TIC126 SERIES SILICON CONTROLLED RECTIFIERS

Copyright © 2000, Power Innovations Limited, UK APRIL 1971 - REVISED JUNE 2000

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12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA
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1 2 3 TO-220 PACKAGE (TOP VIEW)

Pin 2 is in electrical contact with the mounting base.
MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING TIC126D Repetitive peak off-state voltage TIC126M TIC126S TIC126N TIC126D Repetitive peak reverse voltage TIC126M TIC126S TIC126N Continuous on-state current at (or below) 70°C case temperature (see Note 1) Average on-state current (180° conduction angle) at (or below) 70°C case temperature (see Note 2) Surge on-state current at (or below) 25°C case temperature (see Note 3) Peak positive gate current (pulse width ≤ 300 µs) Peak gate power dissipation (pulse width ≤ 300 µs) Average gate power dissipation (see Note 4) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL VRRM VDRM SYMBOL VALUE 400 600 700 800 400 600 700 800 12 7.5 100 3 5 1 -40 to +110 -40 to +125 230 A A A A W W °C °C °C V V UNIT

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C. 2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate linearly to zero at 110°C. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 4. This value applies for a maximum averaging time of 20 ms.

PRODUCT

INFORMATION
1

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

Voltage sensing-contacts.2 100 mA 40 1.TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 .5 V UNIT mA mA mA 5: This parameter must be measured using pulse techniques.4 62.5 1.8 IG = 0 RL = 100 Ω RL = 100 Ω TEST CONDITIONS TC = 110°C TC = 110°C tp(g) ≥ 20 µs TC = .2 mm from the device body. tp = 300 µs.40°C RL = 100 Ω TC = 110°C 0. are located within 3.5 UNIT °C/W °C/W PRODUCT 2 INFORMATION . thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.40°C 8 MIN TYP MAX 2 2 20 2. separate from the current carrying contacts. duty cycle ≤ 2 %.4 V V/µs RL = 100 Ω 0.REVISED JUNE 2000 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM IRRM IGT Repetitive peak off-state current Repetitive peak reverse current Gate trigger current VD = rated VDRM VR = rated VRRM VAA = 12 V VAA = 12 V tp(g) ≥ 20 µs VGT Gate trigger voltage VAA = 12 V tp(g) ≥ 20 µs VAA = 12 V tp(g) ≥ 20 µs VAA = 12 V IH Holding current Initiating IT = 100 mA VAA = 12 V Initiating IT = 100 mA VT dv/dt NOTE On-state voltage Critical rate of rise of off-state voltage IT = 12 A VD = rated VD (see Note 5) IG = 0 TC = 110°C 400 TC = .

1 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100 Figure 3. TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION 10 Rθ JC(t) .Continuous On-State Current . PRODUCT INFORMATION 3 .Peak Half-Sine-Wave Current .W 16 IT(AV) .TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 .Max Continuous Anode Power Dissipated . SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION 100 ITM .A 14 Continuous DC 12 10 8 6 4 0° 2 0 30 180° Φ Conduction Angle 40 50 60 70 80 90 100 110 Φ = 180º TI03AE MAX ANODE POWER LOSS vs ON-STATE CURRENT 100 TJ = 110°C TI03AF 10 1 0·1 0·1 1 10 100 TC .A Figure 1.A TI03AG Figure 2.Transient Thermal Resistance . Figure 4.Case Temperature .°C IT .Maximum Average On-State Current .°C/W TI03AH 10 1 TC ≤ 70°C No Prior Device Conduction Gate Control Guaranteed 1 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100 0.REVISED JUNE 2000 THERMAL INFORMATION AVERAGE ON-STATE CURRENT DERATING CURVE PA .

A Figure 7.°C ITM .Case Temperature .°C Figure 5.V RL = 100 Ω tp(g) ≥ 20 µs 10 0·8 0·6 0·4 VAA =12 V 0·2 RL = 100 Ω tp(g) ≥ 20 µs 1 -50 -25 0 25 50 75 100 125 0 -50 -25 0 25 50 75 100 125 TC .Gate Trigger Voltage .mA 1·5 10 1 0·5 1 -50 -25 0 25 50 75 100 0 0·1 1 10 100 TC .Case Temperature .Peak On-State Voltage .Peak On-State Current . HOLDING CURRENT vs CASE TEMPERATURE 100 TC03AD Figure 6.Holding Current .V 125 VAA = 12 V Initiating IT = 100 mA IH . PRODUCT 4 INFORMATION . Figure 8.REVISED JUNE 2000 TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs CASE TEMPERATURE TC03AA GATE TRIGGER VOLTAGE vs CASE TEMPERATURE 1 TC03AB VAA = 12 V IGT . PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT 2·5 TC = 25 °C tp = 300 µs 2 Duty Cycle ≤ 2 % TC03AH VTM .TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 .Gate Trigger Current .mA VGT .Case Temperature .°C TC .

40 0.54 6.64 0.REVISED JUNE 2000 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. TO-220 4.4 10. The compound will withstand soldering temperature with no deformation.28 4.07 14.0 2.68 2.70 4.55 1. Leads require no additional cleaning or processing when used in soldered assembly.90 2.23 18.1 5.71 10. PRODUCT INFORMATION 5 .66 1 2 3 1.96 3.97 0.TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 .6 0.32 14. and circuit performance characteristics will remain stable when operated in high humidity conditions.1 12. 6.6 6.20 ø 3.47 1.34 5.0 15.7 2.95 2.41 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab.0 TYP.74 2.32 1.

that the information being relied on is current. Nor is any license. or process in which such semiconductor products or services might be or are used. design right. DEVICES OR SYSTEMS. either express or implied. granted under any patent right. and advises its customers to verify. software performance. Specific testing of all parameters of each device is not necessarily performed.REVISED JUNE 2000 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice. Copyright © 2000. PI accepts no liability for applications assistance. copyright. or other intellectual property right of PI covering or relating to any combination. AUTHORIZED.TIC126 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 . machine. Power Innovations Limited PRODUCT 6 INFORMATION . OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS. except as mandated by government requirements. or infringement of patents or services described herein. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. INTENDED. before placing orders. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. customer product design. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED.

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