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Graphene has amazing abilities due to its unique band structure characteristics de‐ fining
its enhanced electrical capabilities for a material with the highest characteris‐ tic mobility known to exist
at room temperature. The high mobility of graphene occurs due to electron delocalization and weak
electron–phonon interaction, mak‐ ing graphene an ideal material for electrical applications requiring
high mobility and fast response times. In this review, we cover graphene's integration into infra‐ red (IR)
devices, electro‐optic (EO) devices, and field effect transistors (FETs) for ra‐ dio frequency (RF)
applications. The benefits of utilizing graphene for each case are discussed, along with examples showing
the current state‐of‐the‐art solutions for these applications. Graphene has many outstanding properties
due to its unique bonding and subse‐ quently band gap characteristics, having electronic carriers act as "
massless " Dirac‐Fermions. The material characteristics of graphene are anisotropic, having phenomenal
characteristic within a single sheet and diminished material character‐ istics between sheet with
increasing sheet number and grain boundaries. We will discuss the integration of graphene into many
electronic device applications. Graphene has the highest mobility values measured in a material at room
tempera‐ ture, allowing integration into fast response time devices such as a high electron mobility
transistor (HEMT) for RF applications. Graphene has shown promise in IR detectors by utilizing graphene
in thermal‐based detection applications.