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AOP610 Complementary Enhancement Mode Field Effect Transistor

General Description
The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. It is ESD protected. Standard product AOP610 is Pb-free (meets ROHS & Sony 259 specifications). AOP610L is a Green Product ordering option. AOP610 and AOP610L are electrically identical.

Features
n-channel p-channel -30V VDS (V) = 30V -6.2A (V GS=10V) ID = 7.7A (VGS=10V) RDS(ON) RDS(ON) < 24m (VGS=10V) < 39m (VGS = -10V) < 56m (VGS = -4.5V) < 42m (VGS=4.5V) ESD rating: 2000V (HBM)

PDIP-8
S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1

D2

D1 K2 G1 A2

N-ch P-ch

G2

S2

S1

n-channel Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain 7.7 TA=25C A Current 6.1 ID TA=70C Pulsed Drain Current B Power Dissipation Avalanche Current
B B

p-channel Max p-channel -30 20 -6.2 -4.9 -30 2.3 1.45 15 33 -55 to 150 Units V V A

IDM PD IAR EAR TJ, TSTG

TA=25C TA=70C

30 2.3 1.45 10 15 -55 to 150

W A mJ C

Repetitive avalanche energy 0.3mH

Junction and Storage Temperature Range

Thermal Characteristics: n-channel+schottky and p-channel Parameter Symbol A t 10s Maximum Junction-to-Ambient RJA Steady-State Maximum Junction-to-Ambient A C Steady-State RJL Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient RJA Steady-State Maximum Junction-to-Ambient A Steady-State RJL Maximum Junction-to-Lead C

Typ n-ch n-ch n-ch p-ch p-ch p-ch

Max 45 78 30 38.5 78 28 55 95 40 55 95 40

Units C/W C/W C/W C/W C/W C/W

Alpha & Omega Semiconductor, Ltd.

AOP610

N-Channel+Schottky Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, I D=4A VDS=5V, ID=7.7A Forward Transconductance IS=1A Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, I D=7.7A TJ=125C 10 1 20 2 20 29 32 18 0.5 Min 30 2 50 125 10 3 24 35 42 1 3 630 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge

VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz

543 142 76 2.1 11 5.3 1.9 4 4.7 4.9 16.2 3.5 15.7 7.9

3 15 7

VGS=10V, VDS=15V, I D=7.7A

VGS=10V, VDS=15V, RL=1.9, RGEN=3 IF=7.7A, dI/dt=100A/s IF=7.7A, dI/dt=100A/s

7 10 22 7 20 10

A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. RJL and RJC are equivalent terms referring to thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. F. Rev 3: Jul 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOP610

N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 25 20 ID (A) 15 10 5 0 0

10V

5V

4.5V 4V ID(A)

20 16 12 8 4 25C 0 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS=5V

3.5V

125C

VGS=3V 1 2 3 4

VDS (Volts) Fig 1: On-Region Characteristics

VGS (Volts) Figure 2: Transfer Characteristics

40 Normalized On-Resistance 35 RDS(ON) (m) 30 25 20 15 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=4.5V

1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 25 50 75 100 125 150 175 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=4A VGS=10V ID=7.7A

70 60 50 125C 40 30 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C

1.0E+01

ID=7.7A
1.0E+00 125C

RDS(ON) (m)

IS Amps

1.0E-01

25C

1.0E-02

1.0E-03 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics

Alpha & Omega Semiconductor, Ltd.

AOP610

N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge characteristics VDS=15V ID=7.7A Capacitance (pF) 1000 900 800 700 600 500 400 300 200 100 0 0 Crss 5 10 15 20 25 30 Coss Ciss f=1MHz VGS=0V

VDS (Volts) Figure 8: Capacitance Characteristics

100 RDS(ON) limited ID (Amps) 10 1ms 10ms 0.1s 1 1s 10s 0.1 0.1 1 VDS (Volts) DC 10

TJ(Max)=150C TA=25C 100s 10s Power W

20 TJ(Max)=150C TA=25C

15

10

100

0 0.001

0.01

0.1

10

100

1000

Figure 9: Maximum Forward Biased Safe Operating Area (Note E)

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 ZJA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Ton T 100 1000

Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1

10

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AOP610

P-Channel Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, I D=4A VDS=-5V, ID=-6.2A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, I D=-6.2A TJ=125C -1 30 -1.8 32 43 45 12.5 -0.77 Min -30 -1 -5 10 -3 39 52 56 -1 3 1250 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge

VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz

1040 179 134 5 16.8 8.7 3.4 5 9 5.7 22.7 10.2 21.7 13.6

10 22 12

VGS=-10V, VDS=-15V, I D=-6.2A

VGS=-10V, VDS=-15V, RL=2.5, RGEN=3 IF=-6.2A, dI/dt=100A/s IF=-6.2A, dI/dt=100A/s

12 11 30 20 27 18

2 A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in JA A any given application depends on the user'sthe user's specific board design. The current ratingon based 10sthe t 10s thermal resistance rating. specific board design. The current rating is based is the t on thermal resistance rating. value in any a given application depends on B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. RJL and RJC are equivalent terms referring to JA JL thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, Copper, 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz.duty cyclein a still air environment with TA=25C. The SOA E. These tests are performed rating. device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve curve provides a single pulse with the provides a single pulse rating. F. Rev 3: Jul 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOP610

P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


30 -10V 25 20 -ID (A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 90 Normalized On-Resistance 80 70 RDS(ON) (m) 60 50 40 30 20 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 RDS(ON) (m) 70 60 50 40 30 20 10 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=-6.2A 1.0E+01 1.0E+00 1.0E-01 -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=-10V VGS=-4.5V 1.60 VGS=-10V ID=-6.2A VGS=-4.5V ID=-4A VGS=-3V -2.5V 0 0 1 2 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics -6V -5V -4V -ID(A) -4.5V 25 VDS=-5V 20 15 10 5 125C 25C

-3.5V

1.40

1.20

1.00

0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature

Alpha & Omega Semiconductor, Ltd.

AOP610

P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


10 8 -VGS (Volts) 6 4 2 0 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-6.2A Capacitance (pF) 1500 1250 1000 750 500 250 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Coss

Ciss

Crss

100.0

TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 10s 100s 1ms 10ms

40 30 Power (W) 20 10 DC 0 0.001 0.01 0.1 1

TJ(Max)=150C TA=25C

-ID (Amps)

10.0

1.0

1s 10s

0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 ZJA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Single Pulse Ton 0.1 1 10 T 100 1000

0.01 0.00001

0.0001

0.001

0.01

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.