You are on page 1of 2

MUR1605 thru MUR1660 ®

MUR1605 thru MUR1660 Pb


Pb Free Plating Product
16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers

TO-220AB Unit : inch (mm)


Features
 Fast switching for high efficiency
.419(10.66) .196(5.00)
.387(9.85) .163(4.16)

 Low forward voltage drop .139(3.55)


MIN
.054(1.39)
.045(1.15)
 High current capability

.269(6.85)
.226(5.75)
 Low reverse leakage current

.624(15.87)
.548(13.93)
 High surge current capability
Application
 Automotive Environment|DC Motor Control
 Plating Power Supply|UPS
 Amplifier and Sound Device System etc..

.50(12.7)MIN
.177(4.5)MAX
.038(0.96) .025(0.65)MAX

Mechanical Data
.019(0.50)

 Case: Molded plastic TO-220AB Heatsink


 Epoxy: UL 94V-0 rate flame retardant
.1(2.54) .1(2.54)

 Terminals: Solderable per MIL-STD-202


method 208 Case Case Case
 Polarity:As marked on diode body
Positive Negative Doubler
 Mounting position: Any Common Cathode Common Anode Series Connection
 Weight: 2.03 grams Suffix "CT" Suffix "CA" Suffix "GD"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS


Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "CT" MUR1605CT MUR1610CT MUR1620CT MUR1630CT MUR1640CT MUR1660CT

Common Anode Suffix "CA" SYMBOL MUR1605CA MUR1610CA MUR1620CA MUR1630CA MUR1640CA MUR1660CA UNIT
Anode and Cathode Coexistence Suffix "GD" MUR1605GD MUR1610GD MUR1620GD MUR1630GD MUR1640GD MUR1660GD

Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 V

Maximum RMS Voltage VRMS 35 70 140 210 280 420 V

Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 V

Maximum Average Forward Rectified


o IF(AV) 16.0 A
Current TC=100 C

Peak Forward Surge Current, 8.3ms single


Half sine-wave superimposed on rated load IFSM 175 150 A
(JEDEC method)

Maximum Instantaneous Forward Voltage


VF 0.98 1.3 1.7 V
@ 8.0 A

Maximum DC Reverse Current @TJ=25 C


o
10.0 uA
o IR
At Rated DC Blocking Voltage @TJ=125 C 250 uA

Maximum Reverse Recovery Time (Note 1) Trr 35 nS

Typical junction Capacitance (Note 2) CJ 90 pF


o
Typical Thermal Resistance (Note 3) R JC 2.2 CW
Operating Junction and Storage -55 to + 150 o
TJ, TSTG C
Temperature Range

NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/


MUR1605 thru MUR1660 ®

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE


PEAK FORWARD SURGE CURRENT

16 200
Pulse Width 8.3ms

PEAK FORWARD SURGE CURRENT,


Single Half-Sire-Wave
AVERAGE FORWARD RECTIFIED

175 (JEDEC Method)


13
CURRENT, AMPERES

150
10

AMPERES
125

8 100

75
6

50
4
60 Hz Resistive or 25
Inductive load
0 0
0 50 100 150 1 10 100

o NUMBER OF CYCLES AT 60Hz


CASE TEMPERATURE, C

FIG.3 - TYPICAL INSTANTANEOUS FIG.4 - TYPICAL REVERSE CHARACTERISTICS


FORWARD CHARACTERISTICS
10 1000
IINSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS REVERSE CURRENT,

MUR1605-MUR1620 o
MUR1630-MUR1640 TJ=125 C
100
MICROAMPERES

1.0
AMPERES

MUR1660 10

o
TJ=25 C
0.1
1

o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100

INSTANTANEOUS FORWARD VOLTAGE, PERCENT OF RATED PEAK REVERSE VOLTAGE,%


VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE


1000 o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
JUNCTION CAPACITANCE, pF

100

10
0.1 1.0 4.0 10 100

REVERSE VOLTAGE, VOLTS

Page 2/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/