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Reg. No.

s 4810
2007. NOVEMBER/DECEMBER DEGREEEXAMINATION, B.E./B.TECh.
Annual Pattern - First Year Computer Science and Engineering

DEWCESAND CIRCUITS EC 1X11- ELECTRON


(Common to Information Technology) (Reguiation2004) Time : Three hours

1. 2.

Distinguish between intrinsic and extrinsic semiconductors.

4. 5. 6. 7. 8. g.

Draw the small signal model of JFET. Give the applications of astable and bistable multivibrators. Mention the advantagesof negative feedback' Define dark current of a photo diode. Drarv the Volt-Ampere characteristic of UJT. State the advantagesof monolithic ICs over discrete componentcircuits.

10. Define CMRR of an op-ampand write its expression.

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3.

What is quiescent point of a transistor amplifier?

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A germanium diode draws 50 mA with a forward bias of 0.27 V. The junction is ar room remperature of 27' C. Find the reverse saturation current of the diode.

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PARTA-(10 x2=20 marks)

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Answer ALL questions.

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Maximum : 100 marks

PARTB-(5x16=80marks) 11. (a) (i) Draw and explain the Volt-Ampere characteristic of PN junction (8) diode. Describe the application of PN junction diode as rectifier and (8) clipper. Or (b) (i) (ii) Describe the conductionof current in an intrinsic semiconductor.(8) Find the conductivity and resistivity of an intrinsic semiconductor at temperature of 300' K. It is given that ni = 2.5 x 1013/ crn3, (8) C' Itn= 3,800cm2/ sV, lto= 1,800cm2/ sV, Q = 1.6x 10-1e Draw the structure of a PNP transistor in CB configuration showing various current components. Define each component and (8) obtain its small signal and Large signai current gain. Explain any one type of biasing of a transistor amplifier and derive (8) its stability factor.

(ii)

12. (a)

(i)

(ii)

(b)

(i)

principleof operationand characteristics the Describe construction, (10) of an N- channel depletion type of MOSFET'

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13.

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(a)

(i)

Obtain the equivalent circuit of a singie-Stage CE transistor amplifier applicable at low frequencies. Derive its voltage and

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(ii)

Compare depletion and enhancementtype of MOSFETs.

(6)

current galn.

(10)
(6)

(ii)

Draw the four types of topology for feedbackof an amplifier. Or

(b)

(i) (ii)

Explain the operation of astable multivibrator.

(8)

Draw and explain the circuit of colpitts oscillator. Derive the (8) frequency of oscillation and conditions for oscillation.

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L4. (a)

(i) (ii)

Describethe working of SCR with its characteristics.

(8)

Describe the construction and operation of a solar celi. Give its (8) applications. Or

(b)

(i)

Briefly discuss the use of LED and LCD as dispiay devices in instrumentation. Comment on their relative merits and demerits. (8)
Diac is a bidirectional device. Explain.
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(ii)
15. (a)

(8)

(i)

Explain photolithographic processused in monolithic IC production. (8)


Show how an op-amp can be used as a voltage to current converter (8) and integrator.

(ii)

Or (b) (i) (ii)

Draw an active low-passfilter circuit using op-amp and describe.(8) Draw the monostable muitivibrator circuit using IC 555 timer and (8) obtain its frequency of oscillation.

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