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PD - 91612C

IRG4PH40U
INSULATED GATE BIPOLAR TRANSISTOR Ultra Fast Speed IGBT

Features C
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching, VCES = 1200V
>200 kHz in resonant mode
• New IGBT design provides tighter
G VCE(on) typ. = 2.43V
parameter distribution and higher efficiency than
previous generations
• Optimized for power conversion; SMPS, UPS E @VGE = 15V, IC = 21A
and welding n-channel
• Industry standard TO-247AC package

Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• Much lower conduction losses than MOSFETs
• More efficient than short circuit rated IGBTs

TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 41
IC @ TC = 100°C Continuous Collector Current 21 A
ICM Pulsed Collector Current Q 82
ILM Clamped Inductive Load Current R 82
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy S 270 mJ
PD @ T C = 25°C Maximum Power Dissipation 160
W
PD @ T C = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.77
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– 40
Wt Weight 6 (0.21) ––– g (oz)

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IRG4PH40U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.43 — V/°C VGE = 0V, IC = 1.0mA
— 2.43 3.1 IC = 21A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage — 2.97 — IC = 41A See Fig.2, 5
V
— 2.47 — IC = 21A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U 16 24 — S VCE = 100V, IC = 21A
— — 250 VGE = 0V, VCE = 1200V
ICES Zero Gate Voltage Collector Current
— — 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C
— — 5000 VGE = 0V, VCE = 1200V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)


Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 86 130 IC = 21A
Qge Gate - Emitter Charge (turn-on) — 13 20 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 29 44 VGE = 15V
td(on) Turn-On Delay Time — 24 —
tr Rise Time — 24 — TJ = 25°C
ns
td(off) Turn-Off Delay Time — 220 330 IC = 21A, VCC = 960V
tf Fall Time — 180 270 VGE = 15V, RG = 10Ω
Eon Turn-On Switching Loss — 1.04 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 3.40 — mJ See Fig. 9, 10, 14
Ets Total Switching Loss — 4.44 5.2
td(on) Turn-On Delay Time — 24 — TJ = 150°C,
tr Rise Time — 25 — IC = 21A, VCC = 960V
ns
td(off) Turn-Off Delay Time — 310 — VGE = 15V, RG = 10Ω
tf Fall Time — 380 — Energy losses include "tail"
Ets Total Switching Loss — 7.39 — mJ See Fig. 11, 14
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 1800 — VGE = 0V
Coes Output Capacitance — 120 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 18 — ƒ = 1.0MHz
Notes:

Q Repetitive rating; VGE = 20V, pulse width limited by


max. junction temperature. ( See fig. 13b )

R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
(See fig. 13a) U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.

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IRG4PH40U
50
F o r b o th : T ria n g u la r w a ve :
D uty c yc le: 50%
I
T J = 125°C
40 T s ink = 90°C
G ate driv e as spec ified
P o w e r D is s ip a tio n = 3 5 W C la m p vo l ta g e :
Load Current ( A )

8 0 % o f ra te d

30
S q u a re wave :
6 0 % o f ra te d
vo l ta g e
20
I

10
Id e a l d io de s

0 A
0.1 1 10 100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency


(Load Current = IRMS of fundamental)

100 100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)


TJ = 150 o C


TJ = 150 o C
10 10


TJ = 25 oC


TJ = 25 o C

1

V GE = 15V
20µs PULSE WIDTH
1

V = 50V
CC
5µs PULSE WIDTH
1 10 5 6 7 8 9 10
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PH40U
50

4.0
VGE = 15V
80 us PULSE WIDTH 
I C = 42 A

VCE , Collector-to-Emitter Voltage(V)


Maximum DC Collector Current(A)

40

3.0
30

I C = 21 A

20 
I C =10.5 A
2.0

10

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( ° C) TTJ J, Junction
, Junction ( °C( °)C)
Temperature
Temperature

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

1
Thermal Response (Z thJC )

D = 0.50

0.20


0.1 0.10

P DM
0.05
t1
0.02
 SINGLE PULSE t2


0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4PH40U


4000


20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 21A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)


Coes = Cce + Cgc 16
3000
C, Capacitance (pF)


Cies
12

2000


Coes
1000
4

Cres

0 0
1 10 100 0 20 40 60 80 100
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.


Collector-to-Emitter Voltage Gate-to-Emitter Voltage

 
5.0 100
V CC = 960V RG = 10 Ω
Ohm
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 960V
4.8 I C = 21A 
IC = 42 A
Total Switching Losses (mJ)
Total Switching Losses (mJ)

10 
IC = 21 A
4.6

IC = 10.5 A

4.4
1

4.2

4.0 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
RGRG
, Gate
, GateResistance (Ω)
Resistance(Ohm) TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4PH40U

 
25.0 1000
RG = 10
OhmΩ VGE = 20V
TJ = 150 ° C T J = 125 oC

I C , Collector-to-Emitter Current (A)


VCC = 960V
20.0 VGE = 15V
Total Switching Losses (mJ)

100
15.0

10.0
10

5.0

SAFE OPERATING AREA


0.0 1
0 10 20 30 40 50 1 10 100 1000 10000
I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA


Collector-to-Emitter Current

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IRG4PH40U

L D .U .T.
VC * 960V
RL =
4 X I C@25°C
50V 0 - 960V
1 00 0V 480µF
960V
Q
R

* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )


* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.

Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector


Load Test Circuit Current Test Circuit

IC
L
D river* D .U .T. Fig. 14a - Switching Loss
VC Test Circuit
50V
1000V
* Driver same type
Q as D.U.T., VC = 960V
R S

90 %

S 10 %

VC
90 %
t d (o ff)
Fig. 14b - Switching Loss
Waveforms

1 0%
IC 5%
tr tf
t d (o n ) t=5µ s
Eon E o ff
E ts = (E o n +E o ff )

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IRG4PH40U
Case Outline and Dimensions — TO-247AC

N O TE S :
3 .6 5 (.1 4 3 ) -D-
5 .3 0 ( .2 0 9 ) 1 D IM E N S IO N S & T O L E R A N C IN G
1 5 .9 0 (.6 2 6 ) 3 .5 5 (.1 4 0 ) P E R A N S I Y 14 .5 M , 1 9 8 2 .
1 5 .3 0 (.6 0 2 ) 4 .7 0 ( .1 8 5 )
0 .2 5 (.0 1 0 ) M D B M 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
-B- -A- 2 .5 0 (.0 8 9 )
3 D IM E N S IO N S A R E S H O W N
1 .5 0 (.0 5 9 ) M ILL IM E T E R S (IN C H E S ).
5 .5 0 (.2 1 7) 4 4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 4 7 A C .
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 ) 5 .5 0 (.2 17 )
2X
4 .5 0 (.1 77 ) LEAD A S S IG N M E N T S
1- GATE
1 2 3 2- COLLE CTO R
3- E M IT T E R
4- COLLE CTO R
-C-
1 4 .8 0 (.5 8 3 ) 4 .3 0 (.1 7 0 )
* 1 4 .2 0 (.5 5 9 ) 3 .7 0 (.1 4 5 ) * L O N G E R L E A D E D (2 0m m )
V E R S IO N A V A IL A B LE (T O -24 7 A D )
T O O R D E R A D D "-E " S U F F IX
T O P A R T N U M B ER
2 .4 0 ( .0 9 4 ) 1 .4 0 (.0 5 6 ) 0 .8 0 (.0 3 1 )
2 .0 0 ( .0 7 9 ) 3X 3X
1 .0 0 (.0 3 9 ) 0 .4 0 (.0 1 6 )
2X
0 .2 5 (.0 1 0 ) M C A S 2 .6 0 ( .1 0 2 )
5 .4 5 (.2 1 5 ) 2 .2 0 ( .0 8 7 )
3 .4 0 (.1 3 3 )
2X 3 .0 0 (.1 1 8 )

CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)


D im e n s ion s in M illim e te rs a n d (In c h es )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 7/00

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/