Electronic Devices Laboratory Department of ETCE .

LIST OF EXPERIMENTS

I CYCLE

1. SYMBOLS , IDENTIFICATION AND CHECKING OF ELECTRONIC COMPONENTS

2. V- I CHARACTERISTICS OF SEMICONDUCTOR DIODE

3. V- I CHARACTERISTICS OF ZENER DIODE

4. V- I CHARACTERISTICS OF UJT

5. V- I CHARACTERISTICS OF JFET

6. INPUT & OUTPUT CHARACTERISTICS OF TRANSISTOR UNDER CB CONFIGURATION

7. INPUT & OUTPUT CHARACTERISTICS OF TRANSISTOR UNDER CE CONFIGURATION

Manual prepared by Mr.N.Hariprasad ETCE DEPT. Sathyabama University Dr.Jeppiaar Nagar Chennai-119
Electron Devices Laboratory Department of ETCE 2

Expt. No :1
Date:
STUDY AND CHECKING OF ELECTRONIC COMPONENTS
(Identification, color coding, Symbols, and checking of electronic components )

Aim:
1) To identify the given electronic components
2) To under stand the colour coding scheme used in resistors and capacitors.
3) To know about the symbols used to specify electronic components.
4) To obtain the through knowledge about checking of the electronic
components.

Identification of components

1) Diode: Diode is two terminal devices. Anode and Cathode are the two
electrodes (denoted by A and K respectively) and the later is indicated by
any distinct mark on the body of the component.

2) Transistor: BJT, FET, MOSFET all comes under the category of transistor. But
in normal usage transistor straightaway means BJT. Some of the commonly
used transistors’ package details are illustrated in the fig 1-2. (Using this
we can identify the terminals only-not its type)

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Electron Devices Laboratory Department of ETCE 3

Passive components: Resistors, Capacitors and inductors are the important passive
components used in electronics. None of these elements (except electrolytic
capacitor) has polarity. Some of the commonly used passive components are
illustrated in fig 1-3

Colour code: If you are a bit serious about the electronics hobby I recommend
learning the "Colour-Code". It makes life a lot easier. The same colour code is used
for everything else, like coils, capacitors, rf-chokes, etc. Again, just the colour code
associated with a number, like: black=0 brown=1 red=2, etc, etc. Refer fig 1-4

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Electron Devices Laboratory Department of ETCE 4

Example 1: For a Carbon 22000 Ohms or 22 Kilo-Ohms also known as 22K at 5%

tolerance: Band 1 = Red, 1st digit
Band 2 = Red, 2nd digit
Band 3 = Orange, 3rd digit, multiply with zeros, in this case 3 zero's
Band 4 = Gold, Tolerance, 5%

Example 2 : For a Precision Metal Film 19200 Ohms or 19.2 Kilo-Ohms also known as
19K2 at 1% tolerance: Band 1 = Brown, 1st digit
Band 2 = White, 2nd digit
Band 3 = Red, 3rd digit
Band 4 = Red, 4th digit, multiply with zeros, in this
case 2 zero's
Band 5 = Brown, Tolerance, 1%
Band 6 = Blue, Temperature Coefficient, 6

Note : If the 3rd band is gold it means multiplying by 0.1. Example, 1.2 ohm @ 5%
would be brown-red-gold-gold. 12multiplied by 0.1 gives 1.2
Don't get confused by gold as a resistance or a tolerance value. Just watch the
location/position of the band.
Do the exercises below.

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Electron Devices Laboratory Department of ETCE 5
1st band, denominator: Brown (1) 2nd band, denominator: Black (0)
3rd band, how many zeros (1) 4th band, tolerance in %: gold (5)
Answer: 1 0 1 = 100 ohm, 5% tolerance

1st band: _____ 2nd band: _____ 3rd band: _____ 4th band, tolerance in %: _____
Answer: ___________________

1st band: _____ 2nd band: _____ 0 3rd band: _____ 4th band, tolerance in %: _____
Answer: ___________________

1st band: _____ 2nd band: _____ 3rd band: _____ 4th band, tolerance in %: _____
Answer: ___________________

1st band: _____ 2nd band: _____ 3rd band: _____ 4th band, tolerance in %: _____
Answer: ___________________

4700 ohm, 5% = yellow violet red, gold 100 ohm, 2% = brown black brown, red

1000 ohm, 5% = brown black red, gold 22 ohm, 1% = red red black, brown

150 ohm, 5% = ________________________ 270 ohm, 5% = _____________________

3300 ohm, 5% = ________________________ 10 ohm, 1% =

________________________

470 ohm, 2% = ________________________ 6800 ohm, 10% =

________________________

3K3, 5% = ________________________ 1K, 5% = ________________________

150 ohm, 1% = ________________________ 2M9, 10% = ________________________

10M, 10% = ________________________ 1 Mega Ohm, 5% =

________________________

1 ohm, 1% = ________________________ 3M9, 20% = ________________________

1200 ohm, 5% = ________________________ 1K2, 5% = ________________________

3900 ohm, 2% = ________________________ 100.000 ohm, 5% =

________________________

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Electron Devices Laboratory Department of ETCE 6
10K, 5% = ________________________ 10.000 ohm, 5% =
________________________

Symbols :

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Electron Devices Laboratory Department of ETCE 7

Checking of Components:

Diode :
1) Keep the Multimeter in resistance or continuity mode.
2) Connect the two test probe on either side of the diode.
3) Either it reads low resistance or shows high resistance.
4) Reverse the probe connections
5) Now the meter should read opposite to that of the step 3
i) If it is so then the diode is OK,
ii) In this case while showing the low resistance the electrode connected
to the positive probe is anode.
6) If the meter reads in the same way for both the connections then the diode
is useless.
i) If it is low resistance, the diode is said to be shorted.
ii) If it is high then the diode is open.

Transistor :
1) The transistor can be considered as two diodes ie The base emitter junction
forms one diode and the collector base junction forms the other.
2) Individually check both the junctions and confirm both are OK.

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Electron Devices Laboratory Department of ETCE 8
3) Also there must not be any collector emitter short.
4) If we know the type and terminals of the transistor exactly then it can be
straightaway inserted in the slot provided in the digital multimeter (and the
rotary switch of the meter pointing hfe) and read the value .If the hfe value
is in between 50 and 300 the transistor is OK.
Passive components :
1) For measuring resistors multimeters can be used.
2) For measuring capacitors and inductors RLC meters, bridges are available.
3) i) For Electrolytic capacitor connect the two probes of the multimeter
to the either end of the device. The meter immediately flases to low
resistance and slowly returns to the high value. Remove one end of the
probe for an instant and reconnect it .There must not be any change.
ii ) Reverse the connection and the meter re-shots. If it is so then the
electrolytic capacitor
is working.

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Electron Devices Laboratory Department of ETCE 9
Expt. No :2
Date:
V - I CHARACTERISTICS OF PN JUNCTION DIODE

AIM:
To plot the VI characteristics of a PN junction diode in both forward and
reverse biased condition
To calculate its cut in voltage, forward resistance and reverse resistance.

APPARATUS REQUIRED :

SLN NAME OF THE

RANGE TYPE QTY
O APPARATUS
Regulated
1 0-30 V DC 1 No
power supply
2 Volt meter 0-30V MC 1 No
(0-50mA), (0-
Each
3 Ammeter 50µ A) MC
1 NO

4 Diode - 1N4001 1No

5
Breadboard - - 1 No

THEORY:
A diode is a PN junction formed by a layer of P-type and a layer of N-type
semiconductor. When a PN junction is formed, the free electrons in the N-region
diffuse across the junction and combine with holes in the P-region and so a depletion
layer is developed. The depletion layer consists of ions which acts like a barrier for
diffusion of charges beyond a certain limit. The difference of potential across the
depletion layer is called the barrier potential. At 25° centigrade, this barrier potential
is approximately equals 0.7 v for silicon diodes and 0.3V for germanium diodes.
When the junction is forward biased the majority carriers acquired sufficient energy
to overcome the barrier and the diode conducts. When the junction is reverse-biased
the depletion layer widens and the barrier potential increases. Hence the majority
carriers cannot cross the junction and the diode does not conduct. But there will be
small leakage current due to minority carriers.

PROCEDURE:

FORWARD BIAS:
The connections are made as shown in the circuit diagram. For forward bias
the positive terminal of power supply is connected to anode of the diode, negative
terminal to cathode. The power supply is switched on. The forward voltage Vf across
the diode is increased in small steps and the forward current is noted. The readings
are tabulated.
A graph is drawn between Vf and If by taking Vf along x-axis.The inverse
of the slope of the linear portion of the graph gives the forward resistance Rf of the
diode Rf=Vf / If.

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Electron Devices Laboratory Department of ETCE 10

REVERSE BIAS:
For reverse bias the positive terminal of the power supply connected to
cathode of the diode and the negative terminal to the anode of the diode. The power
supply is switched on. The reverse bias voltage V r is increased in steps and reverse
current Ir is noted in each step. The readings are tabulated. A graph is drawn
between Vr and Ir taking Vr on x-axis. The reverse characteristics curve is
approximately a straight line .

CIRCUIT DIAGRAM:

TABULATIONS:

FORWARD BIAS REVERSE BIAS

Vf (V) If(mA) Vr (V) Ir (µ A)

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Electron Devices Laboratory Department of ETCE 11

RESULT:
The forward and reverse characteristics of the semiconductor diode has been
plotted
The forward resistance of the diode = ---------
The cut-in voltage of the diode = ---------

Expt. No :3
Date:
V - I CHARACTERISTICS OF ZENER DIODE

AIM:
To plot the VI characteristics of a ZENER diode in both forward and reverse
biased condition
To calculate its cut-in voltage, forward-resistance and knee-voltage

APPARATUS REQUIRED :

SLN NAME OF THE

RANGE TYPE QTY
O APPARATUS
Regulated
1 0-30 V DC 1 No
power supply
2 Volt meter 0-30V MC 1 No

3 Ammeter (0-50mA), MC 1
NO

4 Zener Diode - FZ 5.1 V 1No

5
Breadboard - - 1 No

THEORY
The diodes which are designated to operate in the breakdown region are
called Zener diodes. The other names are avalanche diode or break down diodes.
In avalanche breakdown, the conduction in reverse bias is due to avalanche
multiplication of charge carriers .In Zener breakdown, the breakdown is due to direct
rupture of covalent bonds because of the presence of strong electric field. Zener
break down usually occurs in silicon PN-junction at reverse bias of less than
6v.Avalanche breakdown diodes will have higher breakdown voltages from several
volts to several hundred volts.
CIRCUIT DIAGRAM

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Electron Devices Laboratory Department of ETCE 12

PROCEDURE:

FORWARD BIAS:
The connections are made as shown in the circuit diagram. For
forward bias the positive terminal of power supply is connected to anode of the
diode, negative terminal to cathode. The power supply is switched on. The forward
voltage Vf across the diode is increased in small steps and the forward current is
noted. The readings are tabulated. A graph is drawn between Vf abd If by taking Vf
along x-axis. The inverse of the slope of the linear portion of the graph gives the
forward resistance R f of the diode
R f = V f / If

REVERSE BIAS:
The connections are made as per the circuit diagram. A multimeter with
(0-250 µ A) & (0-10mA) current range is used to measure the reverse current. First
the (0-250µ A) range is connected in the circuit. The power supply is switched ON
and the supply voltage is gradually increased. As the reverse bias voltage reaches
the breakdown voltage, the current through the Zener diode increases rapidly, the
breakdown voltage is noted. Before the breakdown the current is low. Hence to
determine the current before breakdown the connection is changed such that the
lower range of ammeter is connected in the circuit.
The voltage is increased in small steps and the current in each step is
noted. As the current reaches 0.2 milli-amperes the connection is changed to
include (0-10mA) range and the expt is continued till a reverse current of 10mA.The
250mA is included and the expt is continued up to a current of 30mA..A graph is
plotted between Vr and I r by taking V r in X-axis. The reverse conduction region is
extended to meet the X-axis at a point, the value of the voltage at this point is the
reverse breakdown voltage Vrb. The inverse of the slope of the reverse conduction
region is the reverse resistance of the Zener, Rr= V r / Ir ohms.

TABULATIONS:

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Electron Devices Laboratory Department of ETCE 13
FORWARD BIAS REVERSE BIAS

Vf (V) If(mA) Vr (V) Ir (µ A)

ZENER DIODE: The forward resistance of the Zener diode =---------

The reverse resistance of the Zener diode = ---------
The reverse breakdown voltage Vrb = ----------

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Electron Devices Laboratory Department of ETCE 14
Expt . No :4
Date:
CHARACTERISTICS OF UJT
AIM:
To determine the emitter characteristics of a UJT

APPARATUS REQUIRED :

SLN NAME OF THE

RANGE TYPE QTY
O APPARATUS
Regulated power
1 0-30 V DC 2 Nos
supply
2N264
2 Uni Junction Transistor - 1 No
6
3 Volt meter 0-30V MC 2 Nos
4 Ammeter (0-30mA), MC 1 NO
1KΩ , Each
5 Resistors carbon
560ohms 1No
Breadboard
6 - - 1 No

THEORY:
The UJT consists of a bar of lightly doped n-type silicon with a small piece of
heavily doped P type material joined to one side. The end terminal of the bar is
designated as base B1 and base B2 and the P type region is taken as emitter E. Since
the silicon region is lightly doped it has high resistance and can be represented as
two resistors as shown in equivalent circuit .The P type emitter forms a P-N junction
with N type silicon bar and thus junction is represented by a diode in the equivalent
circuit.
When a voltage is applied between two bases it divides between two
resistances in the ratio of their values .Let V1 be the voltage across the resistor
Rb1.Now when the emitter is forward biased and if the forward bias voltage is less
than V1, the diode is actually reverse bias and the device will be in cutoff. If the
emitter voltage is increased above V1 the emitter current flows, the voltage at
which the device starts conduction is called peak voltage Vp, when the emitter
voltage is increased beyond Vp the charge carriers are injected in to n-region and
the resistance starts decreasing since the resistance depends on doping, now the
device inters negative resistance region. In this region as voltage decreases the
current reaches a certain limit the resistance is saturated, the voltage falls to a low
value called valley voltage Vv, after this valley point if forward voltage is increased
further the emitter current increases rapidly with slight increase in emitter voltage
similar to forward biased diode.
CIRCUIT DIAGRAM:

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Electron Devices Laboratory Department of ETCE 15

PROCEDURE:
The connections are made as shown in the circuit diagram. First the
lower range ammeter (0-25) mA is connected in the circuit. The DRB is set to 100 K
ohms. The power supplies are switched on. The voltage across base - 2 and base-1,
Vb2 b1, is set to some desired value. The emitter voltage is increased. The emitter
voltage is increased. At a certain voltage the device will just start conduction. The
voltage just above this point is the peak voltage, V p and it is noted. Then supply
voltage is increased further. With increase in the supply voltage the emitter voltage
falls and current increases. The readings are taken in this negative resistance
region and tabulated. The emitter current cannot be increased beyond certain limit,
even by increasing the power supply voltage. This happens because the resistance
Rb1 in the conduction state is very much less than the series resistance 100K. Hence
almost the full supply will be dropped across the series resistance. Now in order to
increase the emitter current the series resistance is reduced in steps and the expt.
is continued as before. When the emitter current reaches 0.25mA, the ammeter
range changes to 0-10mA and the expt. is continued. The readings are tabulated.
The expt. is repeated with different constant voltages of Vb2 b1. A set of graph
is drawn b/n emitter current and emitter voltage by taking emitter current along x-
axis. The peak voltage and the valley voltages are marked on the graph.

TABULATION:

EMITTER CHARACTERISTICS OF UJT

Vb2 b1 = 15V Vb2 b1 = 5 V Vb2 b1 = 10 V

Ve (V) Ie (mA) Ve (V) Ie (mA) Ve (V) Ie (mA) RESULT:

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Electron Devices Laboratory Department of ETCE 16
The emitter characteristics of the given UJT are determined.

Intrinsic stand-off ratio η =

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Electron Devices Laboratory Department of ETCE 17
Expt.No :5
Date:
CHARACTERISTICS OF JFET

AIM:
To determine the drain and transfer characteristics of JFET and hence
to calculate the parameters of JFET

APPARATUS REQUIRED :

SL NAME OF THE
RANGE TYPE QTY
NO APPARATUS
Regulated 2
1 0-30 V DC
power supply Nos
Junction Field BFW
2 - 1 No
Effect Transistor 10
2
3 Volt meter 0-30V MC
Nos
(0-30mA),
4 Ammeter MC
1 No
1KΩ , Each
5 Resistors carbon
560ohms 1No
Breadboard
6 - - 1 No

THEORY:
The JFET or FET is a uni-polar transistor and its operation depends on only
one type of charge either hole or electron. The FETS are voltage controlled devices.
An n-channel FET consists of a bar of n-type silicon with two islands of p-type
material embedded in the sides. The two terminals of the channels are called
source and drain,. The free electrons enter the channel through source terminal and
leaves though drain terminal. The two p-regions in the n-channel FET are internally
connected and is called gate. Similarly in p-channel FET the two n regions are
internally connected. In most of the JFET the drain and source terminals are
interchangeable. The gate terminal of JFET is normally reverse biased and this
mode of operation is depletion mode.
If the drain is forward biased with respect to source with gate shorted to
source then the drain current increases as drain to source voltage increases. After a
certain amount of voltage called pinch off voltage Vp the resistance of the channel
increases high value and current attains saturation. This maximum value of drain
current with gate shorted to source is called drain-source saturation current Idss.
The conduction through channel can be controlled by reverse biasing the gate.
When gate is reverse biased an electric field develops in the gate channel junction
which reduces the channel width and so the conduction through the channel is
controlled, As the reverse bias gate voltage increases the drain current decreases.
The gate source bias voltage required to reduce drain current to zero is designated
as the gate cut-off voltage Vgs(OFF). Also Vgs (OFF) is equal to pinch off voltage Vp.

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Electron Devices Laboratory Department of ETCE 18

CIRCUIT DIAGRAM:

PROCEDURE:

DRAIN CHARACTERISTICS:
The connections are made as shown in the circuit diagram.
The drain characteristics are plotted between drain source Vds and drain current Id
with different constant gate to source voltage Vgs. First the gate terminal is shorted
to source. The power supply in the drain circuit is switched ON. The drain to source
voltage is varied in small steps and drain current is noted in each steps and the
readings are tabulated. Then the short between the gate and source is removed
and gate supply is switched ON. The expt. is repeated with different constant gate
to source voltages. A set of graphs are plotted between Vds and Id by taking Vds on
X-axis. The pinch off voltage and the drain source saturation current are marked in
the graph.
TRANSFER CHARACTERISTICS:
The same circuit is used to determine the transfer
characteristics. The power supplies are switched ON. The gate to source voltage is
varied in small steps and the drain current is noted in each steps and the readings
are tabulated. The expt. is repeated with different constant drain to source voltage.
A graph is plotted between Vgs and Id by taking Vgs on X-axis. The drain-source
saturation current and pinch off voltage are marked on the graph.
TABULATION:

DRAIN CHARACTERISTICS: TRANSFER CHARACTERISTICS:

Vds = 15V
Vgs=0V Vgs=-1V Vgs=-5V

Vds( Id Vds Id Vds Id

mA) (mA) (V) (mA) (V) (mA)

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Electron Devices Laboratory Department of ETCE 19

RESULT:
The drain and transfer characteristics of the given JFET are determined
and the parameters are calculated.
The drain resistance , rd=
The transconductance , gm=
The amplification factor , µ =

Vgs (V) Id (mA)

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Electron Devices Laboratory Department of ETCE 20
Expt.No :6
Date:
CHARACTERISTICS OF TRANSISTOR UNDER
COMMON BASE CONFIGURATION

Aim:
To determine the input & output characteristics of the transistor when
operated on common emitter mode

APPARATUS REQUIRED :

SLN NAME OF THE

RANGE TYPE QTY
O APPARATUS
Regulated power 2
1 0-30 V DC
supply NOs
BC
2 Transistor - 1 No
107
(0-30V),(0- Each
3 Volt meter MC
1V) 1No
(0-30mA),
4 Ammeter MC 2
NOs
5 Resistors 1KΩ carbon 2Nos
Breadboard
6 - - 1 No

Apparatus:
1.DC power supply (0-30V)
2.MC ammeter (0-250µ A)& (0-30mA)
3.FET voltmeter
4.Transistor BC107
5.Resistors 100KΩ ,1KΩ
6.Breadboard

Theory:
The transistor is a three terminal device. In a transistor one of the
terminals can be made common to both input and output circuits. In common base
mode the base is made common. In this mode the i/p is emitter and o/p is taken
from collector. In CB mode
Ie ,Veb & Ic, Vcb are input current and voltage, o/p current and voltage
respectively. It is conventional to select i/p current & o/p voltage as independent
variables.
Therefore the o/p current and i/p voltage can be expressed in terms of these
independent variables.
Veb = f1(Ie,Vcb)---1
Ic = f2(Ie,Vcb)----2

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Electron Devices Laboratory Department of ETCE 21
The equation l represents the family of i/p characteristics .The i/p
characteristics are plotted between Ie and Veb for different constant values Vcb .The
equation 2 represents the family of o/p characteristics .
The o/p characteristics are plotted between I c & Vcb for different constant
values of Ie.In a common emitter NPN transistor the current & voltages are all +Ve.
But for PNP all the quantities are negative.

Procedure:
The connections are shown in the circuit diagram. For i/p characteristics
(0-30mA) range ammeter is connected into o/p circuit . The i/p power supply is
switched ON. The i/p voltage Veb is varied in small steps and i/p current I e is noted
by keeping the o/p voltage Vcb as zero.
The o/p circuit power supply is switched on and V cb is set to 1V and the expt
is repeated as before by maintaining Vcb at 1V.Again the expt can be repeated for
different constant values of Vcb .The readings are tabulated. A graph is drawn b/w Ie
& Veb.

Output Characteristics:
The i/p current is set to a constant value say 50µ A. The o/p voltage Vcb
is varied in small steps and the o/p current Ic is noted .The expt is repeated for
different constant values of emitter current. A graph is drawn.

CIRCUIT DIAGRAM:

Tabulations:
Input Characteristics:

Vcb = 0V Vcb = 1V Vcb = 5V

Veb (V) Ie (µ A) Veb (V) Ie (µ A) Veb (V) Ie (µ A)

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Electron Devices Laboratory Department of ETCE 22

Output Characteristics:

Ie = 50µ A Ie = 75µ A Ie = 100µ A

Veb (V) Ie (µ A) Veb (V) Ie (µ A) Veb (V) Ie (µ A)

Result:
The i/p and o/p characteristics are drawn and h-parameters are calculated.

Expt .No:6
Date:
CHARACTERISTICS OF TRANSISTOR UNDER
COMMON EMITTER CONFIGURATION
AIM:
To determine the input & output characteristics of the transistor when
operated on common emitter mode .

APPARATUS:
1.DC power supply (0-30V)
2.MC ammeter (0-250µ A)& (0-30mA)
3.FET voltmeter
4.Transistor BC107
5.Resistors 100KΩ ,1KΩ
6.Breadboard

THEORY:
The transistor is a three terminal device. In a transistor one of the
terminals can be made common to both input and output circuits. In common
emitter mode the emitter is made common. In this mode the i/p is given to the base
and o/p is taken from collector. In CE mode Ib ,Vbe Ic & Vce are input current and
voltage, o/p current and voltage respectively. It is conventional to select i/p current
& o/p voltage as independent variables.
Therefore the o/p current and i/p voltage can be expressed in terms of these
independent variables.
Vbe = f1(Ib,Vce)---1
Ic = f2(Ib,Vce)----2
The equation l represents the family of i/p characteristics .The i/p
characteristics are plotted between Ib and Vbe for different constant values Vce .The
equation 2 represents the family of o/p characteristics . The o/p characteristics are
plotted between Ic & Vce for different constant values of Ib.In a common emitter NPN
transistor the current & voltages are all +Ve.But for PNP all the quantities are
negative.

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Electron Devices Laboratory Department of ETCE 23
PROCEDURE:
The connections are shown in the circuit diagram. For i/p characteristics
(0-30mA) range ammeter is connected into o/p circuit . The i/p power supply is
switched ON. The i/p voltage Vbe is varied in small steps and i/p current I b is noted
by keeping the o/p voltage Vce as zero.
The o/p circuit power supply is switched on and V ce is set to 1V and the expt
is repeated as before by maintaining Vce at 1V.Again the expt can be repeated for
different constant values of Vce .The readings are tabulated. A graph is drawn b/w Ib
& Vbe.

OUTPUT CHARACTERISTICS:
The i/p current is set to a constant value say 50µ A. The o/p voltage Vce
is varied in small steps and the o/p current Ic is noted .The expt is repeated for
different constant values of base current. A graph is drawn.

CIRCUIT DIAGRAM:

TABULATION:
INPUT CHARACTERISTICS:

Vce = 0V Vce=1V Vce=5V

Vbe (V) Ib (µ A) Vbe (V) Ib (µ A) Vbe (V) Ib (µ A)

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Electron Devices Laboratory Department of ETCE 24

OUTPUT CHARACTERISTICS:

Ib = 50µ A Ib = 75µ A Ib = 100µ A

Vce (V) Ic (mA) Vce (V) Ic (mA) Vce (V) Ic (mA)

RESULT:
The i/p and o/p characteristics are drawn and h-parameters are calculated.

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