MODULE 4

CORROSION CONTROL
 CORROSION CONTROL
Cathodic Protection
• The principle involved in cathodic protection is to
force the metal to be protected to behave like a
cathode.
• Since, there will not be any anodic area on the
metal, corrosion does not occur.

There are two types of cathodic protection.

• Sacrificial anodic protection method
• Impressed current cathodic protection method.
SACRIFICIAL ANODIC PROTECTION METHOD

• In this method, the metallic structure to be

protected is made cathode by connecting it with
more active metal (anodic metal).
• So that all the corrosion will concentrate only
on the active metal.
• The artificially made anode thus gradually gets
corroded protecting the original metallic
structure.
• Hence this process is otherwise known as
sacrificial anodic protection.
Examples of sacrificial anode
• This method is used for the protection of
ships and boats.
• Sheets of zinc and magnesium are hung
around the hull of the ship.
• Zinc and magnesium being anodic to iron
get corroded.
• Since they are sacrificed in the process
of saving iron (anode), they are called
sacrificial anodes.
A Sketch of Sacrificial Anodic Protection

5
Applications of Sacrificial Anode
• Protection of underground pipelines and
cables from soil corrosion.
• Magnesium rods are inserted in to
domestic water boilers or tanks to prevent
the formation of rusty water.
• Calcium metal slag's are employed to
minimize engine corrosion.
 IMPRESSED CURRENT CATHODIC PROTECTION

In this method, an impressed current is

applied in the opposite direction to nullify
the corrosion current and convert the
corroding metal from anode to cathode.
This can be done by connecting negative
terminal of the battery to the metallic
structure to be protected.
Positive terminal of battery is connected to
an inert anode. inert anode used for this
purpose is graphite or platinised titanium.
The anode is surrounded by ‘backfill’
(containing mixture of gypsum, coke,
sodium sulphate) to improve the
electrical contact between the anode and
the surrounding soil.

APPLICATION OF IMPRESSED CURRENT

PROTECTION
This type of cathodic protection is
applied to open water-box coolers, water
tanks, buried oil and water pipes,
condensers, marine piers, transmission
line towers, etc.,
Sketch of IMPRESSED CURRENT CATHODIC
PROTECTION
9
 Comparison of sacrificial anode and
impressed current cathodic method

Sacrificial anodic Impressed current

method method
No external power External power
supply is necessary. supply must be
This method present.
requires periodical Here anodes are
replacement of stable and do not
sacrificial anode. disintegrate.
Investment is low. Investment is more.
Soil corrosion Soil corrosion
effects are not effects are taken
taken in to in to account.
account.
This is most This method is
economical well suited for
method especially large structures
when short-term and long term
protection is operations.
required.
 CORROSION INHIBITORS

DEFINITION
A corrosion inhibitors is ‘a substance which when
added in small quantities to the aqueous corrosive
environment effectively decreases the rate of
corrosion of the metal, by forming a protective film
either on the anode or cathode surface’.

Inhibitors are classified in to three types,

 ANODIC
 CATHODIC
 VAPOUR PHASE
 ANODIC INHIBITORS

 Chromates, phosphates, nitrite, nitrate,

inhibit the anodic corrosion reaction by
forming sparingly soluble compound with a
newly produced metal ion (at the anode).
 They are absorbed on the metal surface
forming a protective film or barrier there- by
reducing corrosion rate.
 This kind of corrosion rate is not fully
reliable since certain areas left uncovered by
the film can produce severe corrosion.
 CATHODIC INHIBITORS

In acidic solution, the main cathodic

reaction is evolution of hydrogen.
2H+(aq) +2e- → H2 (g)
• In an acidic solution, the corrosion can
be controlled by slowing down the
diffusion of H+ ions through the cathode.
• This can be done by adding organic
inhibitors like amines, pyridine, azoles,
etc.
They absorb over the cathodic metal
surface and act as a protective layer.
In a neutral solution, the cathodic reaction
is,
H2O + ½ O2 + 2e- → 2OH-(aq)
The formation of OH- ions is only due to the
presence of oxygen.
By eliminating the oxygen from the medium,
the corrosion rate can be reduced.
O2 can be removed by adding some reducing
agents like Na2SO3 or by deaeration.
Salts of Zn, Mg, Ni are employed as they
form insoluble metallic hydroxide which
forms impermeable self barriers.
 VAPOUR PHASE INHIBITORS
Vapour phase inhibitors are organic
inhibitors which readily sublime and form a
protective layer on the metal surface.

Example : Dicyclohexyl ammonium nitrite,

Benzotriazole.

Vapour phase inhibitors are used in the

protection of machineries, sophisticated
equipments, etc. which are sent by ships.

The condensed inhibitor can be easily wiped

off from the metal surface.
 PROTECTIVE COATING

INTRODUCTION
 Protective coatings are used to protect
the metals from corrosion.
 It acts as a physical barrier between the
coated metal surface and the
environment.
 They impart some special properties such
as hardness, electrical properties and
thermal insulating properties to the
protected surface.
 Protective
coatings

Inorganic coating Organic coating

• Metallic coating 1. Paints
• Chemical 2. Varnishes
Conversion 3. Enamels
4. Ceramic
 Sample Preparation
• Mechanical cleaning – To remove loose scale
and rust, using hammer, wire-brushing, grinding
and polishing.
• Sandblasting – To clean large surface areas in
order to produce enough roughness for good
adherence of protective coating, using sand
with air stream at 25-100 atm.
• Solvent Cleaning – To remove oil, grease, rust
using organic solvents like alcohol, xylene,
toluene, hydrocarbons followed by cleaning hot
water or steam.
19
 Sample Preparation (contd..)

• Alkali Cleaning – To remove old paints that

are soluble in alkaline medium using
chemicals like NaOH, Na3PO4 etc. After
cleaning, the metal is washed with 1%
chromic acid solution.

• Acid pickling and etching – Base metal is

dipped inside acid solution at a higher
tempt. Acids used are HCl, H2SO4, H3PO4,
HNO3, under dilute conditions.
20
 Metallic coatings
• Anodic coating:
It is produced by anodic coating metals (Zn, Al,
Cd) on the surface of base metal (Fe) based on
the relative negative electrode potential.

Crack

Zn film
Eozn = -0.76V
Steel (or) Fe EoFe = -0.44V
Cathodic coating:
It is produced by cathodic coating metals (Sn,
Cr, Ni) on Fe surface based on the relative
positive electrode potential of coat metal.

Crack

Sn film
EoSn = -0.14V
Steel (or) Fe EoFe = -0.44V
 Methods of application of thick metallic coating

Galvanizing
• Hot dipping Tinning
• Metal cladding
• Electroplating – Cu, Cr, Ni, Au, Ag
• Cementation
• Vacuum metalizing
• Metal spraying
 Hot Dipping

• It is one of the common method of applying

metallic coating on the surface of base
metals.
• Hot dipping is a process of coating the base
metal by immersing it in the molten coat
metal.
• Examples: Galvanizing and Tinning

24
Galvanizing: Fe or steel is coated with a thin coat
of Zn by immersing in molten Zn to prevent
rusting.
• Fe or steel base metal is cleaned by acid pickling
using dil. H2SO4 (60-90 0C) for 15-20 min.
• Base metal dipped in molten Zn (430 0C) and
then passed through rollers to correct the
thickness of the film.
• NH4Cl flux used to protect the surface of molten
Zn from oxide formation.
• Annealed at 250 0C and cooled slowly
• Coating of Iron pipes, screws, bolts, wires, etc.
• Poisonous for utensils that store food stuffs
25
Galvanization process

NH4Cl flux to
avoid ZnO
formation

Hot air Galvanized

Steel sheet Steel Sheet
Pair of Hot
rollers

Annealing
chamber
250oC

Hot air

Excess Zn
Washing bath Molten Zn at
Dil. H2SO4 at Collector
425 – 430oC
60 – 90oC

26
Tinning: In this process tin is coated over mild
steel sheets immersed in molten tin (Sn).
• The sheet is subject to acid pickling and passed
through a bath of molten tin covered with a flux
of ZnCl2.
• After coating, the sheet is passed through palm
oil to protect from oxidation
• Finally the sheet is passed to roller to get
uniform thickness.
• It is used for the coating of steel, Cu and brass
sheets that store food stuffs.

27
Process of Tinning

ZnCl2 flux to
avoid SnO Tinned
formation Steel Sheet
Steel sheet

Hot rollers

Dil. H2SO4 at
60 – 90oC
Palm oil
Molten Sn
Acid Pickling

28
• Hot-dip galvanizing deposits a thick robust layer that may be
more than is necessary for the protection of the underlying
metal in some applications. This is the case in automobile
bodies, where additional rust proofing paint will be applied.

• For example, corrugated iron sheet roofing will start to

degrade within a few years despite the protective action of the
zinc coating.

• Marine and salty environments also lower the lifetime of

galvanized iron because the high electrical conductivity of sea
water increases the rate of corrosion. Galvanized car frames
exemplify this; they corrode much quicker in cold
environments due to road salt.

29
 ELECTROPLATING
PRINCIPLE

Electroplating is the process in which the coat metal

is deposited on the base metal by passing a direct
current through an electrolytic solution containing
the soluble salt of the coating metal.

Electroplating is probably the most important and

most frequently applied industrial method of
producing metallic coatings. The metal film
produced is quite uniform with little or no pinholes
per unit area.

When the thickness of the deposit increases, the

number of pinholes decreases.
30
• The base metal to be plated is made
cathode of an electrolyte cell, whereas the
anode is either made of the coating metal
itself or an inert material of good electrical
conductivity.

THEORY
If the anode is made of coating metal itself
in the electrolytic cell, during electrolysis,
the concentration of electrolytic bath
remains unaltered, since the metal ions
deposited from the bath on cathode are
replenished continuously by the reaction of
free anions with the anode. 31
Objectives of electroplating:

(i) To increase the resistance to corrosion and

chemical attack of the plated metal.
(ii) To obtain a polished surface
(iii) To improve hardness and wear resistance
Example: Electroplating of Cu, Au, Ag, Cr, Ni, Sn etc.

Uses of electroplating:

(i) It is often used in electronic industries for

making printed circuit boards, edge connectors,
semiconductor lead-out connection
(ii) It is also used in the manufacture of jewelery,
refrigerator, electric iron etc. 32
 Factors affecting electroplating
• Surface cleaning – for strong adherent
• Concentration of electrolyte – Moderate conc. Is
preferred for uniform coating
• Conductivity and stability of electrolyte - Good
• Thickness of the deposit – for decorative purpose
thin coating and for corrosion protection multiple
coating.
• Current density (current per unit of the base metal)
should be low for uniform controlled deposition
• Additives: Ensure strong adherence and mirror
smooth coating.
• pH of the electrolytic bath between pH 4.0 - 5.5
33
• Increase in concentration of Electrolyte :
increases plating
• Increase in amount of current : increases plating.
There is more energy for ions to move towards
electrodes.
• Time : longer time, even if current is same can
allow more ions to pass through.
• Surface area of anode is greater, it enhances
plating.
• Distance between electrodes : if distance
between electrodes is smaller, ions need less
energy to flow from anode to cathode.
34
 Electroplating of Cu

• For electroplating of Cu on metal surface,

• Electrolyte: (3-5%) H2SO4 / (15-30%) CuSO4
• Anode: Pure Cu metal or Graphite (inert)
• Cathode: Metal (Object or substrate) to be coated
• Additive: Boric acid or gelatin
Ionization reaction of electrolyte:
CuSO4 Cu2+ + SO42- ; H2SO4 2H+ + SO42-

On passing current: Cu2+ + 2e- Cu (at cathode)

Cu + SO42- CuSO4 + 2e- (at anode)

Due to common ion effect, the ionization rate of Cu2+ is controlled and the deposition
process can also be controlled, with a current density of 0.5 to 1.5 ampere/dm2.
 Electroplating process

1. CuSO4 Cu2+ + SO42- (At cathode, reduction process)

2. Cu + SO42- CuSO4 + 2e- (At anode, oxidation of metal )

DC battery

Cu
(Anode) Steel object
+ ve Cu2+ (cathode) (-ve)
Cu2+

Cu2+ SO42-
Cu
deposited
surface
 Thin-Film Coatings (nm)
• PVD Coating (Physical Vapor Deposition)
• CVD Coating (Chemical Vapor Deposition)

PVD
Physical Vapour Deposition, PVD a group of vacuum
coating techniques that are used to deposit thin film
coatings that enhance the properties and performance of
tools and machine components.

PVD coatings are used in a vast array of industries and

thousands of applications as diverse as "self-cleaning"
windows, medical implants, cutting tools, decorative
fittings and Formula 1 racing parts. 37
Deposition techniques

38
 Physical Vapour Deposition (PVD)

H2 = 50 sccm PVD Chamber

N2 = 15 sccm

Substrate
Ni film

Heater

Suction valve
N2
(or) Ni Source
2000oC
H2
To vacuum pump
39
4/21/2018 4:09 PM 39
Nanotechnology
 Description of a PVD Equipment
The parts to be coated are first cleaned. The cleaning
process varies depending on the level of quality from the
electroplater, substrate material and geometry.

The parts are loaded into the vacuum chamber on custom

fixtures designed to optimize the chamber load size and
ensure coating uniformity.

The vacuum chamber is evacuated to 10-6 torr (high vacuum)

to remove any contaminants in the system.

The vacuum chamber is backfilled with an inert gas argon

and ionized, resulting in a glow discharge (plasma). This is
the gas cleaning stage and prepares the parts for the initial
metal deposition. 40
 How does it work?

The process involved four steps:

• Evaporation.
• Transportation.
• Reaction.
• Deposition. 41
During this stage, a target, consisting of the material to be deposited is bombarded
by a high energy source such as a beam of electrons or ions.This dislodges atoms
from the surface of the target, ‘vaporising’ them. (OR) The target can be vaporized
either by cathodic arc deposition or by evaporation deposition method.

This process simply consists of the movement of ‘vaporised’ atoms from the
target to the substrate to be coated and will generally be a straight line affair.

In some cases coatings will consist of metal oxides, nitrides, carbides and other such
materials. In these cases, the target will consist of the metal.The atoms of metal will
then react with the appropriate gas during the transport stage. For the above
examples, the reactive gases may be oxygen, nitrogen, acetylene or methane.

This is the process of coating build up on the substrate surface.

Depending on the actual process, some reactions between target materials and the
reactive gases may also take place at the substrate surface simultaneously with
42
the
deposition process.
 Different types of PVD coating
• Cathodic Arc Deposition: In which an electric arc is used
to vaporize material from a cathode target. The
vaporized material condenses on a substrate, forming a
thin film.

• Evaporative deposition: In which the material to be

deposited is heated to a high vapor pressure by
electrically resistive heating in "low" vacuum.

• Sputter deposition: In which a glow plasma discharge

(usually localized around the "target" by a magnet)
bombards the material sputtering away as a vapor.

• Ion plating: In which the material is heated to a high

vapor pressure and a plasma is established to ionize the
evaporating species. These species physically implant
into the substrate producing strong coating bond. 43
PVD is a process to produce a metal vapor that can be
deposited on conductive materials as a thin highly adhered
pure metal or alloy coating.
The process is carried out in a vacuum chamber at high
vacuum (10-6 torr).

Single or multi-layer coatings can be applied during the same

process cycle.
Additionally the metal vapor can be reacted with various
gases to deposit Oxides, Nitrides, Carbides or Carbonitrides.

The coating method involves purely physical processes

such as high temperature vacuum evaporation or plasma
sputter bombardment rather than involving a chemical
reaction at the surface to be coated.
44
 Titanium Nitride coated punches
Aluminium Chromium
Titanium Nitride coated

Aluminium Titanium Nitride coated

45
Zirconium nitride (ZrN) is a hard, yellow-gold colored
coating with exceptional wear and corrosion
resistance, used in plumbing and door hardware
industry.

Introducing measured amounts of nitrogen into the

chamber during the zirconium deposition cycle
produces zirconium nitride.

Chromium nitride is produced in much the same way.

Simply by adding an additional gas such as acetylene
(C2H2), you can create chromium carbonitride. This is a
gray to black color.
46
 • TiN – 2900 HV – Gold
• ZrN – 2800 HV – Gold
• TiAlN – 2600 HV – Brown
• TiCN – 4000 HV – Silver
• CrN – 2500 HV – Silver
• DLC – 1000 to 5000 HV - Black

Coating processes are performed at 300 0C or upto 2800 0C.

The higher temperature processes usually produce optimum
coating properties but sometimes results in softening of
substrates especially steel.

Thickness usually in the range of 1 to 2 μm.

47
 Cathodic Arc deposition
• In the cathodic arc deposition process, a pulsed or
continuous high current-density, low voltage electric
current is passed between two separate electrodes
(cathode and anode) under low pressure vacuum,
vaporizing the cathode material while simultaneously
ionizing the vapor, forming a plasma.
• The high current density (usually 104-106 Amp/cm2)
causes arc erosion by vaporization and melting while
ejecting molten solid particles from the cathode surface,
with a high percentage of the vaporized species being
ionized with elevated energy (50-150eV) and some
multiply charged.

48
• For example, in the case of TiN, as the vaporized
titanium (cathode target) passes through the arc, it
becomes ionized forming a plasma.
• The plasma is directed towards the substrate’s
surface, and in the presence of nitrogen, forms a
TiN coating.

• Similarly, TiAl, TiSi, TiCr, etc. targets can be used

to produce TiAlN, TiSiN, TiCrN, etc., or using
acetylene, carbides can be formed.

49
Advantages of cathodic arc processes:

(i) High level of atom ionization in the plasma : As a result of the

high level of energy produced by this process, materials can be co-
evaporated at the same rate, thus producing stoichiometric compds.
(ii) Better adhesion can be achieved as a result of the intermixed
reaction zone
(iii) Low-processing temperatures allow for the coating of heat-
sensitive substrates/components
(iv) Multilayered coatings and functionally graded compositions can
easily be produced.

Disadvantages of cathodic arc processes:

• Coating complex geometries can be difficult due to line-of-site

process
50
Evaporative Deposition

51
 In evaporation the substrate is placed inside a vacuum
chamber, in which a block (source) of the target material to
be deposited is also located.

 The source (target) material is then heated to the point

where it starts to boil and evaporate.

 The vacuum is required to allow the molecules to

evaporate freely in the chamber, and they subsequently
condense on all surfaces.

 This principle is the same for all evaporation

technologies, only the method used to the heat (evaporate)
the source material differs.

There are two popular evaporation technologies, which

are e-beam evaporation and resistive evaporation each 52
referring to the heating method.
 Sputtering
• Coating can be done for both conductive (dc) and non-
conductive (RF sputtering) materials
• DC sputtering – the workpiece and substance to be
coated are connected to high voltage dc power supply.
• Vacuum chamber is filled with controlled amount of
argon gas to establish a pressure of 10-4 torr.
• The supplied direct current energizes the chamber
creating a plasma between the workpiece and the
material to be coated.
• The argon atoms get ionized and accelerated to bombard
on the workpiece resulting in the sputtering of atoms,
which are transported and coated on the substance
53
Sputtering Deposition

54
55
 Ion implantation
• It is the process of impinging ions of elements on the surface
of a material with sufficient energy (velocity) that the ions
penetrate into the atomic lattice of the substrate.
• The process is performed in a vacuum chamber.
• Ions are usually produced by an ion gun or by passing a gas
through an electron beam or plasma.
• The ions are accelerated to the substrate using a high intensity
electromagnetic force (1-100 KeV).
• The depth of ion implantation (penetration into the substrate) is
usually between 10 nm - 1 μm.
• Various atomic species such as nitrogen, carbon, boron,
phosphorous, arsenic, chromium, etc., can be implanted.
• Implantation is not performed on soft materials rather it is
applied on hard materials such as tool steel to improve wear
properties.
• Part heating (of substrate) is minimal (<150 0C).
• For the manufacture of amorphous substances, laser and
electron beam treatments of surface can be adopted, which
56
involves rapid heating and cooling.
 ION IMPLANTATION EQUIPMENT

Applications: Semiconducting devices,

metal finishing (surface finishing in
robotics), steel toughening
57
 CVD process
CVD involves the formation of a solid film on a surface of a heated
substrate by means of a chemical reaction in a gas phase.
The complex molecule in the vapor state impinges on the hot
substrate, decomposes and forms a thin film. These reactions are
promoted by resistance, RF or infrared radiation heating.

Example: Monds Process

150°C
Ni(CO)4 Ni + 4CO

Requirements for a CVD process

1. Vacumised chamber (10-3 mbar) connected to a rotary pump
2. Complex chamber with heating facility
3. Vapour transport SS tubes ( quarter inch)
4. Substrate holder inside the chamber with heater (flat heater –
900oC)
58
5. High Temperature valve to control the flow rate of complex vapour
 INTRODUCTION TO CVD
 Chemical vapor deposition (CVD) is a chemical process
for depositing thin films of various materials.
 In a typical CVD process the substrate is exposed to
one or more volatile precursors, which react and/or
decompose on the substrate surface to produce the
desired deposit.
 Frequently, volatile byproducts are also produced,
which are removed by gas flow through the reaction
chamber.
 CVD has become the major method of film deposition
for the semiconductor industry due to its high
throughout, high purity, and low cost of operation.
 CVD is also commonly used in optoelectronics
applications, optical coatings, and coatings of wear
resistant parts. 59
 Deposition by Chemical Vapour
Deposition (CVD)

H2 = 50 mm Hg CVD Chamber
N2 = 15 mm Hg

Ni film
HTV

Substrate
Pre
Vap Heater

Suction valve
N2
Solid
complex
(or)
H2
400oC To vacuum pump
60
4/21/2018 4:09 PM Nanotechnology 60
 Description of CVD APPARATUS
• Gas delivery system – For the supply of precursors to the
reactor chamber
• Reactor chamber – Chamber within which deposition takes
place
• Substrate loading mechanism – A system for introducing and
removing substrates, etc
• Energy source – Provide the energy/heat that is required to
get the precursors to react/decompose.
• Vacuum system – A system for removal of all other gaseous
species other than those required for the reaction/deposition.
• Exhaust system – System for removal of volatile by-products
from the reaction chamber.
• Exhaust treatment systems – In some instances, exhaust
gases may not be suitable for release into the atmosphere and
may require treatment or conversion to safe/harmless
compounds.
• Process control equipment – Gauges, controls etc to monitor
process parameters such as pressure, temperature and time.
61
 CVD Process steps
Step 1: The vapor source of the film-forming material
may be a solid, liquid, vapor or gas. Solid materials,
having sufficient vapor pressures, need to be vaporized
to transport them at moderate temperature to the
deposition zone where the substrate is placed, and this
is normally achieved by heating.

Step 2: Another issue is the uniformity of arrival rate of

vapor sources by transport to the hot substrates. This
uniformity in transporting the vapor source varies with
the transport medium used to transport the source to the
destination (i.e. either by high vacuum or fluid (gaseous
fluid).
62
Step 3: Deposition is the third step in a process of
developing thin-films, in which the actual growth of film
over the surface occurs. Deposition pattern is
determined by the source, transport of vapor and
conditions of deposition zone.

Step 4: Once the deposition is over, the next step is the

analysis of coated thin-films by various techniques.
Analysis of thin-films can be thought of as the final stage
process of monitoring but it is important in all steps of
thin-film deposition.

63
 PRECURSOR
Precursor compounds are the one that provide a single
element to the deposited material, with others being
volatilized during the CVD process.

However sometimes precursors may provide more than

one element.

Precursor compounds simplify the delivery system, as

they reduce the number of reactants required to produce
a given compound.

Materials are deposited from the gaseous state during

CVD.

Thus precursors for CVD processes must be volatile, but

at the same time stable enough to be able to be delivered
to the reactor.
64
 TYPICAL PRECURSOR MATERIALS
Halides - TiCl4, TaCl5, WF6, etc
Hydrides - SiH4, GeH4, AlH3(NMe3)2, NH3, etc.

Metal Organic Compounds:

Metal Alkyls - AlMe3, Ti(CH2t-Bu)4, etc
Metal Alkoxides – Ti (OiPr )4, etc
Metal Dialkylamides - Ti(NMe2)4, etc
Metal Diketonates – Cu (acac)2, etc
Metal Carbonyls - Ni(CO)4, etc
Others – include a range of other metal organic
compounds, complexes and ligands.
65
 Substrate
The substrate on which the film deposition takes place is
ultrasonically cleaned and fastened to the substrate
holder.
The substrate holder is attached to the manipulator shaft.
The manipulator shaft moves translationally to adjust the
distance between the ingot source and the substrate.
The shaft also rotates the substrate at a particular speed
so that the film is uniformly deposited on the substrate.
A negative bias D.C. voltage of 200 V – 400 V can be
applied to the substrate.
Often, focused high energy electrons from one of the
electron guns or infrared light from heater lamps is used
to preheat the substrate.
66
 CVD Reaction Types

• Pyrolysis
• Reduction
• Disproportionation
• Oxidation

67
Pyrolysis:
Chemical decomposition or change induced by heat

Polycrystalline silicon is deposited from silane (SiH4),

using the following reaction:

SiH4 → Si(s) + 2 H2 (g) (650 deg C)

Ni(CO)4 (g) → Ni(s) + 4CO(g) (180 deg C)

Reduction:
SiCl4 (g) + 2H2 (g) → Si(s) + 4HCl(g)
MoF6(g) + 3H2 (g) → Mo(s) + 6HF(g)
68
 Disproportionation:

• a chemical reaction in which a single substance acts as both

oxidizing and reducing agent, resulting in the production of
dissimilar substances
2GeI2 → Ge(s) + GeI4 (g)

Oxidation:
SiH4(g) + O2(g) → SiO2(s) + 2H2(g)
Compound Formation
SiCl4 (g) + CH4(g) → SiC(s) + 4HCl(g)

69