APM2014N

N-Channel Enhancement Mode MOSFET

Features
• • • •
20V/30A , RDS(ON)=12mΩ(typ.) @ VGS=4.5V RDS(ON)=18mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-252 Package

Pin Description

1

2

3

G

D

Applications

Power Management in Computer, Portable Equipment and Battery Powered Systems.

Top View of TO-252

Ordering and Marking Information
APM2014N

Handling Code Temp. Range

APM2014N U :

APM2014N XXXXX

Absolute Maximum Ratings
Symbol VDSS VGSS Parameter

w

w

.D w

Package Code

t a

S a

e h

t e

U 4

.c
S

m o

Package Code U : TO-252 Operation Junction Temp. Range C :-55 to 150 °C Handling Code TR : Tape & Reel

XXXXX - Date Code

(TA = 25°C unless otherwise noted)
Rating 20 ±16 V Unit

Drain-Source Voltage Gate-Source Voltage

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 1 www.anpec.com.tw

www.DataSheet4U.com

IDS=250µA V GS =±16V . IDS=250µA V DS =18V . V GEN =4. Electrical Characteristics Symbol Static BV DSS IDSS V GS(th) IGSS R DS(ON) a V SD a b (TA = 25°C unless otherwise noted) APM2014N Min.APM2014N Absolute Maximum Ratings (Cont. IDS =1A . pulse width ≤300µs. A. IDS =5A ISD =4A .tw Copyright  ANPEC Electronics Corp. 20 1 0.3 24 V µA V nA mΩ V Dynamic Qg Total Gate Charge Q gs Gate-Source Charge Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance nC 20 22 42 25 pF ns V DD =10V .6 4.5V .6 12 18 0. 2002 .2Ω V GS =0V 15 28 17 1210 300 210 V DS =15V Reverse Transfer Capacitance Frequency=1. IDS = 5A V GS =4. R G =0.Oct. V GS=0V V DS =10V . duty cycle ≤ 2% : Guaranteed by design..5 ±100 14 22 1.8 10 1. Max. not subject to production testing 2 www.anpec.5V .6 18. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage V GS =0V .0MHz Notes a b : Pulse test .5V . V DS =0V V GS =4. Typ. IDS =10A V GS =2.5V . V GS =0V V DS =V GS .1 . t ≤ 10 sec. Rev.com.2 5.) Symbol I * D (TA = 25°C unless otherwise noted) Rating 30 50 A Unit Parameter Maximum Drain Current – Continuous Maximum Drain Current – Pulsed TA=25°C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=100°C IDM PD TJ TSTG RθjA 50 W 10 150 -55 to 150 50 °C °C °C/W * Surface Mounted on FR4 Board.

Gate-to-Source Voltage (V) Threshold Voltage vs.5 1.10V Transfer Characteristics 30 25 25 3V ID-Drain Current (A) ID-Drain Current (A) 20 15 2. A.5.50 IDS=250uA On-Resistance vs.1 .anpec.6.010 0.5V 20 15 TJ=125°C 10 5 2V 10 5 0 0.Junction Temperature (°C) ID .5 3.025 0.tw .0 VDS .00 0.015 0.Drain-to-Source Voltage (V) VGS .020 0.75 0.000 VGS=2.8.0 1. 2002 3 www.5V VGS=4.com.5V -25 0 25 50 75 100 125 150 0 5 10 15 20 Tj .9.5 2.25 0.00 -50 RDS(ON)-On-Resistance (Ω) 0.APM2014N Typical Characteristics Output Characteristics 30 VGS=4.Oct.25 1.0 TJ=25°C TJ=-55°C 0 0 1 2 3 4 5 6 7 8 0.005 0.Drain Current (A) Copyright  ANPEC Electronics Corp. Drain Current 0.7.50 0. Rev.030 VGS(th)-Threshold Voltage (V) (Normalized) 1.. Junction Temperature 1.0 2.

Junction Temperature (°C) Gate Charge 10 VDS=4.com.00 0.50 1.Oct.07 ID=10A On-Resistance vs.5V 1.01 0.05 0.00 1.25 1. Rev.00 -50 -25 0 25 50 75 100 125 150 VGS .75 0.03 0. 2002 4 www.75 ID=10A RDS(ON)-On-Resistance (Ω) RDS(ON)-On-Resistance (Ω) (Normalized) 1 2 3 4 5 6 7 8 9 10 0.06 0. A.Gate-to-Source Voltage (V) TJ .5V ID=5A Capacitance 2100 1800 Frequency=1MHz VGS-Gate-Source Voltage (V) 8 Capacitance (pF) 1500 1200 900 600 Ciss 6 4 2 300 Coss Crss 0 0 5 10 15 20 25 30 35 0 0 4 8 12 16 20 QG .anpec.04 0.Gate Charge (nC) VDS .25 0. Gate-to-Source Voltage 0.50 0. Junction Temperature 2.tw .Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp.02 0.00 VGS=4.APM2014N Typical Characteristics On-Resistance vs.1 ..

5 D=0.01 1E-4 1E-3 0.4 0 1E-3 0.6 0.1 D=0.8 1.4 0. A.01 SINGLE PULSE 1.1 1 10 100 1000 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence.TJM-TA=PDMZthJA 0. 2002 5 www.0 0.02 D=0.2 1.Oct.. Rev.01 0.1 D=0.2 D=0. Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.Per Unit Base=RthJA=50°C/W 3.2 0.1 50 0.anpec. D=t1/t2 2.01 0.0 1.05 0.1 .tw .Duty Cycle.APM2014N Typical Characteristics Source-Drain Diode Forward Voltage 30 10 250 Single Pulse Power IS-Source Current (A) 200 Power (W) 150 1 TJ=150°C TJ=25°C 100 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp.com.

7 3 5. 0 18 0.anpec. 8 9 0. 2. 0 50 0. 0 35 0. 1 8 10 . A.. 1 56 0. 0 94 0. 0 25 0. 2 45 0. 0 86 0. 1 8 0. 0. 5 8 6. 4 10 Copyright  ANPEC Electronics Corp. 3 70 0. 3 9 1. 6 4 0. 2 04 0. 5 8 0. Rev.1 . 5 1 0. 0 80 www. 3 5 3. 2 7 0. 0 2 2. 0 23 0.tw Ma x . 4 61 0. 3 34 6. 41 Min . 0 32 6 Inc he s Ma x . 0 40 0. 0 20 0. 9 6 9. 2 10 0. 2 05 0. 0 20 0. 2002 . 0 35 0.APM2014N Packaging Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 8 9 5. 8 9 1. 2 65 0. 0. 0 23 0.Oct. 4 6 5. 2 15 0. 3 98 0. 5 08 5. 2. 0 18 0. 4 6 0. 0 35 0.com. 2 2 6. 2 50 0. 2 07 0.

2002 7 ..1 .APM2014N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91.tw Copyright  ANPEC Electronics Corp.anpec. thickness < 2. Rev. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. A. ANSI/J-STD-002 Category 3. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www. thickness < 2. 6 minutes max.5mm and pkg. volume ≥ 350 mm³ pkg.Oct. Package Reflow Conditions pkg.5mm and pkg.com.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness ≥ 2. Time 25°C to peak temperature VPR 10 °C /second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max.

. 100% RH.APM2014N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.0 ± 0.0 ± 0. A102 MIL-STD 883D-1011.com.05 TO-252 F 7.1 E 1.5± 0.7 JESD-22-B.4 + 0.3 2.5 SEC 1000 Hrs Bias @ 125°C 168 Hrs. 121°C -65°C ~ 150°C. A.1 Bo P 8 ± 0.5± 0.1 10.5 +0. Rev.1 t 0.5 -0.1 1.3 .5 Po T1 T2 16.Oct.9 Description 245°C. 2002 8 www.1 Copyright  ANPEC Electronics Corp.2 P1 2.1 Ko 2.3±0.4± 0.5 ± 0.8 ± 0.anpec.5± 0. 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 D t F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 ±3 B 100 ± 2 D 1.0.tw .1 Ao W 16+ 0.1 6.25 4.75± 0.1 .1 C 13 ± 0. 5 D1 J 2 ± 0.

Taiwan.. Head Office : 5F. 2002 9 www. Pac Chiao Rd. A.anpec. Hsin Tien City.APM2014N Cover Tape Dimensions Application TO. SBIP. No. 137. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev.Oct. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F.C. R.com. Taipei Hsien. Lane 235. C.1 . R.. Taiwan. 2 Li-Hsin Road.tw .O.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Hsin-Chu. O.252 Carrier Width 16 Cover Tape Width 13. No.

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