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Rates,
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350-400oC rate, low coverage, undoped
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Reactant vapors Normal Normal Required Remarks
process deposition energy
temperature rate supply
(oC) ( m/min) (eV)
Silane (SiH4) 1000 0.1 – 0.5 1.6 – 1.7 No pattern shift
Dichlorosilane (SiH2Cl2) 1100 0.1 – 0.8 0.3 – 0.6 Some pattern shift
Trichlorosilane (SiHCl3) 1175 0.2 – 0.8 0.8 – 1.0 Large pattern shift
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Sidewall protection materials Selectivity ratio Aspect ratio, A/P
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Photoresists 50:1 100:1
Silicon dioxide 120:1 200:1
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Directionality Good for most materials Only with single crystal materials
(aspect ratio up to 100)
Production-automation Good Poor
Environmental impact Low High
Masking film adherence Not as critical Very critical
Selectivity Poor Very good
Materials to be etched Only certain materials All
Process scale up Difficult Easy
Cleanliness Conditionally clean Good to very good
Critical dimensional control Very good (< 0.1 m) Poor
Equipment cost Expensive Less expensive
Typical etch rate Slow (0.1 m/min) to fast (6 Fast ( 1 m/min and up)
m/min)
Operational parameters Many Few
Control of etch rate Good in case of slow etch Difficult
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Sacrificial
A Silicon constraint base Layer Ɣ 'HSRVLW D VDFULILFLDO OD\HU RI 36* 3KRVSKRVLOLFDWH
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Thin Oxide Films Lateral Etch Rate ( m/min)
CVD SiO2 (densified at 1050oC for 30 min.) 0.6170
Ion-implanted SiO2 (at 8x1015/cm2, 50 KeV) 0.8330
Phosphosilicate (PSG) 1.1330
5%-5% Boronphosphosilicate (BPSG) 4.1670
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Deep x-ray Photoresist with Electroplating of
lithography desired patterns metal on patterns
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Mask (Si3N4) 7UDQVSDUHQW WR [ UD\ 
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PMMA POM PAS PMI PLG
Sensitivity Bad Good Excellent Reasonable Reasonable
Resolution Excellent Reasonable Very bad Good Excellent
Sidewall smoothness Excellent Very bad Very bad Good Excellent
Stress corrosion Bad Excellent Good Very bad Excellent
Adhesion on substrate Good Good Good Bad Good
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