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# Department of Electrical & Electronics Engineering

CLASS SEMESTER

: II YEAR EEE : III SEM

SUBJECT CODE : 131351 SUBJECT : ELECTRONIC DEVICES AND CIRCUITS LAB

131351CIRCUITS AND DEVICES LABORATORY
LIST OF EXPERIMENTS: S. No. 1. 2. 3.. 4. 5. 6. 7. TITLE
Characteristics of PN Junction diode Zener diode and Rectifier Applications Bipolar Junction transistor -CE, CB, CC characteristics Characteristics of FET Characteristics & UJT Characteristics of SCR , DIAC and TRIAC Characteristics of Photo diode, phototransistor Single phase half wave and full wave rectifiers with inductive and capacitive filters.

8 9. 10 11. 12.

Characteristics of BJT Amplifier frequency response Characteristics of FET amplifier frequency response Characteristics of Class B amplifier – Darlington pair Characteristics of Differential amplifier PSPICE modeling of electronic circuits

Ex. No .1a CHARACTERISTICS OF PN JUNCTION DIODE
AIM: To draw the forward and reverse biased characteristics of PN junction diode and to find cut in voltage, break down voltage ,static resistance and dynamic resistance . APPARATUS REQUIRED: S.No 1 Components Regulated power supply Type/Range (0-30) V (0-30) mA 2 Ammeter (0-30) µA (0-1) V 3 Voltmeter (0-10) V IN4001 1 KΩ 1 1 1 1 As per required 1 1 Quantity 1 1

3 4 5 6

Connecting Wire

Note down the corresponding Ammeter readings I.7 for Si and 0. Connect the circuit as per the diagram. 2.PROCEDURE: FORWARD BIAS: 1. Find the forward voltage drop = [Hint: it is equal to 0.c (dynamic) resistance r = δV / δI (r = ∆V/∆I) = ∆ V2 − V1 . 4. 3. Vary the applied voltage V in steps of 1. 4. Plot a graph between V & I OBSERVATIONS: 1. 2. Find the d. Find the a.1V.c (static) resistance = V/I. FORMULA FOR REVERSE SATURATION CURRENT (IO): Io = ∂I/[exp(∂V/ηVT)]-1 ∂ η Where .3 for Ge] REVERSE BIAS: 1. Find the dynamic resistance r = δV / δI. Vary the applied voltage V in steps of 0. Connect the circuit as per the diagram. Note down the corresponding Ammeter readings I. Plot a graph between V & I 5.0V. 3. I 2 − I1 3. 2.

q is the charge of the electron and T is the temperature in degrees Kelvin. η =1 for Silicon and 2 for Germanium CIRCUIT DIAGRAM: FORWARD BIAS: + + TABULAR COLUMN: FORWARD BIAS: S. VOLTAGE (In Volts) CURRENT (In mA) REVERSE BIAS: (0-500)µA 1KΩ + a + + (0-30)V - (0-30)V - .No.VT is the voltage equivalent of Temperature = kT/q k is Boltzmann’s constant.

. static resistance and dynamic resistance were calculated.No.TABULAR COLUMN: REVERSE BIAS: S. VOLTAGE (In Volts) CURRENT (In µA) MODEL GRAPH If (mA) I2 Vb ( Volts) I1 V1 V2 Ic(µa) Vf (Volts) RESULT: Thus the forward and reverse biased characteristics of PN junction diode were drawn and also cut in voltage. break down voltage.

No.1 b .Ex.

No 1 Components Regulated power supply Type/Range (0-30) V (0-30) mA 2 Ammeter (0-250) µA (0-30) V 3 Voltmeter (0-2) V BZV10 1 KΩ 1 1 1 1 As per required 1 1 Quantity 2 1 3 4 5 6 Zener Diode Resistor Bread Board Connecting Wire . APPARATUS REQUIRED: S.CHARACTERISTICS OF ZENER DIODE AIM: To plot VI characteristics of zener diode and (i) find break down voltage in reverse biased condition(ii) To calculate static resistance and dynamic resistance in both forward and reverse bias condition.

Plot the graph :V (vs) I. Note down the corresponding ammeter readings. 2. 3. Connect the circuit as per the diagram. REVERSE BIAS: 1. 4. 5. Find the dynamic resistance r = ∆V/∆I.FORMULA USED: Static Resistance R =V/I Dynamic Resistance =∆V/∆I PROCEDURE: FORWARD BIAS: 1. Plot a graph between V & I 5.1V in the voltmeter till the needle of power supply shows 30V. Vary the power supply in such a way that the readings are taken in steps of 0.1V in the voltmeter till the needle of power supply shows 30V. 3. 2. 4. Find the dynamic resistance r = ∆V/∆I. Vary the power supply in such a way that the readings are taken in steps of 0. Connect the circuit as per the circuit diagram. . Note down the corresponding Ammeter readings I.

No.CIRCUIT DIAGRAM: FORWARD BIAS: 1KΩ (0-30)mA a + + BZV10 A K 1 (0-30) V - + (0-30) V - TABULAR COLUMN: FORWARD BIAS: S. VOLTAGE (In Volts) CURRENT (In mA) REVERSE BIAS: .

No. VOLTAGE (In Volts) CURRENT (In µA) RESULT: Thus VI characteristics of zener diode was drawn and breakdown voltage . static resistance and dynamic resistance were calculated. .TABULAR COLUMN: REVERSE BIAS: S.

APPARATUS REQUIRED: S.Ex.100S 10 KΩ 1 1 1 (0–30)V 1 1 Components Regulated power supply Type/Range (0-30) V (0–10)mA Quantity 2 1 .No 1 2 Ammeter (0–1)A 3 Voltmeter (0–2)V 4 5 Resistor 1 KΩ 6 7 Bread Board Connecting Wires 1 1 As per required Transistor CL .No.2 a CHARACTERISTICS OF CE CONFIGURATION AIM: To study the input and output characteristics of BJT in CE configuration.

Set IB. Repeat the above procedure for different values of VCE. 3. Set VCE .vary VBE in regular interval of steps and note down the corresponding IB reading. Repeat the above procedure for different values of IB.Plot the graph: VCE Vs IC for a constant IB.Connect the circuit as per the circuit diagram. 2. Vary VCE in regular interval of steps and note down the corresponding IC reading. Connect the circuit as per the circuit diagram. 3.PROCEDURE: INPUT CHARECTERISTICS: 1. 2. OUTPUT CHARACTERISTICS: 1. CIRCUIT DIAGRAM MODEL GRAPH: INPUT CHARACTERISTICS: OUTPUT CHARACTERISTICS: . Plot the graph: VBE Vs IB for a constant VCE.

µA IC VCE = 0V VCE = 5V mA IB IB=60µA IB=40µA IB=20µA 0 VBE(V) 0 VCE(V) TABULAR COLUMN: INPUT CHARACTERISTICS: VCE=1V VBE(V) IB(µA) VBE(V) VCE=2V IB(µA) OUTPUT CHARACTERISTICS: .

IB=20µA µ VCE(V) IC(mA) VCE(V) IB=40µA µ IC(mA) RESULT: were drawn. APPARATUS REQUIRED: S.2b CHARACTERISTICS OF CB CONFIGURATION USING BJT AIM: To study the input and output characteristics o f BJT in CE configuration. Thus the input and output characteristics of BJT in Common Emitter (CE) configuration Ex.No 1 2 Components Regulated power supply Ammeter Type/Range (0-30) V (0–10) mA Quantity 2 1 .No.

Set VCE=5V. Repeat the above procedure for 10V. . 2.(0–1) A 3 Voltmeter (0–2) V 4 5 Resistor 1 kΩ 6 7 Bread Board Connecting Wires Transistor CL . 1. Connect the circuit as per the circuit diagram.100S 10 kΩ (0–30) V 1 1 1 1 1 1 1 As per required PROCEDURE: INPUT CHARACTERISTICS: It is the curve between emitter current IE and emitter-base voltage VBE at constant collectorbase voltage VCB. 15V. vary VBE in steps of 0.1V and note down the corresponding IB. 3 Plot the graph VBE Vs IB for a constant VCE.

vary VCE in steps of 1V and note down the corresponding IC. Plot the graph VCE Vs IC for a constant IB. TABULAR COLUMN: INPUT CHARACTERISTICS: S. 80µA. Connect the circuit as per the circuit diagram. 2. VCB = VEB (V) IE (µA) µ V VCB = VEB (V) IE (µA) µ V VCB = VEB (V) IE (µA) µ V .OUTPUT CHARACTERISTICS: It is the curve between collector current IC and collector-base voltage VCB at constant emitter current IE.No. Set IB=20µA. Repeat the above procedure for 40µA. 1. etc. 3.

No.OUTPUT CHARACTERISTICS: S. IE = VCB (V) Ic mA IE = VCB (V) Ic mA IE = VCB (V) Ic mA (mA) (mA) (mA) .

MODEL GRAPH: INPUT CHARACTERISTICS: .

OUTPUT CHARACTERISTICS: RESULT:Thus the input and output characteristics of BJT in Common Base(CB) configuration were drawn. .

No.Ex.4b .

.7V.Set VB1B2 = 0V. vary VEB1 . & note down the readings of IE & VEB1 3. where VD = 0.VD/ VB1B2. 2. CIRCUIT DIAGRAM: .Connect the circuit as per the circuit diagram. vary VEB1 .Find the intrinsic standoff ratio. & note down the readings of IE & VEB1 4.Set VB1B2 = 10V . 5.CHARACTERISTICS OF UNIJUNCTION TRANSISTOR AIM:To determine the characteristics of UJT APPARATUS REQUIRED: S.No 1 2 3 Voltmeter (0–10) V 4 UJT Resistor 6 7 Bread Board Connecting Wires 2N2646 Components Regulated power supply Ammeter Type/Range (0-30) V (0-30) mA (0–30) V Quantity 2 1 1 1 1 2 1 As per required 1 kΩ - FORMULA FOR INTRINSIC STANDOFF RATIO: η = VP .Plot the graph : IE Versus VEB1 for constant VB1B2. PROCEDURE: 1.

TABULAR COLUMN: VB1B2 = 0 V VEB1 (V) IE (mA) VEB1 (V) VB1B2 = 10 V IE (mA) Peak Voltage=………………….V .

VD/ VB1B2 η MODEL GRAPH: RESULT: Thus the characteristics of UJT were obtained and its operation was studied.VP . .

4a VI CHARACTERSTICS OF SCR AIM: To determine the VI characteristics of given SCR at different gate currents. APPARATUS REQUIRED: S.No 1 2 3 Ammeter (0-10) mA 4 5 Resistor 1 kΩ 6 7 Bread Board Connecting Wire 1 1 As per required Voltmeter (0-50) V 560 Ω 1 1 1 Components SCR Regulated power supply Type/Range SN102 (0-30) V (0-100) mA Quantity 1 1 1 .No.Ex.

Make the connections as per the circuit diagram.Switch OFF the power supply. Disconnect the components. Draw the graph in between VAK and IA. 4. 3. CIRCUIT DIAGRAM: . Keep IG as constant. 8. 7. 6.PROCEDURE: 1. Switch ON the power supply. 2. Vary the voltage VAK step by step from 0V and note its corresponding anode current(IA) 5. Repeat the above procedure of 4 and 5 for different values of IG.

2 mA VAK (Volts) IA (mA) MODEL GRAPH: RESULT :Thus VI characteristics of SCR for different values of IG are determined.1 mA VAK (Volts) IA (mA) IG = 0.TABULAR COLUMN: S. .No IG = 0.

4. Vary VDS in steps of 1 V & note down the corresponding ID.3a CHARACTERISTICS OF JUNCTION FIELD EFFECT TRANSISTOR AIM: To study the characteristics of JFET. Bread Board Connecting Wire 1 1 As per required 68 kΩ 1 1 Components JFET Regulated power supply Ammeter Type/Range BFW11 (0-30) V (0-30)mA (0-30) V Quantity 1 2 1 1 . 3.No 1 2 3 4 Voltmeter (0-10) V 5 Resistor 1 kΩ 6 7 PROCEDURE: DRAIN CHARACTERISTICS: 1. Repeat the same procedure for VGS = -1V. 2. Connect the circuit as per the circuit diagram. APPARATUS REQUIRED : S.No. Set the gate voltage VGS = 0V. Plot the graph VDS Vs ID for constant VGS.Ex. 5.

OBSERVATIONS 1. YOS = 1/ rd. Vary the gate voltage VGS in steps of 1V & note down the corresponding ID. Open source impedance.c (dynamic) drain resistance. Plot the graph VGS Vs ID for constant VDS. 3. 2.c (static) drain resistance. ∆ 3. d. Set the drain voltage VDS = 5 V. TRANSFER CHARACTERISTICS: 1. 2. FET PARAMETER CALCULATION: Drain Resistance rd = ∆VDS VGS Ω ∆I D ∆I D VDS ∆VGS Transconductance gm = Amplification factor µ=rd . a. gm . rD = VDS/ID. 5. rd = ∆VDS/∆ID. Repeat the same procedure for VDS = 10V. 4. Connect the circuit as per the circuit diagram.

CIRCUIT DIAGRAM: TABULAR COLUMN: DRAIN CHARACTERISTICS: VGS = 0V VDS (V) ID(mA) VGS = -1V VDS (V) ID(mA) .

TRANSFER CHARACTERISTICS: VDS =5volts VGS (V) ID(mA) VDS = 10volts VGS (V) ID(mA) MODEL GRAPH: DRAIN CHARACTERISTICS: ID (mA) VGS = 0V VGS = -1V VGS = -2V VGS = -3V 0 VDS (volts) .

.TRANSFER CHARACTERISTICS: ID(mA) VDS =Const VGS (V) RESULT: Thus the drain and transfer characteristics of JFET was obtained and the graph is plotted.

7. 2.5 a VI CHARACTERSTICS OF DIAC AIM: To determine the VI characteristics of DIAC and find out its breakdown voltage. Make the connections as per the circuit diagram. 3.No 1 2 3 4 5 6 7 Components DIAC Regulated power supply Ammeter Voltmeter Resistor Bread Board Connecting Wire Type/Range D3202 (0-30) V (0-100)mA (0-100) V 470 Ω Quantity 1 2 1 1 1 1 As per required PROCEDURE: 1. Take its corresponding ammeter readings.Ex. 6. . Vary the applied voltage step by step. Note its breakdown voltage. 5.No. Repeat the above procedure of 3 and 4 for reverse biasing also. Switch ON the power supply. 4. Draw the graph in between voltage and current. APPARATUS REQUIRED : S.

Switch OFF the power supply.8. 9. CIRCUIT DIAGRAM: FORWARD BIAS: TABULAR COLUMN: S.No VF (Volts) IF(mA) . Disconnect the components.

No VR (Volts) IR (mA) .REVERSE BIAS: TABULAR COLUMN: S.

MODEL GRAPH: RESULT: The VI characteristics of DIAC are determined . Volts.The breakdown voltage of DIAC is …………. .

Ex. 5. Make the connections as per the circuit diagram. Keep the gate current (IG) as constant. Vary the applied terminal voltage (VT) step by step from 0 V.5b V-I CHARACTERSTICS OF TRIAC AIM: To determine the VI characteristics of given TRIAC at different gate current. 7. 4 and 5 for different gate currents. Take its corresponding ammeter reading (IT). 2.No 1 2 3 Ammeter (0-10)mA 4 5 6 7 PROCEDURE: 1. Switch ON the power supply.No. 3. Voltmeter Resistor Bread Board Connecting Wire (0-100) V 470 Ω 1 1 2 1 As per required Components TRIAC Regulated power supply Type/Range T2801 (0-30) V (0-100)mA Quantity 1 2 1 . 6. 4. Repeat the above procedures of 3 . Draw the graph in between voltage VT and current IT. APPARATUS REQUIRED : S.

9. Switch OFF the power supply. Note its breakdown voltage. Disconnect the components.8. 10. CIRCUIT DIAGRAM: TABULAR COLUMN: S.No IG = 2 mA VT (Volts) IR (mA) IG = 2 mA VT (Volts) IR (mA) .

MODEL GRAPH: RESULT: The VI characteristics of TRIAC are determined with different gate currents .mA. Volts and breakdown current is …….The breakdown voltage of TRIAC is …………. .

To study the characteristics of a photo-diode. To study the characteristics of phototransistor.No.6 CHARACTERISTICS OF PHOTO-DIODE AND PHOTOTRANSISTOR AIM: 1.Ex. 2. APPARATUS REQUIRED: S.No 1 2 3 4 5 6 7 8 Components Photo diode Type/Range (0-30) V (0-30)mA (0-30) V 1 KΩ - Quantity 1 2 1 1 2 1 1 As per required Regulated power supply Ammeter Voltmeter Resistor Bread Board Photo transistor Connecting Wire .

5. Repeat the above procedure for the various values of DC bulb. Maintain a known distance (say 5 cm) between the DC bulb and the photo diode. 3. Ir. 4.PROCEDURE: PHOTO DIODE: 1. Ir for a constant DC bulb voltage. Ir. 2. vary the voltage of the diode in steps of 1V and note down the corresponding diode current. PHOTOTRANSISTOR: 1. vary the voltage of the diode insteps of 1V and note down the corresponding diode current. 3. 2V). Rig up the circuit as per the circuit diagram. 4. 2. 5. 2V). Maintain a known distance (say 5 cm) between the DC bulb and the phototransistor. Plot the graph: VD vs. Repeat the above procedure for the various voltages of DC bulb. Set the voltage of the bulb (say. Rig up the circuit as per the circuit diagram. Ir for a constant bulb voltage. Set the voltage of the bulb (say. Plot the graph: VD vs. CIRCUIT DIAGRAM IN PHOTODIODE: : .

TABULAR COLUMN S.No. VOLTAGE (In Volts) CURRENT (In mA) MODEL GRAPH: CIRCUIT DIAGRAM IN PHOTOTRANSISTOR: .

No. VCE (in Volts) IC (in mA) MODEL GRAPH: .TABULAR COLUMN: S.

No.RESULT: Thus the characteristics of photo diode and phototransistor are studied. Components Diode Capacitor CRO Voltmeter Resistor Transformer Type/Range IN4001 1µf (0-100) V 1KΩ 230V/6V Quantity 1 2 1 1 1 1 .6 SINGLE PHASE HALF WAVE AND FULL WAVE RECTIFIER WITH AND WITHOUT FILTER AIM: To study the waveform o the single phase half wave and full wave rectifier with and without filter APPARATUS REQUIRED : S. 4 5 6.No 1 2 3. Ex.

7 8 Bread Board Connecting Wire - 1 As per required FORMULA FOR HALF WAVE RECTIFIER 1.BRIDGE RECTIFIER: (a) Vdc=2Vm/π (b) Vrms= Vm /√2 (Vrms Vdc)2 .WITH FILTER: (a) Vdc=Vm=Vrpp/2 (b) Vrms=Vrpp/2√3 (c)Ripple Factor= Vrms/ Vdc 3.WITHOUT FILTER: (a)Vdc=Vm/π (b)Vrms= Vm/2 (c)Ripple factor / = 2.

Then the graph is plotted according to the input output waveforms 5.Connections are made as per circuit diagram 2.Set the input and note down the input and output waveforms in CRO 4.Connections are made as per circuit diagram 2.Ac supply is switched on 3.(c)Ripple Factor= = (Vrms Vdc)2-1 Vdc=Average value of dc voltage Vm=Maximum supply voltage Vrpp=RMS value of the voltage Vrms=Ripple voltage PROCEDURE: SINGLE PHASE HALF WAVE RECTIFIER: 1.Then the graph is plotted according to the input output waveforms CIRCUIT DIAGRAM: HALF WAVE RECTIFIER (WITHOUT FILTER): .Ac supply is switched on 3.Note down the input and output waveforms in CRO for filter and without filter connections 4.Then the graph is plotted according to the input output waveforms SINGLE PHASE FULL WAVE RECTIFIER: 1.

WITH FILTER: FULL WAVE RECTIFIER (WITH FILTER): .

NO Vm(v) Vdc(V) Vrms (V) Resistance Vrpp(V) Ripple factor FULL WAVE RECTIFIER WITHOUT FILTER S.NO Vm(v) Vdc(V) Vrms (V) Resistance Ripple factor WITH FILTER: S.TABULAR COLUMN SINGLE PHASE HALF WAVE RECTIFIER WITHOUT FILTER: S.NO Vm(v) Vdc(V) Vrms (V) Resistance Vrpp(V) Ripple factor .NO Vm(v) Vdc(V) Vrms (V) Resistance Ripple factor WITH FILTER: S.

MODEL GRAPH: .

.

Vrms and ripple factor were calculated. .RESULT: Thus the waveforms characteristics of half wave and full wave rectifier were Vdc.

7µf 0.Ex. 9 10 11 Components Transistor Capacitor Capacitor Inductor CRO Breadboard Resistor Transformer Resistor Single generator Connecting Wire As per required Type/Range BC107 4.No.6 FREQUENCY RESPONSE OF BJT AMPLIFIER AIM: To obtain the frequency response of BJT amplifier APPARATUS REQUIRED : S. 4.001mf 100mf/25v 1mf/25V 12KΩ 230V/6V 6KΩ Quantity 1 1 1 1 1 1 1 1 1 . 5.No 1 2 3. 6 7 8.

Using CRO Amplitude and Time periods are calculated 5.PROCEDURE: 1.From the Time period of Oscillations the frequency is calculated 6. 3.The output is viewed through CRO 4.Circuit Connections are given as per the circuit diagram 2. The graph is drawn with the plotted reading Frequency = 1/Time period CIRCUIT DIAGRAM .A required voltage through fn is supplied into circuit.

TABULAR COLUMN:
S.No FREQUENCY INPUT OUTPUT Av =Vo/Vi GAIN in db (20logAv)

MODELGRAPH:

RESULT: Thus the frequency response curve of the amplifier was drawn and the gain is calculated

Exp.No.6 CHARACTERISTICS OF FET AMPLIFIER FREQUENCY RESPONSE AIM: To determine the parameter of the single stage JFET amplifier (common –drain amplifier)
1.Band width 2.Midband Gain 3.Input and Output Impedance

APPARATUS REQUIRED : S.No 1 2 3. 4. 5. 6 7 8. 9 Components Power supply CRO Capacitor Capacitor CRO Breadboard Resistor Resistor Resistor Type/Range 1µf 31.8µf 1mf/25V 1KΩ 100 KΩ 600Ω Quantity 1 1 1 1 1 1 1 1 1

10 10 11 12.

Resistor Function generator Connecting Wire Capacitor

1.2 kΩ 5.835µf

1 1 As per required 1

PROCEDURE: 1.Circuit Connections are given as per the circuit diagram 2.A required voltage through fn is supplied into circuit. 3.The output is viewed through CRO 4.Using CRO Amplitude and Time periods are calculated 5.From the Time period of Oscillations the frequency is calculated 6. The graph is drawn with the plotted reading Frequency = 1/Time period CIRCUIT DIAGRAM:

No FREQUENCY INPUT OUTPUT Av =Vo/Vi GAIN in db (20logAv) .TABULAR COLUMN: S.

APPARATUS REQUIRED : S. 3.No.MODEL GRAPH: RESULT: Thus the frequency response curve of the FET amplifier was drawn and the gain is calculated Exp.No 1.7 CHARACTERISTICS OF CLASS-B P OWER AMPLIFIER AIM: To design and construct a Class-B power Amplifier and to determine its efficiency. Components Power supply CRO Function generator Type/Range (0-30)V (0-30)V (0-1)MHz 1 1 1 Quantity . 2.

Calculate the Bandwidth from the graph.Calculate the efficiency. CIRCUIT DIAGRAM: .Note down the phase angle . 4.PROCEDURE: 1.bandwidth.using the signal generator. 3. Zo= Vload – Vno load/(V load) *100 6.Keeping the INPUT voltage constant . Zi=Vi Rs/(Vs+Vi) Output impedance. 2. Find the input and output Impedance Input Impedance.input and output impedance. 7.Vary the frequency from 0 Hz to 1 Hz in Regular steps and note down the corresponding output voltage. 8. Connect the Circuit as per the circuit diagram.n=Po/Pin. Set Vs=50mV(say).Plot the graph : gain(db) Vs frequency 5.

TABULAR COLUMN: S.No Vo(volts) Gain=Vo/Vs Gain(db)=20log(Vo/Vs)OUTPUT Po=Vo2/2RL n% .

MODEL GRAPH: RESULT: Thus the efficiency of the Class-B power amplifier curve is drawn successfully .

5.9 KΩ Quantity 1 1 1 1 1 1 1 1 1 . PROCEDURE: DRB 600Ω 1.No 1 2 3. 9 DCB 10 FORMULA Common mode rejection ratio=Ad/Ac Ad=Differential mode gain Ac=Common mode gain where Ad=Vo/Vd.Exp.No. APPARATUS REQUIRED : S.2 kΩ Components RPS (0-30)V Signal generator Capacitor CRO Breadboard Transistor Resistor Type/Range 470µf 1mf/25V BC107 3. 6 7 8. Vd=V1 –V2 .V1 V2= input voltage Ac=Vo/Vc .8 CHARACTERISTICS OF DIFFERENTIAL AMPLI FIER AIM: To design and construct a Class-B power Amplifier and to determine its efficiency. Vo=output voltage measured. Vc=(V1+V2)/2.

4. COMMON MODE: 1. Connect the Circuit as per the diagram.Set V1=50Mv using the signal generator . 3. 2.Calculate the common mode rejection ratio using the given formula CIRCUIT DIAGRAM: DIFFERENTIAL MODE: COMMON MODE: . 4.Set V1=50mV and V2=65Mv using the signal generator. 3.Connect the circuit as per the diagram . 2.DIFFERENTAIL MODE: 1.Find the output voltage across V0 using multimeter.Find the corresponding output voltages across V01 and V02 using CRO.Calculate Common mode rejection ratio using the given formula.

.

No V1 V2 Output voltage Vd=V1-V2 Ad=V0/Vd COMMON MODE: S. RESULT: Thus the differential amplifier was verified for common mode and differential mode configuration Further common mode rejection ratio was found . Ac=Vo/Vc .No Input voltage Output voltage Vd=V1-V2 Vc=(V1+V2)/2.TABULAR COLUMN: DIFFERENTIAL MODE: S.

Take the symbols from the library. 4.MODELLING OF ELECTRONIC CIRCUITS AIM: To draw the PSPICE – modeling of electronics circuits using PCM AP PARATUS REQUIRED: 1.PCM PROCEDURE: 1. 6.P SPICE software 2. Give the values for all components 7.No. 10. Set the (frequency) time period for required waveform.Start .Window will open .Do the run process to get the output.Exp. 8.Project.Fit the voltage marker to measure the voltage at I/p and O/p . 3. .8 P SPICE.All programs.Open New.Pspice Project Dialog Box will Open Create new 5.read family – Capture lite edition 2.

CIRCUITDIAGRAM: MODEL GRAPH: RESULT : Thus Pspice –modelling of electronic devices is drawn and output is executeed successfully .