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N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh™Power MOSFET
n n n n n n n
RDS(on) < 0.05Ω
ID 70 A
TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY’S LOWEST ON-RESISTANCE
DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Gate source ESD(HBM-C=100pF, R=15KΩ) Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 70 44 280 600 6 5 15 –65 to 150 150
(1)ISD ≤60A, di/dt ≤400A/µs, V DD ≤ V(BR)DSS, Tj ≤ T JMAX
Unit V V V A A A W KV W/°C V/ns °C °C 1/8
(•)Pulse width limited by safe operating area
Unit V µA µA µA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS. Pulsed: Pulse duration = 300 µs. 500 10 100 ± 10 Typ. VGS = 0 Min. ID = 30A VDS = 25V. 35 7500 980 200 1. duty cycle 1. ID = IAR. ID = 30A Min. 3 Typ. Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C. Max. Typ. f = 1 MHz. VDD = 35 V) Max Value 30 1. Unit S pF pF pF Ω Note: 1. 2/8 . ID = 250µA VGS = 10V.5 %.045 Max.2 30 300 °C/W °C/W °C Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current. TC = 125 °C VGS = ± 20V Min. VGS = 0 VDS = Max Rating VDS = Max Rating.STE70NM50 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.4 Unit A J ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA.5 Max. 4 0.05 Unit V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDS > ID(on) x RDS(on)max. 5 0.
5 Unit A A V ns µC A ns µC A Note: 1.STE70NM50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 250V. VGS = 0 ISD = 60A. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr Irrm trr Qrr Irrm Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60A. Tj = 150°C (see test circuit. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability. di/dt = 100A/µs. di/dt = 100A/µs. Figure 5) ISD = 60A. Typ. Max. Figure 3) VDD = 400V. ID = 60A.5 %.4 42 Test Conditions Min. Typ. 60 240 1. 51 46 108 Max. VGS = 10V Min. Max. VDD = 100 V. These integrated Zener diodes thus avoid the usage of external components. 3/8 . Tj = 25°C (see test circuit. Figure 5) 532 9. ID = 60A. 30 Typ.7Ω VGS = 10V (see test circuit. RG = 4. Pulsed: Pulse duration = 300 µs. 2. In this respect the 25V Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400V. Typ. duty cycle 1. Pulse width limited by safe operating area. ID = 30A RG = 4. Figure 5) Min. VDD = 100 V.9 37 636 13. but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source.7Ω. 51 58 190 53 97 266 Max. GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. VGS = 10V (see test circuit.
STE70NM50 Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/8 .
Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 .STE70NM50 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp.
4: Gate Charge test Circuit Fig.STE70NM50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 . 3: Switching Times Test Circuit For Resistive Load Fig. 2: Unclamped Inductive Waveform Fig.
503 inch TYP. MAX.496 0.307 0. 0.185 1.488 0.STE70NM50 ISOTOP MECHANICAL DATA DIM.9 30.3 15.05 0.157 0. 0.586 1.8 8.594 1.193 1.503 1. A B C D E F G H J K L M N O 11.003 1. MIN.1 37.157 0.2 4.169 0.15 31.5 4 4.95 0.5 31.8 8.240 0.029 0.033 0. 12.076 0.1 2.322 0.080 0.3 38.6 25.7 MIN.85 12.2 mm TYP.350 0.9 1.75 12.2 9.358 0.480 0.161 0.466 0. MAX.1 30.990 1.8 25.248 G O B A N D E J K L M H C F 7/8 .1 14.8 4 7.
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