance

1 RθJA=125°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 8: Dec 2011 www.aosmd.com Page 4 of 5


AO3400

Gate Charge Test Circuit & Waveform


Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge

R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s


RL
V ds
Vds

90 %
DUT
+ Vdd
Vgs VDC

Rg - 1 0%

Vgs V gs t d (o n ) tr t d (o ff) tf

to n t o ff

D iode R ecovery T est C ircuit & W aveform s

V ds + Q rr = - Idt
DUT
V gs

t rr
V ds - L Isd IF
Isd dI/dt
+ V dd
I RM
V gs VD C
V dd
Ig
- V ds

Rev 8: Dec 2011 www.aosmd.com Page 5 of 5