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2N5088, 2N5089

Amplifier Transistors
NPN Silicon

Features
• Pb−Free Packages are Available* http://onsemi.com

3 COLLECTOR

MAXIMUM RATINGS 2
BASE
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO Vdc
1 EMITTER
2N5088 30
2N5089 25
Collector − Base Voltage VCBO Vdc
2N5088 35
TO−92
2N5089 30
CASE 29
Emitter − Base Voltage VEBO 3.0 Vdc STYLE 1
Collector Current − Continuous IC 50 mAdc
12 1
Total Device Dissipation @ TA = 25°C PD 625 mW 2
3 3
Derate above 25°C 5.0 mW/°C
STRAIGHT LEAD BENT LEAD
Total Device Dissipation @ TC = 25°C PD 1.5 W BULK PACK TAPE & REEL
Derate above 25°C 12 mW/°C AMMO PACK

Operating and Storage Junction TJ, Tstg −55 to +150 °C


MARKING DIAGRAM
Temperature Range

THERMAL CHARACTERISTICS
2N
Characteristic Symbol Max Unit 508x
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W AYWW G
(Note 1) G

Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W


Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended x = 8 or 9
Operating Conditions is not implied. Extended exposure to stresses above the A = Assembly Location
Recommended Operating Conditions may affect device reliability. Y = Year
1. RqJA is measured with the device soldered into a typical printed circuit board. WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Device Package Shipping †
2N5088G TO−92 5000 Units/Bulk
(Pb−Free)
2N2088RLRAG TO−92 2000/Tape & Reel
(Pb−Free)

2N5089G TO−92 5000 Units/Bulk


(Pb−Free)

2N2089RLRE TO−92 2000/Tape & Reel

*For additional information on our Pb−Free strategy and soldering details, please †For information on tape and reel specifications,
download the ON Semiconductor Soldering and Mounting Techniques including part orientation and tape sizes, please
Reference Manual, SOLDERRM/D. refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2007 1 Publication Order Number:


March, 2007 − Rev. 4 2N5088/D
2N5088, 2N5089

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)


Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 2N5088 30 −
2N5089 25 −
Collector −Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 mAdc, IE = 0) 2N5088 35 −
2N5089 30 −
Collector Cutoff Current ICBO nAdc
(VCB = 20 Vdc, IE = 0) 2N5088 − 50
(VCB = 15 Vdc, IE = 0) 2N5089 − 50
Emitter Cutoff Current IEBO nAdc
(VEB(off) = 3.0 Vdc, IC = 0) − 50
(VEB(off) = 4.5 Vdc, IC = 0) − 100
ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 100 mAdc, VCE = 5.0 Vdc) 2N5088 300 900
2N5089 400 1200

(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5088 350 −


2N5089 450 −

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2) 2N5088 300 −


2N5089 400 −
Collector −Emitter Saturation Voltage VCE(sat) − 0.5 Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)

Base −Emitter On Voltage VBE(on) − 0.8 Vdc


(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product fT 50 − MHz
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector−Base Capacitance Ccb − 4.0 pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Emitter−Base Capacitance Ceb − 10 pF


(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Small−Signal Current Gain hfe −


(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N5088 350 1400
2N5089 450 1800
Noise Figure NF dB
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) 2N5088 − 3.0
2N5089 − 2.0
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

RS
in

en
IDEAL
TRANSISTOR

Figure 1. Transistor Noise Model

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2N5088, 2N5089

NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)

NOISE VOLTAGE
30 30
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
20 20
IC = 10 mA RS ≈ 0 RS ≈ 0
en , NOISE VOLTAGE (nV)

en , NOISE VOLTAGE (nV)


3.0 mA f = 10 Hz
10 10
100 Hz
1.0 mA
7.0 7.0
10 kHz
1.0 kHz
5.0 5.0

300 mA 100 kHz


3.0 3.0
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
f, FREQUENCY (Hz) IC, COLLECTOR CURRENT (mA)

Figure 2. Effects of Frequency Figure 3. Effects of Collector Current

10 20
BANDWIDTH = 1.0 Hz
7.0
5.0
IC = 10 mA 16
In, NOISE CURRENT (pA)

3.0
NF, NOISE FIGURE (dB)

BANDWIDTH = 10 Hz to 15.7 kHz


2.0 3.0 mA
12
1.0 mA
1.0
IC = 1.0 mA
0.7 500 mA
300 mA 8.0
0.5
100 mA
0.3 100 mA
4.0 10 mA
0.2
10 mA 30 mA
RS ≈ 0
0.1 0
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz) RS, SOURCE RESISTANCE (OHMS)

Figure 4. Noise Current Figure 5. Wideband Noise Figure

100 Hz NOISE DATA


300 20
200 BANDWIDTH = 1.0 Hz IC = 10 mA
VT, TOTAL NOISE VOLTAGE (nV)

16 IC = 10 mA 3.0 mA
100 100 mA
NF, NOISE FIGURE (dB)

70 3.0 mA 1.0 mA
50 12
1.0 mA
30 300 mA
300 mA
20 30 mA 8.0
100 mA
10
10 mA
7.0 4.0 30 mA
10 mA
5.0
BANDWIDTH = 1.0 Hz
3.0 0
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS) RS, SOURCE RESISTANCE (OHMS)

Figure 6. Total Noise Voltage Figure 7. Noise Figure

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2N5088, 2N5089

4.0
h FE , DC CURRENT GAIN (NORMALIZED) 3.0
VCE = 5.0 V
2.0 TA = 125°C
25°C
1.0
−55 °C
0.7

0.5
0.4
0.3

0.2
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA)

Figure 8. DC Current Gain

1.0 −0.4

TEMPERATURE COEFFICIENT (mV/°C)


TJ = 25°C
0.8 −0.8
RθVBE, BASE−EMITTER
V, VOLTAGE (VOLTS)

0.6 VBE @ VCE = 5.0 V −1.2

0.4 −1.6 TJ = 25°C to 125°C

0.2 −2.0
−55 °C to 25°C
VCE(sat) @ IC/IB = 10
0 −2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. “On” Voltages Figure 10. Temperature Coefficients


f T, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

8.0 500

6.0 TJ = 25°C
300
Cob
C, CAPACITANCE (pF)

4.0 Ceb Cib

200
3.0 Ccb

2.0
100

VCE = 5.0 V
70
1.0 TJ = 25°C
0.8 50
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance Figure 12. Current−Gain — Bandwidth Product

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2N5088, 2N5089

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
BULK PACK 2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
V C N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
SECTION X−X R 0.115 −−− 2.93 −−−
1 N V 0.135 −−− 3.43 −−−

NOTES:
A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER
R
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
MILLIMETERS
SEATING
PLANE K DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
D G 2.40 2.80
X X J 0.39 0.50
G K 12.70 −−−
J N 2.04 2.66
P 1.50 4.00
V
C R 2.93 −−−
V 3.43 −−−
SECTION X−X
1 N STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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