N-CHANNEL 100V - 0.

055 Ω - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE IRF540
s s s s s

IRF540

VDSS 100 V

RDS(on) <0.077 Ω

ID 22 A

TYPICAL RDS(on) = 0.055Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION
TO-220

3 1 2

DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL

Ordering Information
SALES TYPE

MARKING IRF540& TO-220

PACKAGE TUBE

PACKAGING

IRF540

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM(•) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 20 22 15 88 85 0.57 9 220 -55 to 175
1) ISD ≤22A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX (2) Starting T j = 25 oC, ID = 12A, VDD = 30V

Unit V V V A A A W W/°C V/ns mJ °C

(•) Pulse width limited by safe operating area.

February 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &

1/8

5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA.055 Max. Unit S pF pF pF VDS = 25V. Max. VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20V Min. 2 Typ. 4 0. Unit V µA µA nA IGSS ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 11 A Min.077 Unit V Ω DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS =25 V ID = 11 A Min. VGS = 0 2/8 .76 62. f = 1 MHz.IRF540 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 1. 20 870 125 52 Max. 3 0. Typ. 100 1 10 ±100 Typ.

5 Test Conditions Min. Typ. Figure 5) (*)Pulsed: Pulse duration = 300 µs. Figure 3) Min. duty cycle 1.5 %. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (•) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 22 A VGS = 0 100 375 7. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 12 A VDD = 50 V RG = 4.7 Ω VGS = 10 V (Resistive Load.3 Unit A A V ns nC A di/dt = 100A/µs ISD = 22 A VDD = 30 V Tj = 150°C (see test circuit. Safe Operating Area Thermal Impedance 3/8 .IRF540 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 12 A VDD = 50 V RG = 4. (•)Pulse width limited by safe operating area. 60 45 30 6 10 41 Max. VGS = 10 V (Resistive Load. Max. Typ. Figure 3) VDD= 80 V ID= 22 A VGS= 10V Min.7Ω. 22 88 1. Typ. 50 20 Max.

IRF540 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 .

. 5/8 .IRF540 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature .

2: Unclamped Inductive Waveform Fig.IRF540 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 4: Gate Charge test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 .

90 14 2.600 0.88 1. TYP.20 3.107 0. MAX. MIN.067 0.116 0.260 0.620 0.024 0.75 mm.154 0.551 0.094 0.094 0.70 0.409 7/8 .72 0.49 0.048 0.70 5.044 0.40 MIN.203 0.93 3.61 1. TYP.70 10.106 0.244 0.137 0.14 1.65 15.151 inch.15 2.051 0. 0. A C D E F F1 F2 G G1 H2 L2 L3 L4 L5 L6 L7 L9 DIA 13 2.194 0. 0.40 0.027 0.40 28.104 0.173 0. 4.40 10 16.IRF540 TO-220 MECHANICAL DATA DIM.95 15.393 0.75 6.14 4.85 0.95 2.067 0.019 0.60 3.034 0.23 2. 4.4 1.137 0.32 2.044 0.50 3.70 1.147 TYP.6 1.25 6.511 0.181 0.645 1.

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