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Philips Semiconductors Product Specification

PowerMOS transistor BUK455-200A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic envelope. BUK455 -200A -200B
The device is intended for use in VDS Drain-source voltage 200 200 V
Switched Mode Power Supplies ID Drain current (DC) 14 13 A
(SMPS), motor control, welding, Ptot Total power dissipation 125 125 W
DC/DC and AC/DC converters, and Tj Junction temperature 175 175 ˚C
in automotive and general purpose RDS(ON) Drain-source on-state 0.23 0.28 Ω
switching applications. resistance;

PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION d
tab

1 gate
2 drain
g
3 source
tab drain
1 23 s

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 200 V
VDGR Drain-gate voltage RGS = 20 kΩ - 200 V
±VGS Gate-source voltage - - 30 V
-200A -200B
ID Drain current (DC) Tmb = 25 ˚C - 14 13 A
ID Drain current (DC) Tmb = 100 ˚C - 10 9 A
IDM Drain current (pulse peak value) Tmb = 25 ˚C - 56 52 A
Ptot Total power dissipation Tmb = 25 ˚C - 125 W
Tstg Storage temperature - - 55 175 ˚C
Tj Junction Temperature - - 175 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to - - 1.2 K/W
mounting base
Rth j-a Thermal resistance junction to - 60 - K/W
ambient

August 1996 1 Rev 1.100

14 A current IDRM Pulsed reverse drain current . VGS = 0 V .23 Ω resistance ID = 7 A BUK455-200B . VDS = 0 V . Tj =125 ˚C . 1. .5 . VDS = 25 V. ID = 1 mA 2. 35 50 ns Ld Internal drain inductance Measured from contact screw on . 1.25 mA 200 . 100 mJ unclamped inductive turn-off VGS = 10 V . f = 1 MHz . 1400 1750 pF Coss Output capacitance . VDD ≤ 100 V .0 4. RGS = 50 Ω. 4.4 .0 8. nH from package to centre of die Ls Internal source inductance Measured from source lead 6 mm . 0. S Ciss Input capacitance VGS = 0 V. ID = 0. BUK455-200A . V voltage VGS(TO) Gate threshold voltage VDS = VGS. 7. nH from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN.22 0. . . 190 250 pF Crss Feedback capacitance . 56 A VSD Diode forward voltage IF = 14 A . . VGS = 0 V.8 . nH tab to centre of die Ld Internal drain inductance Measured from drain lead 6 mm . UNIT gfs Forward transconductance VDS = 25 V. ID = 3 A. UNIT IDR Continuous reverse drain .0 mA IGSS Gate source leakage current VGS = ±30 V.1 3. RGS = 50 Ω energy August 1996 2 Rev 1. 3. 0.1 1. TYP. 18 30 ns tr Turn-on rise time VGS = 30 V. TYP. UNIT WDSS Drain-source non-repetitive ID = 14 A . MAX. 180 .5 .0 1. µC AVALANCHE LIMITING VALUE Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. . TYP.28 Ω DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. -dIF/dt = 100 A/µs. Tj = 25 ˚C . MAX. . VR = 30 V . TYP. 85 120 ns tf Turn-off fall time .Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. MAX.5 V trr Reverse recovery time IF = 14 A. UNIT V(BR)DSS Drain-source breakdown VGS = 0 V. VGS = 0 V. 1 10 µA IDSS Zero gate voltage drain current VDS = 200 V. ID = 7 A 6. MAX. .100 .2 0.5 . . 35 60 ns td off Turn-off delay time Rgen = 50 Ω . . 10 100 nA RDS(ON) Drain-source on-state VGS = 10 V. .0 V IDSS Zero gate voltage drain current VDS = 200 V. 0. ns Qrr Reverse recovery charge VGS = 0 V. 55 80 pF td on Turn-on delay time VDD = 30 V.

Tj = 25 ˚C.4 1 100 ms 10 0.8 O S( RD 6 10 100 us 0. Fig.5.5 70 0. Tj = 25 ˚C.1 0.2 60 0. Transient thermal impedance.2 VGS / V = 20 0. Typical output characteristics. Normalised continuous drain current. IDM single pulse.001 0 20 40 60 80 100 120 140 160 180 1E-07 1E-05 1E-03 1E-01 1E+01 Tmb / C t/s Fig.05 50 0. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) Zth j-mb = f(t). parameter tp RDS(ON) = f(ID). parameter VGS ID / A BUK455-200A.1.2.100 . parameter VGS August 1996 3 Rev 1.3. Fig. conditions: VGS ≥ 10 V ID = f(VDS).5 5.6 1 ms 8 DC 10 ms 0. Tmb = 25 ˚C Fig. Safe operating area.B RDS(ON) / Ohm BUK455-200A 100 1. parameter D = tp/T ID% Normalised Current Derating ID / A BUK455-200A 120 30 VGS / V = 20 110 10 6 100 8 90 7 80 20 70 60 50 5 40 10 30 20 10 4 0 0 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 12 14 16 18 20 Tmb / C VDS / V Fig.0 ID A S/ VD B 5 = 4 4.02 40 30 0. Normalised power dissipation. ID% = 100⋅ID/ID 25 ˚C = f(Tmb).5 N) tp = 10 us 0.01 PD tp tp 0 D= T 20 10 t T 0 0.1 0 1 10 100 1000 0 4 8 12 16 20 24 28 VDS / V ID / A Fig. ID & IDM = f(VDS).4.6.Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B PD% Normalised Power Derating Zth j-mb / (K/W) BUKx55-lv 120 10 110 100 D= 90 1 80 0. Typical on-state resistance.1 0.

ID = f(VGS) . conditions: VGS = 0 V. f = 1 MHz August 1996 4 Rev 1. Fig. gfs = f(ID). Fig.100 .6 Crss 0. ID = 7 A.2 2.4 2. Typical capacitances. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj). Fig.8. Sub-threshold drain current. conditions: VDS = 25 V. 4 24 typ. 2 12 Tj / C = 150 25 8 1 4 0 0 0 2 4 6 8 10 -60 -20 20 60 100 140 180 VGS / V Tj / C Fig. Crss.2 0 10 -60 -20 20 60 100 140 180 0 20 40 Tj / C VDS / V Fig. VDS = VGS a Normalised RDS(ON) = f(Tj) C / pF BUK4y5-200 2. parameter Tj VGS(TO) = f(Tj).8 0. conditions: Tj = 25 ˚C.4 0. Typical transconductance.Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B ID / A BUK455-200A VGS(TO) / V 28 max. VGS = 10 V C = f(VDS). VDS = VGS gfs / S BUK455-200A ID / A SUB-THRESHOLD CONDUCTION 1E-01 15 1E-02 10 2% typ 98 % 1E-03 1E-04 5 1E-05 0 1E-06 0 4 8 12 16 20 24 28 0 1 2 3 4 ID / A VGS / V Fig. Normalised drain-source on-state resistance.9. conditions: VDS = 25 V ID = f(VGS). conditions: ID = 1 mA.4 1.0 Coss 100 0.6 2.7.0 Ciss 1.6 1.2 1.12. Typical transfer characteristics. Gate threshold voltage.8 1000 1.11. 20 3 16 min.8 10000 2. Tj = 25 ˚C. Ciss.10. Coss.

15.Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B BUK455-200 WDSS% VGS / V 120 12 110 10 100 VDS / V =40 90 8 80 70 160 6 60 50 4 40 30 20 1 10 0 0 0 10 20 30 20 40 60 80 100 120 140 160 180 QG / nC Tmb / C Fig. IF = f(VSDS).5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD ) August 1996 5 Rev 1. parameter VDS WDSS% = f(Tmb).14.13.100 . conditions: ID = 14 A IF / A BUK455-200A 30 VDD + L 20 VDS Tj / C = 150 25 VGS - -ID/100 0 T. conditions: ID = 14 A. Avalanche energy test circuit. conditions: VGS = 0 V. Fig.T.U. VGS = f(QG). 10 R 01 RGS shunt 0 0 1 2 VSDS / V Fig. Fig. parameter Tj WDSS = 0. Typical turn-on gate-charge characteristics. Typical reverse diode current. Normalised avalanche energy rating.16.

Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B MECHANICAL DATA Dimensions in mm 4. 3.7 2. August 1996 6 Rev 1.5 min 1. Refer to mounting instructions for TO220 envelopes.0 not tinned 13.3 max 1.100 .54 2. 2.9 max (3x) 0.8 5.9 min 15.54 2.3 max 1 2 3 (2x) 0.3 3. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide.5 Net Mass: 2 g max 10. Notes 1.8 max 3. Epoxy meets UL94 V0 at 1/8". pin 2 connected to mounting base.0 max 3.4 Fig.17. TO220AB.6 2.

100 . The information presented in this document does not form part of any quotation or contract. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Stress above one or more of the limiting values may cause permanent damage to the device.V. devices or systems where malfunction of these products can be reasonably expected to result in personal injury.  Philips Electronics N. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances. it is advisory and does not form part of the specification. 1996 All rights are reserved. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. supplementary data may be published later. Product specification This data sheet contains final product specifications. August 1996 7 Rev 1. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use.Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data.

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