ZRAM-Zero Capacitor RAM: Jennis Thomas Roll No:EPAHECS025 S7 Computer Science and Engineering

Introduction Types of RAM Z-RAM Operating principles Fabrication Techniques Comparison Merits Demerits Latest Develop
ZRAM-Zero capacitor RAM
Jennis Thomas
Roll No:EPAHECS025
S7 Computer Science and Engineering
Government Engineering College

Sreekrishnapuram Palakkad
November 18, 2010

OVERVIEW
Introduction
Types of RAM
Z-RAM
Operating principles
Fabrication Techniques
Comparison
Merits
Demerits
Latest Developments
Conclusion
References
OVERVIEW
Introduction
Types of RAM
Z-RAM
Comparison
Merits
Demerits
Latest Developments
Conclusion
References
Introduction
OVERVIEW
Introduction
Types of RAM
Z-RAM
Comparison
Merits
Demerits
Latest Developments
Conclusion
References
Types of RAM
SRAM
• Stores bits in memory cells composed of flip flops
• Each cell which can store a single bit requires 6 transistors
• Does not need to be refreshed periodically as flip flop retains

the data
• Faster access time compared to DRAM, therefore used as

caches mostly
SRAM structure
DRAM
• More costly in terms of cost per bits compared to SRAM due

to low chip density
• Each cell requires a capacitor (which stores a bit charge) and

a transistor
• Needs to be refreshed every milliseconds to retain data

because the charge of the capacitor leaks.
A typical DRAM cell

OVERVIEW
Introduction
Types of RAM
Z-RAM
Comparison
Merits
Demerits
Latest Developments
Conclusion
References
Z-RAM
• Its a hybrid RAM having the qualities of SRAM combined

with the chip density of DRAM
• It uses a transistor (same as DRAM) but does not need a
capacitor to store charge
• Its the cheapest RAM as it uses just a transistor and no
additional circuitry
• Its fabrication is easier
Z-RAM
Structure of ZRAM
OVERVIEW
Introduction
Types of RAM
Z-RAM
Comparison
Merits
Demerits
Latest Developments
Conclusion
References
Writing a ’1’to ZRAM
• Passing a current through the channel builds up excess

positive charges in the transistor
• Decreases the threshold voltage and the current flowing
through the channel this is called Impact Ionization.
Writing a ’0’to ZRAM
• Applying a bias to transistor channel removes the holes

through the junction, writing binary 0. This is reffered to as
Hole Removal
Reading from a Z-RAM
• Reading a Z-RAM bit cell is similar to reading any DRAM

cell. The chip applies a small pulse to the cell’s transistor and
uses a sense amplifier to compare the resulting current flow
with the current in a reference cell.
Operating Principles
• The memory technology uses the technique of impact

ionzation for writing ’1’
• It uses the technique of forward biasing body/drain junction
to write ’0’ state known as hole removal.
• During write operation the transistor is in ON state
• Power consumption is more
• Writing mechanism provides memory windows of 5 to
10uA/um
• Alternate writing mechanism is low power operation and
larger memory windows of the range 40uA/um
Transistor ON
• The above fig shows the current flowing through a cell with a
standard write/read operations
• Writing a ’1’ or ’0’ state consumes 50uA/um
• A memory window of 10uA/um is typically obtained
Transistor OFF
• To write ’1’ while keeping the transistor in it’s OFF state we

can use band to band tunneling
• By applying a negative gate and a positive drain voltage holes
are created in the floating body and state ’1’ is generated
• To write a ’0’ state a combination of negative gate and drain
voltages can be used.
• In the OFF state no current flows through the cell
• A large memory window of 40uA/um is obtained.
OVERVIEW
Introduction
Types of RAM
Z-RAM
Comparison
Merits
Demerits
Latest Developments
Conclusion
References
• Silicon on insulator technology (SOI) refers to the use of a

layered silicon-insulator-silicon substrate in place of
conventional silicon substrates in semiconductor
manufacturing
• speeds up the circuit by 30%
• As transistors shrink there is increase in leakage current,the
insulator blocks this leakage current.
• System-on-a-chip or system on chip (SoC or SOC) refers to
integrating all components of a computer or other electronic
system into a single integrated circuit (chip)
OVERVIEW
Introduction
Types of RAM
Z-RAM
Comparison
Merits
Demerits
Latest Developments
Conclusion
References
Comparison of different RAMS

OVERVIEW
Introduction
Types of RAM
Z-RAM
Comparison
Merits
Demerits
Latest Developments
Conclusion
References
Merits
• ZRAM read/write performance is far better than conventional

DRAM
• ZRAM is twice as dense as conventional DRAM and about 5
times denser than SRAM
• Its fabrication is quite simple
• Soft Error Rate is comparatively lower in ZRAM.
• Lower power consumption
• Lithography friendly
OVERVIEW
Introduction
Types of RAM
Z-RAM
Comparison
Merits
Demerits
Latest Developments
Conclusion
References
Demerits
• It isn’t fast enough to replace SRAM in L1 cache
• SOI substrate is costlier to be implemented
• Requires a large investment in new fabrication
• Same latency as DRAM. Latency is the delay incurred when a

sysytem tries to access data from memory
• Z-RAM is still a volatile memory

OVERVIEW
Introduction
Types of RAM
Z-RAM
Comparison
Merits
Demerits
Latest Developments
Conclusion
References
Latest Developments
Latest Developments
• Hynix Semiconductors redesigned ZRAM so that it can be

built on the same kind of wafer used for DRAM
• Previous devices required expensive speciality SOI wafers
which drove up the cost
• In the new design, the transistors are aligned vertically so that
the gates are on either side and the junctions are at top and
bottom
• This provides the same isolation and same floating body effect
Advantages of New Design
• This design resulted in operating voltages of 0.5V which is

50-75% lower than any other floating body memory device
• It makes the device compatible with existing power supplies
• This makes ZRAM the cheapest RAM
OVERVIEW
Introduction
Types of RAM
Z-RAM
Comparison
Merits
Demerits
Latest Developments
Conclusion
References
Conclusion
• In today’s world, where progress is being made at planetary

velocities in all spheres, ZRAM is a low cost and high
performance memory technology. It can even replace SRAMs
in certain applications such as high density cache memories
for microprocessors, game processors and high performance
SOCs in general. Intel and Toshiba are pursuing floating body
memories. Hynix Semiconductors expects to make samples for
testing in commercial devices within two years
OVERVIEW
Introduction
Types of RAM
Z-RAM
Comparison
Merits
Demerits
Latest Developments
Conclusion
References
References
• Z-RAM takes on DRAM,pg.14,IEEE Spectrum,July,2010

• Winner: Masters of Memory,IEEE Spectrum,January,2007
• Z-RAM to take on DRAM with Hynix Deal,IEEE Spectrum
• International SOI Conference,2006 IEEE, issue date 2-5 Oct.
2006,pg.111-112

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Introduction Types of RAM Z-RAM Operating principles Fabrication Techniques Comparison Merits Demerits Latest Develop

ZRAM-Zero capacitor RAM

Government Engineering College

November 18, 2010

• Stores bits in memory cells composed of flip flops

• Each cell which can store a single bit requires 6 transistors

• Does not need to be refreshed periodically as flip flop retains

• Faster access time compared to DRAM, therefore used as

• More costly in terms of cost per bits compared to SRAM due

• Each cell requires a capacitor (which stores a bit charge) and

• Needs to be refreshed every milliseconds to retain data

A typical DRAM cell

• Its a hybrid RAM having the qualities of SRAM combined

Writing a ’1’to ZRAM

• Passing a current through the channel builds up excess

Writing a ’0’to ZRAM

• Applying a bias to transistor channel removes the holes

Reading from a Z-RAM

• Reading a Z-RAM bit cell is similar to reading any DRAM

• The memory technology uses the technique of impact

• To write ’1’ while keeping the transistor in it’s OFF state we

• Silicon on insulator technology (SOI) refers to the use of a

Comparison of different RAMS

• ZRAM read/write performance is far better than conventional

• It isn’t fast enough to replace SRAM in L1 cache

• SOI substrate is costlier to be implemented

• Requires a large investment in new fabrication

• Same latency as DRAM. Latency is the delay incurred when a

• Z-RAM is still a volatile memory

• Hynix Semiconductors redesigned ZRAM so that it can be

Advantages of New Design

• This design resulted in operating voltages of 0.5V which is

• In today’s world, where progress is being made at planetary

• Z-RAM takes on DRAM,pg.14,IEEE Spectrum,July,2010

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