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# Introduction CHAPTER 01

## 1 Light and opto-semiconductors

1-1 Light
1-2 Opto-semiconductors

2 Opto-semiconductor lineup

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Introduction

## most vividly at 555 nm. The peak wavelength of many

1. Light and opto-semiconductors animals’ vision is mostly the same as humans. The peak
wavelength of light emitted for example by fireflies,
noctilucae, and firefly squids is a yellowgreenish color
around 500 nm on the luminescence spectrum.
1-1 Light
Light level
Definition of light
The light level can be expressed by the number of photons
Light, like radio waves, is a type of electromagnetic wave. per one second using equation (3).
The term “light” generally indicates visible light, ultraviolet
light at wavelengths shorter than visible light, and infrared W = N E = N h ν = N h c / λ ……… (3)
light at wavelengths longer than visible light.
W: light level [W]
N : number of photons per second [pcs/s]

## Wavelength The light level can also be expressed by the number of

photons per unit of time and surface area [typical unit:
Grouping electromagnetic waves into spectral bands pcs/(mm2·s)].
by wavelength shows a spectrum starting from short In addition, there are a variety of methods for expressing
wavelengths and including gamma-rays, X-rays, ultraviolet the light level. These methods can be broadly grouped
(UV) light, visible light, near infrared light, middle infrared into the radiant quantity and the photometric quantity.
light, far infrared light, and radio waves [Figure 1-1]. The radiant quantity expresses the light level as a purely
Gamma-rays and X-rays have strong particle properties physical quantity of electromagnetic waves. The photometric
and possess high energy. Radio waves are grouped into quantity on the other hand expresses the light level capable
submillimeter waves, millimeter waves, and centimeter of being captured by the human eye.
waves, as well as UHF, VHF, short, medium, long, and ultra- There are different types of radiant quantities and
long waves. The terahertz wave is an electromagnetic wave photometric quantities according to the various conditions
at a frequency around 1 THz. [Table 1-1].
Electromagnetic waves have the characteristics of both Figure 1-2 shows photosensor examples that match different
waves and particles (photons). The energy E of one light levels. The brightness around us in our daily lives is
photon at a wavelength λ is expressed by equation (1). typically several lux to several thousand lux. Normal room
brightness is usually up to several hundred lux, and a
E = h ν = h c / λ [J] .......... (1)
brightness of 500 lux is sufficient for studying or cooking.
h: Planck's constant (6.626 × 10-34 J·s) The normal dynamic range of the human eye is about
ν: frequency of light [Hz]
c: speed of light in vacuum (2.998 × 108 m/s)
three to four orders of magnitude.
λ: wavelength [m] Semiconductor photosensors (e.g., Si photodiodes) and
photomultiplier tubes have a wider dynamic range than
If the unit of photon energy (E) is in eV and the unit of
the normal human eye. PMT and MPPC are suitable for
wavelength (λ) is in µm, the energy of the photon is also
detecting weak light. Si photodiodes on the other hand
expressed as shown in equation (2).
are usually used to detect light levels higher than those
1.24
E= [eV] ……… (2) detected by PMT and MPPC.
λ
Among image sensors, cooled CCD image sensors are better
Expressing the light range sensitive to human eyes suited for low-light-level imaging. These cooled CCD image
as colors yields “wavelengths from violet at a 400 nm sensors are, for example, suitable for capturing images of the
wavelength, indigo, blue, green, yellow, orange and red moon or constellations on a clear night. CCD image sensors
at 700 nm, and are the seven colors of the rainbow.” Due or CMOS image sensors are well suited for capturing images
to the structure of the eye, people sense visible light at room brightness.
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[Figure 1-1] Wavelength range covered by photosensors and light sources
Wavelength range covered by photosensors and light sources
Blue LED Japanese firefly Green LED Yellow LED He-Ne laser Red LED

## 400 500 600 700 (nm)

Wavelength

Visible light
Gamma-ray, X-ray UV light Middle
Near infrared light infrared light Far infrared light, radio waves

(nm) (μm)

## 0.5 1 100 200 400 600 800 1 2 4 6 8 10 20 1000 2000

Short Long

ArF excimer laser Mercury spectral line IR laser diode CO2 laser

2000 1000 10 8 6 4 2 1 0.8 0.6 0.4 0.2 0.1 0.08 0.06 0.001 0.0006 (eV)
Photon energy

## High UV-C UV-B UV-A Low

Semiconductor HgCdTe
GaAs Si InGaAs InAs
band gap energy
PbS

Incandescent lamp

## Fluorescent lamp Infrared LED

Infrared ray emitted
Sunlight on Earth from human body

Si photodiode
Light sources
Photosensors InGaAs photodiode
KOTHC0010E
KOTHC0010EB

## [Figure 1-2] Light level and photosensors

Number of incident 10 0 102 104 106 108 1010 1012 1014 1016
photons
[pcs/(mm2∙s)]

10-20 10-18 10-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2

## 10-10 10-8 10-6 10-4 10-2 10 0 102 104 106

Illuminance (lx)

One sixth- One zero- Constellations Full moon Indoor lighting Sunrise or sunset Cloudy day Clear sky in
magnitude star magnitude star on clear night midsummer

Photomultiplier tube

Si photodiode

MPPC

## CCD image sensor

Note: Correlation between the number of incident photons, irradiance and illuminance is shown for light at λ=555 nm.
KOTHC0011EB

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as in the case of the optical tweezers. Laser cooling is also
Properties of light
currently being researched. In laser cooling, a laser beam
is made to strike the gaseous molecules to cool the gas by
Light behaves like a wave and yet also behaves like particles
lowering the speed of the molecules. Another potential
called photons.
use is in “photon rockets” as a means to travel through
Light reflecting from the data storage surface of a CD or
outer space.
DVD may sometimes appear as rainbow colors. This effect
is due to interference caused by diffracted light from
irregularities on the disk surface because the light behaves Using light to make measurements
like a wave. Light irradiated onto a substance generates
electrons in a phenomenon called the photoelectric effect. Measurements using light are of active and passive
This effect occurs because the light behaves like particles. methods. In the active method, light is directed onto an
Light treated as a wave is expressed by the frequency (ν) of object from a light source and the light is detected as
light as shown in equation (4). reflected light, transmitted light, scattered light, and so
on. In the passive method, on the other hand, the light
c
ν= [Hz] ……… (4) emitted from the object itself is detected.
λ
Light can also be utilized to measure time and distance.
c: speed of light in vacuum (2.998 × 108 m/s) Here, the distance to an object can be found by directing
λ: wavelength [m]
pulsed light onto an object and then measuring the time
For example, the frequency of light at λ=555 nm is 5.4 × required for that reflected light to return. This is called the
1014 Hz. time-of-flight (TOF) method.
On the other hand, the particles of light we call photons Other methods include investigating the state of various
possess an energy (hν) equivalent to that frequency (h: objects by utilizing the phase and the wavelength
Planck’s constant 6.626 × 10-34 J·s). spectrum of light and so on.
Laser light is coherent light with uniform direction of
travel, wavelength, and phase. Laser light is used for
diverse tasks such as cutting or welding steel plates, and
in “stealth dicing” for cutting semiconductor wafers. In
biotechnology it is used as “optical tweezers” to capture
a specific cell by irradiating laser light onto a particular
cell. Laser light can be used to exert a force on a material

## [Table 1-1] Expressing the light level

Light level condition
Light level name Unit Light level name Unit

Total radiant energy emitted from a light source in unit time Radiant flux W Luminous flux lm (lumen)

Quantity of energy emitted from a point light source per unit solid angle Radiant intensity W/sr Luminous intensity cd (candela)

Radiant energy per unit area of a light source having an emitting area Radiant exitance W/m2 Luminous emittance lm/m2

Radiant energy per unit area of a light source having an emitting area per unit solid angle Radiance W/(m2·sr) Luminance cd/m2

Radiant or luminous flux striking a surface per unit area Irradiance W/m2 Illuminance lx (lux)

## lux photo foot candle watt per square centimeter*2

lx (lm/m2) ph (lm/cm2) fc (lm/ft2) W/cm2

## 2.0 × 105 2.0 × 10 1.9 × 104 1

*1: Indicates the extent of brightness as measured by a sensor possessing spectral response (conforms to CIE) limited to the sensitivity of the human eye
*2: Total irradiance (measured value) from light source A, a CIE standard light source (color temperature 2856 K)

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Besides semiconductors made from a single element
1-2 Opto-semiconductors such as Si or Ge, there are also semiconductors made
from multiple elements, such as InGaAs (indium gallium
arsenide) and GaAs (gallium arsenide). These are called
Semiconductors
compound semiconductors.
Compound semiconductors also include N-type and
Some substances such as metal are conductors since they
P-type semiconductors. In the GaAs semiconductor, the
easily conduct electricity; while others such as glass are
gallium (Ga) contains three outermost electrons and the
insulators since they do not easily conduct electricity.
arsenic (As) contains five outermost electrons. Adding
Semiconductors have properties that are midway between
zinc (Zn) having two outermost electrons as the dopant
conductors and insulators. Left alone they do not easily
into the semiconductor material here forms a P-type
conduct electricity, however, by exposing them to light or
semiconductor, and adding tellurium ( Te) having six
heat or by adding dopants, the semiconductor properties
outermost electrons forms an N-type semiconductor.
change and electricity easily flows.
Moreover, adding silicon (Si) having four outermost
Si (silicon) and Ge (germanium) are well-known semiconductors.
electrons as the dopant forms an N-type semiconductor
Semiconductors made just from pure Si or Ge are called
when substituted for part of the gallium (Ga) or forms a
intrinsic semiconductors. Adding another element as a
P-type semiconductor when substituted for part of the
dopant to the intrinsic semiconductor creates impurity
arsenic (As).
semiconductors. These impurity semiconductors include
both N (negative) and P (positive)-type semiconductors.
Adding an element having more outermost electrons Opto-semiconductors
(valence electrons) than the atoms in the intrinsic
semiconductor as the dopant having a freely moving surplus Some semiconductors are capable of converting light to
electron forms an N-type semiconductor. However, electricity while others on the other hand can convert
adding an element having fewer outermost electrons electricity to light. Semiconductors possessing such
than the atoms in the intrinsic semiconductor as the functions are called opto-semiconductors.
dopant having a freely moving positive carrier (hole) with Hamamatsu provides a wide range of opto-semiconductors.
a positive charge where one electron is missing forms a Please see the description listed in section 2, “Opto-
P-type semiconductor. semiconductor lineup,” in this chapter.
Fabricating a single semiconductor piece where N-type
semiconductor and P-type semiconductor materials are
Classification of photosensors
in contact with each other creates a difference in electrical
potential at the PN junction which is the interface between
Photosensors are classified into types utilizing the
the N-type and P-type semiconductors. This difference in
photoelectric effects (where a substance absorbs light and
potential occurs because the energy bands “bend” at the
emits electrons) and thermal types as shown in Table 1-4.
PN junction when the Fermi levels (electrical potential
Photoelectric effects consist of internal photoelectric effects
where the probability of electrons is 50%) of the P-type
that occur internally within the opto-semiconductor and
and N-type semiconductors are lined up at the same
external photoelectric effects where electrons are emitted
energy level [Figure 1-3]. A depletion layer (region with no
externally such as from the photocathode of photomultiplier
electrons and holes) is formed at the PN junction. Since
tubes. Internal photoelectric effects can be divided into
ionized dopants are present within this depletion layer, an
photovoltaic effect where the incident light causes a voltage
electrical field is created within. When the semiconductor is
to appear at the PN junction and photoconductive effect
irradiated by light, electrons and holes are generated. When
where the incident light changes the internal resistance.
these electrons and holes diffuse into the depletion layer,
Thermal types include electromotive force types that
the internal electrical field will then force them to move in
convert heat into electromotive force, conductive types
their respective reverse directions causing electrical current
that convert heat into conductivity, and surface charge
to flow.
types that convert heat into a surface charge. Thermal type
[Figure 1-3] PN junction photosensors offer the advantages that sensitivity is not
dependent on the wavelength and also that no cooling is
P-type Depletion N-type
semiconductor layer semiconductor needed.However, there are drawbacks in response speed
and detection capability.

Conduction band
Fermi level
Band gap
energy

Valence band

KPDC0033EA

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[Table 1-3] Classification of semiconductors

## •Large amount of deposit (Si)

Single element semiconductor Si, Ge •Simple crystal structure
•Relatively simple process
•High purity possible
•High-speed response
Compound semiconductor InGaAs, GaAs, GaAlAs, InP •Includes light-emitting substances
•Band gap controllable
[Table 1-4] Classification of photosensors

## Type Photosensor examples Features

Photodiode
APD, MPPC •High-speed response
Photovoltaic type Photo IC •Spectral response range: UV to near IR
Internal PSD (position sensitive detector) •Small size
photoelectric Image sensor •Integration is easy.
effect
PbS/PbSe photoconductive detector
Photoconductive type MCT photoconductive detector •Spectral response range: visible or IR
Image pickup tube (camera tube) •Response is generally slow.
Phototube •High sensitivity
External photoelectric effect Photomultiplier tube •High-speed response
Image tube •Spectral response range: UV to near IR
•Large photosensitive area possible
Electromotive force type Thermopile detector

## Thermal type Conductive type Bolometer •Sensitivity is not wavelength-dependent.

•Response is slow.
Surface charge type Pyroelectric detector

## Band gap energy of silicon Eg Approx. 1.12 (25 °C) eV

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2. Opto-semiconductor
lineup
[Product name] [Applications]

High energy particle SSD High energy physics, nuclear medicine, industrial measurement

X-ray Si photodiode for X-ray Baggage inspection, non-destructive inspection, medical equipment

Si photodiode for UV light Pollution analysis, spectroscopy, medical equipment, UV detection, colorimetry

## Diffusion type GaAsP photodiode Illuminometry, flame eyes

Visible
Point sensor Energy-saving sensors for TV and the like, light dimmers for liquid crystal
Illuminance sensor panels, backlight dimmers for cell phones, light level measurements

## Optical communication devices, information equipment, automatic control systems,

Si photodiode general electronics, car electronics, photometric equipment, medical equipment, high energy physics

## Optical communication devices, information equipment, automatic control systems,

Near IR Si APD (avalanche photodiode) general electronics, car electronics, photometric equipment, medical equipment, high energy physics

Photo IC Optical switches, office automation equipment, rotary encoders, optical fiber communications

Photosensor IR-enhanced Si photodiode/Si APD YAG laser monitoring, near infrared detection

InGaAs PIN photodiode Optical communication devices, IR laser monitoring, radiation thermometry, industrial measurement

PbS/PbSe photoconductive detector Radiation thermometry, flame eyes, moisture analysis, gas analysis, spectroscopy
IR
InSb photoconductive detector IR laser detection, spectroscopy, radiation thermometry, gas analysis, FTIR, thermal imaging
InSb/InAs/InAsSb photovoltaic detector

MCT (HgCdTe) photoconductive/photovoltaic detector Thermal cameras, radiation thermometry, FTIR, gas analysis, CO2 laser detection

## Thermopile detector Radiation thermometry, gas analysis, flame eyes

Photon counter MPPC Medical equipment, nuclear medicine, high energy physics, radiation measurement

Area image sensor Fluorescence spectroscopy, Raman spectroscopy, scientific measurement, X-ray imaging, near infrared imaging

Image sensor

## Linear image sensor Multichannel spectroscopy, spectrum analysis, optical measurement

1D
Photodiode array Multichannel spectroscopy, color analysis, spectrum analysis, position detection

## Segmented type Multi-element photodiode Position detection

Position sensor
Non-segmented type PSD (position sensitive detector) Rangefinding, displacement sensing, laser optics, automatic control systems, high energy physics

## Visible Red LED Optical switches, optical fiber communications

Light emitter
IR Optical switches, light sources for measurement devices,
Infrared LED optical communication devices, automatic control systems, rotary encoders

## Mini-spectrometer, MPPC module, APD module,

Module
distance sensor, photosensor amplifier, etc.

## [Figure 2-1] Selection guide by wavelength

Spectral range UV Visible Near IR Middle IR Far IR
Wavelength
Photosensor

Thermopile detector
emitter
Light

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3. Manufacturing process of opto-semiconductors
∙ Design of new products
Design ∙ Design of custom products Epitaxial growth process [Typical compound semiconductor fabrication process]

## [Example of custom orders]

∙ Electrical and optical
characteristics
∙ Photosensitive area
∙ Number of elements
∙ Package
∙ Reliability
Thin-film crystal growth under ultra-high vacuum in MBE equipment Thin-film crystal growth with MOCVD equipment

Wafer process
Oxidation Photolithography Etching
[Typical process of Si photodiode fabrication]

Resist

## Si wafer (before process)

Thin films are formed on wafers by Device patterns are formed by Selective etching is performed
oxidation or CVD process. photolithographic technique. on the thin film on wafers.

## Evaluation and analytical systems

Process

Critical dimension SEM Film surface analysis system X-ray fluorescence thickness meter

Measures performance and Measures foreign substances Measures metal/CVD film thickness
pattern dimensions on wafer and dopant concentration

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Main factory (lchino)
∙ Development, design
∙ Opto-semiconductor front end process (Si process)
∙ Compound semiconductor and image sensor manufacturing and inspection

Ion
Metal Metal

## Diffusion layer Diffusion layer Diffusion layer

To assembly process

Doping impurities are injected into Metal electrodes and patterns are Devices on the wafer are inspected
wafers. formed. electrically and optically.

Warpage measurement system Total reflection X-ray fluorescence analyzer Field emission SEM

Measures warpage of wafer Checks contamination elements on wafer Analyzes cross section of chip

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Assembly process
[Typical process]

Mitsue factory
∙ Opto-semiconductor back end process (assembly and inspection)
∙ Product shipment

Die bond

Dicing
Metal package

Die bond

Ceramic package

Stealth dicing

Die bond

## A laser cuts a wafer by irradiating the interior

Plastic package of the wafer.

Gold bumps

Dicing

## Gold bumps are formed on wafers by bump bonders.

or
Solder bump forming Stealth dicing

Solder bumps

## Solder bumps are formed on wafers by printing and reflow.

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Shingai factory
∙ Opto-semiconductor back end process (assembly and inspection)

## Wire-bonding Cap sealing

Test
Electrical & optical test
Metal package test equipment

Chips are connected to metal bases using gold wires. Metal caps are welded to metal bases.

## Wire-bonding Resin encapsulation

Plastic package test equipment

Chips are connected to ceramic bases using gold wires. Resin is encapsulated into ceramic bases.
Electrical & optical
characteristics are tested.
Wire-bonding Resin molding and trimming

Appearance test
Chips are connected to lead frames using gold wires. Resin is molded along lead frames and chips.
Appearance test equipment

## Flip chip bonding (gold bumps)

Underfill filling
X-ray and appearance test equipment
Chips with bumps are ultrasonically bonded to substrates by being flipped (inverted).

## The space between the substrate and chip is

filled in with resin.
Appearance of final
product is tested.

## Chips with bumps are thermocompression-bonded to substrates by being flipped (inverted).

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Evaluation and analytical systems
Assembly

## X-ray fluorescence thickness meter X-ray fluorescence analyzer 3D measurement system

Measures plating thickness of materials Analyzes components of material to Measures dimensions of materials
check RoHS compliance

## Warpage measurement system Ultrasonic observation equipment X-ray observation system

Measures surface warpage of large- Observes internal structures by ultrasonic wave Observes internal structures by X-ray
area chip

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