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CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output 8 35 21 E Marking area

CNY70

Vishay Semiconductors

Reflective Optical Sensor with Transistor Output

8 35
8 35

21

E

Marking area D
Marking area
D

Top v ie w

1915 8 _1

DESCRIPTION

The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light.

FEATURES

• Package type: leaded

• Detector type: phototransistor

• Dimensions (L x W x H in mm): 7 x 7 x 6

• Peak operating distance: < 0.5 mm

• Operating range within > 20 % relative collector current: 0 mm to 5 mm

• Typical output current under test: I C = 1 mA

• Emitter wavelength: 950 nm

• Daylight blocking filter

• Lead (Pb)-free soldering released

• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • Optoelectronic scanning and switching

APPLICATIONS

• Optoelectronic scanning and switching devices i.e., index sensing, coded disk scanning etc. (optoelectronic encoder assemblies).

PRODUCT SUMMARY

 

DISTANCE FOR

DISTANCE RANGE FOR

TYPICAL OUTPUT CURRENT UNDER TEST (2)

DAYLIGHT

PART NUMBER

MAXIMUM CTR rel (1)

RELATIVE I out > 20 %

BLOCKING FILTER

(mm)

 

(mm)

(mA)

INTEGRATED

CNY70

0

 

0 to 5

1

Yes

Notes (1) CTR: current transfere ratio, I out /I in (2) Conditions like in table basic charactristics/sensors

 

ORDERING INFORMATION

 

ORDERING CODE

PACKAGING

VOLUME (1)

 

REMARKS

CNY70

Tube

MOQ: 4000 pcs, 80 pcs/tube

 

-

Note (1) MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (1)

 

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

COUPLER

Total power dissipation

T amb 25 °C

P

tot

200

mW

Ambient temperature range

 

T

amb

- 40 to + 85

°C

Storage temperature range

 

T

stg

- 40 to + 100

°C

Soldering temperature

Distance to case 2 mm, t 5 s

T

sd

260

°C

INPUT (EMITTER)

Reverse voltage

   

V

R

5

V

Forward current

   

I

F

50

mA

Forward surge current

t p 10 µs

I

FSM

3

A

Power dissipation

T amb 25 °C

 

P

V

100

mW

Junction temperature

   

T

j

100

°C

Document Number: 83751

For technical questions, contact: sensorstechsupport@vishay.com

www.vishay.com

Rev. 1.7, 17-Aug-09

1

CNY70

Vishay Semiconductors

Reflective Optical Sensor with Transistor Output

t o r s Reflective Optical Sensor with Transistor Output ABSOLUTE MAXIMUM RATINGS ( 1 )

ABSOLUTE MAXIMUM RATINGS (1)

 

PARAMETER

     

TEST CONDITION

 

SYMBOL

VALUE

 

UNIT

OUTPUT (DETECTOR)

 

Collector emitter voltage

     

V

CEO

 

32

 

V

Emitter collector voltage

     

V

ECO

 

7

 

V

Collector current

       

I

C

 

50

 

mA

Power dissipation

     

T amb 25 °C

 

P

V

 

100

 

mW

Junction temperature

       

T

j

100

 

°C

Note (1) T amb = 25 °C, unless otherwise specified

 

ABSOLUTE MAXIMUM RATINGS

 
 

300

P - Po wer Dissipation (m W )

200

Co u pled de vice Phototransistor IR - diode
Co u pled
de vice
Phototransistor
IR - diode
 

100

0

 

0

25

50

 

75

100

 

95 11071

T am b - Am b ient Temperat ure (°C)

Fig. 1 - Power Dissipation vs. Ambient Temperature

 

BASIC CHARACTERISTICS (1)

 

PARAMETER

     

TEST CONDITION

SYMBOL

 

MIN.

TYP.

MAX.

UNIT

COUPLER

 

Collector current

   

V CE = 5 V, I F = 20 mA,

I C (2)

 

0.3

1.0

mA

   

d

= 0.3 mm (figure 1)

Cross talk current

   

V CE = 5 V, I F = 20 mA, (figure 2)

I CX (3)

     

600

nA

Collector emitter saturation voltage

 

I F = 20 mA, I C = 0.1 mA,

V CEsat (2)

     

0.3

V

 

d

= 0.3 mm (figure 1)

 

INPUT (EMITTER)

 

Forward voltage

     

I F = 50 mA

 

V

F

 

1.25

1.6

V

Radiant intensity

     

I F = 50 mA, t p = 20 ms

 

I

e

     

7.5

mW/sr

Peak wavelength

     

I F = 100 mA

 

λ

P

940

 

nm

Virtual source diameter

   

Method: 63 % encircled energy

 

d

   

1.2

mm

OUTPUT (DETECTOR)

 

Collector emitter voltage

   

I C = 1 mA

V

CEO

 

32

 

V

Emitter collector voltage

   

I E = 100 µA

V

ECO

 

5

 

V

Collector dark current

   

V CE = 20 V, I F = 0 A, E = 0 lx

I CEO

     

200

nA

Notes (1) T amb = 25 °C, unless otherwise specified (2) Measured with the "Kodak neutral test card", white side with 90 % diffuse reflectance (3) Measured without reflecting medium

www.vishay.com

For technical questions, contact: sensorstechsupport@vishay.com

Document Number: 83751

2

Rev. 1.7, 17-Aug-09

CNY70 Reflective Optical Sensor with Transistor Output Vishay Semiconductors Reflecting mediu m (Kodak ne u

CNY70

Reflective Optical Sensor with Transistor Output

Vishay Semiconductors

Reflecting mediu m (Kodak ne u tral test card) ~ d ~ Detector ~ Emitter
Reflecting mediu m
(Kodak ne u tral test card)
~
d ~
Detector
~
Emitter
A
CC
E
~ ~ ~

95 10808

Fig. 2 - Pulse diagram

BASIC CHARACTERISTICS

T amb = 25 °C, unless otherwise specified

1000 100 10 1 0.1 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6
1000
100
10
1
0.1
0 0.2
0.4
0.6
0. 8 1.0
1.2 1.4
1.6 1. 8 2.0
96 11 862
V F - Forw ard V oltage (V )
I F - Forward C urrent (mA)

Fig. 3 - Forward Current vs. Forward Voltage

10 Kodak ne u tral card ( w hite side) d = 0.3 mm 1
10
Kodak
ne u tral card
(
w
hite side)
d = 0.3 mm
1
V CE = 5 V
0.1
0.01
0.001
0.1 1
10
100
I C - Collector C urrent (mA)

95 11065

I F - For w ard C urrent (mA)

Fig. 5 - Collector Current vs. Forward Current

1.5 1.4 V = 5 V CE 1.3 I = 20 mA F 1.2 d
1.5
1.4
V
= 5
V
CE
1.3
I
= 20 mA
F
1.2
d = 0.3 mm
1.1
1.0
0.9
0.
8
0.7
0.6
0.5
- 30 - 20 -10
0
10
20 30
40
50
60
70
8 0
CTR rel - Relati v e C u rrent Transfer Ratio

96 11913

T am b - Am b ient Temperat ure (°C)

Fig. 4 - Relative Current Transfer Ratio vs. Ambient Temperature

10 Kodak ne u tral card I F = 50 mA ( w hite side)
10
Kodak ne u tral card
I
F = 50 mA
(
w hite side)
d = 0.3
mm
1
20
mA
10
mA
0.1
5
mA
2
mA
0.01
1
mA
0.001
0.1 1
10
100
I C - Collector Cu rrent (mA)

95 11066

V CE - Collector Emitter V oltage ( V)

Fig. 6 - Collector Current vs. Collector Emitter Voltage

Document Number: 83751

For technical questions, contact: sensorstechsupport@vishay.com

www.vishay.com

Rev. 1.7, 17-Aug-09

3

CNY70

Vishay Semiconductors

Reflective Optical Sensor with Transistor Output

t o r s Reflective Optical Sensor with Transistor Output 100 Kodak ne u tral card
100 Kodak ne u tral card ( w hite side) d = 0.3 mm V
100
Kodak ne u tral card
( w hite side)
d = 0.3 mm
V CE = 5 V
10
1
0.1
0.1 1
10
100
CTR - C u rrent Transfer Ratio ( % )

96 11914

I F - For ward Cu rrent (mA)

Fig. 7 - Current Transfer Ratio vs. Forward Current

10 I F = 50 mA 1 mA 20 mA 1 10 mA 5 mA
10
I F = 50 mA
1 mA
20 mA
1
10 mA
5 mA
2 mA
Kodak ne u tral card
(
white side)
d
= 0.3
mm
0.1
0.1
1
10
100
CTR - C u rrent Transfer Ratio ( % )

96

12001

V CE - Collector Emitter Voltage (V)

Fig. 8 - Current Transfer Ratio vs. Collector Emitter Voltage

10 1 d 0.1 V CE = 5 V I F = 20 mA 0.001
10
1
d
0.1
V CE = 5 V
I F = 20 mA
0.001
0 2
4
6
8
10
95 11069
d - Distance (mm)
C - Collector C urrent (mA)I

Fig. 9 - Collector Current vs. Distance

0° 10° 20° 30° 40° 1.0 0.9 50° 0. 8 60° 70° 0.7 8 0°
10°
20°
30°
40°
1.0
0.9
50°
0.
8
60°
70°
0.7
8 0°
0.6 0.4
0.2
0
0.2
0.4
0.6
I erel - Relativ e Radiant Intensity
I crel - Relativ e Collector Cu rrent

95 11063

Fig. 10 - Relative Radiant Intensity/Collector Current vs. Angular Displacement

1.0 0.9 0 1.5 s 0. 8 ED 5 mm d = 5 mm 0.7
1.0
0.9
0
1.5
s
0.
8
ED
5
mm
d
=
5
mm
0.7
4
mm
10
mm
0.6
3
mm
d
2
mm
0.5
0
1
mm
E
s
0.4
0
5
mm
0.3
D
10
mm
5 V
V CE =
0.2
I F = 20 mA
0.1
0.0
0 1
2
3
4
5
6
7
8
9
10
11
96 11915
s - Displacement (mm)
I Crel - Relati v e Collector C u rrent

Fig. 11 - Relative Collector Current vs. Displacement

www.vishay.com

For technical questions, contact: sensorstechsupport@vishay.com

Document Number: 83751

4

Rev. 1.7, 17-Aug-09

CNY70 Reflective Optical Sensor with Transistor Output Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 95 11345

CNY70

Reflective Optical Sensor with Transistor Output

Vishay Semiconductors

PACKAGE DIMENSIONS in millimeters

95 11345
95 11345

TUBE DIMENSIONS in millimeters

in millimeters 95 11345 TUBE DIMENSIONS in millimeters 20291 Document Number: 83751 For technical questions,
in millimeters 95 11345 TUBE DIMENSIONS in millimeters 20291 Document Number: 83751 For technical questions,

20291

Document Number: 83751

For technical questions, contact: sensorstechsupport@vishay.com

www.vishay.com

Rev. 1.7, 17-Aug-09

5

Legal Disclaimer Notice Disclaimer Vishay All product specifications and data are subject to change without

Legal Disclaimer Notice

Disclaimer

Vishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.