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Mg# Topik Sub Topik Capaian Belajar Mahasiswa Sumber Materi

1 Introduction  Introduction :  Understand application of material(s) Reference # :


application of related to their properties in  1
material related main/supporting components,devices,  3
to their circuits (PCB), modules, equipments and
properties in systems of electrical engineering;
electrical  Student understands the origin of the s
engineering; (conductivity) as properties of the material
 Classification which determine current in relation to
based on  apllied voltage (electric field) known as
(conductivity) : resistance.
conductor,  Students become knowledgeable to class of
semiconductor material related to conducting behavior
and insulator. (conductivity) : conductor, insulator
 Initial (dielectric, semiconductor.
'microscopic'  Student will have initial 'microscopic' view
view of electrons of electrons travelling affected by potential
in sea of potential energy of atomic lattice of material as
energy of lattice . unique.
2 Material  Crystal Structure,  Student understands structure of material : Reference # :
Structure parameters : crystal, poly-crystal and amorph ;  1
Lattice constant,  Student understands crystal structure in  2
Unit cell : 14 direct lattice and parameters : bases, lattice  3
Bravais system, constant and unit cell. Students will be
 Miller index knowledgeable of Bravais systems of 14
(reciprocal basic structures.
lattice): crystal  Students becomes knowledgeable in
orientation, indirect (reciprocal) lattice and understand
symmetry, plane use of index Miller to derive crystal plane
distance, angle of orientation, direction and symmetry.
crystal plane  Students understand packing fraction and
intersection; surface densityof various crystal especially
 APF (Atomic of Cubic and hexagonal closed pack system.
packing fraction),
surface density
3 Lattice  Lattice Vibration :  Understands mechanical-physics lattice Reference # :
Vibration collision with (atoms in crystal) vibrating as spring-like -  2
electron; Phonon mechanical wave of atoms;  3
emission :  Know the origin of lattice vibration: energy
Acoustical and and momentum exhange of collision with
Optical phonon, (conducting) electrons.
 (vibration) wave  Comprehend derivation of lattice wave
mechanics 1-D equation and mechanism of absorption and
Monatomic and emission of phonon (heat in material) in
Diatomic either one : acoustical or optical mode.
 Know how to derive simple 1-D monatomic
and diatomic crystal - lattice wave and find
 Longitudinal and solution : lattice vibrating wave as function
transversal of k
vibration wave  Understand the lattice wave relation to
longitudinal and transversal vibration of
atoms.
4 Crystal  Crystal Bonding :  Understands nature of physics of Crystal Reference # :
Bonding cohesive energy, Bonding : cohesive energy in lattice as  2
 Type of bonding : combination of attractive and repulsive  3
Van der Waals, forces of atom nucleus and valence
Ionic bonding, electrons.
Covalent bonding,  Becomes knowledgeable of type of material
Metalic bonding, crystal bonding : Van der Waals, metalic,
Hydrogen bond covalent, ionic and Hydrogen bonding and
material properties.
5 Energy Band  Periodic  Comprehends energy potential (band) of Reference # :
Model potentials of material element and alloy;  1
crystal lattice :  Knowledgeable existence of periodic  2
KronnigPenney potential energy (Kronnig-Penney model)  3
model,  Know origin (simplified) Energy Band Model
 (Simplified  Acquiring practical knowledge of the Energy
Potential) Energy Band Model and the reference (potential)
Band Model : energy levels of the model, from the basic
energyi gap (g), knowledge of the properties of electrical
Ban Konduksi (conductivity and dielectric) of materials as
(C), Ban Valensi conductor, insulators & semiconductor
(V), level enerji conductors to concept of electron and hole
Intrinsic (i); with potential (energy) levels and their
 Concept of potential gradient in Energy Band Model,
(conducting)  Acquire introduction usage of energy band
Electron and model of structure of semiconductor
Hole. devices.
6 Particle  Particle Statistics  Students will have introductory knowledge Reference # :
Statistics in material of class and application of statistics in  3
(classification) : determining particles and other
classical constituents in material and solid state
Boltzmann universe such as electron/hole, phonon,
statistics; photon and others.
Quantum  Students will be acquainted derivation of
Statistics : Bose- Fermi Dirac statistics using Langrangian
Einstein, multiplier.
 Fermi Dirac (FD)  Students will have scientifical-engineering
Statistics : view on 'learning - exponential curve' of
derivation, governing IV characteristics of diode and
Langrangian other other junction devices which is
multiplier explained by statistics of carrier population.
 Fermic Dirac  Student posseses practical knowledge of
Function Boltzmann and Fermi-Dirac statistics as
probability in finding charge/carrier
(electron and hole) in material
(semiconductor).
7 Density of  Density of States  Students understand essence of Density of Reference # :
States (DOS) states (DOS) as (potential energy) level  1
(DOS),  Carrier (electrons clusters for carrier to occupy : electrons in  2
and holes) Conduction band and holes in Valence  3
concentration, band, respectively.
 Fermi level (eF) in  Students will know origin (derivation) DOS
energy band equation and its relation to energy
model ; (potential) in conduction and valence band
of semiconductor material.
 Students know to derive electron (n) and
hole concentration (p) equations thru
integration of Fermi Dirac probability ((as
fuction of Fermi level = doping level) and
density of states as function of energy (of
the carrier) in respective band (conduction
and valence bands).
 Students becomes familiar in calculating
carrier concentration (electron, n and hole,
p) and plot Fermi level (EF) in Energy Band
Model.
8 Carrier  Carrier Scattering  Students understand the scattering process Reference # :
Scattering : Lattice and of electron collision in lattice of material :  1
ionized impurity (1) Coulombic scattering (ionized impurity),  3
scattering; Acoustical and Optical Phonon scattering
 Matthiessen’s  Student can describe mobility ( ) related
rule : dominant to scattering rate () and effective mass of
scattering electron (or hole, m* );
(related to T)  Student can figure out combined effect of
 Mobility () : all scattering mechanisms using
conductivity of Matthiessen’s rule and qualitatively
material, explains dominant effect of either lattice or
scattering rate, impurity scattering according to
effective mass; temperature.
 Mobility relation  Understand drift current as result of
to temperature existence of electric field (E) and mobility -
(T) where electron drift due to electric field
 Mobility relation overcoming random motion of thermal
to electric field drift.
(E)  Qualitatively able to describe (5) drift speed
 Saturation as function electric field (E) and saturation
velocity (vsat) ; velocity (vsat) above the critical field (ECR)
 Drift current ; as result of optical phonon scattering.
9 Carrier  Carrier Diffusion  Student understands diffusion transport of Reference # :
Diffusion Process : carrier (electron,hole) in semiconductor  1
Process concentration due to gradient concentration.  3
gradient; relasi  Student is able to derive diffusion current
Einstein; Diffusion from the gradient concentration and
Current  Understands Einstein relationship of
density;Total diffusion coeffient to electron (hole)
current of Drift mobility.
and Diffusion  Student will have comprehensive
knowledge on total current in
semiconductor due to Drift and Diffusion of
electron and hole.
10 Continuity  Continuity  Student understands essence of Continuity Reference # :
equation, equation, equation which leads to carrier  1
 Generation conservation in semiconductor.  3
process :  Student becomes knowledgeable in carrier
 Recombination : Generation - electron-hole pair generation
SRH as result of thermal excitation or other
Recombination, form energy excitation mechanism such as
Surface photo-excitation (due to photon-
Recombination illumination), pressure (piezoelectric) and
others.
11 P-N Junction  Physics of P-N  Students are able to explain the physical Reference # :
Diode Junction : mechanism of P-N Junction : diffusion of  1
junction diffusion electron and hole accross P-N sides of the  3
process, space- junction, space charge and potential barrier
charge (depletion built-up in depletion region.
region), potential  Students are able to derive current-voltage
barrier built-up. (I-V) characteristics of PN Junction Diode.
 Origin of Diode  Students can explain physics of carriers
currentvoltage(I- crossing junction barrier when the applied
V) Characteristics bias in forward and reverse condition :
 Relation to depletion region width and junction barrier
applied potential increase.
(forward and  Students can sort out the P-N Junction
reverse bias) ; diode current components and
 Diode current differentiate each origin from diode I-V
components characteristics.