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DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

BFQ67
NPN 8 GHz wideband transistor
Product specification 1998 Aug 27
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

FEATURES DESCRIPTION
• High power gain Silicon NPN wideband transistor in a
plastic SOT23 package. alfpage 3
• Low noise figure
• High transition frequency
• Gold metallization ensures PINNING
excellent reliability. PIN DESCRIPTION 1 2

1 base Top view MSB003


APPLICATIONS
2 emitter
Satellite TV tuners and RF portable 3 collector
communications equipment up to Marking code: V2p.

2 GHz.
Fig.1 SOT23.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT


VCBO collector-base voltage open emitter − − 20 V
VCEO collector-emitter voltage open base − − 10 V
IC collector current (DC) − − 50 mA
Ptot total power dissipation Ts ≤ 97 °C; note 1 − − 300 mW
hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 −
fT transition frequency IC = 15 mA; VCE = 8 V − 8 − GHz
GUM maximum unilateral IC = 15 mA; VCE = 8 V; f = 1 GHz − 14 − dB
power gain
F noise figure IC = 5 mA; VCE = 8 V; f = 1 GHz − 1.3 − dB

Note
1. Ts is the temperature at the soldering point of the collector tab.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 20 V
VCEO collector-emitter voltage open base − 10 V
VEBO emitter-base voltage open collector − 2.5 V
IC collector current (DC) − 50 mA
Ptot total power dissipation Ts ≤ 97 °C; note 1 − 300 mW
Tstg storage temperature range −65 +150 °C
Tj junction temperature − 175 °C

Note
1. Ts is the temperature at the soldering point of the collector tab.

1998 Aug 27 2
Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT


Rth j-s thermal resistance from junction to soldering point note 1 260 K/W

Note
1. Ts is the temperature at the soldering point of the collector lead.

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT


ICBO collector cut-off current IE = 0; VCB = 5 V − − 50 nA
hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 −
Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz − 0.7 − pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 1.3 − pF
Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF
fT transition frequency IC = 15 mA; VCE = 8 V − 8 − GHz
GUM maximum unilateral power gain IC = 15 mA; VCE = 8 V; − 14 − dB
(note 1) Tamb = 25 °C; f = 1 GHz
IC = 15 mA; VCE = 8 V; f = 2 GHz − 8 − dB
F noise figure Γs = Γopt; IC = 5 mA; VCE = 8 V; − 1.3 − dB
Tamb = 25 °C; f = 1 GHz
Γs = Γopt; IC = 15 mA; VCE = 8 V; − 1.7 − dB
Tamb = 25 °C; f = 1 GHz
Γs = Γopt; IC = 5 mA; VCE = 8 V; − 2.2 − dB
Tamb = 25 °C; f = 2 GHz
IC = 5 mA; VCE = 8 V; − 2.5 − dB
Tamb = 25 °C; f = 2 GHz; Zs = 60 Ω
Γs = Γopt; IC = 15 mA; VCE = 8 V; − 2.7 − dB
Tamb = 25 °C; f = 2 GHz
IC = 15 mA; VCE = 8 V; − 3 − dB
Tamb = 25 °C; f = 2 GHz; Zs = 60 Ω

Note 2
S 21
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB .
 2  2
 1 – S 11   1 – S 22 

1998 Aug 27 3
Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

MRA614
400 MBB301
handbook, halfpage 120
handbook, halfpage
Ptot
(mW)
h FE
300

80

200

40
100

0 0
0 50 100 150 200
0 20 40 60
Ts (oC) I C (mA)

VCE = 5 V.

Fig.3 DC current gain as a function of collector


Fig.2 Power derating curve. current, typical values.

MRA607 MBB303
0.8 10
handbook, halfpage handbook, halfpage
fT
Cre
(pF) (GHz)
8
0.6

0.4

0.2
2

0 0
0 5 10 15 0 10 20 30 40
VCB (V) I C (mA)

IC = ic = 0; f = 1 MHz. VCE = 8 V; Tamb = 25 °C; f = 2 GHz.

Fig.4 Feedback capacitance as a function of Fig.5 Transition frequency as a function of


collector-base voltage, typical values. collector current, typical values.

1998 Aug 27 4
Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

MRA611 MRA610
25 50
handbook, halfpage handbook, halfpage
gain gain
(dB) (dB)
20 40
GUM

MSG
15 Gmax
30

GUM
MSG
10 20

5 10 Gmax

0 0
0 10 20 30 10 102 103 104
IC (mA) f (MHz)

VCE = 8 V; f = 1 GHz. VCE = 8 V; IC = 5 mA.

Fig.6 Gain as a function of collector current, Fig.7 Gain as a function of frequency, typical
typical values. values.

MRA608 MRA609
50 50
handbook, halfpage handbook, halfpage
gain gain
(dB) (dB)
40 40
GUM
GUM

30 30
MSG MSG

20 20

Gmax
10 Gmax 10

0 0
2 4 2 4
10 10 103 10 10 10 103 10
f (MHz) f (MHz)

VCE = 8 V; IC = 15 mA. VCE = 8 V; IC = 30 mA.

Fig.8 Gain as a function of frequency, typical Fig.9 Gain as a function of frequency, typical
values. values.

1998 Aug 27 5
Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

MRA613
MBB308
4 5
handbook, halfpage handbook, halfpage
f = 2 GHz F
F
(dB)
(dB)
4
3
1 GHz
900 MHz 3 ZS = 60 Ω
500 MHz
2
optimum
2 source

1
1

0
0 1 10 102
1 10 100 IC (mA)
I C (mA)

VCE = 8 V. VCE = 6 V; f = 900 MHz.

Fig.10 Minimum noise figure as a function of Fig.11 Noise figure as a function of collector
collector current, typical values. current, typical values.

MBB309 MRA612
4 5
handbook, halfpage handbook, halfpage
F
F
I C = 30 mA (dB)
(dB)
4
3 IC = 0.5 mA
15 mA
3
1 mA
5 mA
2 2 mA
2

1
1

0
0 104
102 103
10 2 10 3 10 4 f (MHz)
f (MHz)

VCE = 8 V. VCE = 1 V.

Fig.12 Minimum noise figure as a function of Fig.13 Minimum noise figure as a function of
frequency, typical values. frequency, typical values.

1998 Aug 27 6
Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

handbook, full pagewidth 1

0.5 2

0.2 5

3 GHz
10
+j

0.2 1 2 5 10
0
−j
40 MHz 10

0.2 5

0.5 2

1 MBC968

VCE = 8 V; IC = 15 mA; Zo = 50 Ω.

Fig.14 Common emitter input reflection coefficient (S11), typical values.

handbook, full pagewidth 90°

120° 60°

150° 30°

40 MHz +ϕ
0.2 0.1 3 GHz
180° 0°
−ϕ

150° 30°

120° 60°
MBC967
90°

VCE = 8 V; IC = 15 mA.

Fig.15 Common emitter forward transmission coefficient (S21), typical values.

1998 Aug 27 7
Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

handbook, full pagewidth 90°


120° 60°

3 GHz
150° 30 o


0.2 0.1 40 MHz
180° 0°
−ϕ

150° 30°

120° 60°
MBC966
90°

VCE = 8 V; IC = 15 mA.

Fig.16 Common emitter reverse transmission coefficient (S12), typical values.

handbook, full pagewidth 1

0.5 2

0.2 5

10
+j
0.2 0.5 1 2 5 10
0 ∞
−j 40 MHz
3 GHz 10

0.2 5

0.5 2

1 MBC965

VCE = 8 V; IC = 15 mA; Zo = 50 Ω.

Fig.17 Common emitter output reflection coefficient (S22), typical values.

1998 Aug 27 8
Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D B E A X

HE v M A

A1

1 2 c

e1 bp w M B Lp

e
detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)


A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45

OUTLINE REFERENCES EUROPEAN


ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT23 97-02-28

1998 Aug 27 9
Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

DEFINITIONS

Data Sheet Status


Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS


These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Aug 27 10
Philips Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

NOTES

1998 Aug 27 11
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© Philips Electronics N.V. 1998 SCA60


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Printed in The Netherlands 125104/00/04/pp12 Date of release: 1998 Aug 27 Document order number: 9397 750 04295