EGR220

Than & Gab
varying VCC (from 1V to 10V).

Lab #8

Introduction and Objectives
Although BJT (Bipolar Junction Transistor) has lost its polarity in IC (Integrated circuit ) design, it is really useful in discrete circuit design. Therefore, to understand their characteristic is really important.[1]. Therefore, in this lab, we were instructed to measure and analyze the static characteristic of BJT devices. The primary objectives of this lab are: 1. To analyze and understand the statics nature of BJT

Then, we repeated the measurement for IB= 8μA, 6μA, and 4μA. Then, we plotted the collected data on the graph.
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0

Equipments and Components used
In this lab, the equipments and components we used are:- Resistors: 100KΩ (x1), 1KΩ (x1); Transistors: 2N 2222 (x2), a breadboard, a waveform generator, ±20V power supply, a multi-meter, wires and cords.

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Procedures
Procedure 1: Analyzing the Static Characteristic of BJT

Figure 2 : IC- VCE Curve (VBE = 0.61, 0.62,0.63,0.64 V)

VCC +5V IC R1= 10k RB=100k IB VBB RC= 1k

+ + - VCE
Table 1: IC Vs. VCE (VBE = 0.62V) Since IB = 6μA and VCE = 6V, IC = 0.98 mA. Therefore β= IC / IB = 163.33. ro was calculated from the linearizing the values from I-V curve when VBE = 0.62V). ro ≈ ( ΔIC / ΔVCE)^-1 VA = roIC – VCE Therefore, r0 =99KΩ and VA = 92V. When we

VBE

Figure 1
We connected the circuit in the figure 1, by using the components for the lab. Then, we measured the base current IB by adjusting R1 until we got IB = 10 μA. Then, we measured VBB and VBE, which were 1.64V and 0.64V respectively. Then, we measured IC and VCE point by point by

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EGR220

Than & Gab

Lab #8

compared these values. Since in simplified π model, gm = IC / VBE = 0.00158 = 1.58 mA/V.

Discussion
Since BJT are useful in discrete circuit design, we analyzed the static characteristic of BJT. We measured and plotted the I-V curve for collector current and collector-emitter voltage, while keeping base-emitter voltage constant. From that we could derive, early voltage, ro, transconductance gm. Although π model is simple
to use, there are other models which are better for analysis such as Ebers-Moll Model.

References
[1] Sedra, Adel S., and Smith. Kenneth C. “Microelectronics Circuits”. 5th. New York: Oxford University Press, 2004.

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