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Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor material - Silicon

Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery 

SDT12S60

Product Summary VRRM Qc IF 600 30 12
P-TO220-2-2.

Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature

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V nC A

Type SDT12S60

Package P-TO220-2-2.

Ordering Code Q67040-S4470

Marking D12S60

Pin 1 C

Pin 2 A

Pin 3

Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz
TC=25°C, tp =10ms

Symbol IF I FRMS

Value 12 17 36 49 120 6.48 600 600 88.2 -55... +175

Unit A

Surge non repetitive forward current, sine halfwave I FSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1

I FRM I FMAX i2dt

Non repetitive peak forward current
tp =10µs, TC=25°C

i 2 t value, TC=25°C, tp =10ms

A²s V W °C

VRRM VRSM Ptot T j , Tstg

2002-01-14

Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance. T j=150°C Symbol min. diF /dt=200A/µs.7 62 K/W Electrical Characteristics. TC =25°C.5 1. f=1MHz VR =300V. Tj=150°C Symbol min. max. leaded RthJC RthJA Symbol min. 30 n. Unit V 1. junction . T j=25°C IF=12A. VF IR - Values typ. TC =25°C. TC =25°C. Tj=150°C Electrical Characteristics. unless otherwise specified Parameter AC Characteristics Total capacitive charge VR =400V. f=1MHz 450 45 43 2002-01-14 . max. unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=12A. Values typ. Tj=25°C V R=600V. Tj=150°C Total capacitance VR =1V.ambient.7 40 100 1. - Unit - nC ns pF Switching time VR =400V. junction . IF =12A.at Tj = 25 °C. diF /dt=200A/µs. f=1MHz VR =600V.a. at T j = 25 °C. IF =12A.1 µA 400 2000 Reverse current V R=600V. SDT12S60 Unit max.case Thermal resistance.7 2. 1. Qc trr C Page 2 Values typ.

tp = 350 µs 24 4 Typ. forward characteristic IF = f (VF ) parameter: Tj .2 36 d=0.5 16 IF V VF 2. d = tp/T 44 W A P F(AV) 150°C 125°C 100°C 25°C -40°C d=0.5 1 1.5 d=1 32 28 24 12 20 8 16 12 4 8 4 0 0 0.5 0 0 2 Page 3  40 60 80 100 120 140 °C TC 180 4 6 8 10 12 16 A IF(AV) 2002-01-14 . forward power dissipation vs.1 d=0. average forward current PF(AV)=f(IF ) TC =100°C.Preliminary data 1 Power dissipation Ptot = f (TC ) 90 SDT12S60 2 Diode forward current IF = f (TC ) parameter: Tj 175 °C 24 W A 20 70 60 18 16 P tot IF 50 40 30 20 10 0 0 14 12 10 8 6 4 2 20 40 60 80 100 120 140 °C 180 TC 0 0 20 3 Typ.

Preliminary data 5 Typ.50 10 -1 10 -2 0. reverse voltage C= f(VR ) parameter: TC = 25 °C.10 0. reverse voltage IR =f(VR) 10 2 SDT12S60 6 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 SDT12S60 µA 150°C 10 1 125°C K/W 100°C 25°C 10 0 10 0 Z thJC IR 10 -1 D = 0. f = 1 MHz 600 8 Typ.01 10 -2 10 -3 single pulse 10 -3 100 150 200 250 300 350 400 450 500 V VR 600 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ.05 0. C stored energy EC=f(VR ) 9 pF 500 450 µJ 7 6 5 4 3 2 1 0 0 C 350 300 250 200 150 100 50 0 0 10 10 1 10 2 V VR 10 3 EC 400 100 200 300 400 V VR 600 Page 4 2002-01-14 .20 0. reverse current vs. capacitance vs.02 0.

capacitive charge vs.Preliminary data 9 Typ.5 24 20 16 12 8 4 0 100 200 300 400 500 600 700 800 A/µs 1000 di F/dt Page 5 2002-01-14 . current slope Qc =f(diF /dt) parameter: Tj = 150 °C 40 SDT12S60 nC 32 28 IF *2 IF Qc IF *0.

0551 0.41 typ.40 0. 0.1398 0.4 typ.1516 0.095 typ.6024 0.6 typ.60 min 0. 0.26 typ. 6.0157 X L C M T K X Page 6 2002-01-14 .0256 0.0157 [inch] max 0.1024 0.90 0.0236 D U H B V F W J G F G H J K L M N P T U V W 1.80 4.5118 0. 0.00 13. 0.0 typ. 1.5 typ.1732 0.54 typ. 2.70 15. 13.3976 0.65 3.40 B C D E max 10.00 17.00 0.Preliminary data SDT12S60 TO-220-2-2 A P E N dimensions symbol [mm] min A 9.5512 0.295 typ. 0.3701 0.1 typ.51 typ.00 9. 0. 7.1181 0.10 1. 0.3819 0.60 9.40 2.1890 0.10 15.6260 0.0433 0.30 0. 4.05 typ.80 0.55 2.85 3.0335 0.20 4.173 typ.6772 0.00 17.85 3.0000 0.7008 0.4 typ.3543 0.40 0.40 14. 0.

SDT12S60 Information For further information on technology.Preliminary data Published by Infineon Technologies AG. descriptions and charts stated herein. delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Bereichs Kommunikation St. If they fail. including but not limited to warranties of non-infringement. Terms of delivery and rights to technical change reserved. if a failure of such components can reasonably be expected to cause the failure of that life-support device or system. We hereby disclaim any and all warranties. D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. it is reasonable to assume that the health of the user or other persons may be endangered. For information on the types in question please contact your nearest Infineon Technologies Office. Page 7 2002-01-14 . Infineon Technologies is an approved CECC manufacturer. or to support and/or maintain and sustain and/or protect human life. Warnings Due to technical requirements components may contain dangerous substances. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies. or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body. regarding circuits.-Martin-Strasse 53. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics.

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