Code No: R05012302 Set No.

1
I B.Tech Supplimentary Examinations, Aug/Sep 2008
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
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1. (a) State RMS value of a voltage waveform and find the RMS value and crest
factor of the waveform v(t) of figure.1a

Figure 1a
(b) What is potential difference?
(c) An electric heater takes 3 kW at 240 Volts. Calculate the current and resis-
tance of the heating element. [10+2+4]

2. (a) Name the various parts of a D.C machine and give the materials used for each
part. Also show the magnetic path.
(b) Explain the principle of operation of D.C motor. [8+8]

3. (a) For the network shown in the figure 3(a)i determine the range of RL and IL
that will result in VRL being maintained at 10 V.
i. Determine the maximum Wattage rating of the diode.

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Code No: R05012302 Set No. 1

Figure 3(a)i
ii. The reverse saturation current of the diode is 1 µA. Its peak inverse Volt-
age is 500V. Find ri , Vo that PIV is not exceeded. show in figure 3(a)ii &
figure 3(a)ii

Figure 3(a)ii

Figure 3(a)ii
4. (a) Explain with neat circuit diagram how SCR can be used as HWR.

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Code No: R05012302 Set No. 1
(b) Explain how SCR can be used as a switch.
(c) Explain the turn on mechanism of SCR. [5+5+6]

5. (a) Compare the merits and drawbacks of FET and BJT.

(b) Sketch the basic structure of an n-channel JFET.
(c) Define the pinch off voltage VP and sketch the depletion region before and
after pinch-off and explain the reason. [6+4+6]

6. (a) Define class A, B, AB, B and C operation of amplifiers.

(b) Draw the circuit diagram of a push-pull amplifier and explain how even har-
monics are eliminated.
(c) Derive the relation between gain with feed back and without feedback.[6+6+4]

7. (a) With the help of neat circuit diagram, explain the following applications of
OP-AMP
i. Multiplier
ii. differentiator
iii. Subtractor.
(b) Design a scaling adder circuit using OP-AMP, to give the output voltage
Vo = −(3V1 + 4V2 + 5V3 ), where V1 , V2 and V3 are the input voltages given to
the circuit. [10+6]

8. (a) Realize NAND gate using minimum number of NOR gates.

(b) Explain the principle of basic shift registers.
(c) Distinguish between asynchronous and synchronous counters.
(d) Distinguish between Ring and Twisted Ring counters. [4+4+4+4]

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Code No: R05012302 Set No. 2
I B.Tech Supplimentary Examinations, Aug/Sep 2008
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
⋆⋆⋆⋆⋆

1. (a) Determine the voltage VAB in the circuit shown in the figure 1a

Figure 1a
(b) Find the power dissipated in 40 Ω resistor of figure 1b shown. [10+6]

Figure 1b
2. (a) Does the induction motor have any similarities with the transformer. Compare
the similarities and differences between them.
(b) A 20 h.p, 400 V, 50 Hz, 3-phase induction motor has an efficiency of 80%
and working at 0.7 p.f. The motor is connected to 400 Volts, 3-phase supply
calculate the current drawn by the motor from the mains. [8+8]

3. (a) Draw the energy band diagram of p-n junction under open circuit condition
and explain its operation.
nνT
(b) Prove that the dynamic resistance of p-n diode is r ≈ I
[10+6]

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Code No: R05012302 Set No. 2
4. (a) A HWR has a load of 3.5 kW. If the diode resistance and secondary coil
resistance together have a resistance of 800 Ω and the input voltage has a
signal voltage of peak value 240 V, Calculate
i. Peak, average and RMS value of current flowing.
ii. DC power output
iii. AC power input
iv. Efficiency of the rectifier.
(b) Compare half wave, Center tapped full wave and bridge rectifiers. [10+6]

5. (a) Draw the circuit of a transistor (n-p-n) in the CB configuration. Sketch the
input & output characteristics and explain the shape of the curves qualita-
tively.
(b) For the circuit in figure 5b shown for n-p-n transistor, calculate the collector
and base currents. Assume hF E = 50. Explain Q point. [8+8]

Figure 5b
6. (a) Define class A, B, AB, B and C operation of amplifiers.
(b) Draw the circuit diagram of a push-pull amplifier and explain how even har-
monics are eliminated.
(c) Derive the relation between gain with feed back and without feedback.[6+6+4]

7. (a) Explain the effect of temperature on

i. i/p bias current
ii. i/p off set current
iii. i/p offset voltage.
(b) Explain in brief the applications of OP-AMP. [8+8]

8. (a) Give the Boolean functions: F= xy + x′ y′ +y′ z

i. Implement with only OR and NOT gates.
ii. Implement with only AND and NOT gates.

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Code No: R05012302 Set No. 2
(b) Explain the principle of master-slave JK flip-flop.
(c) Find the complement of given function and reduce it to a minimum number
of literals.(BC′ +A′ D) (AB′ +CD′ ). [6+5+5]

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Code No: R05012302 Set No. 3
I B.Tech Supplimentary Examinations, Aug/Sep 2008
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
⋆⋆⋆⋆⋆

1. (a) Derive an equation for the total power consumed in a three phase circuit. Will
it depend on the type of load connected?
(b) Three identical impedances 106 53.10 ohm are connected in delta to a 3-phase,
240 volt balanced supply. Find the line currents and power consumed. [8+8]

2. (a) Show that single phase induction motors are not self starting.
(b) Explain the construction and working principle of any type of 1-phase induc-
tion motor. [8+8]

3. (a) Explain how an n-type semiconductor is formed. Name different donor impu-
rities used.
(b) i. Find the conductivity of intrinsic silicon at 300 0 K.
ii. If donor impurity is added to the extent of 1 impurity atom in 108 silicon
atoms, find the conductivity. It is given that at 300 0 K,
ni = 1.5 × 1010 /Cm3 , µp = 500 Cm2 /vs, µn = 1300 Cm2 /V S. [4+4+8]

4. (a) Sketch typical SCR forward and reverse characteristics.

(b) Identify all regions of the characteristics and all important current and voltage
levels.
(c) Explain the shape of the curves in terms of the SCR two transistor equivalent
circuit.
(d) Explain why always silicon but not Germanium is used in the construction of
SCR.
(e) Obtain the expression for total current through SCR and Triac. [4+3+3+3]

5. (a) Draw the circuit diagram of a fixed bias circuit and derive the expression for
stability factor S. Why this circuit is thermally not stable ? Explain.
(b) An n-p-n transistor with β = 50 is used in a CE circuit with VCC =10 V, RC =
2KΩ. The bias is obtained by connecting a 100 KΩ resistance from collector
to base. Assume VBE =0 V. Find
i. the Quiescent point
ii. the Stability factor S. [8+8]

6. (a) Compare the three transistor amplifier configurations with related to AI , Av ,

Ri and R0 .

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Code No: R05012302 Set No. 3
(b) For the circuit shown calculate AI , AV , Ri and R0 using approximate
h-parameter model. Assume hf e = 50, hie = 1100 Ω, hoe = 25 µA/V, hre =
2.5 × 10−4 as shown in the figure 6b. [16]

Figure 6b
7. (a) Draw the circuit diagram of Wien bridge oscillator using BJT. Show that the
gain of the amplifier must be at least 3 for the oscillations to occur.
(b) For the fixed-bias Ge transistor, n-p-n type, the junction voltages at satura-
tion and cutoff one in active region, may be assumed to zero. This circuit
operate properly over the temperature range -50 o C to 75 o C and to just start
malfunctioning at these extremes. The various circuit specifications are: VCC
= 4.5V, VBB = 3volts, hf e =40 at -50 o C, and hf e =60 at 75 o C, ICBO = 4
µA at 25 o C and doubles every 10 o C. Collector current is 10 µA. Design the
values of Rc1 , R1 and R2 . [8+8]
8. (a) Explain the following switching circuit in binary logic notation as shown in
the figure8a

Figure 8a
(b) Define a register. Construct a shift register using S-R flip-flops and explain
its operation.
(c) Convert the following numbers:
i. (101101. 101101)2 decimal number
ii. (5345)10 to binary number. [4+6+6]

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Code No: R05012302 Set No. 3
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Code No: R05012302 Set No. 4
I B.Tech Supplimentary Examinations, Aug/Sep 2008
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
⋆⋆⋆⋆⋆

1. (a) Determine the voltage VAB in the circuit shown in the figure 1a

Figure 1a
(b) Find the power dissipated in 40 Ω resistor of figure 1b shown. [10+6]

Figure 1b
2. (a) With a neat sketch explain the construction of a D.C. machine.
(b) Explain the principle of operation of D.C generator. [8+8]

3. (a) i. Find the resistivity of intrinsic silicon at 300 0 K. It is given the ni at 300
0
K in silicon is 1.5 × 1010 /Cm3 andµp = 500 Cm2 /V − S, µn = 1300-
Cm2 /V − S.
ii. If an acceptor impurity is added to the extent of 1 imputrity atom in
2 × 108 silicon atoms, find its resistivity.
iii. If a donor impurity is added to the extent of 1 impurity atom in 5 × 107
silicon atoms, find its resistivity.

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Code No: R05012302 Set No. 4
(b) Prove that the concentration of free electron in an intrinsic semiconductor is
given by n = Nc e−(Ec −Ef )/KT [12+4]

4. (a) The half wave rectifier shown in the figure 4a is fed with a sinusoidal voltage
V=20 sin100t.
i. Sketch the output waveform.
ii. Determine the DC output voltage assuming ideal diode behaviour.
iii. Repeat the calculations assuming the simplified diode (silicon) model.

Figure 4a
(b) Draw the circuit diagram of full wave rectifier having two diodes and explain
its operation. [8+8]

5. (a) Draw the emitter characteristic of UJT and explain the shape of the curve
qualitatively. Mention different regions of operations.
(b) Draw the circuit of a relaxation oscillator and explain its operations. Mention
its applications. [8+8]

6. (a) Compare the differences between voltage amplifiers and power amplifiers.
(b) Show that the maximum theoretical efficiency of class B push-pull amplifiers
is 78.5%.
(c) Draw the circuit of a transformer coupled power amplifier and explain its
operations with help of load-line analysis. [4+6+6]

7. (a) Draw the circuit diagram of Wien bridge oscillator using BJT. Show that the
gain of the amplifier must be at least 3 for the oscillations to occur.
(b) For the fixed-bias Ge transistor, n-p-n type, the junction voltages at satura-
tion and cutoff one in active region, may be assumed to zero. This circuit
operate properly over the temperature range -50 o C to 75 o C and to just start
malfunctioning at these extremes. The various circuit specifications are: VCC
= 4.5V, VBB = 3volts, hf e =40 at -50 o C, and hf e =60 at 75 o C, ICBO = 4
µA at 25 o C and doubles every 10 o C. Collector current is 10 µA. Design the
values of Rc1 , R1 and R2 . [8+8]

8. (a) Convert the following numbers:

i. (1431)10 to base 2.

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Code No: R05012302 Set No. 4
ii. (53.1575)10 to base 2.
(b) Implement AB+C′ D′ = F with three NAND gates. Draw the logic circuit.
(c) Prove that the NAND Gate is a universal gate.. [8+4+4]

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