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Bulletin I2402 rev. A 07/00 25RIA SERIES MEDIUM POWER THYRISTORS Features Improved glass passivation for

Bulletin I2402 rev. A 07/00

25RIA SERIES

MEDIUM POWER THYRISTORS

Features

Improved glass passivation for high reliability and exceptional stability at high temperaturerev. A 07/00 25RIA SERIES MEDIUM POWER THYRISTORS Features High di/dt and dv/dt capabilities Standard package

High di/dt and dv/dt capabilitiesreliability and exceptional stability at high temperature Standard package Low thermal resistance Metric threads

Standard packageat high temperature High di/dt and dv/dt capabilities Low thermal resistance Metric threads version available

Low thermal resistanceHigh di/dt and dv/dt capabilities Standard package Metric threads version available Types up to 1600V V

Metric threads version availabledv/dt capabilities Standard package Low thermal resistance Types up to 1600V V D R M /

Types up to 1600V V D R M / V R R M DRM / V RRM

Typical Applications

Medium power switchingup to 1600V V D R M / V R R M Typical Applications Phase control

Phase control applications/ V R R M Typical Applications Medium power switching Can be supplied to meet stringent

Can be supplied to meet stringent military, aerospace and other high-reliability requirementsMedium power switching Phase control applications Major Ratings and Characteristics     25RIA

Major Ratings and Characteristics

   

25RIA

 

Parameters

10 to 120

140 to 160

Units

I T(AV)

 

25

25

A

@

T C

85

85

°C

I T(RMS)

 

40

40

A

I TSM

@ 50Hz

420

398

A

@

60Hz

440

415

A

I 2 t

@ 50Hz

867

795

A 2 s

@

60Hz

790

725

A 2 s

V

DRM /V RRM

100 to 1200

1400 to 1600

V

t q

typical

 

110

µs

T

J

- 65 to 125

°C

Stud Version

25A

Case Style TO-208AA (TO-48)

Case Style

TO-208AA (TO-48)

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1

25RIA Series

Bulletin

I2402

rev. A

07/00

25RIA Series Bulletin I2402 rev. A 07/00 ELECTRICAL SPECIFICATIONS Voltage Ratings   Voltage V D R

ELECTRICAL SPECIFICATIONS Voltage Ratings

 

Voltage

V DRM /V RRM , max. repetitive

V RSM , maximum non-

I DRM /I RRM max.

Type number

Code

peak and off-state voltage (1)

repetitive peak voltage (2)

@ T J = T J max.

V

V

mA

 

10

100

150

20

20

200

300

 

40

400

500

60

600

700

25RIA

80

800

900

10

100

1000

1100

120

1200

1300

140

1400

1500

160

1600

1700

(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs (2) For voltage pulses with t p 5ms

On-state Conduction

 

25RIA

     
 

Parameter

10 to 120

140 to 160

Units

Conditions

I T(AV)

Max. average on-state current

25

25

 

A

180° sinusoidal conduction

 

@ Case temperature

85

85

°C

 

I T(RMS)

Max. RMS on-state current

40

40

 

A

 

I TSM

Max. peak, one-cycle

420

398

 

A

t

= 10ms

No voltage

 

non-repetitive surge current

440

415

 

t

= 8.3ms

reapplied

 

350

335

t

= 10ms

100% V RRM

370

350

t

= 8.3ms

reapplied

Sinusoidal half wave,

I 2 t

Maximum I 2 t for fusing

867

795

A

2 s

t

= 10ms

No voltage

Initial T J = T J max.

 

790

725

 

t

= 8.3ms

reapplied

615

560

t

= 10ms

100% V RRM

560

510

t

= 8.3ms

reapplied

I 2 t

Maximum I 2 t for fusing

8670

7950

2 s

A

t

= 0.1 to 10ms, no voltage reapplied, T J = T J max.

V T(TO)1

Low level value of threshold

0.99

0.99

 

V

(16.7% x π x I T(AV) < I < π x I T(AV) ), T J = T J max.

voltage

 

V T(TO)2

High level value of threshold

1.40

1.15

(I

> π x I T(AV) ),T J = T J max.

 

voltage

 

r t1

Low level value of on-state

10.1

11.73

m

(16.7% x π x I T(AV) < I < π x I T(AV) ), T J = T J max.

slope resistance

r t2

High level value of on-state

5.7

10.05

 

(I

> π x I T(AV) ),T J = T J max.

 

slope resistance

 

V TM

Max. on-state voltage

1.70

---

 

V

I

pk = 79 A, T J = 25°C

 
 

---

1.80

   

I H

Maximum holding current

130

mA

 

T

J = 25°C. Anode supply 6V, resistive load,

I L

Latching current

200

 
25RIA Series Bulletin I2402 rev. A 07/00 Switching   Parameter 25RIA Units Conditions di/dt Max.

25RIA Series

Bulletin

I2402

rev. A

07/00

Switching

 

Parameter

25RIA

Units

Conditions

di/dt

Max. rate of rise of turned-on

   

T

J = T J max., V DM = rated V DRM

current

V DRM

600V

200

A/µs

Gate pulse = 20V, 15, t p = 6µs, t r = 0.1µs max.

 

V

DRM 800V

180

I TM = (2x rated di/dt) A

V

DRM 1000V

160

V

DRM 1600V

150

t gt

Typical turn-on time

0.9

 

T

J = 25°C,

 

at = rated V DRM /V RRM , T J = 125°C

t rr

Typical reverse recovery time

4

µs

T

J = T J max.,

 

I TM = I T(AV) , t p > 200µs, di/dt = -10A/µs

t q

Typical turn-off time

110

T

J = T J max., I TM = I T(AV) , t p > 200µs, V R = 100V,

 

di/dt = -10A/µs, dv/dt = 20V/µs linear to

67% V DRM , gate bias 0V-100W

(*) t q = 10µsup to 600V, t q = 30µs up to 1600V available on special request.

Blocking

 

Parameter

25RIA

Units

Conditions

dv/dt

Max. critical rate of rise of

100

V/µs

T

J = T J max. linear to 100% rated V DRM

off-state voltage

300 (*)

T

J = T J max. linear to 67% rated V DRM

(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 25RIA160S90.

Triggering

 

Parameter

25RIA

Units

Conditions

 

P GM

Maximum peak gate power

8.0

W

T

J = T J max.

P G(AV)

Maximum average gate power

2.0

 

I GM

Max. peak positive gate current

1.5

A

T

J = T J max.

-V GM

Maximum peak negative

10

V

T

J = T J max.

gate voltage

 

I GT

DC gate current required

90

 

T

J = - 65°C

Max. required gate trigger current/

to trigger

60

mA

T

J =

25°C

voltage are the lowest value which will trigger all units 6V anode-to-

 

35

T

J = 125°C

cathode applied

V GT

DC gate voltage required

3.0

 

T

J = - 65°C

to trigger

2.0

V

T

J =

25°C

 

1.0

V

T

J =

125°C

I GD

DC gate current not to trigger

2.0

mA

T

J = T J max., V DRM = rated value

V GD

DC gate voltage not to trigger

0.2

V

T

J = T J max.

Max. gate current/ voltage not to trigger is the max. value which

 

V

DRM = rated value

will not trigger any unit with rated V DRM anode-to-cathode applied

25RIA Series

Bulletin

I2402

rev. A

07/00

25RIA Series Bulletin I2402 rev. A 07/00 Thermal and Mechanical Specification   Parameter 25RIA Units

Thermal and Mechanical Specification

 

Parameter

25RIA

Units

Conditions

T J

Max. operating temperature range

- 65

to 125

°C

 

T stg

Max. storage temperature range

- 65

to 125

°C

R thJC

Max. thermal resistance, junction to case

 

0.75

K/W

DC operation

R thCS

Max. thermal resistance,

 

0.35

K/W

Mounting surface, smooth, flat and greased

case to heatsink

 

T

Mounting torque

to nut

to device

   
 

20(27.5)

25

lbf-in

Lubricated threads

0.23(0.32)

0.29

kgf.m

(Non-lubricated threads)

2.3(3.1)

2.8

Nm

 

wt

Approximate weight

14

(0.49)

g (oz)

 
 

Case style

TO-208AA (TO-48)

See Outline Table

R thJC Conduction

(The following table shows the increment of thermal resistence R thJC when devices operate at different conduction angles than DC)

Conduction angle

Sinusoidal conduction

Rectangular conduction

Units

Conditions

180°

0.17

0.13

K/W

T J = T J max.

120°

0.21

0.22

90°

0.27

0.30

60°

0.40

0.42

30°

0.69

0.70

Ordering Information Table

Device Code

25

RIA

160

M

S90

1
1
2
2
3
3
4
4
5
5
1
1

- Current code

2
2

- Essential part number

3
3

- Voltage code: Code x 10 = V RRM (See Voltage Rating Table)

4
4

- = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A

None

M

= Stud base TO-208AA (TO-48) M6 X 1

5
5

- Critical dv/dt:

None = 300V/µs (Standard value)

S90

= 1000V/µs (Special selection)

25RIA Series Bulletin I2402 rev. A 07/00 Outline Table Case Style TO-208AA (TO-48) All dimensions

25RIA Series

Bulletin

I2402

rev. A

07/00

Outline Table

Case Style TO-208AA (TO-48) All dimensions in millimeters (inches)

Case Style TO-208AA (TO-48)

All dimensions in millimeters (inches)

130 25RIA Series (100 to 1200V) R thJC (DC) = 0.75 K/W 120 110 Conduction
130
25RIA Series (100 to 1200V)
R
thJC
(DC) = 0.75 K/W
120
110
Conduction Angle
100
30°
60° 90°
120°
90
180°
80
0
5
10
15
20
25
30
Maximum Allowable Case Temperature (°C)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristic

130 25RIA Series (100 to 1200V) R (DC) = 0.75 K/W thJC 120 110 Conduction
130
25RIA Series (100 to
1200V)
R
(DC) = 0.75 K/W
thJC
120
110
Conduction Period
30°
100
60°
90°
120°
90
180°
DC
80
0
10
20
30
40
Maximum Allowable Case Temperature (°C)

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristic

25RIA Series 2 K/W 3 K/W Bulletin I2402 rev. A 07/00 4K/W R 5 K/W
25RIA Series
2 K/W
3 K/W
Bulletin
I2402
rev. A
07/00
4K/W
R
5 K/W
45
=1 K/W- Delta R
180°
40
thSA
7 K/W
120°
90°
35
60°
30°
30
25
RMS
Limit
20
15
Conduction Angle
10
25RIA Series
(100
to 1200V)
5
T
=
125°C
J
0
0
5
10
15
20
25
30 0
25
50
75
100
125
Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - On-state Power Loss Characteristics

R thSA = 1 K/W - Delta R 2 K/W 3 K/W 4 K/W 60
R
thSA
= 1 K/W - Delta R
2 K/W
3 K/W
4 K/W
60
DC
5 K/W
55
180°
50
120°
90°
45
60°
40
30°
7 K/W
35
30
25
RMS Limit
20
Conduction Period
15
25RIA Series
10
(100 to 1200V)
5
T
= 125°C
J
0
0
5
10
15
20
25
30
35
40 0
25
50
75
100
125
Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig. 4 - On-state Power Loss Characteristics

375 At Any Rated Load Condition And With Rated V Applied Following Surge. RRM 350
375
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
350
Initial T = 125°C
J
@ 60 Hz 0.0083
s
325
@ 50 Hz 0.0100
s
300
275
250
225
200
25RIA Series
(100
to 1200V)
175
1
10
100
Peak Half Sine Wave On-state Current (A)

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

450 Maximum Non Repetitive Surge Current 425 Versus Pulse Train Duration. Control Of Conduction 400
450
Maximum
Non
Repetitive
Surge Current
425
Versus Pulse Train Duration. Control
Of
Conduction
400
May Not Be Maintained.
Initial T = 125°C
J
375
No Voltage
Reapplied
350
Rated V
RRM
Reapplied
325
300
275
250
225
200
25RIA Series
175
(100 to
1200V)
150
0.01
0.1
1
Peak Half Sine Wave On-state Current (A)

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

25RIA Series Bulletin I2402 rev. A 07/00 1000 25RIA Series (100 to 1200V) 100 10

25RIA Series

Bulletin

I2402

rev. A

07/00

1000 25RIA Series (100 to 1200V) 100 10 T = 25°C J T = 125°C
1000
25RIA Series
(100 to
1200V)
100
10
T
= 25°C
J
T
= 125°C
J
1
0.5
1
1.5
2
2.5
Instantaneous On-state Current (A)

Instantaneous On-state Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

130 25RIA Series (1400 to 1600V) R (DC) = 0.75 K/W thJC 120 110 Conduction
130
25RIA
Series (1400 to 1600V)
R
(DC) =
0.75 K/W
thJC
120
110
Conduction Angle
100
30°
60°
90°
120°
90
180°
80
0
5
10
15
20
25
30
Maximum Allowable Case Temperature (°C)

Average On-state Current (A)

Fig. 8 - Current Ratings Characteristics

130 25RIA Series (1400 to 1600V) R (DC) = 0.75 K/W thJC 120 110 Conduction
130
25RIA Series (1400 to
1600V)
R
(DC) = 0.75 K/W
thJC
120
110
Conduction
Period
100
90
90°
80
60°
120°
DC
30°
180°
70
0
5
10
15
20
25
30
35
40
45
Maximum Allowable Case Temperature (°C)

Average On-state Current (A)

Fig. 9 - Current Ratings Characteristics

R thSA = 0.5 K/W - Delta R 1 K/W 1.5 K/W 2 K/W 2.5
R
thSA
= 0.5 K/W - Delta R
1 K/W
1.5 K/W
2 K/W
2.5 K/W
3 K/W
3.5 K/W
4.5 K/W
6 K/W
45
180°
40
120°
7.5K/W
90°
35
60°
30°
30
25
RMS
Limit
20
15
Conduction Angle
10
25RIA Series
(1400 to 1600V)
5
T
= 125°C
J
0
0
5
10
15
20
25
30 0
25
50
75
100
125
Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig. 10 - On-state Power Loss Characteristics

25RIA Series Bulletin I2402 rev. A 07/00 1.5K/W 2 K/W 1 K/W 2.5 K/W 3K/W
25RIA Series
Bulletin
I2402
rev. A
07/00
1.5K/W
2 K/W
1 K/W
2.5 K/W
3K/W
R
60
DC
4 K/W
=0.5 K/W- Delta R
180°
thSA
50
120°
5.5 K/W
90°
60°
7.5 K/W
40
30°
30
RMS Limit
20
Conduction Period
25RIA Series
10
(1400 to 1600V)
T
= 125°C
J
0
0
5
10
15
20
25
30
35
40 0
25
50
75
100
125
Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig. 11 - On-state Power Loss Characteristics

375 At Any Rated Load Condition And With Rated V Applied Following Surge. 350 RRM
375
At Any Rated
Load Condition And With
Rated V
Applied Following Surge.
350
RRM
Initial
T =
125°C
J
325
@ 60 Hz 0.0083
s
@ 50 Hz 0.0100
s
300
275
250
225
200
25RIA Series
175
(1400 to 1600V)
150
1
10
100
Peak Half Sine Wave On-state Current (A)

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 12 - Maximum Non-Repetitive Surge Current

400 Maximum Non Repetitive Surge Current 375 Versus Pulse Train Duration. Control Of Conduction May
400
Maximum
Non Repetitive
Surge Current
375
Versus Pulse
Train Duration.
Control
Of
Conduction
May Not Be Maintained.
350
Initial T = 125°C
J
No Voltage
Reapplied
325
Rated V
Reapplied
RRM
300
275
250
225
200
25RIA Series
175
(1400 to 1600V)
150
0.01
0.1
1
Peak Half Sine Wave On-state Current (A)

Pulse Train Duration (s)

Fig. 13 - Maximum Non-Repetitive Surge Current

1000 100 T = 25°C J T = 125°C 10 J 25RIA Series (1400 to
1000
100
T
= 25°C
J
T
= 125°C
10
J
25RIA Series
(1400 to 1600V)
1
Instantaneous On-state Current (A)

0123456

Instantaneous On-state Voltage (V)

Fig. 14 - Forward Voltage Drop Characteristics

25RIA Series Bulletin I2402 rev. A 07/00 1 Steady State Value R = 0.75 K/W
25RIA Series
Bulletin
I2402
rev. A
07/00
1
Steady State Value
R
= 0.75 K/W
thJC
(DC Operation)
0.1
25RIA Series
0.01
0.001
0.01
0.1
1
10
Transient Thermal Impedance Z
(K/W)
thJC

Square Wave Pulse Duration (s)

Fig. 15 - Thermal Impedance Z thJC Characteristics

100 Rectangular gate pulse (1) PGM = 16W, tp = 4ms a) Recommended load line
100
Rectangular gate pulse
(1) PGM
= 16W, tp = 4ms
a) Recommended load line for
(2) PGM
= 30W, tp = 2ms
rated di/dt :
10V,
20ohms
(3) PGM
= 60W, tp = 1ms
tr <=0.5 µs, tp
>=
6
µs
(4) PGM
= 60W, tp = 1ms
b) Recommended load line
for
<=30%
rated di/dt : 10V, 65ohms
10
tr<=1
µs,
tp
>=
6
µs
(a)
(b)
1
(4)
(3)
(2)
(1)
VGD
IGD
25RIA Series Frequency
Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Tj = -65 °C
Tj = 25 °C
Tj = 125 °C
Instantaneous Gate Voltage (V)

Instantaneous Gate Current (A)

Fig. 16 - Gate Characteristics

Gate Current (A) Fig. 16 - Gate Characteristics WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.

http://www.irf.com

Fax-On-Demand: +44 1883 733420

Data and specifications subject to change without notice.