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APM4500

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features

N-Channel 20V/8A , RDS(ON)=22m(typ.) @ VGS=4.5V RDS(ON)=30m(typ.) @ VGS=2.5V

Pin Description
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2

P-Channel -20V/-4.3A , RDS(ON)=80m(typ.) @ VGS=-4.5V RDS(ON)=105m(typ.) @ VGS=-2.5V

SO-8

Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package
G1 G2 D1 D1 S2

Applications
S1 D2 D2

Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.

N-Channel MOSFET

P-Channel MOSFET

Ordering and Marking Information


APM4500
Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150C Handling Code TR : Tape & Reel

APM4500 K :

APM4500 XXXXX

XXXXX - Date Code

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 1 www.anpec.com.tw

APM4500
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM PD TJ TSTG RjA Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Continuous Maximum Drain Current Pulsed Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance Junction to Ambient TA=25C TA=100C

(TA = 25C unless otherwise noted)


N-Channel 20 12 8 35 2.5 1.0 150 -55 to 150 62.5 P-Channel -20 12 -4.3 -17 2.5 1.0 Unit V A W C C C/W

* Surface Mounted on FR4 Board, t 10 sec.

Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Parameter

(TA = 25C unless otherwise noted)


APM4500 Unit Min. Typ. Max. N-Ch 20 -20 1 -1 0.5 0.7 1 -1 100 100 22 30 80 105 0.8 -0.7 26 36 90 115 1.3 -1.3 V m nA

Test Condition

VGS=0V , IDS=250A VDS=16V , VGS=0V VDS=-16V , VGS=0V VDS=VGS , IDS=250A VDS=VGS , IDS=-250A VGS=12V , VDS=0V VGS=12V , VDS=0V VGS=4.5V , IDS=8A VGS=2.5V , IDS=5.2A VGS=-4.5V , IDS=-4.3A VGS=-2.5V , IDS=-2A ISD=1.7A , VGS=0V ISD=-1.25A , VGS=0V

P-Ch N-Ch P-Ch N-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch

V A V

P-Ch -0.45

RDS(ON)a

Drain-Source On-state Resistance

VSDa

Diode Forward Voltage

Notes
a

: Pulse test ; pulse width 300s, duty cycle 2%

Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003

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APM4500
Electrical Characteristics (Cont.)
Symbol Dynamicb Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance VGS=0V Output Capacitance Reverse Transfer Capacitance VDS=15V Frequency=1.0MHz N-Channel VDS=10V , IDS= 8A VGS=4.5V P-Channel VDS=-10V , IDS=-3A VGS=-4.5V N-Channel VDD=10V , IDS=1A , VGEN =4.5V , RG=0.2 P-Channel VDD=-10V , IDS=-1A , VGEN =-4.5V , RG=6 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 9 3 3 2.5 1 16 13 40 36 42 45 20 37 675 510 178 270 105 120 pF 32 21.5 75 56 78 69.5 35 57.5 ns 13 12 nC Parameter

(TA = 25C unless otherwise noted)


APM4500 Unit Min. Typ. Max.

Test Condition

Notes
b

: Guaranteed by design, not subject to production testing

Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003

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APM4500
Typical Characteristics
N-Channel MOSFET Output Characteristics
20
VGS=3,4,5,6,7,8,9,10V VGS=2.5V

Transfer Characteristics
20

ID-Drain Current (A)

ID-Drain Current (A)

16

16

12

12

VGS=2V

TJ=125C TJ=25C TJ=-55C

4
VGS=1.5V

0 0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature


1.50
IDS=250A

On-Resistance vs. Drain Current


0.06

VGS(th)-Threshold Voltage (V) (Normalized)

1.25 1.00 0.75 0.50 0.25 0.00 -50

RDS(ON)-On-Resistance ()

0.05 0.04
VGS=2.5V

0.03
VGS=4.5V

0.02 0.01 0.00

-25

25

50

75

100 125 150

10

Tj - Junction Temperature (C)

ID - Drain Current (A)

Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003

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APM4500
Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage


0.10 0.09
ID=8A

On-Resistance vs. Junction Temperature


2.00
VGS=4.5V ID=8A

RDS(ON)-On-Resistance ()

0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 1 2 3 4 5 6 7 8 9 10

RDS(ON)-On-Resistance () (Normalized)

1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50

-25

25

50

75

100 125 150

VGS - Gate-to-Source Voltage (V)

TJ - Junction Temperature (C)

Gate Charge
10
VDS=10V ID=1A

Capacitance
1000
Frequency=1MHz

VGS-Gate-Source Voltage (V)

800

Capacitance (pF)

Ciss

600

400
Coss Crss

200

12

16

20

12

16

20

QG - Gate Charge (nC)

VDS - Drain-to-Source Voltage (V)

Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003

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APM4500
Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage


20 10 60

Single Pulse Power

IS-Source Current (A)

48

Power (W)
1.2 1.4

36

TJ=150C

TJ=25C

24

12

0.1 0.0

0.2

0.4

0.6

0.8

1.0

0 0.01

0.1

10

100

VSD -Source-to-Drain Voltage (V)

Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient


2

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

D= 0.2 D= 0.1

0.1

D= 0.05

D= 0.02

SINGLE PULSE

1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=62.5C/W 3.T JM -T A =P DM Z thJA 4.Surface Mounted

0.01 1E-4

1E-3

0.01

0.1

10

100

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003

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APM4500
Typical Characteristics
P-Channel MOSFET Output Characteristics
10
-VGS=3,4.5,6,7,8V

Transfer Characteristics
10

-ID-Drain Current (A)

-ID-Drain Current (A)

-VGS=2V

4
-VGS=1.5V

4
TJ=25C TJ=-55C

2
-VGS=1V

TJ=125C

10

0 0.0

0.5

1.0

1.5

2.0

2.5

-VDS - Drain-to-Source Voltage (V)

-VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature


1.50
-IDS=250A

On-Resistance vs. Drain Current


0.16

-VGS(th)-Threshold Voltage (V) (Normalized)

RDS(ON)-On-Resistance ()

1.25 1.00 0.75 0.50 0.25 0.00 -50

0.14 0.12 0.10


-VGS=4.5V -VGS=2.5V

0.08 0.06 0.04 0.02 0 2 4 6 8 10

-25

25

50

75

100 125 150

Tj - Junction Temperature (C)

-ID - Drain Current (A)

Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003

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APM4500
Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage


0.20
-ID=4.3A

On-Resistance vs. Junction Temperature


2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4
-VGS=4.5V -ID=4.3A

RDS(ON)-On-Resistance ()

0.16 0.14 0.12 0.10 0.08 0.06 0.04 1 2 3 4 5 6 7 8

RDS(ON)-On-Resistance () (Normalized)

0.18

0.2 -50

-25

25

50

75

100 125 150

-VGS - Gate-to-Source Voltage (V)

TJ - Junction Temperature (C)

Gate Charge
5

Capacitance
800 700
Frequency=1MHz

-VGS-Gate-Source Voltage (V)

-VDS=10V -ID=3A

Capacitance (pF)

600
Ciss

500 400 300 200


Coss

1
Crss

10

100

10

15

20

QG - Gate Charge (nC)

-VDS - Drain-to-Source Voltage (V)

Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003

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APM4500
Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage


10 14 12

Single Pulse Power

-IS-Source Current (A)

10

Power (W)
1.4 1.6

8 6 4 2

TJ=150C

TJ=25C

1 0.0

0.2

0.4

0.6

0.8

1.0

1.2

0 0.01

0.1

10

100

-VSD -Source-to-Drain Voltage (V)

Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient


Normalized Effective Transient Thermal Impedance

1
Duty Cycle=0.5

D=0.2 D=0.1

0.1

D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=R thJA=62.5C/W 3.T JM-T A=P DMZ thJA SINGLE PULSE

D=0.01

0.01 1E-4

1E-3

0.01

0.1

10

100

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003

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APM4500
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)

e1 D

e2

A1

1 L

0.004max.

Dim A A1 D E H L e1 e2 1

Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013

0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8

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APM4500
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition

(IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999


temperature

Peak temperature

183C Pre-heat temperature

Time

Classification Reflow Profiles


Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max. 60 seconds 215-219C or 235 +5/-0C 10 C /second max.

Package Reflow Conditions


pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003

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APM4500
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles

Carrier Tape & Reel Dimensions


E Po P P1 D

Bo

Ao

D1 T2

Ko

J C A B

T1

Application

A 330 1

B 62 +1.5 D

C 12.75+ 0.15 D1

J 2 0.5 Po

T1 12.4 0.2 P1 2.0 0.1

T2 2 0.2 Ao 6.4 0.1

W 12 0. 3 Bo 5.2 0. 1

P 8 0.1 Ko

E 1.750.1 t

SOP- 8

F 5.5 1

1.55 +0.1 1.55+ 0.25 4.0 0.1

2.1 0.1 0.30.013

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APM4500
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500

Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369

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