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Indium gallium phosphide

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Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is
a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-
frequency electronics because of its superior electron velocity with respect to the more common
semiconductors silicon and gallium arsenide.
It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar
cells used for space applications and, in combination with aluminium (AlGaInP alloy) to make high
brightness LEDs with orange-red, orange, yellow, and green colors. Some semiconductor devices
such as EFluor Nanocrystal use InGaP as their core particle.
Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide.
Ga0.5In0.5P is a solid solution of special importance, which is almost lattice matched to GaAs. This
allows, in combination with (AlxGa1−x)0.5In0.5, the growth of lattice matched quantum wells for red
emitting semiconductor lasers,
e.g. red emitting (650nm) RCLEDs or VCSELs for PMMA plastic optical fibers.
Ga0.5In0.5P is used as the high energy junction on double and triple junction photovoltaic cells grown
on GaAs. Recent years have shown GaInP/GaAs tandem solar cells with AM0 (sunlight incidence in
space=1.35 kW/m2) efficiencies in excess of 25%.[1]
A different composition of GaInP, lattice matched to the underlying GaInAs, is utilized as the high
energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells.
Growth of GaInP by epitaxy can be complicated by the tendency of GaInP to grow as an ordered
material, rather than a truly random solid solution (i.e., a mixture). This changes the bandgap and
the electronic and optical properties of the material.

See also[edit]
 Gallium phosphide
 Indium(III) phosphide
 Indium gallium nitride
 Indium gallium arsenide
 GaInP/GaAs solar cell