B.E/B.Tech.

DEGREE EXAMINATION, NOVEMBER/DECEMBER 2010
Second Semester

EC 2151 ± ELECTRIC CIRCUITS AND ELECTRON DEVICES
(Regulation 2008)

Time: Three hours Answer ALL questions PART - A ± (10 2 = 20 Marks)

Maximum: 100 Marks

1.

Find Req of the resistive network shown in Fig.1 below.

2.

Determine the current drawn by the source as shown in Fig.2

3.

For the circuit shown in fig.3 determine the value of Q at resonance and bandwidth of the circuit.

B ± (5 11. 5. Determine voltage across resistor and capacitor. 10. 6.4.1F as shown in Fig. Define diffusion capacitance. A constant voltage of 20V is applied to the circuit at t= 0.6 by using superposition theorem. Mention the advantages of MOSFET over JFET. PART . A series RC circuit consists of resistor of 10Ÿ and a capacitor of 0. 9. State Mass-Action law. (8) . 7. Draw the two transistor model of an SCR with its characteristics curve. (8) (ii) Find the voltage across 2Ÿ resistor in Fig. Define Base width modulation and bring out its consequences. Under what principle does a photo voltaic cell work? Give its diagram. 16 = 80 Marks) (a) (i) Use Thevenin¶s theorem to find the current through 5Ÿ resistor in the Fig. 8.4.5 shown.

If the switch is closed when =30°. Determine the current equation. and k=0. 2.10 and determine 1.5H and C= 200 µF. Resonant frequency Output voltage at resonance and Maximum output voltage. Assume Rs >>wrL. (a) (i) Find the complete solution for the current in a RLC circuit for sinusoidal input. (8) (ii) Determine the maximum power delivered to the load in the circuit shown in Fig. (8) (ii) The circuit shown in Fig. 3. L= 0.7 using Norton theorem.9 consists of R = 10Ÿ. (8) Or (b) (i) Consider the single tuned circuit shown in Fig.Or (b) (i) Determine current flowing through the 15Ÿ resistor in the circuit shown in Fig.9 (8) .8. 12.

(a) (i) State continuity equation and prove that concentration of changes is independent of time with zero electric field. (a) Discuss the construction and operation of a Tunnel diode with neat energy band diagram. obtain gain of a double tuned amplifier with critical value of mutual inductance.(ii) With neat diagram. (16) 15. (8) (ii) With neat diagram. Or (b) Explain the operation of a Depletion mode MOSFET and its comparison over (16) enhancement MOSFET with neat diagrams. (ii) Write detailed notes on space charge and diffusion capacitance. (a) Explain the construction and working principle of a JFET and obtain its characteristic parameter. Or (b) (i) What is the breakdown mechanism found in Zener diode? Explain it with neat diagram. (8) (8) (8) 14. (8) 13. explain the formation of PN junction and derive its depletion width. Or (b) Write detailed notes on: (i) DIAC and TRIAC (ii) Photodiode and Phototransistor (iii)LED and LCD (5) (5) (6) (16) .

4.B ± (5 11. What is meant by photovoltaic cell? PART .2. mention one application. 10.B. 3. 16 = 80 Marks) (8) (8) (a) (i) State Thevenin¶s and superposition theorems. 6. Give some applications of tunnel diode.Tech. 8. 7. What is ³Early effect´ in CB configuration and give its consequences? Distinguish clearly the difference between N with P channel FET¶s. MAY/JUNE 2010 Second Semester EC 2151 ± ELECTRIC CIRCUITS AND ELECTRON DEVICES (Regulation 2008) Time: Three hours Answer ALL questions PART . 9. 2.1 5. What is quality factor? Find the resonant frequency in the ideal parallel LC circuit shown in Fig. 2 = 20 Marks) Maximum: 100 Marks State Kirchhoff¶s current law and voltage law. (ii) Find the Thevenin¶s equivalent of the circuit shown in Fig.A ± (10 1.E/B. Define avalanche break down. Or . DEGREE EXAMINATION. Give the expression for transition capacitance and diffusion capacitance of a PN diode. State Superposition theorem.

determine the complete solution for the current when the switch is closed at t= 0. find the power delivered to it. (12) (1) (2) (3) If Rout = 3KŸ.5 is 104 rad/sec.01Ÿ.2H and capacitance C = 3µF. resistance R = 15Ÿ. (6) . (16) Or (b) (i) The tuned frequency of a double tuned circuit shown in Fig.(b) (i) Consider the circuit in Fig.3.1Ÿ and L2= 25µH. R2= 0. What is the maximum power that can be delivered to any Rout? What two different values of Rout will have exactly 20mW delivered to them? (4) (ii) State maximum power transfer theorem.4. (a) In the circuit shown in Fig. 12.1Ÿ. Applied voltage is v(t) = 400cos(500t + ). inductance L = 0. If the source voltage is 2V and has a resistance of 0. calculate the maximum output voltage at resonance if R1= 0. L1= 2µH.

(a) (i) Derive the diode current equation. (16) (16) . (a) Explain the input and output characteristics of a common emitter configuration with a neat sketch. Or (b) (i) Draw the Zener diode characteristics and explain the working of Zener diode. Or (b) What is MOSFET? Explain the construction and working principle of enhancement mode and depletion mode MOSFET with a neat diagram.(ii) Explain (using the relevant circuit) the double tuned circuit and derive the expression for A and Mc. (ii) Explain how the depletion region at a p-n junction is formed and explain with (8) relevant sketches for charge density. output regulation. electric field intensity and potential energy barriers at the junction. (10) 13. (8) (8) (ii) Draw the Zener regulation circuit and explain its function for input regulation and (8) 14. (16) (16) 15. (a) What is tunneling phenomenon? Describe the V-I characteristics and concepts of tunnel diode with application. Or (b) Explain the negative resistance characteristics of Uni-junction transistor with neat sketch.

L and C where R= 10Ÿ. L= 1H and C= 1µF. Find the total collector current. = 0.A ± (10 1. 2.B. L= 40mH and C= 1µF. 7. Draw the dual network for the circuit shown below: 2 = 20 Marks) Maximum: 100 Marks 3. 10. In a common base connection. DEGREE EXAMINATION. NOVEMBER/DECEMBER 2009 Second Semester EC 2151 ± ELECTRIC CIRCUITS AND ELECTRON DEVICES (Regulation 2008) Time: Three hours Answer ALL questions PART . A coil of 20Ÿ resistance has an inductance of 0. 4. Find the quality factor. 5.E/B.2H and is connected in parallel with a condenser of 100µF capacitance. . (a) 16 = 80 Marks) A current source is applied to a parallel combination of R. Mention the disadvantage of JFET compared to BJT. How is turn-off¶ of SCR made? PART .B ± (5 11.92. Find the Q factor of an RLC series circuit given by R= 5Ÿ. 9.Tech. Briefly explain why SCR cannot be used as a bidirectional switch. Why does reverse saturation current vary with temperature in diodes? Define forbidden gap. ICBO = 50µA. the emitter current is 1mA. 6. Calculate the frequency at which the circuit will act as a non-inductive resistance of R ohms. (i) (ii) Compute the resonant frequency. 8. State maximum power transfer theorem.

Determine (i) (ii) (iii) the time constant of circuit the voltage across and the current in the inductance at t= 0 and t The voltage V(t) of the inductance for t > 0. It is converted into an extrinsic semiconductor with a doping concentration of 1020/cm3. (4 4 = 16) Or (b) A network having Thevenin¶s equivalent of voltage Eg in series with Rg supplies a load of RL through a transmission line of resistance RT. (16) 12. L= 0. (iv) Minority carrier concentration when its temperature is increased to a value at which the intrinsic carries concentration ni doubles. Or (4 4 = 16) . Or (16) (b) A constant current source of 10A is suddenly applied at t= 0 on RL parallel circuit with R= 100Ÿ and L= 1H. Find the expression for the transient current assuming initially relaxed conditions.(iii) Calculate the value of the bandwidth.5x 1016/cm3 and 2x103 Ÿím respectively. (iv) Compute the lower and upper frequency points of the bandwidth. (a) In a semiconductor at room temperature (300K) the intrinsic carrier concentration and resistivity are 1. Constant voltage of 100V is impressed upon the circuit at t= 0. If Eg = 100 volts. For the extrinsic semiconductors calculate the (i) (ii) Minority carrier concentration Resistivity (iii) Shift in fermilevel due to doping.2H and C= 50µF. (2) (8) (6) 13. Assume the mobility of majority and minority carriers to be the same and KT = 26 meV at room temperature. determine the value of RT so that the power transferred to the load is maximum. ’. (a) A series RLC circuit has R= 50Ÿ. Rg = 20Ÿ and RL = 10Ÿ.

working. Compare their parameters and performances. CB and CC configurations. (16) (16) 15. (6) (5) (5) (16) (iii) LED. Explain its construction. . (ii) Zener diode and its characteristics. Or (b) Discuss the following: (i) (ii) CCD. (a) Present the circuit and explain the structure. Or (b) Draw the circuit and explain the operation and characteristics of Enhancement and Depletion mode MOSFETs. Phototransistor. (a) Draw the circuit. (8) (8) 14. and the equivalent circuit of SCR.(b) Explain the following: (i) Space charge and diffusion capacitances. characteristics. advantages and applications. operation and characteristics of CE.

7.A ± (10 1.Tech.E/B. 6. What is clipper? List the various types of clipper. What is large signal current gain? Compare any four salient features of BJT with JFET. DEGREE EXAMINATION. State maximum power transfer theorem. 2 = 20 Marks) Maximum: 100 Marks Draw the equivalent circuit with the voltage source between terminals A and B. MAY/JUNE 2009 Second Semester EC 2151 ± ELECTRIC CIRCUITS AND ELECTRON DEVICES (Regulation 2008) Time: Three hours Answer ALL questions PART . 2. 8. 4. 9. Calculate the effective value of steady state current and relative phase angle. 5. What is selectivity? Define transition capacitance. 10.B. A 50 Hz sinusoidal voltage V=311 sin t is applied to a RL series circuit. Draw the equivalent circuit of tunnel diode. What is intrinsic stand-off ratio? . 3.02H. If the magnitude of resistance is 5Ÿ and that of inductance is 0.

Calculate the power consumed.B ± (5 16 = 80 Marks) 11. Determine the current supplied by the voltage source in the given circuit. (6) .star conversion to find resistance between terminals AB¶ of the circuit shown.PART . (16) (b) (i) State and explain Kirchoff¶s laws. (10) (ii) Find the currents in all the resistors by superposition theorem in the circuit shown. (a) Use delta.

(8) (8) 14. (ii) Define and compare . (ii) Define and derive the drift and diffusion currents. (16) (10) (6) . (a) Explain the construction and operation of LCD.12. (a) Derive the PN diode current equation from the quantitative theory of diode currents. (b) (i) Draw and explain the two transistor equivalent model of SCR.I characteristics of TRIAC. (a) Explain. explain the operation of Zener voltage regulator. (16) 13. Or (b) (i) Explain the CE configuration of BJT in detail with required diagrams. operation and also the characteristics of enhancement MOSFET differ from depletion MOSFET. and . Derive the steady state current for the same. Or (b) (i) With a neat circuit diagram. (ii) Draw and explain V. (a) Explain the parallel resonance of RLC circuits and derive the Q factor of the same. how does the construction. (16) Or (b) Discuss in detail the transient response of series RC circuit with sinusoidal excitation. (10) (6) (16) 15.

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