RDN150N20

Transistors

Switching (200V, 15A)
RDN150N20
!Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. !External dimensions (Unit : mm)
TO-220FN
10.0 +0.3 −0.1 3.2±0.2 4.5 +0.3 −0.1

2.8 −0.1

+0.2

15.0 +0.4 −0.2

12.0±0.2

!Application Switching

5.0±0.2 8.0±0.2

1.2

1.3

14.0±0.5

0.8

!Structure Silicon N-channel MOS FET

(1) Gate (2) Drain (3) Source

2.54±0.5

2.54±0.5 0.75 −0.05

+0.1

2.6±0.5

(1) (2) (3)

!Absolute maximum ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IDR IDRP ∗1 IAS ∗2 EAS ∗2 PD Tch Tstg Limits 200 ±30 15 45 15 45 15 210 40 150 −55 to +150 Unit V V A A A A A mJ W °C °C

!Equivalent circuit
Drain

Gate

Avalanche Current Avalanche Energy Total Power Dissipation (TC=25°C) Channel Temperature Storage Temperature

∗Gate Protection Diode

Source

∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C

∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.

1/3

±10  25 4. VGS=10V VDS=10V. VGS=0V VDS=10V. Gate-Source Voltage 2/3 .6 1224 443 154 17 37 62 31 158 0. ID=1mA ID=7.16            Unit µA V µA V Ω S pF pF pF ns ns ns ns ns µC nC Conditions VGS=±30V.4 1.8 0 −50 −25 0 25 50 75 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VDS=10V ID=1mA 1 VGS=10V Pulsed 0.1 7. Drain Current Fig.01 0.6 Static Drain-Source On-State Resistance vs.1 0.2 Typical Output Characteristics Fig.5 Ta=25°C Pulsed 0.5A VDS=10V VGS=0V f=1MHz ID=7.4 5. VGS=0V di / dt=100A / µs VDD=100V. VGS=0V VDS=200V.4 Gate Threshold Voltage vs.3 0.1 0.  200  2.VGS=10V.12 6. VDS=0V ID=250µA.01 0. VDD 100V VGS=10V RL=13Ω RGS=10Ω IDR=15A. Channel Temperature Fig.5A.0           Typ.5A.ID=15A !Electrical characteristic curves 100 TC=25°C Single Pulse 20 10V 7V 6V 18 8V Ta=25°C Pulsed 100 VDS=10V Pulsed DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 16 14 12 10 8 6 4 2 VGS=4V 5V 10 0µ s 10 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1m 10 Operation in this area is limited D C by Ros(on) O pe 1 Pw ra S =1 0m S tio n 1 0.79 32 Max.RDN150N20 Transistors !Electrical characteristics (Ta=25°C) Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Reverse Recovery Time Reverse Recovery Charge Total Gate Charge Symbol IGSS V(BR) DSS IDSS VGS (th) RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf trr Qrr Qg Min.1 Maximun Safe Operating Area Fig.     0.5 Static Drain-Source On-State Resistance vs.2 ID=15A Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 0.4 0.1 1 10 100 1000 0 0.6 0.01 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) Fig.0 0.2 2.6 4.8 4 3.5A 100 125 150 0.0  4.3 Typical Transfer Characteristics GATE THRESHOLD VOLTAGE : VGS (th) (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 6. ID=7.1 1 10 100 0 0 5 10 15 20 25 30 CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.

9 Reverse Drain Current vs.35 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 0. Drain Current Fig.01 0 0.1 0.5 0.2 0.8 0.13°C / W PW T D= PW T 0.1 0.4 1.01 Single pulse tr td (on) 10 0.05 0 −50 −25 ID=15A 7.8 Forward Transfer Admittance vs. Pulse Width 3/3 .13 Switching Characteristcs Fig.7 0.3 0.1 0.12 Reverse Recovery Time vs.5 Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 0.3 1.2 td (off) 100 0.1 0.1 0.05 0.6 0.3 0.15 0.5 CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.2 0.9 1 1. Drain-Source Voltage Fig.001 10µ 100µ 1m 10m 100m 1 10 DRAIN CURRENT : ID (A) PULSE WIDTH : PW (S) Fig.1 1 10 100 0.11 Dynamic Input Characteristics Fig.2 1.5 0.1 1 10 100 1000 10 15 0 20 10 0.1 0.4 0.2 0. Reverse Drain Current 1000 SWITCHING TIME : t (ns) tr NORMALIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta=25°C VDD=100V VGS=10V RQ=10Ω Pulsed 10 1 D=1 0.10 Typical Capacitance vs.RDN150N20 Transistors 0. Source-Drain Voltage 10000 180 160 140 120 100 80 60 40 20 0 0 5 VDD=40V VDD=100V VDD=160V VDD=40V VDD=100V VDD=160V VDS Ciss(pF) 1000 VGS 10 REVERSE RECOVERY TIME : trr (ns) DRAIN-SOURCE VOLTAGE : IDS (V) GATE-SOURCE VOLTAGE : VGS (V) CAPACITANCE : C (pF) f=1MHz VGS=0V Ta=25°C Pulsed 200 Ta=25°C ID=15A Pulsed 20 1000 Ta=25°C di / dt=100A / µs VGS=0V Pulsed 100 Coss(pF) 100 Ciss(pF) 10 0.14 Normalized Transient Thermal Resistance vs.25 0.1 1.2 0 25 50 75 100 125 150 0.5A 20 FORWARD TRANSFER ADMITTANCE :Yfs(S) 10 5 Ta= −25°C Ta=25°C Ta=75°C Ta=125°C REVERSE DRAIN CURRENT : IDR (A) VGS=10V Pulsed 50 VDS=10V Pulsed 100 VGS=0V Pulsed 10 1 1 0.1 1 10 100 DRAIN SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) REVERSE DRAIN CURRENT : IDR (A) Fig.7 Static Drain-Source On-State Resistance vs.5 1 2 5 10 20 50 0.1 0.05 0.01 0.02 Tc=25°C θth(ch-c)(t)=r(t) • =θth(ch-c) θth(ch-c)=3. Channel Temperature Fig.

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