TO -22 0A B

BYV410-600
Dual enhanced ultrafast power diode
Rev. 2 — 5 August 2011 Product data sheet

1. Product profile
1.1 General description
Dual enhanced ultrafast power diode in a SOT78 (TO-220AB) plastic package.

1.2 Features and benefits
 High thermal cycling performance  Low on state losses  Low thermal resistance  Soft recovery characteristic minimizes power consuming oscillations

1.3 Applications
 Dual mode (DCM and CCM) PFC  Power Factor Correction (PFC) for Interleaved Topology

1.4 Quick reference data
Table 1. Symbol VRRM IO(AV) Quick reference data Parameter repetitive peak reverse voltage average output current square-wave pulse; δ = 0.5 ; Tmb ≤ 92 °C; both diodes conducting; see Figure 1; see Figure 2 forward voltage IF = 10 A; Tj = 150 °C IF = 10 A; Tj = 25 °C; see Figure 4 Dynamic characteristics trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 5 IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs 20 35 ns Conditions Min Typ Max 600 20 Unit V A

Static characteristics VF 1.3 1.4 1.9 2.1 V V

Qr

recovered charge

-

15

28

nC

3-lead TO-220AB Version SOT78 Type number BYV410-600 All information provided in this document is subject to legal disclaimers. heatsink mounted. Pinning information Table 2. 2011. Ordering information Package Name BYV410-600 TO-220AB Description plastic single-ended package. Product data sheet Rev.NXP Semiconductors BYV410-600 Dual enhanced ultrafast power diode 2.V. All rights reserved. 2 — 5 August 2011 2 of 11 . cathode mb A1 K sym125 Simplified outline Graphic symbol A2 1 2 3 SOT78 (TO-220AB) 3. © NXP B. Pin 1 2 3 mb Pinning information Symbol Description A1 K A2 K anode 1 cathode anode 2 mounting base. Ordering information Table 3. 1 mounting hole.

Tmb ≤ 108 °C. δ = 0. Tj(init) = 25 °C. Symbol VRRM VRWM VR IO(AV) Limiting values Parameter repetitive peak reverse voltage crest working reverse voltage reverse voltage average output current DC square-wave pulse.5 . Limiting values Table 4. tp = 25 µs. © NXP B.5 003aad262 24 Ptot (W) 003aad263 δ=1 a = 180° 18 90 60 30 12 120 6 6 0 0 5 10 IF(AV) (A) 15 0 0 5 IF(AV) (A) 10 Fig 1.3 ms. both diodes conducting. per diode tp = 10 ms. Forward power dissipation as a function of average forward current. see Figure 2 δ = 0.1 12 0. maximum values Fig 2. Tj(init) = 25 °C.5 . sine-wave pulse. Forward power dissipation as a function of average forward current. sinusoidal waveform. IFRM IFSM repetitive peak forward current non-repetitive peak forward current -40 - 20 132 120 150 150 A A A °C °C 24 Ptot (W) 18 0.2 0. Tmb ≤ 92 °C.V. sine-wave pulse. per diode tp = 8. maximum values BYV410-600 All information provided in this document is subject to legal disclaimers. square waveform.NXP Semiconductors BYV410-600 Dual enhanced ultrafast power diode 4. per diode Tstg Tj storage temperature junction temperature Conditions Min Max 600 600 600 20 Unit V V V A In accordance with the Absolute Maximum Rating System (IEC 60134). Product data sheet Rev. 2011. 2 — 5 August 2011 3 of 11 . All rights reserved. see Figure 1.

V. Thermal characteristics Table 5. see Figure 3 with heatsink compound.6 Unit K/W K/W K/W 10 Zth(j-mb) (K/W) 1 001aag912 10−1 P δ= tp T 10−2 tp T t 10−3 10−6 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 3. Product data sheet Rev. 2011. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions with heatsink compound.NXP Semiconductors BYV410-600 Dual enhanced ultrafast power diode 5. both diodes conducting Rth(j-a) thermal resistance from junction to ambient Min Typ 60 Max 2. 2 — 5 August 2011 4 of 11 . All rights reserved. per diode.4 1. Transient thermal impedance from junction to mounting base per diode as a function of pulse width BYV410-600 All information provided in this document is subject to legal disclaimers. © NXP B.

All rights reserved. dIF/dt = 100 A/µs. Forward current as a function of forward voltage Fig 5. © NXP B. see Figure 5 IF = 1 A. Tj = 150 °C IF = 10 A. Characteristics Table 6. dIF/dt = 100 A/µs.5 Unit V V µA mA Static characteristics 12 IF (A) 003aad261 IF dlF dt trr 8 time (1) (2) (3) 25 % Qr 100 % 4 IR 0 0 1 2 VF (V) 3 IRM 003aac562 Fig 4.9 nC ns A V Min Typ 1. Tj = 25 °C. Product data sheet Rev.4 13 1 Max 1. VR = 30 V.3 1. VR = 30 V.1 50 1.9 2.NXP Semiconductors BYV410-600 Dual enhanced ultrafast power diode 6. Symbol VF IR Characteristics Parameter forward voltage reverse current Conditions IF = 10 A. ramp recovery BYV410-600 All information provided in this document is subject to legal disclaimers. see Figure 6 15 20 1. Tj = 25 °C. see Figure 4 VR = 600 V VR = 600 V. dIF/dt = 100 A/µs IF = 1 A. VR = 30 V.V. see Figure 5 IF = 1 A. 2011.2 28 35 1.4 3. Tj = 100 °C Dynamic characteristics Qr trr IRM VFR recovered charge reverse recovery time peak reverse recovery current forward recovery voltage IF = 1 A. 2 — 5 August 2011 5 of 11 . dIF/dt = 100 A/µs. Reverse recovery definitions.

2 — 5 August 2011 6 of 11 .NXP Semiconductors BYV410-600 Dual enhanced ultrafast power diode IF time VF VFRM VF time 001aab912 Fig 6. Product data sheet Rev. © NXP B. All rights reserved. 2011.V. Forward recovery definitions BYV410-600 All information provided in this document is subject to legal disclaimers.

7 e 2. All rights reserved. 1 mounting hole.4 D 16. heatsink mounted.2 Notes 1.0 2. 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e e c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4. Package outline SOT78 (TO-220AB) BYV410-600 All information provided in this document is subject to legal disclaimers.5 q 3.6 2.0 b2(2) 1. 2.8 3.NXP Semiconductors BYV410-600 Dual enhanced ultrafast power diode 7.9 0. Package outline Plastic single-ended package.54 L 15.79 L2(1) max.40 1.7 0.9 E 10.V. Dimension includes excess dambar.25 b 0.1 A1 1. 3.6 1.8 L1(1) 3.7 4. 2011. © NXP B. Product data sheet Rev.0 p 3.6 b1(2) 1. Lead shoulder designs may vary.3 9.3 1.2 D1 6. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 7.0 c 0.30 2.6 5. 2 — 5 August 2011 7 of 11 .0 15.0 12.7 Q 2.

V.2 Modifications: BYV410-600_1 • Various changes to content. Revision history Release date 20110805 Data sheet status Product data sheet Product data sheet Change notice Supersedes BYV410-600_1 Document ID BYV410-600 v. 2011.NXP Semiconductors BYV410-600 Dual enhanced ultrafast power diode 8. Revision history Table 7. 20090629 BYV410-600 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. All rights reserved. © NXP B. 2 — 5 August 2011 8 of 11 .

BYV410-600 All information provided in this document is subject to legal disclaimers. exhaustive or legally binding. death or severe property or environmental damage. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document.NXP Semiconductors BYV410-600 Dual enhanced ultrafast power diode 9. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. This document contains the product specification. Document status [1] [2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. which is available on request via the local NXP Semiconductors sales office. 2 — 5 August 2011 9 of 11 . breach of contract or any other legal theory. 2011. costs or problem which is based on any weakness or default in the customer’s applications or products. and as such is not complete. authorized or warranted to be suitable for use in life support. This document supersedes and replaces all information supplied prior to the publication hereof. Product data sheet Rev. Draft — The document is a draft version only.without limitation . In case of any inconsistency or conflict with the short data sheet. 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The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The term 'short data sheet' is explained in section "Definitions". Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. and NXP Semiconductors accepts no liability for any assistance with applications or customer product design.2 Definitions Preview — The document is a preview version only. as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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. . . . . . .2 Limiting values. . .1 Quick reference data . . . .9 Trademarks. . . . .NXP Semiconductors BYV410-600 Dual enhanced ultrafast power diode 11. .1 Applications . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . please send an email to: salesaddresses@nxp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . Contents 1 1. . . . . .9 Definitions . . . .3 1. . . . . . . . . . . .nxp. . . . .com Date of release: 5 August 2011 Document identifier: BYV410-600 . . . . . . .1 Features and benefits . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . All rights reserved. . . . . please visit: http://www. . . . . . . . . . . . .7 Revision history . . . . .9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . © NXP B. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2011. .2 1. . . . . . . . . .V. . . . . . . . . . . .1 General description . . . . . . . . . . .1 9. . .9 Data sheet status . . . . . . . . .2 9. . . For more information. . . . . . .1 1. . . . . . . . . . . . . . . . . . . . . . . . . . have been included in section ‘Legal information’. . . .10 Contact information. . . . .4 2 3 4 5 6 7 8 9 9. .3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . .4 10 Product profile . .5 Package outline . . . . . . . . . . .com For sales office addresses. . . .10 Please be aware that important notices concerning this document and the product(s) described herein. .8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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