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2N4402

2N4402

BE

TO-92

PNP General Purpose Amplifier


This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA.

Absolute Maximum Ratings*


Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25C unless otherwise noted

Parameter

Value
40 40 5.0 600 -55 to +150

Units
V V V mA C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max
2N4402 625 5.0 83.3 200

Units
mW mW/C C/W C/W

2001 Fairchild Semiconductor Corporation

2N4402, Rev A

2N4402

PNP General Purpose Amplifier


(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 A, IE = 0 I E = 100 A, I C = 0 VCE = 35 V, VEB = 0.4 V VCE = 35 V, VEB = 0.4 V 40 40 5.0 0.1 0.1 V V V A A

ON CHARACTERISTICS*
hFE DC Current Gain VCE = 1.0 V, IC = 1.0 mA VCE = 1.0 V, IC = 10 mA VCE = 2.0 V, IC = 150 mA VCE = 2.0 V, IC = 500 mA IC = 150 mA, I B = 15 mA IC = 500 mA, I B = 50 mA IC = 150 mA, I B = 15 mA IC = 500 mA, I B = 50 mA 30 50 50 20 150 0.40 0.75 0.95 1.30 V V V V

VCE( sat) VBE( sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

0.75

SMALL SIGNAL CHARACTERISTICS


Cob Cib hfe hfe hie hre hoe Output Capacitance Input Capacitance Small-Signal Current Gain Small-Signal Current Gain Input Impedance Voltage Feedback Ratio Output Admittance VCB = 10 V, f = 140 kHz VEB = 0.5 V, f = 140 kHz IC = 20 mA, VCE = 10 V, f = 100 MHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 1.5 30 0.75 0.10 1.0 250 7.5 8.0 100 k x10 mhos
-4

8.5 30

pF pF

SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30 V, IC =150 mA, I B1 = 15 mA, VBE ( off ) = 2.0 V VCC = 30 V, IC =150 mA, I B1 = IB2 = 15 mA 15 20 225 30 ns ns ns ns

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

2N4402

PNP General Purpose Amplifier


(continued)

Typical Characteristics

VCESAT - COLLECTOR EMITTE R VOLTAGE (V)

h FE - TYPICAL PULSED CURRENT GAIN

Typical Pulsed Current Gain vs Collector Current


500
VCE = 5V

Collector-Emitter Saturation Voltage vs Collector Current


0.5 = 10 0.4 0.3 0.2 0.1 0
125 C - 40 C

400 300 200 100 0 0.1

125 C

25 C

25 C

- 40 C

0.3

1 3 10 30 100 I C - COLLECTOR CURRENT (mA)

300

10 100 I C - COLLECTOR CURRE NT (mA)

500

V BE( ON)- BAS E EMITTER ON VOLTAGE (V)

V BESAT - BASE EMITTER VOLTAGE (V)

Base-Emitter Saturation Voltage vs Collector Current


1
- 40 C

Base Emitter ON Voltage vs Collector Current


1 0.8 0.6 0.4 0.2 0 0.1
- 40 C

0.8 0.6 0.4 0.2 0


25 C

25 C

125 C

= 10

125C

VCE = 5V

10 100 I C - COLLECTOR CURRENT (mA)

500

1 10 I C - COLLECTOR CURRE NT (mA)

25

Collector-Cutoff Current vs Ambient Temperature


I CBO - COLLE CTOR CURRENT (nA) 100 V CB = 35V 10

Input and Output Capacitance vs Reverse Bias Voltage


20 CAPACITANCE (pF) 16 12
C ib

8 4 0 0.1
C ob

0.1

0.01 25

50 75 100 T A - AMBIE NT TEMP ERATURE ( C)

125

1 10 REVERSE BIAS VOLTAGE (V)

50

2N4402

PNP General Purpose Amplifier


(continued)

Typical Characteristics

(continued)

Switching Times vs Collector Current


250 I B1 = I B2 = 200
V cc = 15 V Ic 10

Turn On and Turn Off Times vs Collector Current


500 I B1 = I B2 = 400
V cc = 15 V Ic 10

TIME (nS)

TIME (nS)

150 100
tr tf

ts

300 200
t off

50
td

100 0 10

t on

0 10

100 I C - COLLECTOR CURRENT (mA)

1000

100 I C - COLLECTOR CURRENT (mA)

1000

Rise Time vs Collector and Turn On Base Currents


I B1 - TURN 0N BASE CURRENT (mA) 50
PD - POWER DISSIPATION (W) 1

Power Dissipation vs Ambient Temperature

20 10 5
30 ns t r = 15 V

0.75

SOT-223 TO-92

0.5
SOT-23

0.25

2
60 ns

1 10

100 I C - COLLECTOR CURRENT (mA)

500

25

50 75 100 TEMPERATURE ( oC)

125

150

2N4402

PNP General Purpose Amplifier


(continued)

Typical Common Emitter Characteristics

(f = 1.0kHz)

CHAR. RELATIVE TO VALUES AT I C= -10mA

CHAR. RELATIVE TO VALUES AT VCE = -10V

Common Emitter Characteristics


5 hoe 2 1 0.5 h ie h re h fe

Common Emitter Characteristics


1.3 h re h ie h fe hoe

1.2

h re and hoe

1.1

1 h ie 0.9 h fe 0.8 -4 I C = -10mA T A = 25oC -20

0.2 0.1 _

V CE = -10 V T A = 25 oC 1
_ _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _

50

-8 -12 -16 V CE - COLLECTOR VOLTAGE (V)

CHAR. RELATIVE TO VALUES AT TA = 25oC

Common Emitter Characteristics


1.5 I C = -10mA 1.4 V = -10 V CE 1.3 1.2 1.1 hoe 1 0.9 0.8 0.7 0.6 0.5 -40 h fe -20 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 h re h ie h fe h ie h re hoe

2N4402

PNP General Purpose Amplifier


(continued)

Test Circuits
- 30 V

200

1.0 K 0 - 16 V 200ns 50

FIGURE 1: Saturated Turn-On Switching Time Test Circuit

1.5 V

- 6.0 V

1 K NOTE: BVEBO = 5.0 V

37

1.0 K 0 - 30 V 200ns 50

FIGURE 2: Saturated Turn-Off Switching Time Test Circuit

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First Production

No Identification Needed

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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. G