Analog Power AM4410N

N-Channel 30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a
PRODUCT SUMMARY
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m(Ω) ID (A)
dissipation. Typical applications are DC-DC 13.5 @ VGS = 10V 13
converters and power management in portable and 30
battery-powered products such as computers, 20 @ VGS = 4.5V 11
printers, PCMCIA cards, cellular and cordless
telephones.

• Low rDS(on) provides higher efficiency and

1 8
extends battery life
2 7
• Low thermal impedance copper leadframe
SOIC-8 saves board space 3 6

• Fast switching speed 4 5

• High performance trench technology

o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ±20
o
a TA=25 C ±13
Continuous Drain Current o
ID
TA=70 C ±11 A
b
Pulsed Drain Current IDM ±50
a
Continuous Source Current (Diode Conduction) IS 2.3 A
o
a TA=25 C 3.1
Power Dissipation o
PD W
TA=70 C 2.2
o
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C

THERMAL RESISTANCE RATINGS

Parameter Symbol Maximum Units
a o
Maximum Junction-to-Case t <= 5 sec RθJC 25 C/W
a o
Maximum Junction-to-Ambient t <= 5 sec RθJA 50 C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature

1 Publication Order Number:

PRELIMINARY DS-AM4410_F
Analog Power AM4410N

SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)

Limits
Parameter Symbol Test Conditions Unit
Min Typ Max
Static
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V ±100 nA
VDS = 24 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS uA
VDS = 24 V, VGS = 0 V, TJ = 55oC 25
On-State Drain CurrentA ID(on) VDS = 5 V, VGS = 10 V 20 A
A VGS = 10 V, ID = 10 A 13.5
Drain-Source On-Resistance rDS(on) mΩ
VGS = 4.5 V, ID = 8 A 20
Forward TranconductanceA gfs VDS = 15 V, ID = 10 A 40 S
Diode Forward Voltage VSD IS = 2.3 A, VGS = 0 V 0.7 V
b
Dynamic
Total Gate Charge Qg 12.5
VDS = 15 V, VGS = 4.5 V,
Gate-Source Charge Qgs 2.6 nC
ID = 10 A
Gate-Drain Charge Qgd 4.6
Input Capacitance Ciss 1191
VDS = 15 V, VGS = 0 V,
Output Capacitance Coss 412 pF
f = 1MHz
Reverse Transfer Capacitance Crss 160
Turn-On Delay Time td(on) 20
Rise Time tr VDD = 25 V, RL = 25 Ω , ID = 1 A, 9
nS
Turn-Off Delay Time td(off) VGEN = 10 V 70
Fall-Time tf 20

Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.

Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.

2 Publication Order Number:

PRELIMINARY DS-AM4410_F
Analog Power AM4410N

Typical Electrical Characteristics (N-Channel)

50 2

DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
ID, DRAIN CURRENT (A)

6.0V
40

RDS(ON), NORMALIZED
1.7
4.0V
30
1.4
4.5V
20 6.0V
1.1
3.0V
10 10V
0.8
0
0 0.5 1 1.5 2 0.5
VDS, DRAIN-SOURCE VOLTAGE (V) 0 10 20 30 40 50

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. On-Resistance with Drain Current

1.6

VGS = 10V 0.05

1.4 I D = 10A ID = 10A
Normalized RDS(on)

0.04
RDS(ON), ON-Resistance

1.2
0.03
(OHM )

1.0
0.02
o
T A = 25 C
0 .8
0.01

0 .6
-50 -2 5 0 25 50 75 10 0 12 5 150
0
T J Juncat ion T emperature (C) 2 4 6 8 10
VGS, Gate To Source Voltage (V)

Figure 3. On-Resistance Variation with Temperature

Figure 4. On-Resistance Variation with
Gate to Source Voltage
60
100
VD=5V -55C
VGS = 0V
50
IS, REVERSE DRAIN CURRENT (A)

10
I D Drain Current (A)

25C
40 TA = 125 C
o
1

30
125C 0.1 o
25 C
20
0.01
10
0.001
0
0 1 2 3 4 5 6 0.0001
VGS Ga te to S o urc e Vo lta ge (V) 0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature

3 Publication Order Number:

PRELIMINARY DS-AM4410_F
Analog Power AM4410N

Typical Electrical Characteristics (N-Channel)

10
1600
f = 1MHz
8 VGS = 0 V
Ciss

CAPACITANCE (pF)
1200
Vgs Voltage ( V )

800
4
Coss

400
2
Crss

0 0
0 4 8 12 16 20 24 28
0 5 10 15 20 25 30
Qg, Gate Charge (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

50
2.4
Vth, Gate-Source Thresthold Voltage

VDS = VGS SINGLE PULSE

2.2
P(pk), Peak Transient Power (W) RqJA = 125C/W
ID = 250mA 40 TA = 25C
2

1.8 30
(V)

1.6
20
1.4

1.2
10
1
-50 -25 0 25 50 75 100 125 150 175
0
o
TA, AMBIENT TEMPERATURE ( C) 0.001 0.01 0.1 1 10 100

t1, TIME (sec)

Figure 9. Threshold Vs Ambient Temperature Figure 10. Single Pulse Maximum Power Dissipation

Normalized Thermal Transient Junction to Ambient

1
D = 0.5

0.2 RqJA(t) = r(t) * RqJA

0.1 RqJA = 125 C/W
0.1 0.05
P(pk)
0.02
t1
0.01
t2
0.01

SINGLE PULSE TJ - TA = P * RqJA(t)

Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve

4 Publication Order Number:

PRELIMINARY DS-AM4410_F
Analog Power AM4410N

Package Information
SO-8: 8LEAD

H x 45°

5 Publication Order Number:

PRELIMINARY DS-AM4410_F