You are on page 1of 3

Tutor-marked Assignment 1 (TMA 1 – 25%)

Submission Date: 8th September 2019, 00:00 hrs.

Evidence of plagiarism or collusion will be taken seriously and the


University regulations will be applied fully. You are advised to be familiar
with the University’s definitions of plagiarism and collusion.

Instructions:
1. This is an individual assignment. No duplication of work will be
tolerated. Any plagiarism or collusion may result in disciplinary action,
in addition to ZERO mark being awarded to all involved.
2. You are to submit online of your answers in OAS system and it
is your responsibility to submit your TMA correctly and timely. OAS
system doesn’t allow re-submission of assignment. Marks will be
awarded for correct working steps and answer.
3. The total marks for TMA 1 is 100 and contributes 25% towards the total
grade.
4. TMA 1 covers the topics in Units 1 & 2.
5. TMA 1 has to be done individually.
6. Your assignment must be word processed (single spacing) and clearly
laid out. Any additional appendices or attachments must be placed at
the end of the submitted document and must be referred to in the main
body of the assignment, or it will not be read by the marker.
7. All files or documents submitted must be labeled with your WOU ID
and name.
8. Answer all parts in English.
9. Students are highly encouraged to passage their TMAs to the
Turnitin system before submission, to encourage honest academic writing
and it is not mandatory except for Project courses.
Important Notice:
This TMA is designed to test your understanding on semiconductor device physics and
the basic operation of a MOSFET and some basic principles of Microelectronics systems.
Students are expected to do their own research and independent reading to answer all
TMA questions, especially the theoretical ones. You can refer to your course material of
TEE314/05 Microelectronics and also the course material of TEL204/05 Semiconductor
Devices Physics (which is the advisory pre-requisite of this course). You may also refer
to the reference books in the library and also online materials. Tutors will be available to
give you advice but they may not provide you with the answers. You are expected to find
the answers yourself and complete your TMA independently. You may discuss the
questions with your friends, but you may not present the answers in the similar way. Any
answers that look identical will be considered as plagirism and penalty will be imposed
on all individuals involved.

Question 1 (20 marks)

I. Name two contributors of sub-threshold current of a MOSFET. (4 marks)

II. State the reason why a narrow width MOSFET has a higher threshold voltage as
compared with a non-narrow width MOSFET. (4 marks)

III. State the two main applications of SiGe Heterojunction Bipolar Transistors (HBT)
and explain briefly why they are commonly used in BiCMOS integrated circuits.
(4 marks)

IV. The figure below shows a cross section of a short-channel MOS transistor. Given
that L = 0.4m, L’ = 0.3m, Cox = 80nF/cm2, NA = 2.0x1016cm-3, and xdep = 0.23m,
calculate the change in threshold voltage due to short channel effect.
(8 marks)
Question 2 (20 marks)

I. List down the components that determine the cost of an integrated circuit and
briefly explain each of them. (5 marks)

II. A wafer has 8 inch diameter. Area of die is 2.0cm 2 and is fabricated with 1
defects/cm2, and  = 3.

a. Determine the die per wafer and die yield of this wafer. (8 marks)

b. If the cost of each wafer is RM5000, calculate the cost of each die.
(3 marks)

III. Briefly explain how defects occur in an integrated circuit. (4 marks)

Question 3 (20 marks)

Explain with the aid of diagrams and equations, how velocity saturation, which is one of
the problems caused by short channel effect affect the performance of a submicron
channel device.

Question 4 (40 marks)

What are the important issues to consider when designing a submicron channel
MOSFET?

Note: Though both Q3 and Q4 may look like open-ended questions, but there are specific
answers to those questions. Your job is to explore the theoretical aspects of those issues
and decide how you want to present your answers. Your answers should contain
diagrams and equations. There are no limits to how much contents you may include in
your answers but you are expected to include only the relevant info. Marks will be
awarded based on the validity of your answers, the completeness and conciseness of
your answers and the way you present your arguments.