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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications
High voltage and high current: • VCEO = 50 V (min), IC = 150 mA (max) Unit: mm
Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF = 1dB (typ.) at f = 1 kHz Complementary to 2SA1015 (O, Y, GR class)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 150 50 400 125 −55~125 Unit V V V mA mA mW °C °C
JEDEC JEITA TOSHIBA
TO-92 SC-43 2-5F1B
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Symbol ICBO IEBO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Base intrinsic resistance VCE (sat) VBE (sat) fT Cob rbb’ Test Condition VCB = 60 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA VCE = 6 V, IC = 150 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = −1 mA f = 30 MHz VCE = 6 V, IC = 0.1 mA f = 1 kHz, RG = 10 kΩ Min ⎯ ⎯ 70 25 ⎯ ⎯ 80 ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 100 0.1 ⎯ ⎯ 2.0 50 Max 0.1 0.1 700 ⎯ 0.25 1.0 ⎯ 3.5 ⎯ V V MHz pF Ω Unit μA μA
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
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