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TSOP341..

Vishay Semiconductors

IR Receiver Modules for Remote Control Systems

Description
The TSOP341.. - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the operation with short burst transmission codes and high data rates at a supply voltage of 3 V.

1 2 3
16672

Features
Photo detector and preamplifier in one package Internal filter for PCM frequency e3 Improved shielding against electrical field disturbance TTL and CMOS compatibility Output active low Supply voltage range: 2.7 V to 5.5 V High immunity against ambient light Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Mechanical Data
Pinning: 1 = OUT, 2 = GND, 3 = VS

Parts Table
Part TSOP34130 TSOP34133 TSOP34136 TSOP34137 TSOP34138 TSOP34140 TSOP34156 Carrier Frequency 30 kHz 33 kHz 36 kHz 36.7 kHz 38 kHz 40 kHz 56 kHz

Special Features
Enhanced data rate up to 4000 bit/s Operation with short short bursts possible ( 6 cycles/burst)

Block Diagram Application Circuit


16833

3 30 k Input PIN AGC Band Pass Demodulator


VS

17170

OUT

Circuit

Transmitter TSOPxxxx with TSALxxxx

R1 = 100 VS OUT GND VO C1 = 4.7 F +VS

C
GND

2 Control Circuit
GND

R1 + C1 recommended to suppress power supply disturbances.

Document Number 82189 Rev. 1.4, 19-Dec-05

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TSOP341..
Vishay Semiconductors Absolute Maximum Ratings
Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Supply Voltage Supply Current Output Voltage Output Current Junction Temperature Storage Temperature Range Operating Temperature Range Power Consumption Soldering Temperature (Tamb 85 C) t 10 s, 1 mm from case (Pin 3) (Pin 3) (Pin 1) (Pin 1) Test condition Symbol VS IS VO IO Tj Tstg Tamb Ptot Tsd Value - 0.3 to + 6.0 3 - 0.3 to (VS + 0.3) 10 100 - 25 to + 85 - 25 to + 85 30 260 Unit V mA V mA C C C mW C

Electrical and Optical Characteristics


Tamb = 25 C, unless otherwise specified Parameter Supply Current (Pin 3) Supply Voltage Ev = 0 Ev = 40 klx, sunlight Tamb = - 25 C to + 85 C Tamb = 0 C to + 60 C, Ev < 30 klx, sunlight Transmission Distance Ev = 0, test signal see fig.1, IR diode TSAL6200, IF = 250 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 3 Angle of half transmission distance Test condition Symbol ISD ISH VS VS d 2.7 2.4 35 Min 0.7 Typ. 1.2 1.3 5.5 5.5 Max 1.5 Unit mA mA V V m

Output Voltage Low (Pin 1) Minimum Irradiance (30 - 40 kHz)

VOSL Ee min 0.2

250 0.4

mV mW/m2

Minimum Irradiance (56 kHz)

Ee min

0.3

0.5

mW/m2

Minimum Irradiance (30 - 40 kHz)

Ee min

0.35

0.5

mW/m2

Minimum Irradiance (56 kHz)

Ee min

0.45

0.6

mW/m2

Maximum Irradiance Directivity

Ee max 1/2

30 45

W/m2 deg

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Document Number 82189 Rev. 1.4, 19-Dec-05

TSOP341..
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
Ee Optical Test Signal (IR diode TSAL6200, IF=0.4 A, N=6 pulses, f=f0, T=10 ms)
Ton ,Toff Output Pulse Width ( ms )

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.1 1.0 l = 950 nm, optical test signal, fig.3 Toff Ton

tpi *) T *) tpi w 6/fo is recommended for optimal function Output Signal VO VOH VOL td1 )
1) 2)

14337

3/f0 < td < 9/f0 tpi 4/f0 < tpo < tpi + 6/f0 t

10.0

100.0 1000.010000.0

tpo2 )

16910

Ee Irradiance ( mW/m2 )

Figure 1. Output Function

Figure 4. Output Pulse Diagram

0.35
t po Output Pulse Width ( ms )

1.2
E e min / E e Rel. Responsivity

0.30 Output Pulse 0.25 0.20 0.15 0.10 0.05 0.00 0.1 l = 950 nm, optical test signal, fig.1 Input Burst Duration

1.0 0.8 0.6 0.4 0.2 0.0 0.7 f = f0"5% Df ( 3dB ) = f0/7 0.9 1.1 1.3

1.0

10.0

100.0 1000.010000.0
16926

16907

Ee Irradiance ( mW/m2 )

f/f0 Relative Frequency

Figure 2. Pulse Length and Sensitivity in Dark Ambient

Figure 5. Frequency Dependence of Responsivity

Ee min Threshold Irradiance (mW/m2 )

Ee

Optical Test Signal 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.01 Ambient, = 950 nm
Correlation with ambient light sources: 10 W/m2 1.4 klx (Std.illum.A, T= 2855 K) 10 W/m2 8.2 klx (Daylight, T = 5900 K)

600 s T = 60 ms Output Signal, ( see Fig.4 )

600 s

94 8134

VO VOH VOL

Ton

Toff

t
16911

0.10

1.00

10.00

100.00

E Ambient DC Irradiance (W/m2)

Figure 3. Output Function

Figure 6. Sensitivity in Bright Ambient

Document Number 82189 Rev. 1.4, 19-Dec-05

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TSOP341..
Vishay Semiconductors

2.0
Ee min Threshold Irradiance (mW/m)
Ee min Threshold Irradiance (mW/m)

0.6

1.5

f = fo f = 10 kHz

0.5 0.4 0.3 0.2 0.1

Sensitivity in dark ambient

1.0

f = 1 kHz

0.5 f = 100 Hz 0.0 0.1 1.0 10.0 100.0 1000.0

0.0 30 15 0

15

30

45

60

75

90

16912

VsRMS AC Voltage on DC Supply Voltage (mV)

16918

Tamb Ambient Temperature (C)

Figure 7. Sensitivity vs. Supply Voltage Disturbances

Figure 10. Sensitivity vs. Ambient Temperature

E e min Threshold Irradiance (mW/m)

2.0 f(E) = f0 1.6 1.2 0.8 0.4 0.0 0.0 0.4 0.8 1.2 1.6 2.0 E Field Strength of Disturbance (kV/m)

S ( ) rel - Relative Spectral Sensitivity

1.2 1.0 0.8 0.6 0.4 0.2 0.0 750

850

950

1050

1150

94 8147

16919

- Wavelength ( nm )

Figure 8. Sensitivity vs. Electric Field Disturbances

Figure 11. Relative Spectral Sensitivity vs. Wavelength

1.0 0.9
Max. Envelope Duty Cycle

10

20 30

0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120
96 12223p2

40 1.0 0.9 0.8 f = 38 kHz, Ee = 2 mW/m2 0.7 50 60 70 80 0.6 0.6 0.4 0.2 0 0.2 0.4 drel Relative Transmission Distance

16914

Burst Length ( number of cycles / burst )

Figure 9. Max. Envelope Duty Cycle vs. Burstlength

Figure 12. Directivity

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Document Number 82189 Rev. 1.4, 19-Dec-05

TSOP341..
Vishay Semiconductors
Continuous signal at 38 kHz or at any other frequency Signals from fluorescent lamps with electronic ballast (an example of the signal modulation is in the figure below).

1.0
E e min Sensitivity ( mW/m 2 )

0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VS Supply Voltage ( V ) 0.2

17185

IR Signal

Figure 13. Sensitivity vs. Supply Voltage


0

IR Signal from fluorescent lamp with low modulation

Suitable Data Format


The circuit of the TSOP341.. is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fulfill the following conditions: Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). Burst length should be 6 cycles/burst or longer. After each burst which is between 6 cycles and 70 cycles a gap time of at least 10 cycles is necessary. For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the data stream. This gap time should have at least same length as the burst. Up to 2200 short bursts per second can be received continuously. Some examples for suitable data format are: NEC Code, Toshiba Micom Format, Sharp Code, RC5 Code, RC6 Code, RCMM Code, R-2000 Code, RECS-80 Code. When a disturbance signal is applied to the TSOP341.. it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occur. Some examples for such disturbance signals which are suppressed by the TSOP341.. are: DC light (e.g. from tungsten bulb or sunlight)

16920

10 Time (ms)

15

20

Figure 14. IR Signal from Fluorescent Lamp with low Modulation

Document Number 82189 Rev. 1.4, 19-Dec-05

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TSOP341..
Vishay Semiconductors Package Dimensions in mm

16003

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Document Number 82189 Rev. 1.4, 19-Dec-05

TSOP341..
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 82189 Rev. 1.4, 19-Dec-05

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Legal Disclaimer Notice


Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 Revision: 08-Apr-05

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