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2SD2012

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SD2012
Audio Frequency Power Amplifier Applications
Unit: mm • •

Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation: PC = 25 W (Tc = 25°C)

Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 60 7 3 0.5 2.0 25 150 −55 to 150 Unit V V V A A W °C °C

JEDEC JEITA

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TOSHIBA 2-10R1A Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2009-12-01

IE = 0. IC = 0. ― ― ― ― ― 0.5 A VCB = 10 V. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.4 0. (or abbreviation code) Lot No. IE = 0 VEB = 7 V. IC = 2 A IC = 2 A.0 ― ― V V MHz pF Unit μA μA V Marking D2012 Part No. IC = 0.5 A VCE = 5 V. f = 1 MHz Min ― ― 60 100 20 ― ― ― ― Typ. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.75 3 35 Max 100 100 ― 320 ― 1.2SD2012 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condition VCB = 60 V. 2 2009-12-01 .0 1. identifies the indication of product Labels. IB = 0 VCE = 5 V. IB = 0.5 A VCE = 5 V. IC = 0.2 A VCE = 5 V. Note 2 Note 2: A line under a Lot No. IC = 0 IC = 50 mA.

5 DC current gain hFE (A) 300 25 −25 Collector current IC 2.5 0.1 0.4 0.2 0.0 1000 500 Tc = 100°C hFE – IC Common emitter VCE = 5 V 2.0 IC – VBE Common emitter VCE = 5 V Collector-emitter saturation voltage VCE (sat) (V) 1 0.01 0.3 0.5 1 3 0 0 Collector current IC (A) Collector-emitter voltage VCE (V) VCE (sat) – IC 3. 3 5 10 30 50 10 5 (2) 0.01 0.5 Common emitter Tc = 25°C 1 2 3 4 5 6 7 10 0.1 0.6 0.0 1.3 0.05 0.0 0.4 Base-emitter voltage VBE (V) PC – Ta 30 (1) (1) Ta = Tc Infinite heat sink (2) No heat sink 10 Safe Operating Area IC max (pulsed)* 5 (W) 25 PC (A) 1 ms* IC max (continuous) DC operation Tc = 25°C 10 ms* 100 ms* 3 Collector power dissipation 15 Collector current IC 20 1 0.03 1.5 0.5 0.0 Tc = 100°C 25 −25 0.5 1 3 5 Collector current IC (A) 0 0 0.2SD2012 IC – VCE 3.05 0.5 0.03 0.0 90 100 80 70 60 50 40 30 20 IB = 10 mA 1.03 0.2 1.5 (A) −25 25 Collector current IC Tc = 100°C 2.0 100 50 30 1.1 0.1 1 25 50 75 100 125 150 175 VCEO max 100 300 0 0 Collector-emitter voltage Ambient temperature Ta (°C) VCE (V) 3 2009-12-01 .3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature.01 0.3 Common emitter IC/IB = 10 2.05 0.5 1.8 1.

5 0.1 1 10 100 Pulse width tw (s) 4 2009-12-01 .3 0. Single nonrepetitive pulse (1) No heat sink Ta = 25°C (2) infinite heat sink Tc = 25°C 10 5 3 (2) (1) Transient thermal resistance rth (°C/W) 30 1 0.01 0.001 0.2SD2012 rth – tw 100 Curves apply only to limited areas of thermal 50 resistance.

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