NTE123A (NPN) & NTE159M (PNP

)
Silicon Complementary Transistors
General Purpose
Description:
The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from
audio to VHF frequencies.
Features:
D Low Collector Saturation Voltage: 1V (Max)
D High Current Gain–Bandwidth Product: fT = 300MHz (Min) @ IC 20mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Base Voltage, VCBO
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.28mW/°C
Total Device Dissipation (TC = +25°C), PD
NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.85mW/°C
NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3mW/°C
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Note 1 100 – 300 IC = 500mA. Note 1 – – 0. IB = 50mA. IC = 0 NTE159M Collector Cutoff Current NTE123A ICEX NTE159M Collector Cutoff Current NTE123A ICBO NTE159M Emitter Cutoff Current (NTE123A Only) Base Cutoff Current NTE123A IEBO IBL NTE159M ON Characteristics DC Current Gain NTE123A hFE NTE159M Collector–Emitter Saturation Voltage NTE123A NTE159M VCE(sat) Note 1. Note 1 50 – – IC = 150mA. IE = 0 NTE159M Emitter–Base Breakdown Voltage NTE123A V(BR)EBO IE = 10µA. IC = 150mA. IE = 0. TA = –55°C 35 – – IC = 150mA. IC = 0 – – 10 nA VCE = 60V. . Note 1 100 – 300 VCE = 1V. TA = +150°C – – 10 µA VCB = 50V. Note 1 75 – – IC = 10mA.0 V IC = 150mA.Electrical Characteristics: (TA = 25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 40 – – V 60 – – V 75 – – V 60 – – V 6 – – V 5 – – V VCE = 60V. VEB(off) = 3V – – 10 nA VCE = 30V. Duty Cycle ≤ 2%. Pulse Test: Pulse Width ≤ 300µs. Note 1 – – 1. TA = +150°C – – 10 µA VEB = 3V. IE = 0.4 V IC = 500mA. VBE = 500mV – – 50 nA VCB = 60V. VEB(off) = 3V – – 20 nA VCE = 30V. Not e 1 40 – – IC = 0. IE = 0 – – 0.1mA 75 – – IC = 1mA 100 – – IC = 10mA 100 – – IC = 150mA. Note 1 – – 0.01 µA VCB = 50V. Note 1 – – 1. IE = 0 – – 0. VEB(off) = 500mV – – 50 nA VCE = 10V IC = 0. IB = 15mA. Note 1 50 – – VCE = 10V IC = 500mA. IB = 15mA.1mA. Note 1 35 – – IC = 1mA 50 – – IC = 10mA.6 V OFF Characteristics Collector–Emitter Breakdown Voltage NTE123A V(BR)CEO IC = 10mA.3 V IC = 500mA. IB = 0 NTE159M Collector–Base Breakdown Voltage NTE123A V(BR)CBO IC = 10µA. IB = 50mA.01 µA VCB = 60V.

f = 300MHz – – 60 Ω VCC = 30V.8MHz – – 150 ps ON Characteristics (Cont’d) Base–Emitter Saturation Voltage NTE123A VBE(sat) NTE159M Small–Signal Characteristics Current Gain–Bandwidth Product NTE123A fT NTE159M IC = 50mA Output Capacitance Cobo Input Capactiance NTE123A Cibo NTE159M Input Impedance (NTE123A Only) IC = 20mA hie IC = 1mA VCE = 20V. IB = 50mA – – 2. f = 1kHz IC = 10mA IC = 1mA VCE = 10V. f = 1kHz Collector–Base Time Constant (NTE123A Only) rb′Cc Noise Figure (NTE123A Only) NF IC = 100µA. Note 2 VCE = 10V. Pulse Test: Pulse Width ≤ 300µs.0 V IC = 150mA. Note 1 0.6 – 1. f = 1kHz IC = 10mA Voltage Feedback Ratio (NTE123A Only) hre Small–Signal Current Gain (NTE123A Only) hfe Output Admittance (NTE123A Only) hoe IC = 1mA VCE = 10V. VBE(off) = 500mV. f = 100kHz – – 25 pF VBE = 2V – – 30 pF 2.25 – 1. Note 1 – – 1. IB = 15mA.0 kΩ 0. f = 100MHz. VCE = 20V. f = 1kHz IC = 10mA IC = 1mA VCE = 10V. IC = 150mA. VCB = 20V. IB1 = IB2 = 15mA – – 225 ns – – 60 ns VCC = 30V.0 – 8. f = 100kHz – – 8 pF VBE = 0. IB = 15mA. IC = 150mA. f = 31. VCE = 10V.2 V IC = 500mA. Note 2.3 V IC = 500mA.25 kΩ – – 8 x 10–4 – – 4 x 10–4 50 – 300 75 – 375 5 – 35 µmhos IC = 10mA 25 – 200 µmhos IE = 20mA. IB1 = IB2 = 15mA Note 1. IB1 = 15mA – 26 45 ns – 6 10 ns – 20 40 ns – 70 100 ns – 50 80 ns – 20 30 ns Real Part of Common–Emitter High Frequency Input Impedance (NTE123A Only) Switching Characteristics NTE123A Delay Time td Rise Time tr Storage Time ts Fall Time tf NTE159M Turn–On Time ton Delay Time td Rise Time tr Turn–Off Time toff Storage Time ts Fall Time tf VCC = 6V.5V IC = 0. IC = 150mA. .Electrical Characteristics (Cont’d): (TA = 25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 150mA. IB = 50mA. f = 1kHz – – 4 dB Re(hie) IC = 20mA. Note 1 – – 2.6 V 300 – – MHz 200 – – MHz VCB = 10V. Duty Cycle ≤ 2%. IB1 =– 15mA – – 10 ns – – 25 ns VCC = 30V. IC = 150mA. RS = 1kΩ. fT is defined as the frequency at which |hfe| extrapolates to unity. IE = 0.

230 (5.018 (0.05) .95) Dia Max .500 (12.7) Min .030 (.45) Base Emitter Collector 45° .33) Max .041 (1.84) Dia Max .210 (5.195 (4.762) Max ..

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