CopyrightWILEYVCHVerlagGmbH&Co.KGaA,69469Weinheim,Germany,2012.

SupportingInformation

forAdv.Funct.Mater.,DOI:10.1002/adfm.201102560

Autonomously Controlled Homogenous Growth of WaferSized High-Quality Graphene via a Smart Janus Substrate Dongyun Wan, Tianquan Lin, Hui Bi , Fuqiang Huang,* Xiaoming Xie, I.-Wei Chen, and Mianheng Jiang

Submitted to DOI: 10.1002/adfm. 201102560

Supporting Information
Autonomously controlled homogenous growth of wafer-sized highquality graphene via a smart Janus substrate
By Dongyun Wan,1 Tianquan Lin,1 Hui Bi,1 Fuqiang Huang,*,1 Xiaoming Xie,2 I-Wei Chen,3 Mianheng Jiang2 [*] Prof. F.Q. Huang, Dr. D.Y. Wan, Dr. T.Q. Lin, Dr. H.Bi CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P.R. China; E-mail: huangfq@mail.sic.ac.cn Prof. X.M. Xie, Prof. M.H. Jiang State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P.R. China; Prof. I-W Chen Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA

Figure S1. Wafer-sized (18 cm) graphene (c) grown on a smart substrate (b) of the 600 nmNi-coated Cu foil (a).

Submitted to

Figure S2. (a) AFM images of graphene grown on the smart substrate, then transferred to the SiO2/Si support. (b) the corresponding topographical image.

Figure S3. Randomly selected Raman spectra of graphene films grown on the smart substrate (a) and (b) after transfer to the SiO2/Si substrate, (c) statistical analysis of layer thickness determined from Raman spectra from >100 different locations.

Submitted to

Figure S4. Raman spectra of graphene films grown on Ni-Cu substrates at 1000C with different Ni layer thickness.

Figure S5. (a-d) SEM images of graphene grown on Ni-Cu substrate at different temperatures. Insets of (a-d): HRTEM images of folded edges graphene layer thickness.

Submitted to

Table S1. XPS depth profiles of the Ni-coated Cu foil held under CVD flow (Ar:H2:CH4 = 300:10:2 sccm) condition for 10 min at 650C. Depth (nm) 0.0 0.6 1.8 3.0 4.2 5.4 6.6 8.4 10.0 C (%) 85.51 68.05 45.67 34.69 23.23 15.88 11.26 8.45 7.37 O (%) 9.88 4.53 3.25 2.04 1.54 1.03 0.72 0.42 0.39 Cu (%) 1.07 15.38 30.4 52.08 58.88 69.53 75.93 79.52 80.13 Ni (%) 3.53 12.03 20.68 20.2 16.36 13.57 12.09 11.65 12.11 Ni/(Cu+Ni) (%) 76.74 43.89 40.48 27.95 21.74 16.33 13.73 12.77 13.12

Table S2. XPS depth profiles of the Ni-coated Cu foil held under CVD flow (Ar:H2:CH4 = 300:10:2 sccm) for 10 min at 1000C. Depth (nm) 0 0.6 1.8 3 4.2 5.4 6.6 8.4 10 C (%) 61.77 49.88 43.8 32.98 22.03 11.77 8.49 6.09 5.88 O (%) 9.14 7.87 5.33 1.92 0.71 0.81 0.59 0.47 0.35 Cu (%) 20.43 34.39 44.76 59.7 72.63 84.51 89.59 92.32 92.66 Ni (%) 8.66 7.86 6.11 5.4 4.63 2.91 1.33 1.12 1.11 Ni/(Cu+Ni) (%) 29.8 18.6 12.0 8.3 6.0 3.3 1.5 1.2 1.2