June 2002

AO4413 P-Channel Enhancement Mode Field Effect Transistor

General Description
The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

Features
VDS (V) = -30V ID = -15A RDS(ON) < 7m (VGS = -20V) RDS(ON) < 8.5m (VGS = -10V)

SOIC-8 Top View S S S G D D D D

G S

Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B

Maximum -30 25 -15 -12.8 -80 3 2.1 -55 to 150

Units V V A

TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG

W C

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C

Symbol t 10s Steady-State Steady-State RJA RJL

Typ 26 50 14

Max 40 75 24

Units C/W C/W C/W

Alpha & Omega Semiconductor, Ltd.

AO4413

Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-20V, ID=-15A Static Drain-Source On-Resistance TJ=125C VGS=-10V, ID=-15A VGS=-6V, ID=-10A VDS=-5V, ID=-15A -1.5 60 5.8 7.2 7.2 10.4 38 -0.72 -1 -4.2 7 8.7 8.5 -2.6 Min -30 -1 -5 100 -3.5 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC

gFS VSD IS

Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz

5034 1076 829 2.5 78 15.2 23.6 17.5 19.5 49 30.5 43 38

SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time

VGS=-10V, VDS=-15V, ID=-15A

VGS=-10V, VDS=-15V, RL=1.0, RGEN=3

IF=-15A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/s

A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. -15 B: Repetitive rating, pulse width limited by junction temperature. -12.8 C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.

AO4413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 -10V 40 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 12 Normalized On-Resistance VGS=-6V 10 RDS(ON) (m) 1.6 ID=-15A 1.4 VGS=-20V 1.2 VGS=-10V VGS=-4V 5 0 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -5V -6V -4.5V -ID(A) 20 15 10 25C 125C 30 25 VDS=-5V

-ID (A)

VGS=-10V

6 VGS=-20V 4 0 5 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 24 20 RDS(ON) (m) 16 12 8 4 4 8 12 16 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=-15A

0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature

-12.8

-15 1.0E+01
1.0E+00 1.0E-01 125C

-IS (A) 125C

1.0E-02 1.0E-03 1.0E-04

25C

25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8 -VGS (Volts) 6 4 2 0 0 10 20 30 40 50 60 70 80 -Qg (nC) Figure 7: Gate-Charge Characteristics 8000 VDS=-15V ID=-15A Capacitance (pF) 7000 6000 5000 4000 3000 2000 1000 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss

100.0 RDS(ON) limited -ID (Amps) 10.0 100s 1ms Power (W) 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC 10s

40

TJ(Max)=150C TA=25C

30

20

10

0 0.001

0.01

0.1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 1

-15
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

-12.8

PD 0.1 Ton Single Pulse 0.01 0.00001 T

0.0001

0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

0.001

0.01

100

1000

Alpha & Omega Semiconductor, Ltd.

ALPHA & OMEGA

SEMICONDUCTOR, INC.

SOP-8 Package Data

DIMENSIONS IN MILLIMETERS SYMBOLS

DIMENSIONS IN INCHES

A A1 A2 b c D E1 e E h L aaa

MIN 1.45 0.00 0.33 0.19 4.80 3.80 5.80 0.25 0.40 0

NOM 1.50 1.45 1.27 BSC

MAX 1.55 0.10 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10 8

MIN 0.057 0.000 0.013 0.007 0.189 0.150 0.228 0.010 0.016 0

NOM 0.059 0.057 0.050 BSC

MAX 0.061 0.004 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8

NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE

PACKAGE MARKING DESCRIPTION

RECOMMENDED LAND PATTERN

LOGO 4 4 1 3 FAYWLC

NOTE: LOGO 4413 F A Y W LC

- AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE

SOP-8 PART NO. CODE

UNIT: mm

PART NO. AO4413

CODE 4413

Rev. A

ALPHA & OMEGA

SEMICONDUCTOR, INC.
SO-8 Carrier Tape

SO-8 Tape and Reel Data

SO-8 Reel

SO-8 Tape
Leader / Trailer & Orientation