You are on page 1of 13

SM3317NSQA ®

N-Channel Enhancement Mode MOSFET

Features Pin Description

DD
• 30V/34A, DD

RDS(ON) =11.5mΩ(max.) @ VGS =10V


RDS(ON) =15.5mΩ(max.) @ VGS =4.5V SG
SS
• Avalanche Rated
• Reliable and Rugged DFN3x3-8
• Lead Free and Green Devices Available (5,6,7,8)
(RoHS Compliant) DD DD

Applications (4) G

• Power Management in Notebook Computer,


Portable Equipment and Battery Powered
Systems. S S S
( 1, 2, 3 )

N-Channel MOSFET
Ordering and Marking Information
SM3317NS Package Code
QA : DFN3x3-8
Assembly Material Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Handling Code
Temperature Range TR : Tape & Reel (3000ea/reel)
Package Code Assembly Material
G : Halogen and Lead Free Device
SM
SM3317NS QA : 3317 XXXXX - Lot Code
XXXXX

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  Sinopower Semiconductor, Inc. 1 www.sinopowersemi.com


Rev. A.10 - August, 2014
SM3317NSQA ®

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Rating Unit


V DSS Drain-Source Voltage 30
V
VGSS Gate-Source Voltage ±20
a T A =25°C 12
ID Continuous Drain Current (V GS =10V)
T A =70°C 10
a
IDM Pulsed Drain Current (VG S =10V) T A =25°C 40
c T C =25°C 34
ID Continuous Drain Current (V GS =10V) A
T C =70°C 21
c
ID M Pulsed Drain Current (VG S =10V) T C =25°C 80
a
IS Diode Continuous Forward Current 1
b
IAS Avalanche Current, Single pulse L=0.1m H 23
b
EAS Avalanche Energy, Single pulse L=0.1m H 25 mJ
TJ Maxim um Junction Temperature 150
°C
TST G Storage Tem perature Range -55 to 150
a T A =25°C 2.5
PD Maxim um Power Dissipation
T A =70°C 1.6
W
c T C =25°C 25
PD Maxim um Power Dissipation
T C =70°C 16
a t ≤ 10s 50
R θJA Therm al Resistance-Junction to Am bient
Steady State 70 °C/W
c
R θJC Therm al Resistance-Junction to Case Steady State 5
2
Note a:Surface Mounted on 1in pad area, t ≤ 10sec.
Note b:UIS tested and pulse width limited by maximum junction temperature 150 o C (initial temperature Tj=25 oC).
o
Note c:The power dissipation P D is based on TJ(MAX) = 150 C, and it is useful for reduc ing junction-to-case thermal
res istance ( RθJC ) when additional heat sink is used.

Copyright  Sinopower Semiconductor, Inc. 2 www.sinopowersemi.com


Rev. A.10 - August, 2014
SM3317NSQA ®

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit


Static Characteristics
BVDS S Drain-Source Breakdown Voltage V GS=0V, I DS=250µA 30 - - V
V DS=24V, VGS=0V - - 1
I DSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage V DS=VGS, ID S=250µA 1.3 1.9 2.5 V
IGSS Gate Leakage Current V GS=±20V, VDS=0V - - ±100 nA
a V GS=10V, IDS=20A - 10 11.5
R DS(ON) Drain-Source On-state Resistance mΩ
V GS=4.5V, I DS=20A - 13 15.5
Diode Characteristics
a
VSD Diode Forward Voltage I SD =1A, VGS=0V - 0.7 1.1 V
b
trr Reverse Recovery Time - 18.5 - ns
b
I SD =20A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge - 10 - nC
b
Dynamic Characteristics
RG Gate Resistance V GS=0V,VDS=0V,F=1MHz 2.0 2.5 3.4 Ω
Ciss Input Capacitance V GS=0V, 630 760 910
Coss Output Capacitance V DS=15V, 105 130 155 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 54 70 94
td(ON) Turn-on Delay Time - 8 14
tr Turn-on Rise Time V DD =15V, RL =15Ω, - 10 17
I DS=1A, VGEN =10V, ns
t d(OFF) Turn-off Delay Time R G=6Ω - 23 42
tf Turn-off Fall Time - 5 12
b
Gate Charge Characteristics
V DS=15V, VGS=10V,
Qg Total Gate Charge - 14 17
I DS=20A
Qg Total Gate Charge - 6.1 8
nC
Qgth Threshold Gate Charge V DS=15V, VGS=4.5V, - 1.4 1.9
Qgs Gate-Source Charge I DS=20A - 2.4 2.9
Q gd Gate-Drain Charge - 2.3 3.2
Note a:Pulse test ; pulse width ≤ 300 µs, duty cycle ≤ 2%.
Note b:Guaranteed by design, not subject to production testing.

Copyright  Sinopower Semiconductor, Inc. 3 www.sinopowersemi.com


Rev. A.10 - August, 2014
SM3317NSQA ®

Typical Operating Characteristics

Power Dissipation Drain Current

3.0 14

12
2.5

10

ID - Drain Current (A)


2.0
Ptot - Power (W)

8
1.5
6

1.0
4

0.5
2
o o
TA=25 C TA=25 C,VG=10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

300 2
Normalized Transient Thermal Resistance

1 Duty = 0.5
100
0.2
it
im

0.1
)L
on
ID - Drain Current (A)

10
s(

0.05
Rd

0.1
300µs 0.02
1ms
1 0.01
10ms

100ms 0.01
Single Pulse
1s
0.1
DC

2
Mounted on 1in pad
o o
TA=25 C RθJA : 35 C/W
0.01 1E-3
0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 100

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright  Sinopower Semiconductor, Inc. 4 www.sinopowersemi.com


Rev. A.10 - August, 2014
SM3317NSQA ®

Typical Operating Characteristics (Cont.)

Power Dissipation Drain Current

30 40

25
32

ID - Drain Current (A)


20
Ptot - Power (W)

24

15

16
10

8
5

o o
TC=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

200 3
Normalized Transient Thermal Resistance

100 1 Duty = 0.5


100µs
0.2
it
Lim

0.1
n)
ID - Drain Current (A)

s(o

0.1
0.05
Rd

10
1ms 0.02
0.01
0.01

10ms
1
DC
1E-3

o Single Pulse o
TC=25 C RθJC :5 C/W
0.1 1E-4
0.01 0.1 1 10 100 1E-6 1E-5 1E-4 1E-3 0.01 0.05

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright  Sinopower Semiconductor, Inc. 5 www.sinopowersemi.com


Rev. A.10 - August, 2014
SM3317NSQA ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

40 20

VGS=4,4.5,5,6,7,8,9,10V
35 18

RDS(ON) - On - Resistance (mΩ)


30 16
3.5V
ID - Drain Current (A)

25 14 VGS=4.5V

20 12
VGS=10V
15 10

10 8
3V
5 6

0 4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 8 16 24 32 40

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

35 1.6
IDS=20A IDS =250µA
30 1.4
Normalized Threshold Voltage
RDS(ON) - On Resistance (mΩ)

25 1.2

20 1.0

15 0.8

10 0.6

5 0.4

0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright  Sinopower Semiconductor, Inc. 6 www.sinopowersemi.com


Rev. A.10 - August, 2014
SM3317NSQA ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0 40
VGS = 10V
1.8 IDS = 20A
Normalized On Resistance

1.6 10

IS - Source Current (A)


o
Tj=150 C
1.4

1.2 o
Tj=25 C

1.0
1
0.8

0.6

0.4
o
RON@Tj=25 C: 10mΩ
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1000 10
Frequency=1MHz VDS=15V
900 9 I =20A
DS

800 8
VGS - Gate - source Voltage (V)

Ciss
700 7
C - Capacitance (pF)

600 6

500 5

400 4

300 3

200 2
Crss Coss
100 1

0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright  Sinopower Semiconductor, Inc. 7 www.sinopowersemi.com


Rev. A.10 - August, 2014
SM3317NSQA ®

Typical Operating Characteristics (Cont.)

Transfer Characteristics
60

50

o
Tj=125 C
ID - Drain Current (A)

40

30

20

o
10 Tj=25 C o
Tj=-55 C

0
0 1 2 3 4 5 6

VGS - Gate-Source Voltage (V)

Copyright  Sinopower Semiconductor, Inc. 8 www.sinopowersemi.com


Rev. A.10 - August, 2014
SM3317NSQA ®

Avalanche Test Circuit and Waveforms

VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD

VDD
tp IL EAS
0.01Ω

tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD

10%
tp VGS
td(on) tr td(off) tf

Copyright  Sinopower Semiconductor, Inc. 9 www.sinopowersemi.com


Rev. A.10 - August, 2014
SM3317NSQA ®

Package Information
DFN3x3-8

D A
D1 D2

E2
E1
E

E3

K
L
A1
e b A3

S DFN3x3-8 RECOMMENDED LAND PATTERN


Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 0.80 1.00 0.031 0.039

A1 0.00 0.05 0.000 0.002


A3 0.10 0.25 0.004 0.010

b 0.24 0.35 0.009 0.014


D 2.90 3.30 0.114 0.130
D1 2.90 3.10 0.114 0.122
D2 2.25 2.45 0.089 0.096

E 3.10 3.30 0.122 0.130

E1 2.90 3.10 0.114 0.122

E2 1.65 1.85 0.065 0.073


E3 0.56 0.58 0.022 0.023 UNIT: mm
e 0.65 BSC 0.026 BSC
K 0.475 0.775 0.019 0.031
L 0.30 0.50 0.012 0.020

Copyright  Sinopower Semiconductor, Inc. 10 www.sinopowersemi.com


Rev. A.10 - August, 2014
SM3317NSQA ®

Carrier Tape & Reel Dimensions


OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 A
OD1 B
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F
8.4+2.00 13.0+0.50
178.0±2.00 50 MIN. 1.5 MIN. 20.2 MIN. 8.0±0.20 1.75±0.10 3.5±0.05
-0.00 -0.20
DFN3x3-8
P0 P1 P2 D0 D1 T A0 B0 K0
(punch type)
1.5+0.10 0.6+0.00
4.0±0.10 8.0±0.10 2.0±0.05 1.5 MIN. 3.35±0.20 3.35±0.20 1.30±0.20
-0.00 -0.40
(mm)

Copyright  Sinopower Semiconductor, Inc. 11 www.sinopowersemi.com


Rev. A.10 - August, 2014
SM3317NSQA ®

Taping Direction Information


DFN3x3-8

USER DIRECTION OF FEED

Classification Profile

Copyright  Sinopower Semiconductor, Inc. 12 www.sinopowersemi.com


Rev. A.10 - August, 2014
SM3317NSQA ®

Classification Reflow Profiles


Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate


3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.


* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)


3 3
Package Volume mm Volume mm
Thickness <350 ≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package Volume mm 3 Volume mm3 Volume mm 3
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program


Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax
HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050

Copyright  Sinopower Semiconductor, Inc. 13 www.sinopowersemi.com


Rev. A.10 - August, 2014