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2N5551 / MMBT5551 NPN General Purpose Amplifier
• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
VCEO VCBO VEBO IC TJ, Tstg
NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current - Continuous Junction and Storage Temperature
160 180 6.0 600 -55 to +150
V V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA=25°C unless otherwise noted
PD RθJC RθJA
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
625 5.0 83.3 200 357
mW mW/°C °C/W °C/W
* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06."
© 2009 Fairchild Semiconductor Corporation 2N5551 / MMBT5551 Rev. B1 1
0mA IC = 10mA. IB = 0 V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage ICBO IEBO hFE Collector Cutoff Current Emitter Cutoff Current DC Current Gain IC = 100μA. VCE = 5.0MHz IC = 1. f = 1.11 Vaf=100 Bf=242.511f Xti=3 Eg=1. VCE = 5.0 1.0V. VCE = 5. f = 1.197 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=4. IB = 5.0 V. IC = 0 IC = 1. IE = 0.6 Ne=1.5 Br=3.0MHz VBE = 0.5 Cje=18. 160 180 6.2N5551 / MMBT5551 — NPN General Purpose Amplifier Electrical Characteristics Symbol Off Characteristics TA = 25°C unless otherwise noted Parameter Test Condition Min.0mA IC = 50mA.79p Mje=. f = 100MHz VCB = 10V.3416 Vje=.883p Mjc=. RS=1. IC = 0 VCB = 120V. IB = 5. IB = 1. TA = 100°C VEB = 4.0mA IC = 50mA.0mA.0 20 50 250 8.0V IC = 10mA.fairchildsemi. VCE = 10 V.0 100 6.249 Ise=2.3047 Vjc=.0V IC = 10mA.0 kΩ. IC = 0.0mA IC = 10mA.com . IE = 0.15 0. VCE = 10V.20 1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10) © 2009 Fairchild Semiconductor Corporation 2N5551 / MMBT5551 Rev.0 mA.0kHz IC = 250 uA.7 kHz 50 50 50 80 80 30 nA μA nA On Characteristics 250 0.511f Ikf=.0 dB V V V V MHz pF pF VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter On Voltage Small Signal Characteristics fT Cobo Cibo Hfe NF Current Gain Bandwidth Product Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure Spice Model NPN (Is=2.0V IC = 50mA.75 Fc=. IB = 1.5V. VCE= 5.3458 Xtb=1. IE = 0 VCB = 120V.75 Tr=1. f=10 Hz to 15. IE = 0 IE = 10uA. B1 2 www. Units V V V V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0 Max. f = 1.0mA.
2N5551 / MMBT5551 — NPN General Purpose Amplifier Typical Performance Characteristics 125 C 100 C 200 o o VCE=5V VCE(SAT).COLLECTOR CURRENT [mA] IC.01 1 o 25 C o 75 C o 0 1 10 100 1000 10 100 IC.BASE-EMITTER VOLTAGE [V] VBE(ON).4 TA = 125 C o 0.4 0.0 Figure 2.6 TA = 75 C TA = 100 C o o 0.COLLECTOR CURRENT [mA] IC.BASE-EMITTER VOLTAGE [V] -40 C 0.6 125 C 100 C 75 C o o o 0. Base-Emitter Saturation Voltage vs Collector Current Figure 4.COLLECTOR-EMITTER VOLTAGE [V] 250 10 ? 10 hFE.fairchildsemi. Typical Pulsed Current Gain vs Collector Current 1. Collector-Emitter Saturation Voltage vs Collector Current 1.2 VBE(SAT).com .8 0. B1 3 www. Collector Cutoff Current vs Ambient Temperature Figure 6.8 o 1.0 1 10 100 1000 IC.DC CURRENT GAIN 75 C 150 o 1 25 C 100 o 100 C 0.0 TA = -40 C TA = 25 C o o 25 C o 0. Base-Emitter On Voltage vs Collector Current 100 I CBO.COLLE CTOR CURRENT (nA) 50 VCB = 100V CAPACITANCE [pF] 10 10 CIB COB 1 25 1 50 75 100 TA .2 1 10 100 0.1 o 125 C o -40 C 50 o -40 C 0.COLLECTOR CURRENT [mA] Figure 3. Input and Output Capacitance vs Reverse Voltage © 2009 Fairchild Semiconductor Corporation 2N5551 / MMBT5551 Rev.COLLECTOR CURRENT [mA] Figure 1.2 0.AMBIE NT TEMP ERATURE ( ° C) 125 0 1 2 3 4 5 6 7 8 9 10 REVERSE BIAS VOLTAGE [V] Figure 5.
fairchildsemi.com .0 mA 240 12 220 8 200 180 4 160 0. Collector.SMALL SIGNAL CURRENT GAIN vs Collector Current 16 FREG = 20 MHz V CE = 10V I C = 1. B1 4 www. Power Dissipation vs Ambient Temperature © 2009 Fairchild Semiconductor Corporation 2N5551 / MMBT5551 Rev. Small Signal Current Gain vs Collector Current PD .POWER DISSIPATION (mW) 600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 SOT-23 TO-92 Figure 7.1 1 10 100 1000 0 1 RESISTANCE (kΩ ) 10 I C .2N5551 / MMBT5551 — NPN General Purpose Amplifier Typical Performance Characteristics (Continued) Between Emitter-Base 260 BV CER .BREAKDOWN VOLTAGE (V) h FE .Emitter Breakdown Voltage with Resistance Between Emitter-Base 700 Figure 8.COLLECTOR CURRENT (mA) 50 Figure 7.
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