You are on page 1of 9

VISHAY

TDSG / O / Y11..
Vishay Semiconductors

Standard 7- Segment Display 7 mm

Description
The TDS.11.. series are 7 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance up to 3 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum on-off contrast. All displays are categorized in luminous intensity groups. That allows users to assemble displays with uniform appearence. Typical applications include instruments, panel meters, point-of-sale terminals and household equipment.

19235

e4 Pb
Pb-free

Features
• • • • • • • • Evenly lighted segments Grey package surface Untinted segments Luminous intensity categorized Yellow and green categorized for color Wide viewing angle Suitable for DC and high peak current Lead-free device

Applications
Panel meters Test- and measure- equipment Point-of-sale terminals Control units

Parts Table
Part TDSO1150 TDSO1160 TDSY1150 TDSG1150 TDSG1160 Color, Luminous Intensity Orange red Orange red Yellow Green Green Common anode Common cathode Common anode Common anode Common cathode Circuitry

Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified TDSO1150/1160 , TDSY1150 , TDSG1150/1160 Parameter Reverse voltage per segment or DP DC forward current per segment or DP TDSO1150 TDSO1160 TDSY1150 TDSG1150 TDSG1160 Test condition Part Symbol VR IF IF IF IF IF Value 6 17 17 17 17 17 Unit V mA mA mA mA mA

Document Number 83124 Rev. 1.4, 31-Aug-04

www.vishay.com 1

4 3 nm nm deg V V 6 15 IVmin and IV groups are mean www. Vishay Semiconductors Parameter Surge forward current per segment or DP Test condition tp ≤ 10 µs (non repetitive) Part TDSO1150 TDSO1160 TDSY1150 TDSG1150 TDSG1160 Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance LED junction/ambient t ≤ 3 sec. unless otherwise specified Orange red TDSO1150/1160 Parameter (digit average) 1) Test condition Symbol IV λd λp ϕ VF VR Min 450 612 Typ.15 0. 31-Aug-04 .. Max Unit µcd Luminous intensity per segment IF = 10 mA Dominant wavelength Peak wavelength Angle of half intensity Forward voltage per segment or DP Reverse voltage per segment or DP 1) IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 µA 625 630 ±50 2 3 nm nm deg V V 6 15 IVmin and IV groups are mean Yellow TDSY1150 Parameter (digit average) 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage per segment or DP Reverse voltage per segment or DP 1) Test condition Symbol IV λd λp ϕ VF VR Min 450 581 Typ.15 0.15 0.TDSG / O / Y11.4. 2mm below seating plane Tamb ≤ 45°C Symbol IFSM IFSM IFSM IFSM IFSM PV Tj Tamb Tstg Tsd RthJA Value 0.com 2 Document Number 83124 Rev.vishay.15 0. Max Unit µcd Luminous intensity per segment IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 µA 594 585 ±50 2.15 400 100 -40 to + 85 -40 to + 85 260 140 VISHAY Unit A A A A A mW °C °C °C °C K/W Optical and Electrical Characteristics Tamb = 25 °C. 1.

Ambient Temperature ( ° C ) Figure 2. Rel. 31-Aug-04 www. Forward Voltage Figure 4.VISHAY Green TDSG1150/1160 Parameter (digit average) 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage per segment or DP Reverse voltage per segment or DP 1) TDSG / O / Y11.Forward Current ( mA ) 1.4 0. Luminous Intensity vs.com 3 . Vishay Semiconductors Test condition Symbol IV λd λp ϕ VF VR Min 450 562 Typ. Angular Displacement I v rel .8 0.Relative Luminous Intensity 10 ° 20 ° 30° 400 40° 1.Relative Luminous Intensity 1000 I F ..Power Dissipation ( mW ) I V rel .2 Red 100 10 0. Ambient Temperature Document Number 83124 Rev.9 0.0 0.2 0 0. Luminous Intensity vs.6 0.Ambient Temperature (° C ) 95 10082 Figure 1.4.6 Red 1. Max Unit µcd Luminous intensity per segment IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 µA 575 565 ±50 2.Forward Voltage ( V ) 95 10087 T amb .6 300 200 100 0 0 20 40 60 80 100 95 11479 Tamb .7 50° 60° 70° 80° 0. 1.4 3 nm nm deg V V 6 15 IVmin and IV groups are mean Typical Characteristics (Tamb = 25 °C unless otherwise specified) 0° 500 PV . Forward Current vs. Rel.2 0.8 1 t p /T = 0.4 0.1 95 10086 V F .001 t p = 10 µs 0 2 4 6 8 10 0. Ambient Temperature Figure 3.vishay.4 I F = 10 mA 0 0 20 40 60 80 100 0. Power Dissipation vs.

05 500 I F (mA) 0. Relative Luminous Intensity vs.Relative Luminous Intensity I v rel .001 t p = 10 µs 10 1 0.Relative Luminous Intensity VISHAY 1000 I F .01 1 95 10089 0 10 I F .6 1.4 0 610 630 650 670 690 95 10260 10 1 20 0.02 tp /T 95 10090 λ .1 200 0.Relative Luminous Intensity 10 Red 1 1. Ambient Temperature I v rel .2 0.05 500 I F (mA) 0.4 0.Relative Luminous Intensity 1.Forward Current ( mA ) Red 2.8 0.com 4 Document Number 83124 Rev.Wavelength ( nm ) Figure 7.4. 1. Current/Duty Cycle www.2 100 0. 0 10 20 0.2 0. Forw.6 1. Rel. Intensity vs. Forward Voltage I v rel .Forward Voltage ( V ) Figure 5. const. Forward Current vs.. Intensity vs. Relative Intensity vs. Vishay Semiconductors 2. Luminous Intensity vs.1 0.4 I FAV = 10 mA.Ambient Temperature ( °C ) Figure 6. Current/Duty Cycle Figure 8.2 0 590 I v rel . Lumin. Forw.6 Yellow 1.8 0. Wavelength Figure 10. Rel.4 0. Lumin.6 0.8 0.02 tp /T Yellow 100 t p /T = 0.8 0.TDSG / O / Y11.0 1.4 Yellow 2.2 100 0.2 2.1 200 0.1 0 95 10030 2 4 6 8 10 95 10088 1 V F .4 I v rel . Forward Current Figure 9.2 0.Relative Luminous Intensity Red 1.5 50 0.Forward Current ( mA ) 100 95 10031 I F = 10 mA 0 20 40 60 80 100 Tamb .vishay.0 0. 31-Aug-04 .5 50 0. Rel.0 1.

VISHAY TDSG / O / Y11.Forward Voltage ( V ) Figure 13. Vishay Semiconductors I v rel . Rel. Relative Luminous Intensity vs. Forward Current 1000 Green 100 t p /T = 0. Forward Current vs.4.2 0 550 95 10039 λ .2 0.Ambient Temperature ( ° C ) Figure 11.8 0.01 1 95 10033 10 I F . Forward Voltage Figure 16.Relative Luminous Intensity 10 Yellow 1 1.Wavelength ( nm ) - 10 1 20 0.5 50 0.1 200 0.Relative Luminous Intensity I v rel .4 0..8 0.6 Green 1.4 Yellow Green 2. Wavelength Figure 15.Forward Current ( mA ) 100 V F .0 0. 31-Aug-04 www.2 0.4 0 570 590 610 630 650 95 10263 1. Forward Current Document Number 83124 Rev.Relative Luminous Intensity I F .6 1.02 tp/T Figure 12.0 1.1 0 95 10034 2 4 6 8 10 95 10037 1 10 I F .Relative Luminous Intensity I v rel . Forward Current Figure 14. Relative Luminous Intensity vs.4 I F = 10 mA 0 0.05 500 IF(mA) 0. 1.8 0.Specific Luminous Intensity 2.6 0.vishay.Forward Current ( mA ) 10 Green 1 0.1 0.com 5 .001 t p = 10 µs 10 I v rel .Forward Current ( mA ) 100 95 10035 0 20 40 60 80 100 T amb .1 1 0. Ambient Temperature 1.2 IVrel . Relative Intensity vs. Luminous Intensity vs.2 100 0. Specific Luminous Intensity vs.

TDSG / O / Y11. Vishay Semiconductors VISHAY 1.Relative Luminous Intensity Green 1. 1. 31-Aug-04 .Wavelength ( nm ) - Figure 17.6 f 0.8 0.0 10 0.4..2 IVrel . Relative Intensity vs.4 0.vishay.com 6 Document Number 83124 Rev. Wavelength Package Dimensions in mm 95 11342 www.2 0 520 e d 540 560 580 600 620 1 2 3 4 5 96 11677 9 8 a 7 6 1 2 3 4 5 6 7 8 9 10 e d A(C) c DP b a A(C) g f b g c DP 95 10038 λ .

Vishay Semiconductors 1. as well as their impact on the environment. any claim of personal damage. the buyer shall indemnify Vishay Semiconductors against all claims.O. P. Fax number: 49 (0)7131 67 2423 Document Number 83124 Rev. arising out of.B. injury or death associated with such unintended or unauthorized use. Germany Telephone: 49 (0)7131 67 2831.. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application. processes. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. and expenses. 3535. Parameters can vary in different applications. B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. 1. damages. Meet all present and future national and international statutory requirements. 1.VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to TDSG / O / Y11. Regularly and continuously improve the performance of our products. The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years.4. We reserve the right to make changes to improve technical design and may do so without further notice. All operating parameters must be validated for each customer application by the customer. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. Vishay Semiconductor GmbH. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).com 7 . Annex A. B and C (transitional substances) respectively. costs. directly or indirectly.vishay. D-74025 Heilbronn. distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public. Various national and international initiatives are pressing for an earlier ban on these substances. Council Decision 88/540/EEC and 91/690/EEC Annex A. 31-Aug-04 www.

4.vishay. Vishay Semiconductors VISHAY www..TDSG / O / Y11. 31-Aug-04 . 1.com 8 Document Number 83124 Rev.

com Datasheets for electronic components.DatasheetCatalog. .This datasheet has been downloaded from: www.