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Preliminary Data Sheet High speed Driver with bootstrapping for dual Power MOSFETs

TDA21101

P-DSO-8

Features • • • • • • • • • • • • • Fast rise and fall times for frequencies up to 2 MHz Capable of sinking and sourcing of more than 4 A peak current for lowest switching losses Charges High Side (internally clamped to 10 V) and Low Side MOSFET´s gates up to 12 V for lowest on-losses Adjustable High Side MOSFET gate drive voltage via high impedance PVCC pin for optimizing ON losses, gate drive losses, and switching losses Integrates the bootstrap diode for reducing the part count Prevents from cross-conducting by adaptive gate drive control Protects the driver against over-temperature Supports shut-down mode for very low quiescent current through three-state input Compatible to standard PWM controller ICs Floating High Side MOSFET drive up to 30 V Operates with V PVCC = 5 to 12 V ± 10 % à requires no separate supply voltage 1:1 compatible to HIP6601A and HIP6601B Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s and Notebook CPU supplies Package P-DSO-8 Marking 21101G Ordering Code Q67042-S4170-A101

Type TDA21101

Pinout

Number Name 1 GATE HS 2 BOOT

Top View
GATEHS 1 BOOT PWM GND 2 3 4 8 7 6 5

PHASE PVCC VCC GATELS

3 4 5 6 7 8

PWM GND GATE LS VCC PVCC PHASE

Description Gate drive output for the N-Channel High side MOSFET Floating bootstrap pin. To be connected to the external bootstrap capacitor to generate the gate drive voltage for the high side N-Channel MOSFET Input for the PWM controller signal Ground Gate drive output for the N-Channel Low Side MOSFET Supply voltage High impedance input to adjust the High Side gate drive This pin connects to the junction of the High Side and the Low Side MOSFET
2002-03-28

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Max.3 -0.5 10 V 30 150 -55 150 4 55/150/56 °C kV - Symbol Values Unit Min. It has a small propagation delay from input to output. junction-ambient Symbol VVCC VPVCC VPWM VBOOT – VPHASE VPHASE TJ TS Value Unit Min. A circuit designer can fully take advantage of the driver´s capabilities in high-efficiency.3 -0.3 -15 20 20 6. DIN EN 60068-1 Thermal Characteristic Parameter Thermal resistance. in multi-phase converters for CPU supplies on motherboards and VRM´s but also in motor drive and class-D amplifier type applications. -0. Human Body Model IEC climatic category. In addition it provides several protection features as well as a shut down mode for efficiency reasons. e. unless otherwise specified Parameter Voltage supplied to ‘VCC’ pin Voltage supplied to ‘PVCC’ pin Voltage supplied to ‘PWM’ pin Voltage supplied to ‘BOOT’ pin referenced to ‘PHASE’ (clamped by the TDA21101 to 10 V when PVCC > 10 V) Voltage rating at ‘PHASE’ pin. Absolute Maximum Ratings At Tj = 25 °C. Target application The dual high speed driver is designed to work well in half-bridge type circuits where dual N-Channel MOSFETs are utilized. 90 K/W 125 Page 2 2002-03-28 . high-density synchronous DC/DC converters that operate at high switching frequencies. short rise and fall times and the same pin configuration to be compatible to HIP6601.3 -0. Max.Preliminary Data Sheet TDA21101 General Description The dual high speed driver is designed to drive a wide range of N-Channel low side and N-Channel high side MOSFETs with varying gate charges. junction-soldering point Thermal resistance. Typ.g. The high breakdown voltage makes it suitable for mobile applications. DC Junction temperature Storage temperature ESD Rating.

9 threshold * The driver IC will shut down and the High side MOSFET and the Low side MOSFET will be turnedoff when the PWM input is open (e. 9.8 3.0 9. unless otherwise specified Parameter Supply Characteristic Bias supply current Quiescent current Power supply current Symbol Conditions Values Unit Min. unless otherwise specified f = 250 kHz.Preliminary Data Sheet TDA21101 Electrical Characteristic At Tj = 25 °C.0 V Shut down hold-off t_SHUT 320 450 600 ns 1.2 2.1 ≤ f ≤ 2 MHz.5 threshold V PWM High level VPWM_H 2.0 V time PWM pin open * VPWM_O 1. Max.8 2.0 4.2 PWM Low level VPWM_L 1.5 3.8 V ≤ V PWM ≤ 3.5 V 180 Shut down window VIN_SHUT t_SHUT > 600 ns 1.15 V Input Characteristic Current in ‘PWM’ pin IPWM_L V_PWM = 0.5 -500 500 12 mA mA nA IVCC IVCCQ IPVCC Under-voltage lockout 9. 5 V ≤ V PVCC ≤ 12 V VVCC rising threshold VVCC falling threshold Dynamic Characteristic Turn-on propagation td(ON)_HS Delay High Side Turn-off propagation td(OFF)_HS delay High Side Rise time High Side tr_HS Fall time High Side tf_HS Turn-on propagation td(ON)_LS Delay Low Side Turn-off propagation td(OFF)_LS delay Low Side Rise time Low Side tr_LS Fall time Low Side tf_LS Turn-on propagation td(ON)_HS Delay High Side Turn-off propagation td(OFF)_HS delay High Side Rise time High Side tr_HS Fall time High Side tf_HS Turn-on propagation td(ON)_LS Delay Low Side 58 40 PPVCC = V VCC= 12 V CISS = 3000 pF 18 18 40 30 19 17 80 60 PPVCC = V VCC= 12 V CISS = 3000 pF TJ = 125 °C 18 21 50 70 50 34 30 60 40 32 25 ns ns Page 3 2002-03-28 .g. VPVCC = V VCC = 12 V 1.8 V ≤ V PWM ≤ 3.4 V -120 µA Current in ‘PWM’ pin IPWM_H V_PWM = 4.15 8. Typ.0 V 0.5 10 V Under-voltage lockout 8. PWM input disconnected or the PWM IC in a high-Z state) At Tj = 25 °C.0 2.8 9.

Typ. HS. ensured by design Output HS.65 V I_HS_SRC = 2 A. Sink PPVCC = V VCC= 12 V 1. Output Characteristic High Side (HS) and Low Side (LS). Typ.8 150° V V MHz W °C °C TA = 25 °C. TJ = 125 °C (Hysteresis = 50 °C) 135 -25 165 125 At Tj = 25 °C.0 Ω HS. P PVCC = 5 V 1. P PVCC = 5 V 1. 10.1 13.Preliminary Data Sheet Turn-off propagation delay Low Side Rise time Low Side Fall time Low Side Operating Conditions At Tj = 25 °C.2 2 0. Max. Source * PPVCC = V VCC= 12 V 4 Peak outputD<3% A HS.2 13.2 1.15 V I_HS_SRC = 2 A LS.15 V Resistance and I_HS_SRC = 2 A Voltage drop HS.5 LS.5 resp. Source * 4 LS. Source * PPVCC = V VCC= 12 V 2.65 V I_HS_SRC = 2 A. The voltage drop is the voltage drop across the bipolar and MOS transistor combination.95 1. Source * PPVCC = V VCC= 12 V 1. Conditions Page 4 2002-03-28 . the peak output current is the combined output current the driver can deliver. Source * PPVCC = V VCC= 12 V 2.9 Ω resp. Sink PPVCC = V VCC= 12 V 1. Sink 4 * The sourcing outputs of the LS and the HS terminals are bipolar and MOS transistors in parallel.9 Resistance and TJ = 125 °C Ω Voltage drop HS. Sink VVCC= 12 V.8 5 0. Sink PPVCC = V VCC= 12 V 0. Sink PPVCC = V VCC= 12 V 0. Max. (@ 125 °C) TJ = 125 °C LS. Sink VVCC= 12 V. Sink 4 current t_P / Pulse < 30 ns LS. TJ = 125 °C LS.7 1. unless otherwise specified Values Unit Min. Source * PPVCC = V VCC= 12 V 1. unless otherwise specified TDA21101 43 21 20 td(OFF)_LS tr_LS tf_LS Parameter Voltage supplied to ‘VCC’ pins Voltage supplied to ‘PVCC’ pins Input signal transition frequency Power dissipation Thermal shut down Junction temperature Parameter Symbol VVCC VPVCC f PTOT TOT TJ Conditions Values Unit Min.1 Ω TJ = 125 °C HS. TJ = 125 °C Output HS.

Information For further information on technology. For information on the types in question please contact your nearest Infineon Technologies Office. or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body. Page 5 2002-03-28 . We hereby disclaim any and all warranties.-Martin-Strasse 53. D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. or to support and/or maintain and sustain and/or protect human life. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies. Infineon Technologies is an approved CECC manufacturer. TDA21101 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. regarding circuits. it is reasonable to assume that the health of the user or other persons may be endangered.Preliminary Data Sheet Published by Infineon Technologies AG. descriptions and charts stated herein. Terms of delivery and rights to technical change reserved. Warnings Due to technical requirements components may contain dangerous substances. delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). including but not limited to warranties of non-infringement. if a failure of such components can reasonably be expected to cause the failure of that life-support device or system. If they fail. Bereichs Kommunikation St.