SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6439/D

The RF Line

NPN Silicon RF Power Transistor
. . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.8 dB @ 400 MHz • Built–In Matching Network for Broadband Operation Using Double Match Technique • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications

2N6439

60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON

CASE 316–01, STYLE 1

MAXIMUM RATINGS*
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO PD Tstg Value 33 60 4.0 146 0.83 –65 to +200 Unit Vdc Vdc Vdc Watts W/°C °C

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.2 Unit °C/W

ELECTRICAL CHARACTERISTICS* (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 33 60 4.0 — — — — — — — — 2.0 Vdc Vdc Vdc mAdc

NOTE: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. * Indicates JEDEC Registered Data.

1

0–40 pF C5 to C8 — 33 pF C9 — 1000 pF C10 — 5. L4 C9 C10 VCC = 28 V Figure 1.8 8. 400 MHz Test Amplifier (Narrow Band) 2 .D. VCC = 28 Vdc. L2 — 3/16″ x 1″ Copper Strap L3 — 1.0 µF R1 — 15 Ω L1. 5/16″ I. GPE η 7.0 Vdc) hFE 10 — 100 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc. IE = 0.8 55 10 — — — dB % C8 C5 C1 L1 C7 C11 C2 L3 C6 L5 DUT L2 C4 C3 R1 C1 to C4.5 — dB — NARROW BAND FUNCTIONAL TESTS (Figure 1) Common–Emitter Amplifier Power Gain (VCC = 28 Vdc. f = 400 MHz) * Indicates JEDEC Registered Data.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 1. C11 — 4. f = 400 MHz) Collector Efficiency (VCC = 28 Vdc. f = 400 MHz.5 µH L4 — 10 µH L5 — 1 Turn #16 AWG.0 Adc. VSWR 30:1 all phase angles) GPE ψ No Degradation in Output Power 7. Pout = 60 W. Pout = 60 W. f = 1. VCE = 5. Pout = 60 W. f = 225–400 MHz) Electrical Ruggedness (Pout = 60 W.ELECTRICAL CHARACTERISTICS* — continued (TC = 25°C unless otherwise noted.0 MHz) Cob — 67 75 pF BROADBAND FUNCTIONAL TESTS (Figure 6) Common–Emitter Amplifier Power Gain (VCC = 28 Vdc.

SUPPLY VOLTAGE (VOLTS) 26 30 Figure 6. Output Power versus Input Power 12 G PE . COMMON EMITTER AMPLIFIER POWER GAIN (dB) Pout = 60 W VCC = 28 V 100 Pout . OUTPUT POWER (WATTS) f = 225 MHz 80 Pin = 8 W 60 4W 40 20 0 10 14 18 22 VCC. SUPPLY VOLTAGE (VOLTS) 26 30 Figure 4. FREQUENCY (MHz) 400 450 0 2 4 6 8 10 12 14 Pin. Output Power versus Supply Voltage 100 Pout .NARROW BAND DATA 100 Pout . FREQUENCY (MHz) 400 450 14 18 22 VCC. Power Gain versus Frequency Figure 5. OUTPUT POWER (WATTS) 80 60 40 20 0 200 VCC = 28 V Pin = 8 W 6W 4W 120 Pout . OUTPUT POWER (WATTS) f = 400 MHz 80 Pin = 6 W 60 40 20 0 10 4W 11 10 9 8 200 250 300 350 f. INPUT POWER (WATTS) 16 18 20 Figure 2. Pout versus Frequency Figure 3. Output Power versus Supply Voltage 3 . OUTPUT POWER (WATTS) 100 80 60 40 20 VCC = 28 V f = 225 MHz 400 MHz 2W 250 300 350 f.

1/4 W L1 — 10 Turns. C15 — 680 pF C14. L3 — 6 Turns. #22 AWG. C7 — 51 pF C9 — 1.D. 1 turn R1 — 11 Ω. 1/8″ I. FREQUENCY (MHz) 400 Figure 8. C4.1 µF.0–10 pF JOHANSON C12 — 100 pF C13. L4. C8. T2 — 25 Ohms (UT25) Miniature Coaxial Cable. Feroxcube VK200 19/4B B — Ferroxcube 56-590-65/4B Ferrite Bead T1. C11 — 10 pF C6. FREQUENCY (MHz) 400 200 250 300 350 f. Power Gain versus Frequency Figure 9. C10 — 27 pF C3. POWER GAIN (dB) 20 0 200 250 300 350 f. Efficiency versus Frequency 4 .031″ Thick Teflon-Fiberglass Figure 7.0 µF.D.D. 1/8″ I.0 W R2 — 20 Ω. L5 — 1″ x 0. 35 V Tantalum C17 — 0.5″ C8 C11 4:1 RFC1 C14 C16 C15 VCC C12 T2 50 Ω LINE 4:1 C2 C9 C10 A L3 R2 C17 C1 — 68 pF C2. Figure 7) 10 8 6 4 2 0 EFFICIENCY (%) Pout = 60 W VCC = 28 V 100 80 60 40 Pout = 60 W VCC = 28 V G PE . C16 — 1.R1 B C13 + L1 L2 DUT 50 Ω LINE T1 C1 L4 0. 1/4″ I. ERIE Red Cap RFC1 — Ferrite Bead Choke. 225 to 400 MHz Broadband Test Circuit Schematic BROADBAND DATA (Circuit. C5. #16 AWG. L2 — 4 Turns.25″ Microstrip Line Board Material 0. 1. #24 AWG.8″ C3 C4 C5 C6 C7 A L5 0.

1 .3 Pout = 60 W VCC = 28 V 0.6 ZOL* OHMS 2.2 + j0.9 + j2.1 Zin 275 Pout = 60 W.0 + j0.7 + j1.2 400 ZOL* 450 450 f = 225 MHz 0.6 5 INPUT VSWR 4 . voltage and frequency.1 .9 + j0. FREQUENCY (MHz) 400 275 350 400 FREQUENCY MHz ZOL* = Conjugate of the optimum load 225 ZOL* = impedance into which the device 275 ZOL* = output operates at a given output 350 ZOL* = power.8 2.j0.6 0. Series Equivalent Input-Output Impedance 5 .1 1.j1.6 0. Input VSWR versus Frequency Figure 11.9 2.1 0. VCC = 28 V 350 3 2 1 200 250 300 350 f.1 2.j0.2 1.2 2. 400 450 f = 225 MHz Zin OHMS 0.2 .2 + j2.5 + j1.9 Figure 10.

92 3.495 K 1 Q 2 L B J E N H A U C EMITTER COLLECTOR EMITTER BASE CASE 316–01 ISSUE D Specifications subject to change without notice.04 5.81 4.200 0.58 2.05 3.115 0. 3.33 18. INCHES MIN MAX 24. Fax+44 (1344) 300 020 Visit www.81 4.com for additional data sheets and product information.730 0.150 0.160 0.490 0.470 0.150 0.17 3.120 0.57 MILLIMETERS MIN MAX 0.31 2.170 0. Fax +81-44-844-8298 n Europe: Tel.300 0.15 10.30 11. DIM A B C D E F H J K L N Q R U STYLE 1: PIN 1.62 5.33 5.95 5.16 3.004 0.960 0.440 0.38 25.720 0.130 0.14 12.PACKAGE DIMENSIONS D R F 4 3 NOTES: 1.10 0.29 18.120 0.94 12.54 0. 2.macom. Fax (800) 618-8883 n Asia/Pacific: Tel.210 0. (800) 366-2266. 6 .405 0.235 0.210 0.08 5. +44 (1344) 869 595.30 3.990 0.220 0.085 0.130 0.97 7.006 0. 4.45 12. n North America: Tel. FLANGE IS ISOLATED IN ALL STYLES.29 11.06 3.+81-44-844-8296.510 0.