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Control Integrated POwer System

(CIPOS™)

IGCM15F60GA

Datasheet

Datasheet Please read the Important Notice and Warnings at the end of this document V 2.91
www.infineon.com page 1 of 17 2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

Table of contents

Table of contents ................................................................................................................................................... 2


CIPOS™ Control Integrated POwer System ............................................................................................................ 3
Features .................................................................................................................................................................. 3
Target Applications ...................................................................................................................................................... 3
Description .................................................................................................................................................................. 3
System Configuration .................................................................................................................................................. 3
Pin Configuration ................................................................................................................................................... 4
Internal Electrical Schematic ................................................................................................................................. 4
Pin Assignment ...................................................................................................................................................... 5
Pin Description ...................................................................................................................................................... 5
HIN(U, V, W) and LIN(U, V, W) (Low side and high side control pins, Pin 7 - 12)......................................................... 5
VFO (Fault-output and NTC, Pin 14) ............................................................................................................................ 6
ITRIP (Over current detection function, Pin 15).......................................................................................................... 6
VDD, VSS (Low side control supply and reference, Pin 13, 16) ................................................................................... 6
VB(U, V, W) and VS(U, V, W) (High side supplies, Pin 1 - 6) .......................................................................................... 6
NW, NV, NU (Low side emitter, Pin 17 - 19) ................................................................................................................. 6
W, V, U (High side emitter and low side collector, Pin 20 - 22) ................................................................................... 6
P (Positive bus input voltage, Pin 23) .......................................................................................................................... 6
Absolute Maximum Ratings ................................................................................................................................... 7
Module Section ............................................................................................................................................................ 7
Inverter Section............................................................................................................................................................ 7
Control Section ............................................................................................................................................................ 7
Recommended Operation Conditions ................................................................................................................... 8
Static Parameters .................................................................................................................................................. 9
Dynamic Parameters ........................................................................................................................................... 10
Bootstrap Parameters ......................................................................................................................................... 10
Thermistor ........................................................................................................................................................... 11
Mechanical Characteristics and Ratings .............................................................................................................. 11
Circuit of a Typical Application ............................................................................................................................ 12
Switching Times Definition .................................................................................................................................. 13
Electrical characteristic ....................................................................................................................................... 14
Package Outline ................................................................................................................................................... 15
Revision history ................................................................................................................................................... 16

Datasheet 2 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

CIPOS™
Control Integrated POwer System
Dual In-Line Intelligent Power Module
3Φ -bridge 600V / 15A

Features Description
Fully isolated Dual In-Line molded module The CIPOS™ module family offers the chance for
 Reverse conducting IGBTs with monolithic body integrating various power and control components
diode to increase reliability, optimize PCB size and system
 Rugged SOI gate driver technology with stability costs.
against transient and negative voltage It is designed to control three phase AC motors and
 Allowable negative VS potential up to -11V for permanent magnet motors in variable speed drives
signal transmission at VBS=15V for applications like an air conditioning, a
 Integrated bootstrap functionality refrigerator and a washing machine. The package
 Over current shutdown concept is specially adapted to power applications,
which need good thermal conduction and electrical
 Temperature monitor
isolation, but also EMI-save control and overload
 Under-voltage lockout at all channels
protection.
 Low side emitter pins accessible for all phase
current monitoring (open emitter) The reverse conducting IGBTs are combined with an
 Cross-conduction prevention optimized SOI gate driver for excellent electrical
performance.
 All of 6 switches turn off during protection
 Lead-free terminal plating; RoHS compliant

System Configuration
Target Applications  3 half bridges with reverse conducting IGBTs
 Dish washers  3Φ SOI gate driver
 Refrigerators  Thermistor
 Washing machines  Pin-to-heatsink clearance distance typ. 1.6mm
 Air-conditioners
 Fans
 Low power motor drives

Datasheet 3 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

Pin Configuration
Bottom View

(24) NC
(1) VS(U)
(2) VB(U)
(23) P
(3) VS(V)
(4) VB(V)
(22) U
(5) VS(W)
(6) VB(W)
(21) V

(7) HIN(U)
(8) HIN(V) (20) W
(9) HIN(W)
(10) LIN(U)
(11) LIN(V) (19) NU
(12) LIN(W)
(13) VDD
(14) VFO (18) NV
(15) ITRIP
(16) VSS
(17) NW

Figure 1 Pin configuration

Internal Electrical Schematic


NC (24)

P (23)
(1) VS(U)
(2) VB(U) VB1 HO1

RBS1
VS1 U (22)

(3) VS(V)
(4) VB(V) VB2 HO2

RBS2 V (21)
VS2

(5) VS(W)
(6) VB(W) HO3
VB3

RBS3 VS3 W (20)

(7) HIN(U) HIN1 LO1


(8) HIN(V) HIN2
NU (19)
(9) HIN(W) HIN3
(10) LIN(U) LIN1
(11) LIN(V) LIN2 LO2

(12) LIN(W) LIN3


NV (18)
(13) VDD VDD
(14) VFO VFO
LO3
(15) ITRIP ITRIP
(16) VSS VSS NW (17)
Thermistor

Figure 2 Internal schematic

Datasheet 4 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

Pin Assignment
Pin Number Pin Name Pin Description
1 VS(U) U-phase high side floating IC supply offset voltage
2 VB(U) U-phase high side floating IC supply voltage
3 VS(V) V-phase high side floating IC supply offset voltage
4 VB(V) V-phase high side floating IC supply voltage
5 VS(W) W-phase high side floating IC supply offset voltage
6 VB(W) W-phase high side floating IC supply voltage
7 HIN(U) U-phase high side gate driver input
8 HIN(V) V-phase high side gate driver input
9 HIN(W) W-phase high side gate driver input
10 LIN(U) U-phase low side gate driver input
11 LIN(V) V-phase low side gate driver input
12 LIN(W) W-phase low side gate driver input
13 VDD Low side control supply
14 VFO Fault output / Temperature monitor
15 ITRIP Over current shutdown input
16 VSS Low side control negative supply
17 NW W-phase low side emitter
18 NV V-phase low side emitter
19 NU U-phase low side emitter
20 W Motor W-phase output
21 V Motor V-phase output
22 U Motor U-phase output
23 P Positive bus input voltage
24 NC No Connection

Pin Description
HIN(U, V, W) and LIN(U, V, W) (Low side and high
side control pins, Pin 7 - 12)
These pins are positive logic and they are CIPOSTM
responsible for the control of the integrated IGBT. Schmitt-Trigger

The Schmitt-trigger input thresholds of them are HINx


LINx
INPUT NOISE
FILTER
such to guarantee LSTTL and CMOS compatibility  5k UZ=10.5V
SWITCH LEVEL
VSS
down to 3.3V controller outputs. Pull-down resistor VIH; VIL

of about 5k is internally provided to pre-bias Figure 3 Input pin structure


inputs during supply start-up and a zener clamp is
provided for pin protection purposes. Input a) tFILIN b) tFILIN
Schmitt-trigger and noise filter provide beneficial
HIN HIN
noise rejection to short input pulses. LIN LIN

high
The noise filter suppresses control pulses which are HO HO
low
below the filter time tFILIN. The filter acts according LO LO

to Figure 4. Figure 4 Input filter timing diagram


Datasheet 5 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

It is not recommended for proper work to provide VDD, VSS (Low side control supply and reference,
input pulse-width lower than 1µs. Pin 13, 16)
The integrated gate drive provides additionally a VDD is the control supply and it provides power
shoot through prevention capability which avoids both to input logic and to output power stage.
the simultaneous on-state of two gate drivers of the Input logic is referenced to VSS ground.
same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and
The under-voltage circuit enables the device to
LO3). When two inputs of a same leg are activated,
operate at power on when a supply voltage of at
only former activated one is activated so that the
least a typical voltage of VDDUV+ = 12.1V is present.
leg is kept steadily in a safe state.
The IC shuts down all the gate drivers power
A minimum deadtime insertion of typically 380ns is
outputs, when the VDD supply voltage is below
also provided by driver IC, in order to reduce cross-
VDDUV- = 10.4V. This prevents the external power
conduction of the external power switches.
switches from critically low gate voltage levels
VFO (Fault-output and NTC, Pin 14) during on-state and therefore from excessive power
dissipation.
The VFO pin indicates a module failure in case of
under voltage at pin VDD or in case of triggered VB(U, V, W) and VS(U, V, W) (High side supplies, Pin
over current detection at ITRIP. A pull-up resistor is 1 - 6)
externally required.
VB to VS is the high side supply voltage. The high
CIPOS TM side circuit can float with respect to VSS following
VDD
the external high side power device emitter voltage.
RON,FLT From ITRIP - Latch
VFO
1
Due to the low power consumption, the floating
VSS From UV detection
driver stage is supplied by integrated bootstrap
Thermistor circuit.
Figure 5 Internal circuit at pin VFO The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 12.1V and a
The same pin provides direct access to the NTC,
falling threshold of VBSUV- = 10.4V.
which is referenced to VSS. An external pull-up
resistor connected to +5V ensures that the resulting VS(U, V, W) provide a high robustness against
voltage can be directly connected to the negative voltage in respect of VSS of -50V
microcontroller. transiently. This ensures very stable designs even
under rough conditions.
ITRIP (Over current detection function, Pin 15)
NW, NV, NU (Low side emitter, Pin 17 - 19)
CIPOS™ provides an over current detection
The low side emitters are available for current
function by connecting the ITRIP input with the
measurements of each phase leg. It is
IGBT collector current feedback. The ITRIP
recommended to keep the connection to pin VSS as
comparator threshold (typ. 0.47V) is referenced to
short as possible in order to avoid unnecessary
VSS ground. An input noise filter (typ.: tITRIPMIN =
inductive voltage drops.
530ns) prevents the driver to detect false over-
current events. W, V, U (High side emitter and low side collector,
Pin 20 - 22)
Over current detection generates a shutdown of all
outputs of the gate driver after the shutdown These pins are motor U, V, W input pins.
propagation delay of typically 1000ns. P (Positive bus input voltage, Pin 23)
The fault-clear time is set to minimum 40µs. The high side IGBTs are connected to the bus
voltage. It is noted that the bus voltage does not
exceed 450V.

Datasheet 6 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

Absolute Maximum Ratings


(VDD = 15V and TJ = 25°C, if not stated otherwise)

Module Section
Value
Description Condition Symbol Unit
min max
Storage temperature range Tstg -40 125 °C
Isolation test voltage RMS, f = 60Hz, t = 1min VISOL 2000 - V
Operating case temperature range Refer to Figure 6 TC -40 125 °C

Inverter Section
Value
Description Condition Symbol Unit
min max
Max. blocking voltage IC = 250µA VCES 600 - V
DC link supply voltage of P-N Applied between P-N VPN - 450 V
DC link supply voltage (surge) of P-N Applied between P-N VPN(surge) - 500 V
TC = 25°C, TJ < 150°C -15 15
Output current IC A
TC = 80°C, TJ < 150°C -10 10
Maximum peak output current less than 1ms IC(peak) -30 30 A
Short circuit withstand time1 VDC ≤ 400V, TJ = 150°C tSC - 5 µs
Power dissipation per IGBT Ptot - 29.0 W
Operating junction temperature range TJ -40 150 °C
Single IGBT thermal resistance,
RthJC - 4.31 K/W
junction-case

Control Section
Value
Description Condition Symbol Unit
min max
Module supply voltage VDD -1 20 V
High side floating supply voltage
VBS -1 20 V
(VB vs. VS)
VIN -1 10
Input voltage LIN, HIN, ITRIP V
VITRIP -1 10
Switching frequency fPWM - 20 kHz

1
Allowed number of short circuits: <1000; time between short circuits: >1s.
Datasheet 7 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

Recommended Operation Conditions


All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Value
Description Symbol Unit
min typ max
DC link supply voltage of P-N VPN 0 - 400 V
High side floating supply voltage (VB vs. VS) VBS 13.5 - 18.5 V
Low side supply voltage VDD 14.0 16 18.5 V
ΔVBS, -1 - 1
Control supply variation V/µs
ΔVDD -1 - 1
VIN 0 - 5
Logic input voltages LIN, HIN, ITRIP V
VITRIP 0 - 5
Between VSS - N (including surge) VSS -5 - 5 V

Figure 6 TC measurement point1

1
Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and
brings wrong or different information.
Datasheet 8 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

Static Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Value
Description Condition Symbol Unit
min typ max
IC = 10A
Collector-Emitter saturation voltage TJ = 25°C VCE(sat) - 1.6 2.0 V
150°C - 1.8 -

IF = 10A
Emitter-Collector forward voltage TJ = 25°C VF - 1.75 2.2 V
150°C - 1.8 -

Collector-Emitter leakage current VCE = 600V ICES - - 1 mA

Logic "1" input voltage (LIN, HIN) VIH - 2.1 2.5 V

Logic "0" input voltage (LIN, HIN) VIL 0.7 0.9 - V

ITRIP positive going threshold VIT,TH+ 400 470 540 mV

ITRIP input hysteresis VIT,HYS 40 70 - mV

VDD and VBS supply under voltage VDDUV+


10.8 12.1 13.0 V
positive going threshold VBSUV+

VDD and VBS supply under voltage VDDUV-


9.5 10.4 11.2 V
negative going threshold VBSUV-

VDD and VBS supply under voltage VDDUVH


1.0 1.7 - V
lockout hysteresis VBSUVH

Input clamp voltage (HIN, LIN, ITRIP) Iin=4mA VINCLAMP 9.0 10.1 12.5 V

Quiescent VBx supply current


HIN = 0V IQBS - 300 500 µA
(VBx only)

Quiescent VDD supply current


LIN = 0V, HINX = 5V IQDD - 370 900 µA
(VDD only)

Input bias current VIN = 5V IIN+ - 1 1.5 mA

Input bias current VIN = 0V IIN- - 2 - µA

ITRIP input bias current VITRIP = 5V IITRIP+ - 65 150 µA

VFO input bias current VFO = 5V, VITRIP = 0V IFO - 60 - µA

VFO output voltage IFO = 10mA, VITRIP = 1V VFO - 0.5 - V

Datasheet 9 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

Dynamic Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Value
Description Condition Symbol Unit
min typ max
Turn-on propagation delay time ton - 630 - ns
VLIN, HIN = 5V,
Turn-on rise time tr - 30 - ns
IC = 10A,
Turn-on switching time tc(on) - 120 - ns
VDC = 300V
Reverse recovery time trr - 180 - ns
Turn-off propagation delay time VLIN, HIN = 0V, toff - 900 - ns
Turn-off fall time IC = 10A, tf - 150 - ns
Turn-off switching time VDC = 300V tc(off) - 210 - ns
Short circuit propagation delay time From VIT,TH+ to 10% ISC tSCP - 1450 - ns
Input filter time ITRIP VITRIP = 1V tITRIPmin - 530 - ns
Input filter time at LIN, HIN for turn
VLIN, HIN = 0V & 5V tFILIN - 290 - ns
on and off
Fault clear time after ITRIP-fault VITRIP = 1V tFLTCLR 40 65 200 µs
Deadtime between low side and high
DTPWM 1.5 - - µs
side
Deadtime of gate drive circuit DTIC - 380 - ns
VDC = 300V, IC = 10A
IGBT turn-on energy (includes reverse
TJ = 25°C Eon - 230 - µJ
recovery of diode)
150°C - 340 -
VDC = 300V, IC = 10A
IGBT turn-off energy TJ = 25°C Eoff - 295 - µJ
150°C - 455 -
VDC = 300V, IC = 10A
Diode recovery energy TJ = 25°C Erec - 70 - µJ
150°C - 145 -

Bootstrap Parameters
(TJ = 25°C, if not stated otherwise)
Value
Description Condition Symbol Unit
min typ max
Repetitive peak reverse voltage VRRM 600 - - V
VS2 or VS3 = 300V, TJ = 25°C 35
Bootstrap diode resistance of VS2 and VS3 = 0V, TJ = 25°C 40
RBS1 - - Ω
U-phase1 VS2 or VS3 = 300V, TJ = 125°C 50
VS2 and VS3 = 0V, TJ = 125°C 65
Reverse recovery time IF = 0.6A, di/dt = 80A/µs trr_BS - 50 - ns
Forward voltage drop IF = 20mA, VS2 and VS3 = 0V VF_BS - 2.6 - V

1
RBS2 and RBS3 have same values to RBS1.
Datasheet 10 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

Thermistor
Value
Description Condition Symbol Unit
min typ max
Resistor TNTC = 25°C RNTC - 85 - k
B-constant of NTC
B(25/100) - 4092 - K
(Negative Temperature Coefficient)

3500
35
Thermistor resistance [kΩ ]

3000 Min.
30
Typ.
Thermistor resistance [kΩ ]

Max.
25
2500
20

2000 15

10

1500
5

0
1000 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
Thermistor temperature [℃]

500

0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor temperature [℃]
Figure 7 Thermistor resistance – temperature curve and table
(For more information, please refer to the application note ‘AN2016-10 CIPOS Mini Technical description’)

Mechanical Characteristics and Ratings


Value
Description Condition Unit
min typ max
Mounting torque M3 screw and washer 0.59 0.69 0.78 Nm
Flatness Refer to Figure 8 -50 - 100 µm
Weight - 6.15 - g

+
-

- +

Figure 8 Flatness measurement position


Datasheet 11 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

Circuit of a Typical Application


NC (24)

P (23)
(1) VS(U)

(2) VB(U)
VB1 HO1

RBS1 U (22)
VS1

(3) VS(V)

#4
(4) VB(V)
VB2 HO2

RBS2 V (21)
VS2 3-ph AC
Motor
(5) VS(W)

(6) VB(W) HO3


VB3

W (20)
RBS3 VS3

#1 #5
(7) HIN(U)
HIN1
LO1
(8) HIN(V)
HIN2

(9) HIN(W) NU (19)


HIN3
(10) LIN(U)
LIN1

(11) LIN(V)
Micro LIN2
LO2 #7
(12) LIN(W) #6
Controller LIN3
NV (18)

VDD line
(13) VDD
VDD Power
(14) VFO
GND line
VFO

(15) ITRIP LO3


ITRIP

GND line
Control
5 or 3.3V line (16) VSS VSS NW (17)

Thermistor

#3
U-phase current sensing
Temperature monitor
#2 V-phase current sensing
W-phase current sensing
<Signal for protection>
<Signal for protection>

Figure 9 Typical application circuit

1. Input circuit
- To reduce input signal noise by high speed switching, the RIN and CIN filter circuit should be mounted. (100Ω, 1nF)
- CIN should be placed as close to VSS pin as possible.
2. Itrip circuit
- To prevent protection function errors, CITRIP should be placed as close to Itrip and VSS pins as possible.
3. VFO circuit
- VFO output is an open drain output. This signal line should be pulled up to the positive side of the 5V/3.3V logic
power supply with a proper resistor RPU.
- It is recommended that RC filter be placed as close to the controller as possible.
4. VB-VS circuit
- Capacitor for high side floating supply voltage should be placed as close to VB and VS pins as possible.
5. Snubber capacitor

- The wiring between CIPOS™ Mini and snubber capacitor including shunt resistor should be as short as possible.

6. Shunt resistor
- The shunt resistor of SMD type should be used for reducing its stray inductance.
7. Ground pattern
- Ground pattern should be separated at only one point of shunt resistor as short as possible.

Datasheet 12 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

Switching Times Definition

HINx 2.1V
LINx
0.9V
trr
toff ton
10%
iCx
90% 90%

tf tr
10% 10%
10% 10%
vCEx
tc(off) tc(on)

Figure 10 Switching times definition

Datasheet 13 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

Electrical characteristic
30 30 30
28 TJ=25℃ 28 VDD=15V 28
26
Ic, Collector - Emitter current [A]

26 26

Ic, Collector - Emitter current [A]

IF, Emitter - Collector current [A]


24 24 24
22 22 22
20 20 20
18 18 18
16 16 16
14 14 14
12 VDD=13V 12 12
10 VDD=15V 10 10
8 VDD=20V 8 TJ=25℃ 8 TJ=25℃
6 6 TJ=150℃ 6 TJ=150℃
4 4 4
2 2 2
0 0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCE(sat), Collector - Emitter voltage [V] VCE(sat), Collector - Emitter voltage [V] VF, Emitter - Collector voltage [V]
Typ. Collector – Emitter saturation voltage Typ. Collector – Emitter saturation voltage Typ. Emitter – Collector forward voltage

1.2 360
2.6
Eoff, Turn off switching energy loss [mJ]
Eon, Turn on switching energy loss [mJ]

Erec, Reverse recovery energy loss [uJ]


VDC=300V VDC=300V
1.1 High side @TJ=25℃ 330
2.4 VDD=15V VDD=15V
1.0
High side @TJ=150℃ 300
2.2 High side @TJ=25℃
Low side @TJ=25℃
2.0 0.9 270 High side @TJ=150℃
Low side @TJ=150℃
High side @TJ=25℃
1.8 0.8 240 Low side @TJ=25℃
High side @TJ=150℃
1.6 0.7 210 Low side @TJ=150℃
Low side @TJ=25℃
1.4
Low side @TJ=150℃ 0.6 180
1.2
0.5 150
1.0
0.4 120
0.8
0.3 90
0.6
0.2 60
0.4
0.1 VDC=300V 30
0.2
VDD=15V
0.0 0.0 0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Ic, Collector current [A] Ic, Collector current [A] Ic, Collector current [A]

Typ. Turn on switching energy loss Typ. Turn off switching energy loss Typ. Reverse recovery energy loss

900 600 2000


toff, Turn off propagation delay time [ns]
ton, Turn on propagation delay time [ns]

VDC=300V VDC=300V VDC=300V


550 1900
tc(on), Turn on switching time [ns]

VDD=15V VDD=15V VDD=15V


850
500 1800

800 High side @TJ=25℃ 450 High side @TJ=25℃ 1700

High side @TJ=150℃ High side @TJ=150℃ 1600


400 High side @TJ=25℃
750
Low side @TJ=25℃ Low side @TJ=25℃ 1500
350 High side @TJ=150℃
Low side @TJ=150℃ Low side @TJ=150℃
1400 Low side @TJ=25℃
700 300
1300 Low side @TJ=150℃
250
650 1200
200
1100
600 150
1000
100 900
550
50 800

500 0 700
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Ic, Collector current [A] Ic, Collector current [A] Ic, Collector current [A]

Typ. Turn on propagation delay time Typ. Turn on switching time Typ. Turn off propagation delay time

1100 700 10
VDC=300V
650
tc(off), Turn off switching time [ns]

VDC=300V
ZthJC, transient thermal resistance [K/W]

1000 VDD=15V
VDD=15V 600
trr, Reverse recovery time [ns]

900 High side @TJ=25℃ 1


550
High side @TJ=150℃
800 500
Low side @TJ=25℃
High side @TJ=25℃ 450 Low side @TJ=150℃ 0.1
700
High side @TJ=150℃ 400
D : duty ratio
600 Low side @TJ=25℃ D=50%
350 D=20%
Low side @TJ=150℃ 0.01
500 300 D=10%
D=5%
400 250
D=2%
200 Single pulse
300 1E-3
150
200
100

100 50 1E-4
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 1E-7 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100
Ic, Collector current [A] Ic, Collector current [A] tP, Pulse width [sec.]

Typ. Turn off switching time Typ. Reverse recovery time IGBT transient thermal resistance at all
six IGBTs operation

Datasheet 14 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

Package Outline

Datasheet 15 of 17 V 2.91
2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM15F60GA

Revision history

Document Date of release Description of changes


version
Maximum operating case temperature, Tc= 125°C
V 2.91 Sep. 2017
Package outline update

Datasheet 16 of 17 V 2.91
2017-09-06
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