HI-SINCERITY Spec. No.

: MOS200401
Issued Date : 2004.04.01
MICROELECTRONICS CORP. Revised Date : 2005.04.22
Page No. : 1/6

HIRF630 / HIRF630F HIRF630 Series Pin Assignment

Tab
N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Description Pin 2 & Tab: Drain
Pin 3: Source
This power MOSFET is designed for low voltage, high speed power
switching applications such as switching regulators, conveters, solenoid
and relay drivers. 3
2
1

Features 3-Lead Plastic TO-220FP

Package Code: F
• Dynamic dv/dt Rating Pin 1: Gate
• Repetitive Avalanche Rated Pin 2: Drain
• Fast Switching Pin 3: Source
• Ease of Paralleling
• Simple Drive Requirements 3
2
1

Thermal Characteristics HIRF630 Series Symbol

Symbol Parameter Value Units D
Thermal Resistance TO-220AB 1.71
RθJC °C/W
Junction to Case Max. TO-220FP 3.3 G
Thermal Resistance
RθJA 62 °C/W S
Junction to Ambient Max.

Absolute Maximum Ratings

Symbol Parameter Value Units
VDSS Drain-Source Voltage 200 V
ID Drain to Current (Continuous) 9 A
IDM Drain to Current (Pulsed) (*1) 36 A
VGS Gate-to-Source Voltage (Continue) ±30 V
o
Total Power Dissipation (TC=25 C)
TO-220AB 74 W
TO-220FP 38
PD
Derate above 25°C
TO-220AB 0.58 W/°C
TO-220FP 0.3
EAS Single Pulse Avalanche Energy (*2) 250 mJ
IAR Avalanche Current (*1) 9 A
EAR Repetitive Avalanche Energy (*1) 7.4 mJ
dv/dt Peak Diode Recovery 5 V/ns
Tj Operating Temperature Range -55 to 150 °C
Tstg Storage Temperature Range -55 to 150 °C
Maximum Lead Temperature for Soldering Purposes, 1/8” from
TL 300 °C
case for 10 seconds
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: VDD=50V, starting Tj=25°C, L=4.6mH, RG=25Ω, IAS=9A

HIRF630, HIRF630F HSMC Product Specification

 HI-SINCERITY Spec. No. : MOS200401
Issued Date : 2004.04.01
MICROELECTRONICS CORP. Revised Date : 2005.04.22
Page No. : 2/6

ELectrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol Characteristic Min. Typ. Max. Unit
V(BR)DSS Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) 200 - - V
Drain-Source Leakage Current (VDS=200V, VGS=0V) - - 1 uA
IDSS
Drain-Source Leakage Current (VDS=160V, VGS=0V, Tj=125°C) 50 uA
IGSSF Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V) - - 100 nA
IGSSR Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V) - - -100 nA
VGS(th) Gate Threshold Voltage (VDS=VGS, ID=250uA) 2 - 4 V
RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=5.4A)(*4) - - 0.4 Ω
gFS Forward Transconductance (VDS=50V, ID=5.4A)(*4) 3.8 - - S
Ciss Input Capacitance - 800 -
Coss Output Capacitance VDS=25V, VGS=0V, f=1MHz - 240 - pF
Crss Reverse Transfer Capacitance - 76 -
td(on) Turn-on Delay Time - 9.4 -
tr Rise Time (VDD=100V, ID=5.9A, RG=12Ω, - 28 -
ns
td(off) Turn-off Delay Time RD=16Ω)(*4) - 39 -
tf Fall Time - 20 -
Qg Total Gate Charge - - 43
(VDS=160V, ID=5.9A, VGS=10V)
Qgs Gate-Source Charge - - 7 nC
(*4)
Qgd Gate-Drain Charge - - 23
Internal Drain Inductance (Measured from the drain lead 0.25” from
LD - 4.5 - nH
package to center of die)
Internal Drain Inductance (Measured from the drain lead 0.25” from
LS - 7.5 - nH
package to source bond pad)
*3: ISD≤9A, di/dt≤120A/us, VDD≤V(BR)DSS, TJ≤150°C
*4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%

Source-Drain Diode
Symbol Characteristic Min. Typ. Max. Units
Qrr Reverse Recovery Charge - 1.1 2.2 uC
ton Forward Turn-On Time IF=5.9A, di/dt=100A/us, Tj=25°C (*4) - ** -
trr Reverse Recovery Time - 170 340 ns
VSD Diode Forward Voltage IS=9A, VGS=0V, Tj=25°C (*4) - - 2 V
**: Negligible, Dominated by circuit inductance

HIRF630, HIRF630F HSMC Product Specification

 HI-SINCERITY Spec. No. : MOS200401
Issued Date : 2004.04.01
MICROELECTRONICS CORP. Revised Date : 2005.04.22
Page No. : 3/6

Characteristics Curve

On-Region Characteristic On Resistance Variation with Temperature

14 2.5
ID= 3.5 A
2.3
12 VGS= 10 V
2.1

Normalized Drain-Source ...

8V
Drain-Source Current (A)

10 1.9
VGS=10 7V

On-Resistance
1.7
8
6V
1.5
6
1.3

4 1.1

5V 0.9
2
0.7
4V
0 0.5
0 2 4 6 8 10 25 50 75 100 125 150
Drain-Source Voltage (V) Junction Temperature (ºC)

Drain Current Variation with Gate Voltage & Capacitance Characteristics

Temperature 3000
10

2500

8
Drain-Source Current (A)

2000
Capacitance (pF)

TJ=125°C
6
1500
TJ=25°C
4
1000 Ciss

2
500
Coss
Crss
0 0
0 2 4 6 8 0 10 20 30 40 50
Gate-Source Voltage (V) Drain-Source Voltage (V)

Transconductance Variation with Drain Current Body Diode Forward Voltage Variation with
& Temperature Current & Temperature
7 10
TJ= 25°C
6 TJ= 25°C
gFS,Transconductance (S)...

8
Reverse Drain Current (A)...

5
TJ=125°C
6
4

3
4

2
2
1

0 0
0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 1.2
Drain Current (A) Body Diode Forward Voltage (V)

HIRF630, HIRF630F HSMC Product Specification

 HI-SINCERITY Spec. No. : MOS200401
Issued Date : 2004.04.01
MICROELECTRONICS CORP. Revised Date : 2005.04.22
Page No. : 4/6

Breakdown Voltage Variation with Temperature Maximum Safe Operating Area (TO-220AB)
1.16 100
VGS=10 V
Normalized Drain-Source Breakdown

1.14 Single Pulse

ID=250 uA TC=25°C
1.12

Drain-Source Current (A)

RDS(on) Line 100us
1.10 10

1ms
Voltage

1.08

1.06 10ms

1.04 1 100ms

1.02
DC
1.00

0.98 0
25 50 75 100 125 150 0.1 1 10 100 1000
Junction Temperature (°C) Drain-Source Voltage (V)

Transient Thermal Response Curve Maximum Safe Operating Area(TO-220FP)

100
(TO-220AB)
1.00 VGS=10 V
Single Pulse
0.5
TC=25°C
r(t) Normalized Effective Transien

100us
Drain-Source Current (A)...

RDS(on) Line
Thermal Resistance

0.2 10

1ms
0.1
0.10 RθJC(t)= r(t)*RθJC(t)
0.05 RθJC=1.71OC/W 10ms
P(pk) 1
0.02 t1
100ms
t2
Single Pulse TJ-TC= P* RθJC(t) DC
0.01 Duty Cycle,D= t1/t2

0.01 0
0.01 0.1 1 10 100 1000 0.1 1 10 100 1000
Time (ms) Drain-Source Voltage(V)

Transient Thermal Response Curve

(TO-220FP)
1.00
0.5
r(t) Normalized Effective Transien
Thermal Resistance

0.2

0.1
0.10 RθJC(t)= r(t)*RθJC(t)
RθJC= 3.3OC/W
0.05
P(pk)
t1
0.02
t2

0.01 TJ-TC= P* RθJC(t)

Single Pulse Duty Cycle,D= t1/t2

0.01
0.01 0.1 1 10 100 1000
Time(ms)

HIRF630, HIRF630F HSMC Product Specification

 HI-SINCERITY Spec. No. : MOS200401
Issued Date : 2004.04.01
MICROELECTRONICS CORP. Revised Date : 2005.04.22
Page No. : 5/6

TO-220AB Dimension

Marking: DIM Min. Max.

A 5.58 7.49
A B F B 8.38 8.90
Pb Free Mark
Pb-Free: " . " (Note) C 4.40 4.70
E
Normal: None H I RF D 1.15 1.39
D C
630 E 0.35 0.60
F 2.03 2.92
Date Code Control Code G 9.66 10.28
H H - *16.25
M K I - *3.83
I Note: Green label is used for pb-free packing
3 J 3.00 4.00
N Pin Style: 1.Gate 2 & Tab.Drain 3.Source K 0.75 0.95
G 2 L 2.54 3.42
Material:
1 • Lead solder plating: Sn60/Pb40 (Normal), M 1.14 1.40
Tab Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) N - *2.54
P O • Mold Compound: Epoxy resin family, O 12.70 14.27
flammability solid burning class: UL94V-0
L J P 14.48 15.87
*: Typical, Unit: mm

3-Lead TO-220AB
Plastic Package
HSMC Package Code: E

TO-220FP Dimension

Marking: DIM Min. Max.

A 6.48 7.40
A
C 4.40 4.90
α1 α4 Pb Free Mark
Pb-Free: " . " (Note) D 2.34 3.00
E O Normal: None H I RF E 0.45 0.80
C 630F F 9.80 10.36
D
α2 α3 G 3.10 3.60
α5 I 2.70 3.43
Date Code Control Code
J 0.60 1.00
G I
K 2.34 2.74
J Note: Green label is used for pb-free packing
N L 12.48 13.60
3 Pin Style: 1.Gate 2.Drain 3.Source M 15.67 16.20
Material: N 0.90 1.47
F 2 O 2.00 2.96
• Lead solder plating: Sn60/Pb40 (Normal),
K Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) α1/2/4/5 - *5o
1 • Mold Compound: Epoxy resin family, α3 - *27o
flammability solid burning class: UL94V-0
M L
*: Typical, Unit: mm

3-Lead TO-220FP
Plastic Package
HSMC Package Code: F

Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931

HIRF630, HIRF630F HSMC Product Specification

 HI-SINCERITY Spec. No. : MOS200401
Issued Date : 2004.04.01
MICROELECTRONICS CORP. Revised Date : 2005.04.22
Page No. : 6/6

Soldering Methods for HSMC’s Products

1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%

2. Reflow soldering of surface-mount devices

Figure 1: Temperature profile

tP
TP Critical Zone
TL to TP
Ramp-up

TL
Tsmax tL
Temperature

Tsmin

tS
Preheat
Ramp-down

25
t 25oC to Peak
Time

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

o
Average ramp-up rate (TL to TP) <3 C/sec <3oC/sec
Preheat
- Temperature Min (Tsmin) 100oC 150oC
- Temperature Max (Tsmax) 150oC 200oC
- Time (min to max) (ts) 60~120 sec 60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
Time maintained above:
- Temperature (TL) 183oC 217oC
- Time (tL) 60~150 sec 60~150 sec
o o
Peak Temperature (TP) 240 C +0/-5 C 260oC +0/-5oC
Time within 5oC of actual Peak
10~30 sec 20~40 sec
Temperature (tP)
Ramp-down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes

3. Flow (wave) soldering (solder dipping)

Products Peak temperature Dipping time

Pb devices. 245 C ±5 Co o
5sec ±1sec
Pb-Free devices. o
260 C +0/-5 C o
5sec ±1sec

HIRF630, HIRF630F HSMC Product Specification