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application of related to their properties in 1

material related main/supporting components,devices, 3

to their circuits (PCB), modules, equipments and

properties in systems of electrical engineering;

electrical Student understands the origin of the s

engineering; (conductivity) as properties of the material

Classification which determine current in relation to

based on apllied voltage (electric field) known as

(conductivity) : resistance.

conductor, Students become knowledgeable to class of

semiconductor material related to conducting behavior

and insulator. (conductivity) : conductor, insulator

Initial (dielectric, semiconductor.

'microscopic' Student will have initial 'microscopic' view

view of electrons of electrons travelling affected by potential

in sea of potential energy of atomic lattice of material as

energy of lattice . unique.

2 Material Crystal Structure, Student understands structure of material : Reference # :

Structure parameters : crystal, poly-crystal and amorph ; 1

Lattice constant, Student understands crystal structure in 2

Unit cell : 14 direct lattice and parameters : bases, lattice 3

Bravais system, constant and unit cell. Students will be

Miller index knowledgeable of Bravais systems of 14

(reciprocal basic structures.

lattice): crystal Students becomes knowledgeable in

orientation, indirect (reciprocal) lattice and understand

symmetry, plane use of index Miller to derive crystal plane

distance, angle of orientation, direction and symmetry.

crystal plane Students understand packing fraction and

intersection; surface densityof various crystal especially

APF (Atomic of Cubic and hexagonal closed pack system.

packing fraction),

surface density

3 Lattice Lattice Vibration : Understands mechanical-physics lattice Reference # :

Vibration collision with (atoms in crystal) vibrating as spring-like - 2

electron; Phonon mechanical wave of atoms; 3

emission : Know the origin of lattice vibration: energy

Acoustical and and momentum exhange of collision with

Optical phonon, (conducting) electrons.

(vibration) wave Comprehend derivation of lattice wave

mechanics 1-D equation and mechanism of absorption and

Monatomic and emission of phonon (heat in material) in

Diatomic either one : acoustical or optical mode.

Know how to derive simple 1-D monatomic

and diatomic crystal - lattice wave and find

Longitudinal and solution : lattice vibrating wave as function

transversal of k

vibration wave Understand the lattice wave relation to

longitudinal and transversal vibration of

atoms.

4 Crystal Crystal Bonding : Understands nature of physics of Crystal Reference # :

Bonding cohesive energy, Bonding : cohesive energy in lattice as 2

Type of bonding : combination of attractive and repulsive 3

Van der Waals, forces of atom nucleus and valence

Ionic bonding, electrons.

Covalent bonding, Becomes knowledgeable of type of material

Metalic bonding, crystal bonding : Van der Waals, metalic,

Hydrogen bond covalent, ionic and Hydrogen bonding and

material properties.

5 Energy Band Periodic Comprehends energy potential (band) of Reference # :

Model potentials of material element and alloy; 1

crystal lattice : Knowledgeable existence of periodic 2

KronnigPenney potential energy (Kronnig-Penney model) 3

model, Know origin (simplified) Energy Band Model

(Simplified Acquiring practical knowledge of the Energy

Potential) Energy Band Model and the reference (potential)

Band Model : energy levels of the model, from the basic

energyi gap (g), knowledge of the properties of electrical

Ban Konduksi (conductivity and dielectric) of materials as

(C), Ban Valensi conductor, insulators & semiconductor

(V), level enerji conductors to concept of electron and hole

Intrinsic (i); with potential (energy) levels and their

Concept of potential gradient in Energy Band Model,

(conducting) Acquire introduction usage of energy band

Electron and model of structure of semiconductor

Hole. devices.

6 Particle Particle Statistics Students will have introductory knowledge Reference # :

Statistics in material of class and application of statistics in 3

(classification) : determining particles and other

classical constituents in material and solid state

Boltzmann universe such as electron/hole, phonon,

statistics; photon and others.

Quantum Students will be acquainted derivation of

Statistics : Bose- Fermi Dirac statistics using Langrangian

Einstein, multiplier.

Fermi Dirac (FD) Students will have scientifical-engineering

Statistics : view on 'learning - exponential curve' of

derivation, governing IV characteristics of diode and

Langrangian other other junction devices which is

multiplier explained by statistics of carrier population.

Fermic Dirac Student posseses practical knowledge of

Function Boltzmann and Fermi-Dirac statistics as

probability in finding charge/carrier

(electron and hole) in material

(semiconductor).

7 Density of Density of States Students understand essence of Density of Reference # :

States (DOS) states (DOS) as (potential energy) level 1

(DOS), Carrier (electrons clusters for carrier to occupy : electrons in 2

and holes) Conduction band and holes in Valence 3

concentration, band, respectively.

Fermi level (eF) in Students will know origin (derivation) DOS

energy band equation and its relation to energy

model ; (potential) in conduction and valence band

of semiconductor material.

Students know to derive electron (n) and

hole concentration (p) equations thru

integration of Fermi Dirac probability ((as

fuction of Fermi level = doping level) and

density of states as function of energy (of

the carrier) in respective band (conduction

and valence bands).

Students becomes familiar in calculating

carrier concentration (electron, n and hole,

p) and plot Fermi level (EF) in Energy Band

Model.

8 Carrier Carrier Scattering Students understand the scattering process Reference # :

Scattering : Lattice and of electron collision in lattice of material : 1

ionized impurity (1) Coulombic scattering (ionized impurity), 3

scattering; Acoustical and Optical Phonon scattering

Matthiessen’s Student can describe mobility ( ) related

rule : dominant to scattering rate () and effective mass of

scattering electron (or hole, m* );

(related to T) Student can figure out combined effect of

Mobility () : all scattering mechanisms using

conductivity of Matthiessen’s rule and qualitatively

material, explains dominant effect of either lattice or

scattering rate, impurity scattering according to

effective mass; temperature.

Mobility relation Understand drift current as result of

to temperature existence of electric field (E) and mobility -

(T) where electron drift due to electric field

Mobility relation overcoming random motion of thermal

to electric field drift.

(E) Qualitatively able to describe (5) drift speed

Saturation as function electric field (E) and saturation

velocity (vsat) ; velocity (vsat) above the critical field (ECR)

Drift current ; as result of optical phonon scattering.

9 Carrier Carrier Diffusion Student understands diffusion transport of Reference # :

Diffusion Process : carrier (electron,hole) in semiconductor 1

Process concentration due to gradient concentration. 3

gradient; relasi Student is able to derive diffusion current

Einstein; Diffusion from the gradient concentration and

Current Understands Einstein relationship of

density;Total diffusion coeffient to electron (hole)

current of Drift mobility.

and Diffusion Student will have comprehensive

knowledge on total current in

semiconductor due to Drift and Diffusion of

electron and hole.

10 Continuity Continuity Student understands essence of Continuity Reference # :

equation, equation, equation which leads to carrier 1

Generation conservation in semiconductor. 3

process : Student becomes knowledgeable in carrier

Recombination : Generation - electron-hole pair generation

SRH as result of thermal excitation or other

Recombination, form energy excitation mechanism such as

Surface photo-excitation (due to photon-

Recombination illumination), pressure (piezoelectric) and

others.

11 P-N Junction Physics of P-N Students are able to explain the physical Reference # :

Diode Junction : mechanism of P-N Junction : diffusion of 1

junction diffusion electron and hole accross P-N sides of the 3

process, space- junction, space charge and potential barrier

charge (depletion built-up in depletion region.

region), potential Students are able to derive current-voltage

barrier built-up. (I-V) characteristics of PN Junction Diode.

Origin of Diode Students can explain physics of carriers

currentvoltage(I- crossing junction barrier when the applied

V) Characteristics bias in forward and reverse condition :

Relation to depletion region width and junction barrier

applied potential increase.

(forward and Students can sort out the P-N Junction

reverse bias) ; diode current components and

Diode current differentiate each origin from diode I-V

components characteristics.

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