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The
performance of ICs is high because the small size allows
In electronics, an integrated short traces which in turn allows low power logic (such as
circuit (also known as IC, CMOS) to be used at fast switching speeds.
microcircuit, microchip, silicon
chip, or chip) is a miniaturized ICs have consistently migrated to smaller feature sizes
electronic circuit (consisting mainly of semiconductor over the years, allowing more circuitry to be packed on
devices, as well as passive components) that has been each chip. This increased capa
capacity
city per unit area can be
manufactured in the surface of a thin substrate of used to decrease cost and/or increase functionality—see
functionality
semiconductor material. Integrated circuits are used in Moore's law which, in its modern interpretation, states
almost all electronic equipment in use today and have that the number of transistors in an integrated circuit
revolutionized the world of electronics. Computers, doubles every two years. In general, as the feature size
cellular phones, and other digital appliances
applianc are now shrinks,
ks, almost everything improves
improves—the the cost per unit
inextricable parts of the structure of modern societies, and the switching power consumption go down, and the
made possible by the low cost of production of integrated speed goes up. However, ICs with nanometer
nanometer-scale
scale devices
circuits. are not without their problems, principal among which is
leakage current (see subthreshold leakag
leakagee for a discussion
A hybrid integrated circuit is a miniaturized electronic of this), although these problems are not insurmountable
circuit constructed of individual semiconductor devices, as and will likely be solved or at least ameliorated by the
welll as passive components, bonded to a substrate or introduction of high
high-k
k dielectrics. Since these speed and
circuit board. A monolithic integrated circuit is made of power consumption gains are apparent to the end user,
devices manufactured by diffusion of trace elements into a there is fi
fierce
erce competition among the manufacturers to
single piece of semiconductor substrate, a chip. use finer geometries. This process, and the expected
progress over the next few years, is well described by the
Introduction
International Technology Roadmap for Semiconductors
Integrated circuits were madeade possible by experimental (ITRS).
discoveries which showed that semiconductor devices
Classification
could perform the functions of vacuum tubes and by mid-mid
20th-century
century technology advancements in semiconductor Integrated circuits can b
be
e classified into analog, digital and
device fabrication. The integration of large numbers of tiny mixed signal (both analog and digital on the same chip).
transistors
istors into a small chip was an enormous
improvement over the manual assembly of circuits using Digital integrated circuits can contain anything from one to
electronic components. The integrated circuit's mass millions of logic gates, flip
flip-flops,
flops, multiplexers, and other
production capability, reliability, and building-block
building circuits in a few square millimeters. TThe
he small size of these
approach to circuit design ensured the rapid adoption
adoptio of circuits allows high speed, low power dissipation, and
standardized ICs in place of designs using discrete reduced manufacturing cost compared with board-level
board
transistors. integration. These digital ICs, typically microprocessors,
DSPs, and micro
There are two main advantages of ICs over discrete controllers work using
circuits: cost and performance. Cost is low because the binary mathematics to
chips, with all their components, are printed as a unit by process
ss "one" and
photolithography and not constructed as one transistor at "zero" signals.
a time. Furthermore, much less material is used to
construct a circuit as a packaged IC die than as a discrete Analog ICs, such as
circuit. Performance is high since the components switch sensors, power
quickly and consume little power (compared to their thei management circuits,
discrete counterparts) because the components are small and operational amplifiers, work by processing continuous
and close together. As of 2006, chip areas range from a few signals. They perform functions like amplification, active
square millimeters to around 350 mm2, with up to 1 filtering, demodulation, mixing, etc. Analog ICs ease the
million transistors per mm2. burden on circuit designers by having expertly designed
analog circuits available instead of designing a difficult
Advances in integrated circuits analog circuit from scratch.
Among the most advanced ICs can also combine analog and digital circuits on a single
integrated circuits are the chip to create functions such as A/D converters and D/A
microprocessors or "cores", converters. Such circuits offer smaller size and lower cost,
which control everything but must carefully account for signal interference.
from computers to cellular
phones to digital
Information derived from
microwave ovens. Digital
memory chips and ASICs
are examples of other families of integrated circuits that
are important to the modern ern information society. While
the cost of designing and developing a complex integrated
circuit is quite high, when spread across typically millions
OPTICAL FIBER vapor deposition,
outside vapor
An optical fiber is a thin, deposition, and vapor
flexible, transparent fiber that axial deposition.
acts as a waveguide, or "light
pipe", to transmit light With inside vapor
between the two ends of the deposition, the preform
fiber. Optical fibers are widely starts as a hollow glass
used in fiber-optic tube approximately 40
communications, which centimeters (16 in)
permits transmission over long, which is placed
longer distances and at higher horizontally and rotated
bandwidths (data rates) than slowly on a lathe. Gases
other forms of communication. such as silicon tetrachloride (SiCl4) or germanium
Fiberss are used instead of metal wires because signals tetrachloride
achloride (GeCl4) are injected with oxygen in the end of
travel along them with less loss and are also immune to the tube. The gases are then heated by means of an
electromagnetic interference. Fibers are also used for external hydrogen burner, bringing the temperature of the
illumination, and are wrapped in bundles so they can be gas up to 1900 K (1600 °C, 3000 °F), where the
used to carry images, thus allowing viewing
vie in tight spaces. tetrachlorides react with oxygen to produce silica or
Specially designed fibers are used for a variety of other germania (germanium dioxide) particles. When the
applications, including sensors and fiber lasers. reaction conditions are chosen to allow this reaction to
occur in the gas phase throughout the tube volume, in
Optical fiber typically consists of a transparent core contrast to earlier techniques where the reaction occurred
surrounded by a transparent cladding material with a only on the glass surface, this technique is called modified
lower index of refraction.
raction. Light is kept in the core by total chemical vapor deposition.
internal reflection. This causes the fiber to act as a
waveguide. Fibers which support many propagation paths The oxide particles then agglomerate to form large particle
or transverse modes are called multi-mode
multi fibers (MMF), chains, which subsequently deposit on the walls of the
while those which can only support a single mode mo are tube as soot. The deposition is due to the large difference
called single-mode
mode fibers (SMF). Multi-mode
Multi fibers in temperature betw
between
een the gas core and the wall causing
generally have a larger core diameter, and are used for the gas to push the particles outwards (this is known as
short-distance
distance communication links and for applications thermophoresis). The torch is then traversed up and down
where high power must be transmitted. Single-mode
Single fibers the length of the tube to deposit the material evenly. After
are used for most communication on links longer than 1,050 the torch has reached the end of the tube, it is then brought
meters (3,440 ft). back to the beginning of the tube and the deposited
particles are then melted to form a solid layer. This
Joining lengths of optical fiber is more complex than process is repeated until a sufficient amount of material
joining electrical wire or cable. The ends of the fibers must has been deposited. For each layer the composition can be
be carefully cleaved, and then spliced together either modified by varvarying
ying the gas composition, resulting in
mechanically or by fusing them together with an electric precise control of the finished fiber's optical properties.
arc. Special connectors are used to make removable
connections. In outside vapor deposition or vapor axial deposition, the
glass is formed by flame hydrolysis, a reaction in which
Manufacturing silicon tetrachloride and germanium tetra tetrachloride
chloride are
oxidized by reaction with water (H2O) in an oxyhydrogen
Glass optical fibers are almost always made from silica, but
flame. In outside vapor deposition the glass is deposited
some other materials, such as fluorozirconate,
onto a solid rod, which is removed before further
fluoroaluminate, and chalcogenide glasses as well as a
processing. In vapor axial deposition, a short seed rod is
crystalline materials like sapphire, are used for longer-
longer
used, and a porous ppreform,
reform, whose length is not limited by
wavelength infrared or other specialized applications.
the size of the source rod, is built up on its end. The porous
Silica and fluoride glasses usually have refractive indices of
preform is consolidated into a transparent, solid preform
about 1.5, but some materials such as the chalcogenides
by heating to about 1800 K (1500 °C, 2800 °F).
can have indices as highh as 3. Typically the index difference
between core and cladding is less than one percent. The preform, however constructed, is then placed in a
device known as a drawing tower, where the preform tip is
Plastic optical fibers (POF) are commonly step-index
step
heated and the optic fiber is pulled out as a string. By
multi-mode
mode fibers with a core diameter of 0.5 millimeters
measuring the resultant fiber width, the tension on the
or larger. POF typically have higher attenuation
fiber can be controlled to maintain the fiber thickness.
coefficients than glass fibers, 1 dB/m or higher, and this
high attenuation limits the range of POF-based
POF systems. Information derived from
The thermal effects of the incident IR radiation can be As photolithography became available in the early 1960's
followed through many temperature dependent it was applied to make IR sensor arrays. Linear array
phenomena. Bolometers and microbolometers are based technology was first demonstrated in PbS, PbSe, and InSb
on changes in resistance. Thermocouples and thermopiles detectors. Photovoltaic (P (PV)
V) detector development began
use the thermoelectric effect. Golay cells follow thermal with the availability of single crystal InSb material.
expansion. In IR spectrometers the pyroelectric detectors
are the most widespread. In the late 1960's and early 1970's, "first generation"
linear arrays of intrinsic MCT photoconductive detectors
The response
ponse time and sensitivity of photonic detectors were developed. These allowed LWIR forward looking
can be much higher, but usually these have to be cooled to imaging radiometer (FLIR) systems to operate at 80K with
cut thermal noise. The materials in these are a single stage cryoengine, making them much more
semiconductors with narrow band gaps. Incident IR compact, lighter, and significantly lower in power
photons can cause electronic excitations. In consumption.
photoconductive
nductive detectors, the resistivity of the detector
element is monitored. Photovoltaic detectors contain a p-n
p The 1970's witnessed a mushrooming of IR applications
junction on which photoelectric current appears upon combined with the start of high volume production of first
illumination. generation sensor systems using linear arrays
A few detector materials and their types are given in the At the same time, other significant detector technology
succeeding table. developments were taking place. Silicon technology
spawned novel platinum silicide (PtSi) detector devices
Spectral which have become standard commercial products for a
Detector Type
range(μm) variety of MWIR high resolution applications.
Indium gallium
photodiode 0.7-2.6
arsenide(InGaAs) The invention of charge coupled devices (CCDs) in the late
Lead sulfide (PbS) photoconductive 1-3.2
1960's made it possible to envision "second generation"
Indium
photovoltaic 1-3.8 detector arrays coupled with on on-focal-plane
plane electronic
arsenide (InAs)
Indium analog signal readouts which could multiplex the signal
photodiode 1-5.5 from a very large array of detectors. Early assessment of
antimonide (InSb)
Lithium this concept showed that photovoltaic detectors such as
pyroelectric
tantalate (LiTaO3) InSb, PtSi, and MCT detectors or high impedance
The range of pyroelectric detector is determined by the window materials used in their
construction. photoconductors such as PbSe, PbS, and extrinsic silicon
sil
detectors were promising candidates because they had
Infrared history impedances suitable for interfacing with the FET input of
readout multiplexers. PC MCT was not suitable due to its
Infrared detectors are in general used to detect, image, and
low impedance. Therefore, in the late 1970's through the
measure patterns of the thermal heat radiation which all
1980's, MCT technology effefforts
orts focused almost exclusively
objects emit. Early devices consisted of single detector
on PV device development because of the need for low
elements that relied on a change in the temperature of the
power and high impedance for interfacing to readout input
detector. Early thermal detectors were thermocouples and
circuits in large arrays. This effort has been paying off in
bolometers which are still used today. Thermal detectors
the 1990's with the birth of second generation IR detectors
de
are generally sensitive to all infrared wavelengths
wavele and
which provide large 2D arrays in both linear formats.
operate at room temperature. Under these conditions, they
These detectors use TDI for scanning systems; in staring
have relatively low sensitivity and slow response.
systems, they come in square and rectangular formats.
Photon detectors were developed to improve sensitivity
Monolithic extrinsic silicon detectors were demonstrated
and response time. These detectors have been extensively
first in the mid 1970's
1970's.. The monolithic extrinsic silicon
developed since the 1940's.s. Lead sulfide (PbS) was the
approach was subsequently set aside because the process
first practical IR detector. It is sensitive to infrared
of integrated circuit fabrication degraded the detector
wavelengths up to ~3 µm.
quality. Monolithic PtSi detectors, however, in which the
Beginning in the late 1940's and continuing into the detector can be formed after the readout is processed,
process are
1950's, a wide variety of new materials were developed for now widely available.
IR sensing. Lead selenide (PbSe),, lead telluride (PbTe), and Information derived from
indium antimonide (InSb) extended the spectral range
beyond that of PbS, providing sensitivity in the 3-5 3 µm
medium wavelength (MWIR) atmospheric window.