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DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGGINEERING MODEL EXAM EC-2151 ELECTRIC CIRCUITS & ELECTRON DEVICES DATE: MARKS: 100 TIME : 3 Hrs ANSWER ALL THE QUESTIONS PART A (2*10=20) 1. A resistor 3.6 is connected in series with another of 4.56, what is the resistance must be placed across 3.6 so that total resistance is 6. 2. Define Duality? Draw the dual network for the circuit show below :

3. A coil of 20 resistance has an inductance of 0.2 H and is connected in parallel with a condenser of

4. 5. 100 F capacitance. Calculate the frequency at which the circuit will act as a non-inductive resistance of R ohms. What is the time constant of RL and RC series circuit. Why does reverse saturation current vary with temperature in diodes? In a P type semiconductor, the Fermi level is 0.3 above the valance band at a room temperature of 300K. Determine new position of the Fermi level for temperature of 400K. What is Early effect in CB configuration and give its consequences? In a common base connection, the emitter current is 1 mA, I CBO = 50 A, =0.92. Find the total collector current. How turn off of SCR is made and why SCR is not bidirectional. What is intrinsic standoff ratio? PART B (5*16=80)

6.

7.

8. 9. 10.

11. (a) Use Delta - star conversion to find resistance between terminals AB of the circuit shown : (08)

(ii) Determine current flowing through the 5 resistor in the circuit shown in using Norton theorem. (8)

OR (b)(i) A network having Thevenins equivalent of voltage g E in series with Rg supplies a load of R L through a transmission line of resistance RT . If E g = 100 volts, R g=20 and RL =10 , determine the value of RT, so that the power transferred to the load is maximum. (8) (ii)Consider the circuit shown in fig. (8)

(1) If Rout = 3 k, find the power delivered to it. (2) What is the maximum power that can be delivered to any Rout? (3) What two different values of Rout will have exactly 20mW delivered to them? 12. (a) (i) Derive the expression for single tuned amplifier. (8) (ii) A current source is applied to a parallel combination of R, L and C where R =10 , L = 1 H and C =1F. (a) Compute the resonant frequency. (b) Find the quality factor. (c) Calculate the value of the bandwidth. (d) Compute the lower and upper frequency points of the bandwidth. (8) OR (b) Discuss in detail the transient response of series RLC circuit with sinusoidal excitation. Derive the steady state current for the same. (10) 4 (ii) The tuned frequency of a double tuned circuit shown in Fig is 10 rad/sec. If the source voltage is 2 v and has a resistance of 0.1, calculate the maximum output voltage at resonance if R1=0.01, L1=2H R2 =0.1 and L2 =25H (6)

13. (a)(i) In a semiconductor at room temperature (300K) the intrinsic carrier concentration and resistivity are 1.5x1016 / cm and 2x10-m respectively. It is converted into an extrinsic semiconductor with a doping concentration of 1020 /m. For the extrinsic semiconductors calculate the (a) Minority carrier concentration (b) Resistivity (c) Shift in fermilevel due to doping. (d) Minority carrier concentration when its temperature is increased to a value at which the intrinsic carries concentration ni doubles. Assume the mobility of majority and minority carriers to be the same and KT = 26meV at room temperature. (8) (ii)Derive the PN diode current equation from the quantitative theory of diode currents. OR (b) (i) With a neat circuit diagram, explain the operation of zener voltage regulator. (ii) Define and derive the drift and diffusion currents. (iii) With neat diagram, explain the energy band diagram of PN junction diode. (8) (6) (4) (6)

14. (a)(i) Present the circuit and explain the structure, operation and characteristics of CE, CB and CC configurations. Compare their parameters and performances. (10) (ii) (ii) Define and compare , and . (6) OR (b) Draw the circuit and explain the operation and characteristics of Enhancement and Depletion mode MOSFETS. (16) 15. (a) Discuss the following : (i) CCD. (ii) Phototransistor. (iii) LED.

OR (b)(i) Draw the circuit, and the equivalent circuit of SCR. Explain its construction, working, characteristics, advantages and applications. (8) (ii) What is tunneling phenomenon? Describe the V-I characteristics and concepts of tunnel diode with application. (8)

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