Bulletin I2402 rev. A 07/00
25RIA SERIES
MEDIUM POWER THYRISTORS
Features
Improved glass passivation for high reliability and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1600V V _{D}_{R}_{M} / V _{R}_{R}_{M}
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military, aerospace and other highreliability requirements
Major Ratings and Characteristics
25RIA 

Parameters 
10 to 120 
140 to 160 
Units 

^{I} T(AV) 
25 
25 
A 

@ 
T _{C} 
85 
85 
°C 

^{I} T(RMS) 
40 
40 
A 

I _{T}_{S}_{M} 
@ 50Hz 
420 
398 
A 

@ 
60Hz 
440 
415 
A 

I ^{2} t 
@ 50Hz 
867 
795 
A ^{2} s 

@ 
60Hz 
790 
725 
A ^{2} s 

^{V} 
DRM ^{/}^{V} RRM 
100 to 1200 
1400 to 1600 
V 

t _{q} 
typical 
110 
µs 

^{T} 
J 
 65 to 125 
°C 
Stud Version
25A
Case Style
TO208AA (TO48)
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1
25RIA Series
Bulletin
I2402
rev. A
07/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage 
V _{D}_{R}_{M} /V _{R}_{R}_{M} , max. repetitive 
V _{R}_{S}_{M} , maximum non 
I _{D}_{R}_{M} /I _{R}_{R}_{M} max. 

Type number 
Code 
peak and offstate voltage (1) 
repetitive peak voltage (2) 
@ T _{J} = T _{J} max. 
V 
V 
mA 

10 
100 
150 
20 

20 
200 
300 

40 
400 
500 

60 
600 
700 

25RIA 
80 
800 
900 
10 
100 
1000 
1100 

120 
1200 
1300 

140 
1400 
1500 

160 
1600 
1700 
(1) Units may be broken over nonrepetitively in the offstate direction without damage, if dI/dt does not exceed 20A/µs (2) For voltage pulses with t _{p} ≤ 5ms
Onstate Conduction
25RIA 

Parameter 
10 to 120 
140 to 160 
Units 
Conditions 

I _{T}_{(}_{A}_{V}_{)} 
Max. average onstate current 
25 
25 
A 
180° sinusoidal conduction 

@ Case temperature 
85 
85 
°C 

I _{T}_{(}_{R}_{M}_{S}_{)} 
Max. RMS onstate current 
40 
40 
A 

I _{T}_{S}_{M} 
Max. peak, onecycle 
420 
398 
A 
t 
= 10ms 
No voltage 

nonrepetitive surge current 
440 
415 
t 
= 8.3ms 
reapplied 

350 
335 
t 
= 10ms 
100% V _{R}_{R}_{M} 

370 
350 
t 
= 8.3ms 
reapplied 
Sinusoidal half wave, 

I ^{2} t 
Maximum I ^{2} t for fusing 
867 
795 
A 
^{2} s 
t 
= 10ms 
No voltage 
Initial T _{J} = T _{J} max. 
790 
725 
t 
= 8.3ms 
reapplied 

615 
560 
t 
= 10ms 
100% V _{R}_{R}_{M} 

560 
510 
t 
= 8.3ms 
reapplied 

I ^{2} √t 
Maximum I ^{2} √t for fusing 
8670 
7950 
^{2} √s A 
t 
= 0.1 to 10ms, no voltage reapplied, T _{J} = T _{J} max. 

V _{T}_{(}_{T}_{O}_{)}_{1} 
Low level value of threshold 
0.99 
0.99 
V 
(16.7% x π x I _{T}_{(}_{A}_{V}_{)} < I < π x I _{T}_{(}_{A}_{V}_{)} ), T _{J} = T _{J} max. 

voltage 

V _{T}_{(}_{T}_{O}_{)}_{2} 
High level value of threshold 
1.40 
1.15 
(I 
> π x I _{T}_{(}_{A}_{V}_{)} ),T _{J} = T _{J} max. 

voltage 

r _{t}_{1} 
Low level value of onstate 
10.1 
11.73 
mΩ 
(16.7% x π x I _{T}_{(}_{A}_{V}_{)} < I < π x I _{T}_{(}_{A}_{V}_{)} ), T _{J} = T _{J} max. 

slope resistance 

r _{t}_{2} 
High level value of onstate 
5.7 
10.05 
(I > π x I _{T}_{(}_{A}_{V}_{)} ),T _{J} = T _{J} max. 

slope resistance 

V _{T}_{M} 
Max. onstate voltage 
1.70 
 
V 
I 
_{p}_{k} = 79 A, T _{J} = 25°C 

 
1.80 

I _{H} 
Maximum holding current 
130 
mA 
T _{J} = 25°C. Anode supply 6V, resistive load, 

I _{L} 
Latching current 
200 
_{2}
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25RIA Series
Bulletin
I2402
rev. A
07/00
Switching
Parameter 
25RIA 
Units 
Conditions 

di/dt 
Max. rate of rise of turnedon 
T 
_{J} = T _{J} max., V _{D}_{M} = rated V _{D}_{R}_{M} 

current 
V _{D}_{R}_{M} ≤ 600V 
200 
A/µs 
Gate pulse = 20V, 15Ω, t _{p} = 6µs, t _{r} = 0.1µs max. 

V 
_{D}_{R}_{M} ≤ 800V 
180 
I _{T}_{M} = (2x rated di/dt) A 

V 
_{D}_{R}_{M} ≤ 1000V 
160 

V 
_{D}_{R}_{M} ≤ 1600V 
150 

t _{g}_{t} 
Typical turnon time 
0.9 
T 
_{J} = 25°C, 

at = rated V _{D}_{R}_{M} /V _{R}_{R}_{M} , T _{J} = 125°C 

t _{r}_{r} 
Typical reverse recovery time 
4 
µs 
T 
_{J} = T _{J} max., 

I _{T}_{M} = I _{T}_{(}_{A}_{V}_{)} , t _{p} > 200µs, di/dt = 10A/µs 

t _{q} 
Typical turnoff time 
110 
T 
_{J} = T _{J} max., I _{T}_{M} = I _{T}_{(}_{A}_{V}_{)} , t _{p} > 200µs, V _{R} = 100V, 

di/dt = 10A/µs, dv/dt = 20V/µs linear to 

67% V _{D}_{R}_{M} , gate bias 0V100W 
(*) t _{q} = 10µsup to 600V, t _{q} = 30µs up to 1600V available on special request.
Blocking
Parameter 
25RIA 
Units 
Conditions 

dv/dt 
Max. critical rate of rise of 
100 
V/µs 
T 
_{J} = T _{J} max. linear to 100% rated V _{D}_{R}_{M} 
offstate voltage 
300 (*) 
T 
_{J} = T _{J} max. linear to 67% rated V _{D}_{R}_{M} 
(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 25RIA160S90.
Triggering
Parameter 
25RIA 
Units 
Conditions 

P _{G}_{M} 
Maximum peak gate power 
8.0 
W 
T 
_{J} = T _{J} max. 

P _{G}_{(}_{A}_{V}_{)} 
Maximum average gate power 
2.0 

I _{G}_{M} 
Max. peak positive gate current 
1.5 
A 
T 
_{J} = T _{J} max. 

V _{G}_{M} 
Maximum peak negative 
10 
V 
T 
_{J} = T _{J} max. 

gate voltage 

I _{G}_{T} 
DC gate current required 
90 
T 
_{J} =  65°C 
Max. required gate trigger current/ 

to trigger 
60 
mA 
T 
_{J} = 25°C 
voltage are the lowest value which will trigger all units 6V anodeto 

35 
T 
_{J} = 125°C 
cathode applied 

V _{G}_{T} 
DC gate voltage required 
3.0 
T 
_{J} =  65°C 

to trigger 
2.0 
V 
T 
_{J} = 25°C 

1.0 
V 
T 
_{J} = 125°C 

I _{G}_{D} 
DC gate current not to trigger 
2.0 
mA 
T 
_{J} = T _{J} max., V _{D}_{R}_{M} = rated value 

V _{G}_{D} 
DC gate voltage not to trigger 
0.2 
V 
T 
_{J} = T _{J} max. 
Max. gate current/ voltage not to trigger is the max. value which 
V 
_{D}_{R}_{M} = rated value will not trigger any unit with rated V _{D}_{R}_{M} anodetocathode applied 
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25RIA Series
Bulletin
I2402
rev. A
07/00
Thermal and Mechanical Specification
Parameter 
25RIA 
Units 
Conditions 

T _{J} 
Max. operating temperature range 
 65 
to 125 
°C 

T _{s}_{t}_{g} 
Max. storage temperature range 
 65 
to 125 
°C 

R _{t}_{h}_{J}_{C} 
Max. thermal resistance, junction to case 
0.75 
K/W 
DC operation 

R _{t}_{h}_{C}_{S} 
Max. thermal resistance, 
0.35 
K/W 
Mounting surface, smooth, flat and greased 

case to heatsink 

T 
Mounting torque 
to nut 
to device 

20(27.5) 
25 
lbfin 
Lubricated threads 

0.23(0.32) 
0.29 
kgf.m 
(Nonlubricated threads) 

2.3(3.1) 
2.8 
Nm 

wt 
Approximate weight 
14 
(0.49) 
g (oz) 

Case style 
TO208AA (TO48) 
See Outline Table 
∆R _{t}_{h}_{J}_{C} Conduction
(The following table shows the increment of thermal resistence R _{t}_{h}_{J}_{C} when devices operate at different conduction angles than DC)
Conduction angle 
Sinusoidal conduction 
Rectangular conduction 
Units 
Conditions 
180° 
0.17 
0.13 
K/W 
T _{J} = T _{J} max. 
120° 
0.21 
0.22 

90° 
0.27 
0.30 

60° 
0.40 
0.42 

30° 
0.69 
0.70 
Ordering Information Table
Device Code
25 
RIA 
160 
M 
S90 
1

 Current code 

2

 Essential part number 

3

 Voltage code: Code x 10 = V _{R}_{R}_{M} (See Voltage Rating Table) 

4

 = Stud base TO208AA (TO48) 1/4" 28UNF2A None 

M = Stud base TO208AA (TO48) M6 X 1 

5

 Critical dv/dt: 
None = 300V/µs (Standard value) 
S90
= 1000V/µs (Special selection)
_{4}
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25RIA Series
Bulletin
I2402
rev. A
07/00
Outline Table
Case Style TO208AA (TO48)
All dimensions in millimeters (inches)
Average Onstate Current (A)
Fig. 1  Current Ratings Characteristic
Average Onstate Current (A)
Fig. 2  Current Ratings Characteristic
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Average Onstate Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3  Onstate Power Loss Characteristics
Average Onstate Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4  Onstate Power Loss Characteristics
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5  Maximum NonRepetitive Surge Current
Pulse Train Duration (s)
Fig. 6  Maximum NonRepetitive Surge Current
_{6}
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25RIA Series
Bulletin
I2402
rev. A
07/00
Instantaneous Onstate Voltage (V)
Fig. 7  Forward Voltage Drop Characteristics
Average Onstate Current (A)
Fig. 8  Current Ratings Characteristics
Average Onstate Current (A)
Fig. 9  Current Ratings Characteristics
Average Onstate Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 10  Onstate Power Loss Characteristics
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Average Onstate Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 11  Onstate Power Loss Characteristics
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 12  Maximum NonRepetitive Surge Current
Pulse Train Duration (s)
Fig. 13  Maximum NonRepetitive Surge Current
0123456
Instantaneous Onstate Voltage (V)
Fig. 14  Forward Voltage Drop Characteristics
_{8}
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Square Wave Pulse Duration (s)
Fig. 15  Thermal Impedance Z _{t}_{h}_{J}_{C} Characteristics
Instantaneous Gate Current (A)
Fig. 16  Gate Characteristics
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Data and specifications subject to change without notice.
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