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In electronics applications, analog signal processing is the most promising (besides use in
For digital, need to improve the on/off ratio substantially by some means
For mobile radio front ends graphene NEMS may may be the way to go Transparent RFIDs with CNT networks
Nokia Research Center
31 Cargse Graphene International School 2010/Pirjo Pasanen
Part II
ITO
350/ 88% Slightly yellow or brown
CNTs
400 / 88% Colourless
Superior Good
Good Good
Good Good
Commercial Process
High Volume
High Volume
Lab Scale
Nokia Research Center of Nokia Research Center and Helsinki University of Technology Collaboration
If/when that happens it will help to drive graphene to mainstream and then perhaps to electronics
All depends on the mass manufacturing
Nokia Research Center of Nokia Research Center and Helsinki University of Technology Collaboration
dF = [4
eff
kBT/(Q
0)]
The electric force on the gate: Fel Cg(Vgdc)2 + CgVgdc Vg Charge sensitivity dQ = dF.d/Vgdc
With graphene, the effective spring constant eff = meff 02 can be extremely low Measured f0: 10MHz ~ 200MHz and Q: 102 ~ 104
Nokia Research Center
39 Cargse Graphene International School 2010/Pirjo Pasanen
Chen et al. Nature Nanotechnology, 4, 861 (2009) Bench et.al. Science 315, 490 (2007)
For higher freqs we can reduce the dimensions of the system, but this has its limits
Size reduction decreases the maximum signal magnitude -> decrease in dynamical range
For a mechanical resonator under tension we can increase the freq by increasing the tension:
Build-in and electrostatic tension Changyao Chen et.al. Nature Nanotechnology 4, 861 (2009)
EDGE RX
1710...2170 MHz
Multiradio
Mobile terminal already have several radios: cellular, BlueTooth, WLAN
A
LB HB
D A D A D
EDGE TX
CPU CPU CPU CPU
Generic Multiradio RF
D A D A D A
Generic Multiradio BB
RAM
ROM
A D A
Generic Multiradio RF
D A D A D A
Generic Multiradio BB
RAM
ROM
Grand challenge
Some enablers still in their infancy
Nokia Research Center
42
On-board resonators (mainly power amplifier) Impedance levels may be a few ohms
Tuning range and repeatability are important! Power handling and unloaded-Q in PA resonators is the key issue
Have to withstand high power levels without degrading the signal
Interfacing the resonators with the rest of the circuitry may require active components (impedance matching)
Graphene transistors are the natural choice for this!
Nokia Research Center
44 Cargse Graphene International School 2010/Pirjo Pasanen
Spintronics
Very nice progress, but still in the far future
Thz radiation
Not only high freq electronics, but also radiation sources/detectors?
G A A IA D I A IA D G I A I I I IG A AI DG G D G IG GD G GG GI I G G IG D GD D D D D GG D GDDD GD G GD D D A D D TD DD D G TD D D D TT T DD T D T G T T D I G G D T T T D TT T T R T R R
100
1000
10000
100000
Faster electronics
Compared to RF frequency electronics, wider bandwidths, component compactness and improved spatial resolution are possible
Broadening IR spectrum into longer wave H2O FOG (0.1gm3 Visibility 50m
Commercial RF Spectrum
Deluge 150mm/Hr CO2 Heavy Rain 25mm/Hr H2O 100.0
O2
10.0
H2O
O2
1.0
DRIZZL 0.25mm/Hr
20 1Atm
0.1
O3
Visible
1000 THz 0.3m 100 THz 3 m
Infrared
10 THz 30 m
Sub-Millimeter
1 THz 0.30 mm
Millimeter
100 GHz 3 mm FCC 300GHz Radio Boundary
0.01 10 GHz 30 mm
ATTENUATION dB/Km
Semiconductor structures are small and cheap, but their output powers are of the order of mWs and often require cooling (QCL)
Detecting works a bit better, but sensitive detectors need cooling also
Better properties than in HEMT materials due to zero or tunable electron mass, high mobility
Conclusions on THz
There is still room for theoretical work Emitter and detector structures urgently needed
There are still a lot of uncertainties on device design issues even if the basic principles presented in the papers would be correct
How to effectively couple the plasmons to 3D em fields? Need antenna structures, but they in turn affect the behavioroaf the whole device -> need to model the whole structure to get he full picture
Gated structures are interesting because of the possibility to tune the frequencies by external voltage
For all practical purposes some tuning of freqs is essential, if this could be done only by voltage it would make life easier..
Conclusions
Graphene can make it but it wont be that easy Main benefits may come from the unique combination of properties, rather than any single performance parameter
Transparency & other optical properties Flexibility, mechanical strength Barrier properties, chemical stability, sensing Electronic properties: Mobility, ambipolar conduction etc.
Energy solutions
Flexible battery with higher power density and faster charging time, photovoltaics
Integrated sensors
Chemical and biochemical sensors
Acknowledgements
Martti Voutilainen/NRC Helsinki for transistor & inverter simulations Samiul Haque/NRC Cambridge for tranparent electrodes material Pertti Hakonen & Xuefeng Song/Aalto University and Risto Kaunisto/NRC for graphene NEMS material All colleagues and collaborators in Aalto U., NRC Helsinki and NRC Cambridge
Thanks!
Nokia Research Center
57 Cargse Graphene International School 2010/Pirjo Pasanen
Reading
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. Graphene field-effect-transistors with high on/off current ratio and large transport bandgap at room temperature , Fengnian Xia, Damon B. Farmer, Yu-ming Lin, and Phaedon Avouris. Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors, Damon B. Farmer, Hsin-Ying Chiu, Yu-Ming Lin, Keith A. Jenkins, Fengnian Xia, and Phaedon Avouris. Performance Advantages of Monolithically Patterned Wide-Narrow-Wide All-Graphene on Insulator Devices Dincer Unluer, Frank Tseng, Avik W. Ghosh, and Mircea R. Stan. Transport properties of HfO2 top-gated bilayer graphene field effect transistors, Zou, K.; Zhu, J. American Physical Society, APS March Meeting 2010, March 15-19,2010] Frank Schwierz,Graphene transistors, Nature Nanotechnology 5 , 487496 (2010) Integrated complementary graphene inverter F.Traversi, V.Russo, and R.Sordan, Appl. Phys. Lett. 94, 223312 (2009), Logic gates with a single graphene transistor, Sordan, Traversi, Russo, APL94, 073305 2009 Graphene frequency multiplier, Wang & al, IEEE ELECTRON DEVICE LETTERS 2009 Triple-Mode Single-Transistor Graphene Amplifier and Its Applications, Xuebei Yang, Guanxiong Liu,Alexander A. Balandin and Kartik Mohanram, arXiv:1010.1022v1 Chen et al. Nature Nanotechnology, 4, 861 (2009) Bench et.al. Science 315, 490 (2007) Ryzhii, Satou & Otsuji,Plasma waves in two-dimensional electron-hole system in gated graphene heterostructures, J App Phys 101, 024509 (2007) Mikhailov, Non-linear electromagnetic response of graphene, EPL, 79 (2007) 27002 Vafek Thermoplasma polaritons within scaling theory of single layer graphene, PRL 97, 266406 (2006) Wunsch, Stauber, Sols, Guinea, Dynamical polarization of graphene at finite doping, cond-mat/061063 Hwang&Sharma, Dielectric function, screening and plasmons in 2D graphene, cond-mat/0610561 Rana & Ahmad,Plasmon amplifications though stimulated emission at terahertz frequencies in graphene, arXiv:0704.0607